EMI8133MUTAG [ONSEMI]
带 ESD 保护的共模滤波器;
| 型号： | EMI8133MUTAG |
| 厂家： | 
ONSEMI |
| 描述： | 带 ESD 保护的共模滤波器 |
| 文件： | 总9页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMI8131, EMI8132,
EMI8133
Common Mode Filter with
ESD Protection
Functional Description
www.onsemi.com
XDFN10
The EMI813x is a family of Common Mode Filters (CMF) with
integrated ESD protection, a first in the industry. Differential signaling
I/Os can now have both common mode filtering and ESD protection in
one package. The EMI813x protects against ESD pulses up to 15 kV
contact per the IEC61000−4−2 standard.
The EMI813x is well−suited for protecting systems using
high−speed differential ports such as MIPI D−PHY; corresponding
ports in removable storage, and other applications where ESD
protection are required in a small footprint package.
XDFN6
XDFN16
CASE 711AW
CASE 711AV CASE 711AU
MARKING DIAGRAMS
MA M
M2 M
M3 M
G
G
G
The EMI813x is available in a RoHS−compliant, XDFN−10 for 2
Differential Pair and XDFN−16 package for 3 Differential Pair.
1
1
1
XX = Specific Device Code
M
G
= Date Code
= Pb−Free Package
Features
• Total Insertion Loss DM
< 3.7 dB at 2.5 GHz
LOSS
• Large Differential Mode Cutoff Frequency f
> 2.5 GHz
3dB
ELECTRICAL SCHEMATICS
• High Common Mode Stop Band Attenuation
• Low Channel Resistance 6.0 W
• Provides ESD Protection to IEC61000−4−2 Level 4, 15 kV Contact
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
EMI8132
Compliant
Applications
• USB 3.0
• MHL 2.0
• mSD Card
• eSATA
• HDMI/DVI Display in Mobile Phones
• MIPI D−PHY (CSI−2, DSI, etc) in Mobile Phones and Digital Still
Cameras
EMI8133
ORDERING INFORMATION
†
Device
Package
Shipping
EMI8131MUTAG
EMI8132MUTAG
XDFN6 3000 / Tape & Reel
XDFN10 3000 / Tape & Reel
EMI8133MUTAG,
XDFN16 3000 / Tape & Reel
SZEMI8133MUTAG
Figure 1. EMI8131 Electrical Schematic
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
January, 2018 − Rev. 1
EMI8132/D
EMI8131, EMI8132, EMI8133
PIN FUNCTION DESCRIPTION
Device Pin
EMI8131
1
EMI8132
EMI8133
Pin Name
In_1+
Type
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
GND
Description
CMF Channel 1+ to Connector (External)
CMF Channel 1− to Connector (External)
CMF Channel 1+ to ASIC (Internal)
CMF Channel 1− to ASIC (Internal)
CMF Channel 2+ to Connector (External)
CMF Channel 2− to Connector (External)
CMF Channel 2+ to ASIC (Internal)
CMF Channel 2− to ASIC (Internal)
CMF Channel 3+ to Connector (External)
CMF Channel 3− to Connector (External)
CMF Channel 3+ to ASIC (Internal)
CMF Channel 3− to ASIC (Internal)
Ground
1
2
1
In_1−
2
2
Out_1+
Out_1−
In_2+
6
10
9
16
5
15
NA
NA
NA
NA
NA
NA
NA
NA
3,4
4
4
In_2−
5
5
Out_2+
Out_2−
In_3+
7
13
6
12
NA
NA
NA
NA
3, 8
7
In_3−
8
Out_3+
Out_3−
VN
10
9
3,6,14,11
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Parameter
Operating Temperature Range
Symbol
Value
−40 to +85
−65 to +150
260
Unit
°C
T
OP
Storage Temperature Range
T
STG
°C
Maximum Lead Temperature for Soldering Purposes
(1/8” from Case for 10 seconds)
T
L
°C
DC Current per Line
I
100
mA
LINE
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
2
EMI8131, EMI8132, EMI8133
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
V
RWM
Reverse Working Voltage
(Note 3)
3.3
V
Breakdown Voltage
I = 1 mA; (Note 4)
4.0
9.0
1.0
V
BR
T
I
Channel Leakage Current
T = 25°C, V = 3.3 V, GND = 0 V
mA
W
LEAK
A
IN
R
Channel Resistance
6.0
CH
(Pins 1−6, 2−5) − EMI8131
(Pins 1−10, 2−9, 4−7 and 5−6) − EMI8132
(Pins 1−16, 2−15, 4−13, 5−12, 7−10 and 8−9) − EMI8133
DM
Differential Mode Insertion Loss
@ 2.5 GHz
3.7
2.5
dB
LOSS
f
Differential Mode Cut-off Frequency
50 W Source and Load
GHz
3dB
Termination
F
Common Mode Stop Band Attenuation
@ 750 MHz
30
dB
kV
atten
V
In-system ESD Withstand Voltage
a) Contact discharge per IEC 61000-4-2 standard, Level 4
(External Pins)
b) Contact discharge per IEC 61000-4-2 standard, Level 1
(Internal Pins)
(Notes 1 and 2)
ESD
15
2
V
CL
TLP Clamping Voltage
Forward I = 8 A
8.94
13.4
V
PP
Forward I = 16 A
PP
Forward I = −8 A
−3.96
−7.62
PP
Forward I = −16 A
PP
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Standard IEC61000−4−2 with C
= 150 pF, R
= 330, GND grounded.
Discharge
Discharge
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
), which should be equal to or greater than the DC
RWM
4. V is measured at pulse test current I .
BR
T
www.onsemi.com
3
EMI8131, EMI8132, EMI8133
TYPICAL CHARACTERISTICS
0
−1
−2
−3
−4
−5
−6
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
1.E+05
−7
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 2. Typical Differential Mode Attenuation
vs. Frequency
Figure 3. Typical Common Mode Attenuation
vs. Frequency
Interface
Data Rate (Gb/s)
Fundamental Frequency (MHz)
ESD813x Differential Insertion Loss (dB)
MIPI
1.5
750
m1 = 1.25
Figure 4. Differential Mode Insertion Loss
www.onsemi.com
4
EMI8131, EMI8132, EMI8133
TRANSMISSION LINE PULSE (TLP) MEASUREMENTS
Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a
100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in
Figure 5. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10 s
of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 6 where an 8 kV
IEC61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP curve shows the voltage at
which the device turns on as well as how well the device clamps voltage over a range of current levels. Typical TLP I−V curves
for the EMI813x are shown in Figure 5.
Attenuator
L
50 W Coax Cable
SW
÷
50 W Coax Cable
VM
IM
10 MQ
VC
DUT
Oscilloscope
Figure 5. Simplified Schematic of a Typical TLP System
Figure 6. Comparison Between 8 kV IEC61000- 4- 2 and 8 A and 16 A TLP Waveforms
18
16
14
12
10
8
−18
−16
−14
−12
−10
−8
6
−6
−4
4
−2
2
0
0
0
2
4
6
8
10
12
14
16
18
0
−2
−4
−6
−8 −10 −12 −14 −16 −18
V (V)
clamp
V
clamp
(V)
Figure 7. Positive and Negative TLP Waveforms
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFN10 2.2x1.35, 0.4P
CASE 711AU
ISSUE B
DATE 17 JUN 2014
SCALE 4:1
NOTES:
A
B
E
D
L
L
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM THE TERMINAL TIP.
PIN ONE
REFERENCE
L1
2X
0.10
C
MILLIMETERS
DETAIL A
DIM MIN
MAX
0.50
0.05
ALTERNATE
A
A1
A3
b
0.40
0.00
CONSTRUCTIONS
2X
0.10 C
TOP VIEW
0.15 REF
0.15
0.25
D
2.20 BSC
1.35 BSC
0.40 BSC
0.40 0.60
--- 0.15
EXPOSED Cu
MOLD CMPD
A
C
DETAIL B
E
(A3)
0.10
0.08
C
e
L
L1
C
DETAIL B
ALTERNATE
GENERIC
MARKING DIAGRAM*
A1
SEATING
PLANE
CONSTRUCTION
SIDE VIEW
XX M
G
DETAIL A
8X L
e
5
1
XX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
10
6
b
10X
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
M
M
C A B
0.10
NOTE 3
C
0.05
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT
9X
PACKAGE
OUTLINE
8X
0.25
0.65
1.55
1
0.50
0.40 PITCH
DIMENSIONS: MILLIMETERS
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83517F
XDFN10 2.2X1.35, 0.4P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFN6 1.40x1.35, 0.4P
CASE 711AV
ISSUE A
SCALE 4:1
DATE 04 JUN 2014
NOTES:
L
L
A
B
E
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
PIN 1
REFERENCE
2X
0.10
C
L1
MILLIMETERS
DETAIL A
DIM MIN
MAX
0.50
0.05
ALTERNATE TERMINAL
CONSTRUCTIONS
A
A1
A3
b
0.40
0.00
2X
6X
0.10 C
TOP VIEW
0.15 REF
0.15
0.25
EXPOSED Cu
MOLD CMPD
D
1.40 BSC
1.35 BSC
0.40 BSC
0.40 0.60
--- 0.15
A
DETAIL B
E
(A3)
0.10
0.08
C
C
e
A1
L
L1
DETAIL B
ALTERNATE
GENERIC
MARKING DIAGRAM*
SEATING
PLANE
CONSTRUCTION
C
SIDE VIEW
e
XXMG
6X
L
G
1
3
DETAIL A
XX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
4
6
6X b
(Note: Microdot may be in either location)
M
C A B
0.10
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
NOTE 3
C
M
0.05
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT
6X
0.65
0.40
PITCH
1.55
1
0.50
5X
0.25
DIMENSIONS: MILLIMETERS
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83554F
XDFN6 1.40X1.35, 0.4P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFN16 3.5x1.35, 0.4P
CASE 711AW
16
ISSUE A
DATE 17 JUN 2014
1
SCALE 4:1
A
B
D
L
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2X
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
0.10
C
L1
DETAIL A
PIN ONE
E
REFERENCE
ALTERNATE TERMINAL
CONSTRUCTIONS
MILLIMETERS
DIM MIN
MAX
0.50
0.05
2X
A
A1
A3
b
0.40
0.00
0.15 REF
0.15
3.50 BSC
0.10
C
TOP VIEW
EXPOSED Cu
MOLD CMPD
0.25
DETAIL B
A
D
(A3)
E
e
1.35 BSC
0.40 BSC
0.10
C
C
L
L1
0.40
−−−
0.60
0.15
DETAIL B
ALTERNATE
16X
0.08
CONSTRUCTION
SEATING
PLANE
A1
NOTE 4
C
SIDE VIEW
GENERIC
MARKING DIAGRAM*
e/2
DETAIL A
e
XXXM
G
12X L
8
1
1
XXX = Specific Device Code
16
9
M
= Month Code
16X b
G
= Pb−Free Package
0.10
0.05
C
C
A B
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
NOTE 3
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
12X
0.65
0.40
PITCH
1.55
1
15X
0.25
0.55
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83555F
XDFN16 3.5X1.35, 0.4P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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