FCH35N60 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，35 A，98 mΩ，TO-247;
| 型号： | FCH35N60 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，35 A，98 mΩ，TO-247 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：509K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N ṿᬣ,
SUPERFET)
600 V, 35 A, 98 mW
FCH35N60
ᛄꢀ
www.onsemi.cn
SUPERFET MOSFET ꢀꢀꢁꢂꢃꢄꢁꢅꢆꢇꢂꢃꢄꢈꢅꢉꢊ
ꢋ ꢆ ꢌ ꢇ ꢍ ꢃ ꢈ ꢃ ꢉ ꢎ ꢏ ꢍ ꢊ ꢐ ꢃ ꢄ ꢑ ꢋ ꢌ ꢍ ꢒ ꢎ ꢏ ꢐ
(SJ) MOSFET ꢑꢓꢔꢕ。ꢒꢓꢉꢊ✃ꢂnᣠ෯Ӷꢃꢈᔿꢔ
ၖᖰŻԳꢕꢌრ͓ꢑꢋ、dv/dtꢖꢖꢗꢘꢎꢏꢍꢗꢙꢋꢘ。ꢚꢙ，
SUPERFET MOSFET ꢚꢛꢛꢂnრ͓ꢃꢜꢜꢂ，ꢝꢞꢝꢚꢟꢞ
ꢟꢖ(PFC)、ꢠꢡꢢꢖ/ꢖꢃꢣꢃꢜ、ꢈꢤꢃꢠꢃꢜ、ꢖATXꢖꢃꢜꢥꢦ
ꢧꢃꢜꢜꢂꢡ。
V
R
MAX
I MAX
D
DS
DS(ON)
600 V
98 mꢀ @ 10 V
35 A
D
ꢁ
•ꢨ650 V @ T = 150°C
J
•ꢨTyp. R
= 79 mꢀ
DS(on)
G
•ꢨꢎꢍꢊꢐꢃꢄ (ꢩꢪꢘ Q = 139 nC)
g
•ꢨꢍꢫꢬꢢꢌꢃꢭ (ꢩꢪꢘ C
•ꢨ100% ꢣꢤꢗꢙꢥꢦ
• This is a Pb−Free Device
= 340 pF)
oss(eff.)
S
N-CHANNEL MOSFET
ꢂ✈
•ꢨꢮꢧꢋꢨꢯꢢ
•ꢨAC−DC ꢃꢜ
G
D
S
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
35N60
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FCH35N60
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
April, 2021 − Rev. 3
FCH35N60CN/D
FCH35N60
MOSFET ꢃꢄ⍭ꢅꢆ(T = 25°C ꢀꢁꢀꢂꢃꢄ)
C
ꢇ ꢈꢉ
FCH35N60
600
ꢊꢋ
V
V
V
ꢅꢆ－⁰ꢆꢇꢁ
᧥ꢆೃ⁰ꢆꢇꢁ
ꢅꢆꢇἡ
DSS
30
V
GSS
I
D
35
A
- ঽ (T = 25°C)
C
- ঽ (T = 100°C)
22.2
C
I
ꢅꢆꢇἡ
- ꢂ(Ỉ 1)
105
A
mJ
A
DM
E
ꢃꢂ↺༉்Ჟ (Ỉ 2)
↺༉ꢇἡ (Ỉ 1)
Ოꢄ↺༉்Ჟ (Ỉ 1)
ꢅꢆ
ٱ
ቂꢄ dv/dt ໐ꢆ (Ỉ 3) ꢇ૧
1455
35
AS
AR
I
E
31.25
20
mJ
V/ns
W
AR
dv/dt
P
312.5
2.5
(T = 25°C)
C
D
- ▨ꢈ 25°C Ŕꢇ૧
ߋ
ᝐ W/°C
°C
T , T
࿅ꢉꢊꢋꢌꢈႆීꢍ
-55 ೃ + 150
300
J
STG
T
✈ꢈ⋪ᖅŔᣠꢎჵ௪ꢈႆ，ҋꢏꢐ 1/8”，ᓡঽ 5 Ң
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(ꢑᚡᝧ)
ꢒꢇꢁᡕ᪗ᣠꢎ⍭ꢓꢆጸꢔꢕꢖŔꢆීꢍ，ꢗꢘꢙ்ꢚᔿꢛ。ꢒᡕ᪗Ûĵ᪩{℠ꢆ，෦ៀẵƽᚑꢗꢘꢇ்，ꢙ்ꢚොೄꢗꢘᔿꢛ，ᅑ
ڭ
ꢙ∰ሇ。
*ꢅꢆꢇἡַ℠ꢈᣠꢎণꢈ。
1. Ოꢄ⍭ꢓꢆ：ꢂඝႆַ℠ꢈᣠꢎণꢈ。
2. I = 17.5 A, V = 50 V, R = 25 ꢀ, ꢉꢈ T = 25°C
AS
DD
G
J
3. I ≤ 35 A，di/dt ≤ 200 A/ꢁ s，V ≤ BV
，ꢉꢈ T = 25°C
SD
DD
DSS
J
ꢌ᎕᧧ᚖꢍꢅꢎꢏ
ꢐꢑ০ꢇ
⍆᧧
ꢌ᎕
ꢒ᎕ꢓẵ
ꢔꢕꢖ
ꢗꢘ
ꢉᲟ
FCH35N60
FCH35N60
TO−247−3LD
Tube
−
−
30 ꢊ
⋍ꢁ்
ꢇ ꢈꢉ
FCH35N60
ꢊꢋ
R
R
ণೃꢏꢐꢋꢌᣠꢎꢆ
ণೃꢍꢋꢌᣠꢎꢆ
0.4
42
°C/W
ꢂ
JC
JA
ꢂ
www.onsemi.cn
2
FCH35N60
ꢀᷴꢁ(T = 25°C ꢀꢁꢀꢂꢃꢄ)
C
ꢇ ꢈꢉ
Ἣᚥꢙꢑ
ꢃꢚꢆ ꢛꢜꢆ ꢃꢄꢆ
ꢊꢋ
V
ꢝꢞꢁ
BV
ꢅꢆ－⁰ꢆϛꢎꢇꢁ
600
−
−
−
−
−
I
I
= 250 ꢁ A, V = 0 V, T = 25°C
GS J
DSS
D
= 250 ꢁ A, V = 0 V, T = 150°C
650
0.6
D
GS
J
ꢃ
B
V
ϛꢎꢇꢁꢈႆ
ߋ
ᝐ I
D
= 250 ꢁ A, ꢑ 25°C ᝐꢆ
−
V/°C
DSS
J
/
ꢃ
T
BV
ꢅ⁰ꢆ↺༉ϛꢎꢇꢁ
ꢏ᧥ꢆꢇꢁꢅꢆꢇἡ
V
= 0 V, I = 16 A
−
−
−
−
700
−
−
V
DS
GS
DS
DS
GS
D
I
V
V
V
= 600 V, V = 0 V
1
ꢁ
A
DSS
GS
= 480 V, T = 125°C
−
10
100
C
I
᧥ꢆ - ijꢅꢇἡ
=
30 V, V = 0 V
−
nA
GSS
DS
ꢟꢁ
V
᧥ꢆꢐꢆꢇꢁ
V
GS
V
GS
V
DS
= V , I = 250 ꢁ A
3.0
−
−
5.0
0.098
−
V
ꢀ
S
GS(th)
DS
D
R
ꢅꢆೃ⁰ꢆꢑꢒොꢓꢇꢌ
ꢔ
ױ
ꢕො = 10 V, I = 17.5 A
0.079
28.8
DS(on)
D
g
FS
= 40 V, I = 17.5 A
−
D
ꢠꢡꢁ
C
ꢖͅꢇ
V
= 25 V, V = 0 V,
−
−
−
−
−
−
−
−
−
4990
2380
140
113
340
139
31
6640
pF
pF
pF
pF
pF
nC
nC
nC
ꢀ
iss
oss
rss
DS
GS
f = 1 MHz
C
C
ꢖꢖꢇ
3170
֭
ױ
Āꢖꢇ −
−
C
ꢖꢖꢇ
V
V
= 480 V, V = 0 V, f = 1 MHz
GS
oss
DS
C
eff.
ꢂꢗꢖꢖꢇ
= 0 V to 480 V, V = 0 V
−
oss
DS
GS
Q
10 V ꢇꢁŔ᧥ꢆꢇꢘꢙᲟ
᧥ꢆ - ⁰ꢆ᧥ꢆꢇꢘ
᧥ꢆ - ꢅꢆ “ ꢚҲ ” ꢇꢘ
ꢛꢗꢜꢜꢇꢌ (G-S)
V
V
= 480 V, I = 35 A,
181
−
g
DS
GS
D
= 10 V
Q
Q
gs
gd
(Ỉ 4)
69
−
ESR
ꢅꢆꢉꢝ, f = 1 MHz
1.4
−
ꢢꢝꢁ
t
ොꢓꢞꢟꢠꢡ
ොꢓ⛺ԧꢠꢡ
͓ꢢꢞꢟꢠꢡ
͓ꢢ⛻ꢣꢠꢡ
V
= 300 V, I = 35 A,
−
−
−
−
34
120
105
73
78
ns
ns
ns
ns
d(on)
DD
G
D
R
= 4.7 ꢀ
t
r
250
220
155
(Ỉ 4)
t
d(off)
t
f
⃯ꢣ-⁰ꢣꢤꢣ
ٱ
ꢁ I
ꢅꢆ - ⁰ꢆꢅꢆ
ٱ
ᣠꢎꢔױ
ঽꢇἡ ꢅꢆ - ⁰ꢆꢅꢆ
ٱ
ᣠꢎꢔױ
ꢂꢇἡ ꢅꢆ - ⁰ꢆꢅꢆ
ٱ
ꢔױ
ꢇꢁ ֭
ױ
ቂꢄꢠꢡ −
−
−
−
−
−
−
35
105
1.4
−
A
A
S
I
SM
V
SD
V
V
= 0 V, I = 35 A
−
V
GS
SD
t
= 0 V, I = 35 A,
614
16.3
ns
ꢁ C
rr
GS
F
SD
dI /dt = 100 A/ꢁ s
Q
֭
ױ
ቂꢄꢇꢘ −
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢑᚡᝧ)
ꢀꢁꢀꢂꢃꢄ，“ꢇꢤꢥሇ”ጸꢦꢔꢕꢖŔꢧꢨꢕꢩꢪꢫꢘ⛻Ŕ
ڡ
ሇ்ꢑᝐ。ꢒई⛽
ꢫꢘ⛻ꢬꢭ，ڡ
ሇ்ꢙ்⛾“ꢇꢤꢥሇ”ጸꢦ ꢔꢨꢕሇ்ꢑᝐ⛽⛰ೄ。
4. ͘५ꢥሇꢮꢯ⛺ꢰꢱꢈ࿅ꢉꢈႆ
www.onsemi.cn
3
FCH35N60
ꢛꢜꢁ
200
100
200
100
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
150°C
−55°C
25°C
10
1
1
*Notes:
*Notes:
1. 250 ꢁ s Pulse Test
1. V = 20 V
DS
2. T = 25°C
2. 250 ꢁ s Pulse Test
C
0.3
4
5
6
7
8
9
1
10
20
0.1
V
GS
, Gate−Source Voltage [V]
ࣞ
2. Āᩣꢁ V
DS
, Drain−Source Voltage [V]
ࣞ
1. ꢟԚিꢁ 500
100
0.24
0.20
0.16
150°C
25°C
0.12
0.08
0.04
10
V
GS
= 10 V
V
= 20 V
GS
*Notes:
1. V = 0 V
2. 250 ꢁ s Pulse Test
GS
*Note: T = 25°C
C
1
0.2 0.4
0.8
1.2
1.6
0
25
50
75
100
125
V
SD
, Body Diode Forward Voltage [V]
I , Drain Current [A]
D
ࣞ
3. ꢟꢀℋָӶꢍ⃯ꢣꢀἡ٬᧥ꢣ
ꢀիŔꢝߋ
ࣞ
4. ijꢤꢣٱ
ᵃױ
ꢀիָӶꢍ⁰ꢣꢀἡ٬
ꢁႆŔꢝ
ߋ
50000
10000
10
8
V
DS
V
DS
V
DS
= 100 V
= 250 V
= 400 V
C
iss
6
1000
100
10
C
oss
4
2
0
*Notes:
1. V = 0 V
GS
2. f = 1 MHz
C
C
C
= C + C (C = shorted)
gs gd ds
ds
= C
gd
iss
oss
rss
= C + C
gd
C
*Note: I = 35 A
rss
D
0.1
1
10
100
600
0
40
80
120
160
V
DS
, Drain−Source Voltage [V]
ࣞ
5. ꢀꢁ Q , Total Gate Charge [nC]
G
ࣞ
6. ᧥ꢣꢀ็ꢁ www.onsemi.cn
4
FCH35N60
ꢛꢜꢁ(ᖅ⛺ꢲ)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
3.0
2.5
2.0
1.5
1.0
0.5
0.0
*Notes:
*Notes:
1. V = 10 V
1. V = 0 V
GS
GS
2. I = 17.5 A
2. I = 250 ꢁ A
D
D
−100 −50
0
50
100
150
200
−100 −50
0
50
100
150
200
T , Junction Temperature [°C]
J
T , Junction Temperature [°C]
J
ࣞ
7. ϛՏꢀիָӶꢍꢁႆŔꢝߋ
ࣞ
8. ꢟꢀℋָӶꢍꢁႆŔꢝߋ
300
100
40
30
20
10
0
10 ꢁ s
100 ꢁ s
1 ms
10
1
10 ms
Operation in This Area
DC
is Limited by R
DS(on)
*Notes:
0.1
0.01
1. T = 25°C
C
J
2. T = 150°C
3. Single Pulse
1
10
100
1000
50
75
100
125
150
25
T , Case Temperature [°C]
C
V
DS
, Drain−Source Voltage [V]
ࣞ
9. ꢃꢄ൩͈࿅ļԚ ࣞ
10. ꢃꢄ⃯ꢣꢀἡꢍꢥꢁŔꢝߋ
0.6
0.5
0.1
0.2
0.1
0.05
P
DM
t
1
0.02
t
2
0.01
0.01
*Notes:
1. Z (t) = 0.4°C/W Max.
Single Pulse
ꢂ
JC
2. Duty Factor, D = t /t
1
ꢂ
JC
2
3. T − T = P * Z (t)
JM
C
DM
0.001
5
3
1
4
2
10−
10−
10−
1
10−
10−
10
t , Rectangular Pulse Duration [sec]
1
ࣞ
11. ɼꢡ⋍ꢦꢂꢧএ www.onsemi.cn
5
FCH35N60
V
GS
R
Q
Q
L
g
VDS
V
GS
Q
gs
gd
DUT
1 mA
Charge
ࣞ
12. ᧥ꢣꢀ็ἫᚥꢀᢿꢍỂꢨ R
L
V
DS
GS
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
d(on)
t
r
t
f
t
on
t
off
ࣞ
13. ℋꢁꢢꢝἫᚥꢀᢿꢍỂꢨ L
2
1
2
EAS
+
LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
ࣞ
14. ∮٭
ꢋꢩꢁꢢꢝἫᚥꢀᢿꢍỂꢨ www.onsemi.cn
6
FCH35N60
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
ࣞ
15. ꢪꢆꢤꢣٱ
ꢫꢬdv/dt ἫᚥꢀᢿꢍỂꢨ SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.cn
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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