FCD5N60-F085 [ONSEMI]
N 沟道，SuperFET®，600 V，4.6 A，0.86 Ω;
| 型号： | FCD5N60-F085 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，SuperFET®，600 V，4.6 A，0.86 Ω |
| 文件： | 总7页 (文件大小：909K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FCD5N60-F085
®
N-Channel SuperFET MOSFET
600 V, 4.6 A, 1.1 Ω
Features
600V, 4.6A, typ. R
=860mΩ@V =10V
GS
ds(on)
D
Ultra Low Gate Charge (Typ. Q = 16 nC)
g
UIS Capability
RoHS Compliant
Qualified to AEC Q101
D
G
G
Applications
S
D-PAK
(TO-252)
Automotive On Board Charger
S
Automotive DC/DC Converter for HEV
Description
SuperFETTM is ON Semiconductor proprietary new generation
of high voltage MOSFETs utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is suitable for various automotive DC/DC
power conversion.
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
Ratings
600
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
VGS
±30
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
TC = 25°C
TC = 25°C
4.6
ID
A
See Figure 4
EAS
PD
Single Pulse Avalanche Energy
(Note 1)
29
54
mJ
W
W/oC
oC
oC/W
oC/W
Power Dissipation
Derate Above 25oC
1.56
TJ, TSTG Operating and Storage Temperature
-55 to + 150
2.3
RθJC
RθJA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
(Note 2)
83
Notes:
1: Starting T = 25°C, L = 10mH, I = 2.4A, V = 100V during inductor charging and V = 0V during time in avalanche.
J
AS
DD
DD
2: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θJA
mounting surface of the drain pins.
presented here is based on mounting on a 1 in pad of 2oz copper.
R
is guaranteed by design, while R is determined by the board design. The maximum rating
θJC θJA
2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCD5N60
FCD5N60-F085
D-PAK(TO-252)
13”
16mm
2500units
©2015 Semiconductor Components Industries, LLC.
August-2017, Rev. 2
Publication Order Number:
FCD5N60-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
IDSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
ID = 250μA, VGS = 0V
600
-
-
-
-
-
1
V
V
DS=600V, TJ = 25oC
-
-
-
μA
μA
nA
VGS = 0V
TJ = 150oC (Note 4)
10
IGSS
VGS = ±30V
±100
On Characteristics
VGS(th)
RDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
VGS = VDS, ID = 250μA
3.0
-
5.0
1.1
3.2
V
Ω
Ω
TJ = 25oC
-
-
0.86
2.5
ID = 4.6A,
TJ = 150oC (Note 4)
V
GS= 10V
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
570
280
20
-
-
pF
pF
pF
Ω
V
DS = 25V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
1.9
16
-
Qg(ToT)
Qg(th)
Qgs
Total Gate Charge
VGS = 0 to 10V
VGS = 0 to 2V
21
-
nC
nC
nC
nC
VDD = 480V
ID = 4.6A
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
1.0
3.2
7.6
-
Qgd
-
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay
Rise Time
-
-
-
-
-
-
-
84
ns
ns
ns
ns
ns
ns
18
19
48
13
-
-
-
V
DD = 300V, ID = 4.6A,
VGS = 10V, RGEN = 25Ω
td(off)
tf
Turn-Off Delay
Fall Time
-
-
toff
Turn-Off Time
178
Drain-Source Diode Characteristics
VSD
trr
Source-to-Drain Diode Voltage
Reverse-Recovery Time
ISD = 4.6A, VGS = 0V
-
-
-
-
1.25
250
2.2
V
190
1.7
ns
μC
V
DD = 480V, IF = 4.6A,
dISD/dt = 100A/μs
Qrr
Reverse-Recovery Charge
Note:
4: The maximum value is specified by design at T = 150°C. Product is not tested to this condition in production.
J
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2
Typical Characteristics
8
6
4
2
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 10V
CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 1. Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
0.01
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
100
10
1
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
150 - TC
I = I2
125
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
Typical Characteristics
10
8
100
ID = 4.6A
VDD =300V
VDD = 240V
10
VDD = 360V
10us
6
1
100us
4
1ms
10ms
100ms
OPERATION IN THIS
0.1
SINGLE PULSE
AREA MAY BE
LIMITED BY r
2
T
J
= MAX RATED
DS(on)
o
T
C
= 25
C
0.01
1
0
0
4
8
12
16
10
100
1000 2000
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 6. Gate Charge vs. Gate to Source Voltage
Figure 5. Forward Bias Safe Operating Area
20
20
VGS = 0 V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
10
16
VDD = 20V
12
TJ = 150 o
C
TJ = 25 o
C
1
8
TJ = 25oC
TJ = 150oC
4
TJ = -55oC
0
0.1
3
4
5
6
7
8
9
10
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
14
8
80μs PULSE WIDTH
Tj=25oC
80μs PULSE WIDTH
Tj=150oC
7
12
10
8
6
VGS
15V Top
10V
8V
5
VGS
15V Top
10V
8V
7V
4
7V
6V
6
5.5V
5V Bottom
3
6V
4
5.5V
5V Bottom
2
2
1
0
0
0
4
8
12
16
20
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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Typical Characteristics
6
3.0
2.5
2.0
1.5
1.0
0.5
0.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 4.6A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
5
4
3
2
1
0
TJ = 150oC
ID = 4.6A
GS = 10V
V
TJ = 25oC
5
6
7
8
9
10
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.4
1.2
VGS = VDS
= 250μA
ID = 1mA
I
D
1.2
1.0
0.8
0.6
0.4
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
1000
100
10
Ciss
Coss
f = 1MHz
GS = 0V
V
Crss
1
0.1
1
10
100
1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs. Drain to Source
Voltage
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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