ESDM2033MX4T5G [ONSEMI]
3.3 V Bidirectional ESD Protection Diode in X4DFN (0201);
| 型号： | ESDM2033MX4T5G |
| 厂家： | 
ONSEMI |
| 描述： | 3.3 V Bidirectional ESD Protection Diode in X4DFN (0201) |
| 文件： | 总7页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
ESD Protection Diodes
Micro−packaged Diodes for ESD
Protection
ESDM2033
The ESDM2033 is designed to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast
response time provide best in class protection on designs that are
exposed to ESD. Because of its small size, it is suited for use in
smartphone, smart-watch, or many other portable / wearable
applications where board space comes at a premium.
www.onsemi.com
MARKING
DIAGRAM
X4DFN2
(0201)
CASE 152AX
Features
P
• Low Capacitance (5.5 pF Max, I/O to GND)
• Small Body Outline Dimensions
P
= Specific Device Code
♦ 0.6 x 0.3 mm
• Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
• Low ESD Clamping Voltage
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PIN CONFIGURATION
AND SCHEMATIC
1
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
−55 to +125
−55 to +150
260
Unit
°C
Operating Junction Temperature Range
Storage Temperature Range
T
J
=
T
stg
°C
Lead Solder Temperature −
Maximum (10 Seconds)
T
L
°C
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ESD
ESD
15
15
kV
kV
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of
survivability specs.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
August, 2020 − Rev. 0
ESDM2033/D
ESDM2033
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Conditions
Min
Typ
Max
3.3
6.5
0.1
Unit
V
Reverse Working Voltage
Breakdown Voltage
V
RWM
I/O Pin to GND
= 1 mA, I/O Pin to GND
V
BR
I
3.68
5.0
V
T
Reverse Leakage Current
I
R
V
= 3.3 V, I/O Pin to GND
RWM
mA
V
Clamping Voltage
TLP (Note 1)
V
C
5.5
6.5
I
PP
= 8 A
IEC 61000−4−2 Level 2 equivalent
( 4 kV Contact, 4 kV Air)
I
PP
= 16 A
IEC 61000−4−2 Level 2 equivalent
( 8 kV Contact, 15 kV Air)
Junction Capacitance
C
V
R
= 0 V, f = 1 MHz
5.5
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z = 50 W, t = 100 ns, t = 4 ns, averaging window; t = 30 ns to t = 60 ns.
0
p
r
1
2
ORDERING INFORMATION
Device
†
Package
Shipping
ESDM2033MX4T5G
X4DFN2
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
ESDM2033
TYPICAL CHARACTERISTICS
10
9
2
0
8
7
6
5
4
3
2
−2
−4
−6
−8
1
0
−10
−3.5 −2.5
−1.5
−0.5
0.5
(V)
1.5
2.5
3.5
1.E+07
1.E+08
1.E+09
V
BIAS
FREQUENCY (Hz)
Figure 1. CV Characteristics
Figure 2. S21 Insertion Loss
10
9
8
7
6
5
4
3
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
FREQUENCY (GHz)
Figure 3. Capacitance over Frequency
10
8
−20
−18
20
18
10
8
−16
−14
−12
−10
−8
16
14
12
10
8
6
6
4
4
−6
6
−4
2
0
4
2
0
−2
0
2
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
V , VOLTAGE (V)
C
V , VOLTAGE (V)
C
Figure 4. Positive TLP I−V Curve
Figure 5. Negative TLP I−V Curve
www.onsemi.com
3
ESDM2033
TYPICAL CHARACTERISTICS
Figure 6. Positive 8 kV ESD Contact Discharge
Figure 7. Negative 8 kV ESD Contact Discharge
www.onsemi.com
4
ESDM2033
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 8. IEC61000−4−2 Spec
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 9. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 10 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 9. Simplified Schematic of a Typical TLP
System
Figure 10. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
www.onsemi.com
5
ESDM2033
PACKAGE DIMENSIONS
DFN2, 0.60x0.30, 0.36P
CASE 152AX
ISSUE G
A
B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
PIN 1
INDICATOR
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
E
DIM MIN
NOM MAX
A
A1
b
D
E
e
L
0.175 0.200 0.225
0.018 REF
0.205 0.215 0.225
0.575 0.600 0.625
0.275 0.300 0.325
0.36 BSC
TOP VIEW
SIDE VIEW
A
0.02
0.01
C
C
0.145 0.155 0.165
A1
RECOMMENDED
SOLDER FOOTPRINT*
SEATING
PLANE
C
0.65
2X
0.27
e
1
b
1
2X
0.26
M
0.05
C A B
DIMENSIONS: MILLIMETERS
2X
L
C A B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
0.05
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明