FCH110N65F-F155 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，35 A，110 mΩ，TO-247;
| 型号： | FCH110N65F-F155 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® II，FRFET®，650 V，35 A，110 mΩ，TO-247 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：1471K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2014 年9 月
FCH110N65F
®
®
N 沟道SuperFET II FRFET MOSFET
650 V, 35 A, 110 mΩ
特性
•
描述
SuperFET® II MOSFET 是飞兆半导体利用电荷平衡技术实现出
色的低导通电阻和更低栅极电荷性能的全新高压超级结
(SJ)MOSFET 系列产品。这项技术专用于最小化导通损耗并提供
卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET
II MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服
务器 / 电信电源、平板电视电源、ATX 电源及工业电源应用。
SuperFET II FRFET® MOSFET 优化体二极管的反向恢复性能可
去除额外元件，提高系统可靠性。
700 V @ TJ = 150°C
• 典型值RDS(on) = 96 mΩ （典型值）
• 超低栅极电荷（典型值Qg = 98 nC)
• 低有效输出电容（典型值Coss(eff.)= 308 pF）
•
100% 经过雪崩测试
• 符合RoHS 标准
应用
•
LCD / LED / PDP TV
• 通信/ 服务器电源
• 太阳能逆变器
•
AC-DC 电源
D
G
TO-247
长引脚
G
D
S
S
绝对最大额定值TC = 25°C 除非另有说明。
FCH110N65F_F155
符号
参数
单位
VDSS
VGSS
650
±20
±30
35
V
漏极－源极电压
栅极－源极电压
- DC
V
A
- AC
(f > 1 Hz)
- 连续(TC = 25°C)
- 连续(TC = 100°C)
- 脉冲
ID
漏极电流
24
IDM
EAS
IAR
105
809
8
A
mJ
A
漏极电流
（注1）
（注2）
（注1）
（注1）
单脉冲雪崩能量
雪崩电流
EAR
3.57
100
50
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
二极管恢复dv/dt 峰值
（注3）
(TC = 25°C)
357
2.86
W
W/°C
°C
功耗
- 高于25°C 的功耗系数
TJ, TSTG
TL
工作和存储温度范围
-55 至+150
300
°C
用于焊接的最高引脚温度，距离外壳1/8”，持续5 秒
热性能
FCH110N65F_F155
符号
RθJC
参数
结至外壳热阻最大值
单位
0.35
40
°C/W
RθJA
结至环境热阻最大值
© 2014 飞兆半导体公司
FCH110N65F Rev. C0
1
www.fairchildsemi.com
封装标识与定购信息
器件编号
顶标
FCH110N65F
封装
包装方法
塑料管
卷尺寸
带宽
数量
FCH110N65F_F155
TO-247G03
N/A
N/A
30 颗
电气特性TC = 25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
V
GS = 0 V, ID = 10 mA, TJ = 25°C
650
700
-
-
-
-
V
漏极－源极击穿电压
VGS = 0 V, ID = 10 mA, TJ = 150°C
ΔBVDSS
/ ΔTJ
击穿电压温度系数
-
0.67
-
V/°C
ID = 10 mA, 参考25°C 数值
V
DS = 650 V, VGS = 0 V
-
-
-
-
110
-
10
-
IDSS
IGSS
μA
零栅极电压漏极电流
VDS = 520 V, TC = 125°C
VGS = ±20 V, VDS = 0 V
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 3.5 mA
VGS = 10 V, ID = 17.5 A
VDS = 20 V, ID = 17.5 A
3
-
-
5
110
-
V
mΩ
S
栅极阈值电压
96
30
漏极至源极静态导通电阻
正向跨导
-
动态特性
Ciss
-
-
-
-
-
-
-
-
-
3680
110
0.65
65
4895
pF
pF
pF
pF
pF
nC
nC
nC
Ω
输入电容
VDS = 100 V, VGS = 0 V,
f = 1 MHz
Coss
145
输出电容
Crss
-
反向传输电容
Coss
VDS = 380 V, VGS = 0 V, f = 1 MHz
-
输出电容
Coss(eff.)
Qg(tot)
Qgs
308
98
-
有效输出电容
VDS = 0 V 至520 V, VGS = 0 V
145
10 V 电压的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
等效串联电阻
V
V
DS = 380 V, ID = 17.5 A,
GS = 10 V
20
-
-
-
（注4）
Qgd
43
ESR
f = 1 MHz
0.7
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
31
21
89
5.7
72
52
ns
ns
ns
ns
导通延迟时间
导通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 17.5 A,
V
GS = 10 V, Rg = 4.7 Ω
188
21
（注4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
35
105
1.2
-
A
A
漏极- 源极二极管最大正向连续电流
ISM
VSD
trr
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
VGS = 0 V, ISD = 17.5 A
-
V
134
0.67
ns
μC
VGS = 0 V, ISD = 17.5 A,
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注：
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 8 A, R = 25 Ω, 开始于T = 25°C。
AS
G
J
3. I ≤ 17.5 A, di/dt ≤ 200 A/μs, V ≤ 380 V, 开始于T = 25°C。
SD
DD
J
4. 典型特性本质上独立于工作温度。
© 2014 飞兆半导体公司
FCH110N65F Rev. C0
2
www.fairchildsemi.com
典型性能特征
图1. 导通区域特性
图2. 传输特性
200
200
VGS = 10.0V
*Notes:
1. VDS = 20V
8.0V
100
100
10
1
7.0V
6.5V
6.0V
5.5V
2. 250μs Pulse Test
150oC
10
25oC
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.3
1
10
20
3
4
5
6
7
8
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源极电流和温度的关系
0.25
200
100
0.20
10
150oC
1
0.15
25oC
VGS = 10V
0.1
0.10
VGS = 20V
0.01
*Notes:
1. VGS = 0V
*Note: TC = 25oC
60 80
ID, Drain Current [A]
2. 250μs Pulse Test
0.05
0.001
0
20
40
100
0.0
0.3
0.6
0.9
1.2
1.5
1.8
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
图6. 栅极电荷特性
10
100000
*Note: ID = 17.5A
VDS = 130V
VDS = 325V
10000
1000
Ciss
8
6
4
2
0
VDS = 520V
Coss
100
*Note:
1. VGS = 0V
10
1
Crss
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
0.1
0.1
0
20
40
60
80
100
1
10
100
660
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
© 2014 飞兆半导体公司
FCH110N65F Rev. C0
3
www.fairchildsemi.com
典型性能特性（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
2.5
1.15
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
2. ID = 17.5A
2.0
2. ID = 10mA
1.10
1.05
1.00
0.95
0.90
1.5
1.0
0.5
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与壳温的关系
40
300
100
10μs
100μs
30
20
10
0
10
1ms
DC
Operation in This Area
is Limited by R DS(on)
1
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. Eoss 和漏极- 源极电压的关系
20
16
12
8
4
0
0
132
264
396
528
660
VDS, Drain to Source Voltage [V]
© 2014 飞兆半导体公司
FCH110N65F Rev. C0
4
www.fairchildsemi.com
典型性能特性（接上页）
图12. 瞬态热响应曲线
1
0.5
0.1
0.01
0.2
PDM
0.1
t1
0.05
t2
0.02
0.01
*Notes:
1. ZθJC(t) = 0.35oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.001
10-5
10-4
10-3
t1, Rectangular Pulse Duration [sec]
10-2
10-1
1
© 2014 飞兆半导体公司
FCH110N65F Rev. C0
5
www.fairchildsemi.com
I
= 常量
G
图13. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图14. 阻性开关测试电路与波形
VGS
图15. 非箝位电感开关测试电路与波形
© 2014 飞兆半导体公司
FCH110N65F Rev. C0
6
www.fairchildsemi.com
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图16. 二极管恢复dv/dt 峰值测试电路与波形
© 2014 飞兆半导体公司
FCH110N65F Rev. C0
7
www.fairchildsemi.com
机械尺寸
图17. TO247，模塑，3 引脚，Jedec AB 长引脚
封装图纸是作为一项服务提供给考虑飞兆半导体元件的客户的。图纸可能会在没有任何通知的情况下做出一些改动。请注意图纸上的版
本或日期，如有疑问，请联系飞兆半导体代表核实或获得最新版本。封装规格说明并不扩大飞兆半导体全球范围内的条款与条件，尤其
是其中涉及飞兆半导体产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3
© 2014 飞兆半导体公司
FCH110N65F Rev. C0
8
www.fairchildsemi.com
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®
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© 2014 飞兆半导体公司
FCH170N60 Rev. C2
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