FCD3400N80Z [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，800 V，2 A，3.4 Ω，DPAK;
| 型号： | FCD3400N80Z |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，800 V，2 A，3.4 Ω，DPAK |
| 文件： | 总11页 (文件大小：846K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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March 2015
FCD3400N80Z / FCU3400N80Z
®
N-Channel SuperFET II MOSFET
800 V, 2 A, 3.4 Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 2.75 Ω (Typ.)
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
Ultra Low Gate Charge (Typ. Qg = 7.4 nC)
Low Eoss (Typ. 0.9 uJ @ 400V)
Low Effective Output Capacitance (Typ. Coss(eff.) = 41 pF)
100% Avalanche Tested
RoHS Compliant
ESD Improved Capability
Applications
•
•
AC - DC Power Supply
LED Lighting
D
D
G
S
G
G
D-PAK
D
S
I-PAK
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
FCD3400N80Z
FCU3400N80Z
Symbol
VDSS
Parameter
Unit
Drain to Source Voltage
Gate to Source Voltage
800
±20
V
- DC
VGSS
ID
V
A
- AC
(f > 1 Hz)
±30
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
2.0
Drain Current
1.2
IDM
EAS
IAR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
4.0
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
12.8
0.4
EAR
Repetitive Avalanche Energy
MOSFET dv/dt
0.32
100
mJ
dv/dt
PD
V/ns
Peak Diode Recovery dv/dt
(Note 3)
20
(TC = 25oC)
- Derate Above 25oC
32
W
W/oC
oC
Power Dissipation
0.26
-55 to +150
300
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
oC
Thermal Characteristics
FCD3400N80Z
FCU3400N80Z
Symbol
Parameter
Unit
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
3.9
oC/W
62.5
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
1
Package Marking and Ordering Information
Part Number
FCD3400N80Z
FCU3400N80Z
Top Mark
Package
DPAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
75 units
FCD340080Z
FCU340080Z
IPAK
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 1 mA, TJ = 25°C
D = 1 mA, Referenced to 25oC
DS = 800 V, VGS = 0 V
800
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.9
V/oC
V
-
-
-
-
-
-
25
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
μA
VDS = 640 V, VGS = 0 V,TC = 125oC
250
±10
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 0.2 mA
VGS = 10 V, ID = 1 A
VDS = 20 V, ID = 1 A
2.5
-
2.75
2
4.5
3.4
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
299
12.7
0.36
6.2
400
pF
pF
pF
pF
pF
nC
nC
nC
Ω
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Output Capacitance
15
Reverse Transfer Capacitance
Output Capacitance
-
Coss
Coss(eff.)
Qg(tot)
Qgs
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
-
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
41
-
7.4
9.6
V
V
DS = 640 V, ID = 2 A,
GS = 10 V
1.6
-
-
-
(Note 4)
Qgd
3.1
ESR
f = 1 MHz
3.2
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
10
6.4
22.7
14
30
23
55
38
ns
ns
ns
ns
VDD = 400 V, ID = 2 A,
VGS = 10 V, Rg = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 2 A
-
-
-
-
-
-
-
1.6
3.8
1.2
-
A
A
ISM
VSD
trr
-
V
Reverse Recovery Time
119
868
ns
nC
V
GS = 0 V, ISD = 2 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I = 0.4 A, R = 25 Ω, starting T = 25°C
AS
G
J
3. I ≤ 2 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C
J
SD
DD
DSS
4. Essentially independent of operating temperature typical characteristic.
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
5
10
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
150oC
25oC
1
1
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
0.3
0.1
1
10
VDS, Drain-Source Voltage[V]
20
3
4
5
6
7
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10
6
5
4
3
2
1
*Note: TC = 25oC
150oC
1
25oC
VGS = 10V
0.1
VGS = 20V
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
10
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
VDS = 160V
= C
gd
1000
100
10
VDS = 400V
8
VDS = 640V
Ciss
6
Coss
4
2
Crss
1
*Note:
1. VGS = 0V
2. f = 1MHz
*Note: ID = 2A
0.1
0
0.1
1
10
100
1000
0
2
4
6
8
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2.5
2. ID = 1A
2. ID = 1mA
1.1
2.0
1.5
1.0
0.5
0.0
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
2.0
1.5
1.0
0.5
0.0
10μs
100μs
1
1ms
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
2.5
2.0
1.5
1.0
0.5
0
0
200
400
600
800
VDS, Drain to Source Voltage [V]
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
4
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
5
1
0.5
0.2
PDM
0.1
t1
0.05
t2
*Notes:
0.02
0.01
1. ZθJC(t) = 3.9oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.1
Single pulse
0.04
10-5
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
5
I
= const.
G
Fig 13. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Resistive Switching Test Circuit & Waveforms
VGS
Fig 15. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Fig 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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