EFC2J022NUZTCG [ONSEMI]
用于单节锂离子电池保护的功率 MOSFET，12 V，3.55 mΩ，18 A，双 N 沟道;
| 型号： | EFC2J022NUZTCG |
| 厂家： | 
ONSEMI |
| 描述： | 用于单节锂离子电池保护的功率 MOSFET，12 V，3.55 mΩ，18 A，双 N 沟道 电池 |
| 文件： | 总8页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power, Dual,
N-Channel, for 1-Cell
Lithium-ion Battery
Protection
V
R
Max
I Max
SSS
SS(on)
S
3.55 mW @ 4.5 V
3.75 mW @ 3.8 V
12 V
18 A
4.8 mW @ 3.1 V
6.9 mW @ 2.5 V
12 V, 3.55 mW, 18 A
ELECTRICAL CONNECTION
N-Channel
EFC2J022NUZ
6, 7 , 9, 10
This Power MOSFET features a low on−state resistance. This
device is suitable for applications such as power switches of portable
machines. Best suited for 1−cell lithium−ion battery applications.
1: Source1
2: Source1
3: Gate1
4: Source1
5: Source1
6: Source2
7: Source2
8: Gate2
Rg
Rg
8
3
Features
• 2.5 V Drive
• Common-Drain Type
• ESD Diode-Protected Gate
• Pb−Free, Halide Free and RoHS Compliant
9: Source2
10: Source2
Rg = 300 W
1, 2, 4, 5
Applications
• 1-Cell Lithium-ion Battery Charging and Discharging Switch
MARKING
Specifications
DIAGRAM
NJ
A/YW
ZZ
ABSOLUTE MAXIMUM RATINGS (T = 25°C)
A
Parameter
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Symbol
Value
12
Unit
V
V
SSS
GSS
WLCSP10
1.84x1.96x0.10
CASE 567PH
NJ = Specific Device Code
V
8
V
A
= Assembly Site
YW = Assembly Start Week
ZZ = Assembly Lot Number
I
S
18
A
Source Current (Pulse)
PW ≤ 100 ms, duty cycle ≤ 1%
I
SP
76
A
PIN CONNECTIONS
Total Dissipation (Note 1)
Junction Temperature
Storage Temperature
P
1.8
150
W
°C
°C
T
1: Source1
2: Source1
3: Gate1
T
1
4
6
9
j
T
stg
−55 to +150
4: Source1
5: Source1
6: Source2
7: Source2
8: Gate2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
8
THERMAL RESISTANCE RATINGS
9: Source2
10: Source2
2
5
10
7
Parameter
Symbol
Value
Unit
Junction to Ambient (Note 1)
R
69
°C/W
θ
JA
2
ORDERING INFORMATION
1. Surface mounted on ceramic substrate (5000 mm × 0.8 mm).
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
October, 2022 − Rev. 1
EFC2J022NUZ/D
EFC2J022NUZ
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Parameter
Symbol
Conditions
Min
12
−
Typ
−
Max
−
Unit
V
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
V
I = 1 mA, V = 0 V (Figure 1)
S GS
(BR)SSS
I
V
= 10 V, V = 0 V (Figure 1)
−
1
mA
mA
V
SSS
SS
GS
SS
GS
I
V
V
=
8 V, V = 0 V (Figure 2)
−
−
10
1.3
3.55
3.75
4.8
6.9
−
GSS
SS
V
R
(th)
= 6 V, I = 1 mA (Figure 3)
0.3
1.9
2.0
2.25
2.5
−
−
GS
S
Static Source to Source On-State
Resistance
(on)
I = 5 A, V = 4.5 V (Figure 4)
2.75
2.9
3.1
3.5
10
26
195
111
46
mW
mW
mW
mW
ms
SS
S
GS
I = 5 A, V = 3.8 V (Figure 4)
S
GS
I = 5 A, V = 3.1 V (Figure 4)
S
GS
I = 5 A, V = 2.5 V (Figure 4)
S
GS
Turn-ON Delay Time
Rise Time
t (on)
d
V
= 6 V, V = 4.5 V,
SS GS
I
S
= 3 A, R = 10 kW
g
t
r
−
−
ms
(Figure 5)
Turn-OFF Delay Time
Fall Time
t (off)
d
−
−
ms
t
f
−
−
ms
Total Gate Charge
Qg
V
SS
= 6 V, V = 4.5 V, I = 18 A
−
−
nC
GS
S
(Figure 6)
Forward Source to Source Voltage
V
F(S-S)
I = 3 A, V = 0 V
(Figure 7)
−
0.75
1.2
V
S
GS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
EFC2J022NUZ
Test Circuits are Example of Measuring FET1 Side
/ I
V
I
(BR)SSS SSS
GSS
S2
S2
S1
G2
G1
G2
A
G1
A
V
SS
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
V
GS
S1
Figure 1. Test Circuit 1
Figure 2. Test Circuit 2
V
GS
(th)
R
(on)
SS
IS
S2
S1
S2
S1
G2
G1
G2
G1
A
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
V
V
SS
V
GS
V
GS
Figure 3. Test Circuit 3
t (on), t , t (off), t
Figure 4. Test Circuit 4
Qg
S2
G2
d
r
d
f
S2
RL
A
G2
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
V
I
G
= 1 mA
G1
RL
G1
Rg
V
SS
S1
S1
V
SS
PG
When FET1 is measured,
Gate and Source of FET2
are short−circuited.
DC
Figure 5. Test Circuit 5
Figure 6. Test Circuit 6
V
F(S−S)
S2
I
S
G2
G1
VGS = 0 V
V
When FET1 is measured,
S1
+4.5 V is added to V
of FET2.
GS
Figure 7. Test Circuit 7
NOTE: When FET2 is measured, the position of FET1 and FET2 is switched.
www.onsemi.com
3
EFC2J022NUZ
6.0
5.5
5.0
4.5
4.0
3.5
3.0
15
14
13
12
11
10
9
8
7
6
5
4
3
2
V
= 6 V
4.5 V
T = 25°C
SS
A
Single pulse
Single pulse
3.8 V
3.1 V
= 2.5 V
V
GS
2.5
2.0
1.5
1.0
T = 75°C
A
25°C
−25°C
0.5
0
1
0
0
0.005
0.01
0.015
0.02
0.025
0
0.3
0.6
0.9
1.5
1.2
V
SS
, SOURCE−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 9. Transfer Characteristics
Figure 8. On−Region Characteristics
6
10
9
T = 25°C
S
Single pulse
A
V
GS
= 2.5 V, I = 5 A
S
I
= 5 A
5
4
3
2
1
0
8
Single pulse
V
= 3.1 V, I = 5 A
S
GS
7
6
5
4
3
2
1
0
V
GS
= 3.8 V, I = 5 A
S
V
GS
= 4.5 V, I = 5 A
S
0
1
2
3
4
5
7
8
9
10
6
0
40
−60 −40 −20
20
60 80 100 120 140 160
T , AMBIENT TEMPERATURE (°C)
A
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 10. On−Resistance vs. Gate−to−Source
Figure 11. On−Resistance vs. Temperature
Voltage
1000
100
10
10
V
GS
= 0 V
t
d(off)
T = 75°C
A
t
f
25°C
1.0
t
r
−25°C
t
d(on)
0.1
V
V
S
= 6 V
SS
GS
= 4.5 V
I = 3 A
1
0.01
10
0.1
1.0
I , SOURCE CURRENT (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
F(S-S)
, FORWARD SOURCE TO SOURCE VOLTAGE (V)
S
Figure 12. Forward Source−to−Source Voltage vs.
Figure 13. Switching Time vs. Source Current
Current
www.onsemi.com
4
EFC2J022NUZ
1000
100
4.5
V
= 6 V
= 18 A
SS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
I
S
t
d(off)
t
f
10
1
t
r
t
d(on)
10
RG, GATE RESISTANCE (KW)
1
0
10
20
30
40
50
Q , TOTAL GATE CHARGE (nC)
g
Figure 14. Switching Time vs. Gate Resostance
Figure 15. Gate−To−Source Voltage vs.
Total Charge
2.0
1.8
1.6
1.4
1.2
1.0
100
10
I
= 76 A (PW ≤ 100 ms)
ABSOLUT
MAXIMUM
RATINGS
SP
Surface mounted on ceramic substrate
(5000 mm x 0.8 mm)
100 μs
2
I
S
= 18 A
1 ms
10 ms
100 ms
Operation in
this area is limited
0.8
0.6
0.4
0.2
by R (on).
SS
1
DC Operation
T
A
= 25°C
Single Pulse
When mounted on ceramic substrate
2
(5000 mm x 0.8 mm)
0.1
0.0
0.01
0.1
1
10
100
0
25
50
75
100
125
150
175
T , AMBIENT TEMPERATURE (°C)
A
V
SS
, SOURCE TO SOURCE VOLTAGE (V)
Figure 16. Safe Operating Area
Figure 17. Total Dissipation vs. Temperature
100
Duty Cycle = 50%
20%
10
10%
5%
2%
1%
1.0
0.1
Single Pulse
Surface mounted on ceramic substrate
2
(5000 mm x 0.8 mm)
0.001
0.01
P , PULSE TIME (S)
0.1
1.0
10
1E−05
0.0001
T
Figure 18. Thermal Response
www.onsemi.com
5
EFC2J022NUZ
ORDERING INFORMATION
Device
†
Marking
Package
Shipping (Qty / Packing)
EFC2J022NUZTCG
NJ
WLCSP10 1.84x1.96x0.10
(Pb−Free / Halogen Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Note on usage: Since the EFC2J022NUZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales
for use except the designated application.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WLCSP10 1.84x1.96x0.10
CASE 567PH
ISSUE A
SCALE 4:1
DATE 06 APR 2017
NOTES:
D
A
B
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM
A
b
b1
b2
D
E
e
e1
e2
e3
MIN
0.08
0.22
0.22
0.50
NOM
0.10
0.25
0.25
0.53
1.84 BSC
1.96 BSC
0.90 BSC
0.50 BSC
0.40 BSC
0.64 BSC
MAX
0.12
0.28
0.28
0.56
PIN A1
REFERENCE
2X
0.03
0.03
C
C
2X
TOP VIEW
A
0.03
0.03
C
RECOMMENDED
C
SEATING
SOLDERING FOOTPRINT*
C
SIDE VIEW
e1
PLANE
0.50 PITCH
0.40 PITCH
8X
0.25
8X b1
0.05
2
10
e2
M
C A B
PACKAGE
OUTLINE
1
4
6
9
8X
0.53
8
3
e3
0.64 PITCH
3
2X
8
0.25
2X
b
0.05
1
9
M
C A B
0.90 PITCH
DIMENSIONS: MILLIMETERS
2
5
7
10
8X b2
C A B
e
M
0.05
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13263G
WLCSP10 1.84X1.96X0.10
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明