ECH8309-TL-H [ONSEMI]
P-Channel Power MOSFET -12V, -9.5A, 16mΩ;
| 型号： | ECH8309-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | P-Channel Power MOSFET -12V, -9.5A, 16mΩ PC |
| 文件： | 总7页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1418B
ECH8309
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
12V, 9.5A, 16m , Single ECH8
Features
•
1.8V drive
•
•
Halogen free compliance
Protection diode in
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--12
Unit
V
V
DSS
V
±10
V
GSS
I
--9.5
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm)
--40
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
1.5
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ECH8
7011A-002
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
Top View
2.9
ECH8309-TL-H
Packing Type : TL
Marking
0.15
8
5
J L
0 to 0.02
Lot No.
TL
4
1
Electrical Connection
0.65
0.3
8
7
6
5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
1
2
3
4
ECH8
Bottom View
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/22509PE MSIM TC-00001633 No. A1418-1/7
ECH8309
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--12
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =--1mA, V =0V
D GS
(BR)DSS
I
V
=--12V, V =0V
--10
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
μ
GSS
GS DS
V
(off)
|
V
=--6V, I =--1mA
--0.4
9.6
--1.3
V
GS
yfs
DS D
Forward Transfer Admittance
V
DS
=--6V, I =--4.5A
D
16
S
|
R
R
R
(on)1
(on)2
(on)3
I
=--4.5A, V =--4.5V
GS
12
18
16
26
53
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--2A, V =--2.5V
GS
m
m
I
D
=--1A, V =--1.8V
GS
30
Input Capacitance
Ciss
1780
540
390
22
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--6V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
d
r
110
157
123
18
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=--6V, V =--4.5V, I =--9.5A
GS
2.8
D
4.9
V
SD
I =--9.5A, V =0V
S GS
--0.8
--1.2
Switching Time Test Circuit
V = --6V
DD
V
IN
0V
--4.5V
I
= --4.5A
D
V
IN
R =1.3Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ECH8309
P. G
50Ω
S
Ordering Information
Device
Package
ECH8
Shipping
3,000pcs./reel
memo
ECH8309-TL-H
Pb Free and Halogen Free
No. A1418-2/7
ECH8309
I
D
-- V
DS
I
-- V
D GS
--7
--6
--5
--4
--3
--2
--10
--9
--8
--7
--6
--5
--4
--3
--2
V
= --6V
DS
--1
0
--1
0
V
=
--1.2V
GS
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
IT13986
Drain-to-Source Voltage, V
DS
-- V
IT13985
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
50
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
Ta=25°C
I = --1.0A
D
--2.0A
--4.5A
5
0
5
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
IT14419
IT14418
| yfs | -- I
I
-- V
D
S SD
2
--10
7
5
5
V
=0V
3 V = --6V
GS
DS
2
10
3
2
7
5
--1.0
3
2
7
5
3
2
1.0
7
5
--0.1
7
5
3
2
3
2
0.1
7
--0.01
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT13990
--0.1
--1.0
--10
IT13989
Drain Current, I -- A
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
5
2
V
V
= --6V
= --4.5V
f=1MHz
DD
GS
3
2
1000
7
5
3
2
1000
7
5
t
100
f
7
5
3
2
3
2
t (on)
d
100
10
--0.01
0
--2
--4
--6
--8
--10
--12
IT13992
2
3
5
7
2
3
5
7
2
3
5
7
2
--0.1
--1.0
--10
Drain Current, I -- A
Drain-to-Source Voltage, V -- V
DS
IT13991
D
No. A1418-3/7
ECH8309
A S O
V
-- Qg
GS
--100
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
7
5
V
I
= --6V
= --9.5A
DS
D
I
= --40A
PW≤10μs
DP
3
2
I = --9.5A
D
--10
7
5
3
2
--1.0
7
5
Operation in this area
is limited by R (on).
3
2
DS
--0.1
7
5
Ta=25°C
Single pulse
3
2
--0.5
0
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01
0
2
4
6
8
10
12
14
16
18
2
3
5
7
2
3
5
7
2
3
5
7
2
3
--0.1
--1.0
--10
-- V
IT14421
Total Gate Charge, Qg -- nC
IT14420
Drain-to-Source Voltage, V
DS
P
-- Ta
D
1.8
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT14422
No. A1418-4/7
ECH8309
Embossed Taping Specification
ECH8309-TL-H
No. A1418-5/7
ECH8309
Outline Drawing
Land Pattern Example
ECH8309-TL-H
Mass (g) Unit
Unit: mm
0.02
mm
* For reference
0.4
0.65
No. A1418-6/7
ECH8309
Note on usage : Since the ECH8309 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A1418-7/7
相关型号：
©2020 ICPDF网 联系我们和版权申明