FCH47N60-F133 [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，47 A，70 mΩ，TO-247;
| 型号： | FCH47N60-F133 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，47 A，70 mΩ，TO-247 |
| 文件： | 总9页 (文件大小：513K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – N ṿᬣ,
SUPERFET) II
600 V, 47 A, 70 mW
FCH47N60
ᛄꢀ
www.onsemi.cn
SUPERFET MOSFET ꢀON Semiconductorꢀꢁꢂꢃꢁꢂꢃꢄ
ꢄꢅꢆꢇꢅꢈꢆꢉꢊꢇꢂꢈꢋꢌꢉꢍꢎꢂꢃꢏꢉꢊꢋꢐꢌꢍꢎ
(SJ) MOSFET ꢏꢑꢒꢓ。ꢐꢑꢅꢆ✃ꢁnᣠ෯Ӷꢊꢇᔿꢒၖᖰ
ŻԳꢓꢊრ͓ꢏꢉ、dv/dt ꢔൺȜꢋꢌꢋꢕ༉ꢉꢖ。
ࣀ
ꢗ， SUPERFET MOSFET ꢘဘꢙ
ר
რ͓ꢂꢚၴꢁ，ୢѿꢛࣀ
ᝐꢜꢝ (PFC)、ᣭҁ
ࡈ
/ ꢂǁꢂꢚ、ꢄᥟꢂꢞꢂꢚ、 ATX ꢂꢚ֪࿅✊ꢂ ꢚၴꢁ。
V
R
MAX
I MAX
D
DS
DS(ON)
600 V
70 mꢀ @ 10 V
47 A
D
ꢁ
•ꢔ650 V @ T = 150°C
J
•ꢔ͘५Ȝ R
= 58 mꢀ
DS(on)
G
•ꢔꢌꢉꢍꢎꢂꢃ (͘५ȜQ = 210 nC)
g
•ꢔꢉᣩᜨꢟꢈꢂ (͘५Ȝ C
•ꢔ100% ꢠꢡꢕ༉ꢢꢣ
•ꢔꢤ
ר
RoHS ꢥΦ = 420 pF)
oss(eff.)
S
N-CHANNEL MOSFET
• This is a Pb−Free Device
S
D
ꢂ✈
G
•ꢔ̩ïꢦָ
ࡈ
•ꢔAC-DC ꢂꢚ
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
47N60
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FCH47N60
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
April, 2020 − Rev. 3
FCH47N60CN/D
FCH47N60
MOSFET ꢃꢄ⍭ꢅꢆ(T = 25°C ꢀꢁꢀꢂꢃꢄ)
C
ꢇ ꢈꢉ
FCH47N60_F133
ꢊꢋ
V
ꢅꢆ－⁰ꢆꢇꢁ
᧥ꢆ－⁰ꢆꢇꢁ
ꢅꢆꢇἡ
600
30
V
DSS
V
GSS
I
D
47
A
ঽ (T = 25°C)
C
ঽ (T = 100°C)
29.7
141
C
I
ꢅꢆꢇἡ
ꢂ (ꢃꢄ 1)
A
mJ
A
DM
E
ꢃꢂ↺༉்Ჟ (ꢃꢄ 2)
↺༉ꢇἡ (ꢃꢄ ꢄ1)
Ოꢅ↺༉்Ჟ (ꢃꢄ 1)
ꢆꢆ
ٱ
ቂꢅ dv/dt ໐ꢇ (ꢃꢄ 3) ꢈ૧
1800
47
AS
AR
I
E
41.7
4.5
mJ
V/ns
W
AR
dv/dt
P
417
(T = 25°C)
C
D
ᡕ᪗ 25°C ៖ℝ⍭
3.33
−55 ೃ + 150
300
W/°C
°C
T , T
࿅ꢉꢊസꢋꢈႆීꢌ
J
STG
T
L
✈ꢍ⋪ᖅŔᣠ▨ჵ௪ꢈႆ，ҋꢎꢏ 1/8”，ᓡঽ 5 Ң
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(ꢐᚡᝧ)
ꢑꢇꢁᡕ᪗ᣠꢒ⍭ൺꢇጸꢓꢔꢕŔꢇීꢌ，ꢖꢗꢘ்ꢙᔿꢚ。ꢑᡕ᪗Ûĵ᪩{℠ꢇ，෦ៀẵƽᚑꢖꢗꢈ்，ꢘ்ꢙොೄꢖꢗᔿꢚ，ᅑ
ڭ
ꢘ∰ሇ。
1. Ოꢅ⍭ൺꢇ：ꢂꢉႆַ℠ꢍᣠꢒꢊꢈ。
2. I = 18 A，V = 50 V，R = 25 ꢀ，ꢋ T = 25°C。
AS
DD
G
J
3. I ≤ 48 A，di/dt ≤ 200 A/ꢁ s，V ≤ BV
，ꢋ T = 25°C。
SD
DD
DSS
J
ꢌ᎕᧧ᚖꢍꢅꢎꢏ
ꢐꢑ০ꢇ
⍆᧧
ꢌ᎕
ꢒ᎕ꢓẵ
ꢌ
ٱ
ꢔꢕꢖ
ꢗꢘ
ꢉᲟ
FCH47N60−F133
FCH47N60
TO−247
N/A
N/A
30 ꢃ̣
⋍ꢁ்
ꢇ ꢈꢉ
FCH47N60_F133
ꢊꢋ
°C/W
°C/W
°C/W
R
R
ꢊೃꢎꢏꢍꢎᣠꢒꢇ
0.3
0.24
41.7
ꢂ
JC
ꢎꢏ⛾ꢏꢍꢖ+ꢐŔꢍꢎ͘५ꢇ
ꢊೃꢑꢍꢎᣠꢒꢇ
ꢂ
JA
R
ꢂ
JA
www.onsemi.cn
2
FCH47N60
ꢀᷴꢁ(T = 25°C ꢀꢁꢀꢂꢃꢄ)
C
ꢇ ꢈꢉ
Ἣᚥꢙꢑ
ꢃꢚꢆ ꢛꢜꢆ ꢃꢄꢆ
ꢊꢋ
V
ꢝꢞꢁ
BV
ꢅꢆೃ⁰ꢆϛꢒ ꢇꢁ
600
−
−
−
−
−
V
V
I
= 0 V, I = 250 ꢁ A, T = 25°C
D C
DSS
GS
= 0 V, I = 250 ꢁ A, T = 150°C
650
0.6
GS
D
C
ꢃ
B
V
ϛꢒꢇꢁꢈႆꢓꢔ
= 250 ꢁ A, ꢈႆꢐ 25°C
−
V/°C
DSS
J
D
/
ꢃ
T
BV
ꢅ⁰ꢆ↺༉ϛꢒꢇꢁ
ꢕ᧥ꢆꢇꢁꢅꢆꢇἡ
V
GS
V
DS
V
DS
V
GS
= 0 V, I = 47 A
−
−
−
−
700
−
−
V
DS
D
I
= 600 V, V = 0 V
1
ꢁ
A
DSS
GS
= 480 V, T = 125 °C
−
10
100
C
I
᧥ꢆ - ijꢅꢇἡ
=
30 V, V = 0 V
−
nA
GSS
DS
ꢟꢁ
V
᧥ꢆꢖꢇꢇꢁ
V
GS
V
GS
V
DS
= V , I = 250 ꢁ A
3.0
−
−
5.0
0.070
−
V
ꢀ
S
GS(th)
DS
D
R
ꢅꢆ - ⁰ꢆꢗꢘොꢙꢇꢎ
ꢚ
ױ
ꢛො = 10 V, I = 23.5 A
0.058
40
DS(on)
D
g
FS
= 40 V, I = 23.5 A
−
D
ꢠꢡꢁ
C
ꢜͅꢇꢝ
V
= 25 V, V = 0 V, f = 1.0 MHz
−
−
−
−
−
5900
3200
250
8000
4200
−
pF
pF
pF
pF
pF
iss
oss
rss
oss
DS
GS
C
C
C
ꢜꢕꢇꢝ
֭
ױ
Āꢜꢇꢝ ꢜꢕꢇꢝ
V
V
= 480 V, V = 0 V, f = 1.0 MHz
160
−
DS
GS
C
ꢂꢞꢜꢕꢇꢝ
= 0 V ೃ 400 V, V = 0 V
420
−
oss(eff.)
DS
GS
ꢢꢝꢁ
t
ොꢙꢟꢠ
V
V
= 300 V, I = 47 A,
−
−
−
−
−
−
−
185
210
520
75
430
450
1100
160
270
−
ns
ns
d(on)
DD
GS
D
= 10 V, R = 25
ꢀ
G
t
r
ꢋꢙ⛺ԧ៖ꢐ
(ꢃꢄ 4)
t
͓ꢡꢟꢠ
ns
d(off)
t
f
͓ꢡ⛻ℝ៖ꢐ
ns
Q
10 V ៖Ŕ᧥ꢆꢇꢢꢣᲟ
᧥ꢆ - ⁰ꢆ᧥ꢆꢇꢢ
᧥ꢆ - ꢅꢆ“ꢤҲ” ꢇꢢ
V
DS
= 480 V, I = 47 A V = 10 V
210
38
nC
nC
nC
g(tot)
D
,
GS
(ꢃꢄ 4)
Q
gs
Q
110
−
gd
⃯ᥡ -⁰ᥡꢣᥡ
ٱ
ꢁ I
ꢅꢆ - ⁰ꢆꢆꢆ
ٱ
ᣠꢒꢚױ
ঽꢇἡ ꢅꢆ - ⁰ꢆꢆꢆ
ٱ
ᣠꢒꢚױ
ꢂꢇἡ ꢅꢆ - ⁰ꢆꢆꢆ
ٱ
ꢚױ
ꢇꢁ ֭
ױ
ቂꢅ៖ꢐ −
−
−
−
−
−
−
47
141
1.4
−
A
A
S
I
SM
V
SD
V
V
= 0 V, I = 47 A
−
V
GS
SD
t
rr
= 0 V, I = 47 A,
590
25
ns
ꢁ C
GS
F
SD
dI /dt = 100 A/ꢁ s
Q
֭
ױ
ቂꢅꢇꢢ −
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢐᚡᝧ)
ꢀꢁꢀꢂꢃꢄ，“ꢇꢥꢦሇ”ጸꢧꢓꢔꢕŔꢨꢩꢔꢪꢫꢬꢗ⛻Ŕ
ڡ
ሇ்ꢐꢔ。ꢑई⛽
ꢬꢗ⛻ꢭꢮ，ڡ
ሇ்ꢘ்⛾“ꢇꢥꢦሇ”ጸꢧ ꢓꢩꢔሇ்ꢐꢔ⛽⛰ೄ。
4. ꢯ͖ꢨꢰꢱꢍ࿅ꢉꢈႆ。
www.onsemi.cn
3
FCH47N60
ꢛꢜꢁ்ꢤ
V
GS
Top:
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
2
10
2
10
150°C
1
0
10
10
Bottom: 5.5 V
1
0
25°C
10
10
−55°C
*Notes:
1. 250 ꢁs Pulse Test
*Notes:
2. T = 25°C
1. V = 40 V
C
DS
2. 250 ꢁs Pulse Test
1
−1
0
10
10
10
6
8
10
2
4
GS
V
, Drain−Source Voltage [V]
V
, Gate−Source Voltage [V]
DS
ꢥ 1. ꢟԚিꢁ
ꢥ 2. Āᩣꢁ
0.20
2
10
10
10
0.15
0.10
V
= 10 V
GS
1
0
V
= 20 V
GS
150°C
0.05
0.00
*Notes:
25°C
1. V = 0 V
GS
2. 250 ꢁs Pulse Test
*Note: T = 25°C
J
0
20 40 60 80 100 120 140 160 180 200
0.2
0.4
0.6
V
0.8
1.0
1.2
1.4
1.6
I , Drain Current [A]
D
, Source−Drain Voltage {V]
SD
ꢥ 3. ꢟꢀℋָӶꢍ⃯ᥡꢀἡ
٬
᧥ᥡꢀիŔꢝߋ
ꢥ 4. ijꢣᥡ
ٱ
ᵃױ
ꢀիָӶꢍ⁰ꢀἡ٬
ꢁႆŔꢝߋ
30000
12
C
C
C
= C + C (C = shorted
V
= 100 V
iss
gs
gd ds
DS
= C + C
25000
20000
15000
10000
oss
rss
ds
gd
10
8
V
= 250 V
DS
= C
gd
V
= 400 V
DS
C
oss
*Notes:
1. VGS = 0 V
2. f = 1 MHz
6
C
iss
4
C
rss
5000
0
2
0
*Note: I = 47 A
D
0
1
−1
10
10
10
0
50
100
150
200
250
V
, Drain−Source Voltage [V]
DS
Q , Total Gate Charge [nC]
G
ꢥ 5. ꢀꢁ
ꢥ 6. ᧥ᥡꢀ็ꢁ
www.onsemi.cn
4
FCH47N60
ꢛꢜꢁ்ꢤ(ᖅ⛺ꢲ)
3.0
1.2
1.1
1.0
0.9
2.5
2.0
1.5
1.0
0.5
*Notes:
1. V = 0 V
*Notes:
1. V = 10 V
GS
GS
2. I = 250 ꢁA
D
2. I = 47 A
D
0.8
0.0
−100
0
50
100
−100
−50
150
200
0
50
100
150
200
−50
T , Junction Temperature [°C]
J
T , Junction Temperature [°C]
J
ꢥ 7. ϛՏꢀիָӶꢥꢍꢁႆŔꢝ
ߋ
ꢥ 8. ꢟꢀℋָӶꢍꢁႆŔꢝ
ߋ
50
40
Operation in This Area is
Limited by R
DS(on)
2
10
100 ꢁs
1 ms
10 ms
1
0
10
10
30
20
10
DC
*Notes:
1. T = 25°C
C
−1
10
2. T = 150°C
J
3. Single Pulse
−2
10
10
0
0
1
2
3
10
10
10
75
T , Case Temperature [°C]
150
50
100
125
25
V
, Drain−Source Voltage [V]
DS
C
ꢥ 9. ൩͈࿅ļԚ
ꢥ 10. ꢃꢄ⃯ᥡꢀἡꢍꢦꢁŔꢝ
ߋ
D = 0.5
*Notes:
−1
10
1. Z (t) = 0.3°C/W Max.
ꢂ
JC
0.2
0.1
2. Duty Factor, D = t /t
1
2
3. T − T = P
* Z (t)
ꢂ
JC
JM
C
DM
PDM
0.05
0.02
0.01
t1
t2
−2
10
single pulse
−3
−2
−1
0
1
−5
−4
10
10
10
10
10
10
10
t ，ꢳꢴꢂᓡঽ៖ꢐ [Ң]
1
ꢥ 11. ɼꢡ⋍ꢧꢂꢨএ
www.onsemi.cn
5
FCH47N60
V
GS
R
Q
g
L
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= ꢶᲟ
Charge
ꢥ 12. ᧥ᥡꢀ็ἫᚥꢀᢿꢍỂꢩ
R
L
V
V
DS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
GS
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
ꢥ 13. ℋꢁꢢꢝἫᚥꢀᢿꢍỂꢩ
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
ꢥ 14. ∮
٭
ꢋꢀꢪꢢꢝἫᚥꢀᢿꢍỂꢩ www.onsemi.cn
6
FCH47N60
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
ꢥ 15. ꢣᥡ
ٱ
ꢫꢬdv/dt ꢭꢆἫᚥꢀᢿꢍỂꢩ SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
www.onsemi.cn
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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