FCA36N60NF [ONSEMI]
功率 MOSFET，N 沟道，SUPREMOS®，FRFET®， 600 V，34.9 A，95 mΩ，TO-3P;
| 型号： | FCA36N60NF |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPREMOS®，FRFET®， 600 V，34.9 A，95 mΩ，TO-3P 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2014 年 2 月
FCA36N60NF
N 沟道 SupreMOS FRFET MOSFET
600 V、34.9 A、95 m
®
®
特性
说明
SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）
技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工
艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-
resistance （导 通 电 阻 规 格） ，卓 越 的 开 关 性 能 和 耐 用 性。
SupreMOS MOSFET 技术适用于高频开关电源转换器应用，如
功率因数校正 (PFC)、服务器 / 电信电源、平板电视电源、 ATX
电源及工业电源应用。 SupreMOS FRFET® MOSFET 优化版的
本体二极管的反向恢复性能可去除额外元件并提高系统可靠性。
•
•
•
•
•
RDS(on) = 80 m (Typ.)@VGS = 10V, ID = 18 A
超低栅极电荷 （典型值 Qg = 86 nC)
低有效输出电容 （典型值 Coss(eff.)= 338 pF)
100% 经过雪崩测试
符合 RoHS 标准
应用
•
太阳能逆变器
•
AC-DC 电源
D
G
G
D
TO-3PN
S
S
MOSFET 最大额定值 TC = 25°C 除非另有说明。
FCA36N60NF
600
符号
VDSS
VGSS
参数
单位
V
漏极－源极电压
栅极－源极电压
±30
V
34.9
22
连续 (TC = 25°C)
连续 (TC = 100°C)
脉冲
ID
A
漏极电流
IDM
EAS
IAR
104.7
1800
12
A
mJ
A
漏极电流
（说明 1）
（说明 2）
（说明 1）
（说明 1）
单脉冲雪崩能量
雪崩电流
EAR
3.12
100
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
50
二极管恢复 dv/dt 峰值
（说明 3）
(TC = 25°C)
312
W
W/°C
°C
功耗
2.6
降低至 25°C 以上
TJ, TSTG
TL
工作和存储温度范围
-55 至 +150
用于焊接的最高引脚温度，
距离外壳 1/8”，持续 5 秒
300
°C
热性能
FCA36N60NF
符号
RJC
参数
单位
结至外壳热阻最大值
0.40
0.24
40
RCS
外壳与散热体之间的热阻典型值
结至环境热阻最大值
°C/W
RJA
www.fairchildsemi.com
©2011 飞兆半导体公司
1
FCA36N60NF Rev. C1
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FCA36N60NF
FCA36N60NF
TO-3PN
不适用
30 单元
电气特性
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 1 mA， VGS = 0 V， TJ = 25°C
D = 1 mA，参考条件为 25°C
VDS = 480 V，VGS = 0 V
TJ = 125°C
600
-
-
-
-
V
漏极 - 源极击穿电压
BVDSS
/ TJ
击穿电压温度系数
I
0.60
V/°C
-
-
-
-
-
-
10
IDSS
IGSS
A
零栅极电压漏极电流
100
VGS = ±30 V，VDS = 0 V
±100
nA
栅极 - 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS，ID = 250 A
VGS = 10 V，ID = 18 A
VDS = 20 V，ID = 18 A
3.0
3.7
80
39
5.0
95
-
V
m
S
栅极阈值电压
-
-
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
-
3191
145
5
4245
pF
pF
pF
pF
pF
nC
nC
nC
输入电容
VDS = 100 V， VGS = 0 V，
f = 1 MHz
Coss
195
输出电容
Crss
8
反向传输电容
Coss
VDS = 380 V，VGS = 0 V，f = 1 MHz
VDS = 0 V， 480 V， VGS = 0 V
81
-
输出电容
Cosseff.
Qg(tot)
Qgs
338
86
-
有效输出电容
112
10 V 的栅极电荷总量
栅极 - 源极栅极电荷
栅极 - 漏极 “ 米勒 ” 电荷
等效串联电阻 (G-S)
VDS = 380 V，ID = 18 A，
16
-
-
-
V
GS = 10 V
（说明 4）
Qgd
36
ESR
f = 1 MHz
1.2
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
27
17
92
4
64
44
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 380 V，ID = 18 A，
V
GS = 10 V，RG = 4.7
194
18
（说明 4）
漏极 - 源极二极管特性
IS
-
-
-
-
-
-
-
36
108
1.2
-
A
A
漏极 - 源极二极管最大正向连续电流
漏极 - 源极二极管最大正向脉冲电流
漏极 - 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V，ISD = 18 A
-
V
166
1.3
ns
C
VGS = 0 V，ISD = 18 A，
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 12 A， R = 25 ，启动 T = 25°C。
AS
G
J
3. I 36 A， di/dt 1200 A/s， V = 380 V，启动 T = 25°C。
SD
DD
J
4. 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2011 飞兆半导体公司
2
FCA36N60NF Rev. C1
典型性能特征
图 1. 通态区域特性
图 2. 传输特性
200
200
VGS = 15.0 V
10.0 V
8.0 V
100
100
7.0 V
6.0 V
5.0 V
10
25oC
150oC
*Notes:
1. 250s Pulse Test
10
2. TC = 25oC
-55oC
1
*Notes:
1. VDS = 20V
2. 250s Pulse Test
1
0.1
0.2
1
10
20
2
4
6
8
10
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图 3. 导通电阻变化 vs. 漏极电流和栅极电压
图 4. 体二极管正向电压变化与源极电流和温度
150
200
100
125
10
VGS = 10V
150oC
100
25oC
VGS = 20V
75
1
*Notes:
1. VGS = 0V
*Notes: TC = 25oC
2. 250s Pulse Test
0.2
0.2
50
0.4
0.6
0.8
1.0
1.2
1.4
0
18
36
54
72
90
108
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图 5. 电容特性
图 6. 栅极电荷特性
10
100000
10000
1000
100
10
8
Ciss
VDS = 120V
VDS = 300V
VDS = 480V
6
4
2
0
Coss
*Notes:
1. VGS = 0V
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
*Notes: ID = 18A
80
1
0.1
1
10
100
600
0
20
40
60
100
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
©2011 飞兆半导体公司
3
FCA36N60NF Rev. C1
典型性能特征 （接上页）
图 7. 击穿电压变化与温度
图 8. 导通电阻变化与温度
3.0
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 1mA
2. ID = 18A
-100
-50
0
50
100
150
-100
-50
0
50
100
150
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
图 9. 最大安全工作区
图 10. 最大漏极电流与外壳温度
500
100
40
10s
30
20
10
0
100s
1ms
10ms
10
Operation in This Area
is Limited by R DS(on)
DC
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.1
3. Single Pulse
0.01
25
50
75
100
125
150
1
10
100
1000
o
TC, Case Temperature [ C]
VDS, Drain-Source Voltage [V]
图 11. 瞬态热响应曲线
1
0.5
0.1
0.2
0.1
PDM
0.05
0.02
t1
t2
0.01
0.01
*Notes:
Single pulse
1. ZJC(t) = 0.40oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.005
10-5
10-4
10-3
10-2
10-1
100
101
102
t
1，矩形脉冲持续时间 [ 秒 ]
www.fairchildsemi.com
©2011 飞兆半导体公司
4
FCA36N60NF Rev. C1
I
= 常量
G
图 12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 13. 阻性开关测试电路与波形
VGS
图 14. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
©2011 飞兆半导体公司
5
FCA36N60NF Rev. C1
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 15. 峰值二极管恢复 dv/dt 测试电路与波形
www.fairchildsemi.com
©2011 飞兆半导体公司
6
FCA36N60NF Rev. C1
5.00
4.60
13.80
13.40
1.65
1.45
3.30
3.10
16.20
15.40
5.20
4.80
R0.50
3°
16.96
16.56
20.10
19.70
18.90
18.50
7.20
6.80
3°
4°
1
3
2.00
1.60
3.70
3.30
1.85
2.60
2.20
20.30
19.70
2.20
1.80
3.20
2.80
1.20
0.80
M
0.55
0.75
0.55
5.45
5.45
NOTES: UNLESS OTHERW ISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSION AND TOLERANCING PER
ASME14.5-2009.
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSSIONS.
E) DRAW ING FILE NAME: TO3PN03AREV2.
F) FAIRCHILD SEMICONDUCTOR.
R0.50
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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