FCP104N60 [ONSEMI]
N 沟道 SuperFET® II MOSFET;
| 型号： | FCP104N60 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 SuperFET® II MOSFET 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：817K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
2014 年9 月
FCP104N60
®
N 沟道SuperFET II MOSFET
600 V, 37 A, 104 mΩ
特性
•
描述
SuperFET® II MOSFET 是飞兆半导体利用电荷平衡技术实现出
色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ)
MOSFET 系列产品。这项先进技术专用于最小化传导损耗，提供
卓越的开关性能，并承受极端 dv/dt 额定值和更高雪崩能量。因
此，SuperFET II MOSFET 适用于系统小型化和高效化的各种
AC-DC 功率转换。
650 V @ TJ = 150°C
• 典型值RDS(on) = 96 mΩ
• 超低栅极电荷（典型值Qg = 63 nC)
• 低有效输出电容（典型值Coss(eff.)=280 pF）
•
100% 经过雪崩测试
• 符合RoHS 标准
应用
• 通信/ 服务器电源
• 工业电源
D
G
G
D
S
TO-220
S
绝对最大额定值 TC = 25°C 除非另有说明。
FCP104N60
600
±20
符号
参数
单位
VDSS
VGSS
V
漏极－源极电压
栅极－源极电压
- DC
V
A
- AC
(f > 1 Hz)
±30
37
- 连续(TC = 25°C)
- 连续(TC = 100°C)
- 脉冲
ID
漏极电流
24
IDM
EAS
IAR
111
A
mJ
A
漏极电流
( 注1)
809
6.8
单脉冲雪崩能量
雪崩电流
（注2）
（注1）
（注1）
EAR
3.57
100
20
mJ
重复雪崩能量
MOSFET dv/dt
dv/dt
PD
V/ns
二极管恢复dv/dt 峰值
（注3）
(TC = 25°C)
357
2.85
Ω
W/°C
°C
功耗
- 高于25°C 的功耗系数
TJ, TSTG
TL
工作和存储温度范围
-55 至+150
300
°C
用于焊接的最大引脚温度，距离外壳1/8”，持续5 秒
热性能
FCP104N60
符号
RθJC
参数
结至外壳热阻最大值
单位
0.35
40
°C/W
RθJA
结至环境热阻最大值
www.fairchildsemi.com
1
© 2014 飞兆半导体公司
FCP104N60 Rev. C0
封装标识与定购信息
器件编号
顶标
FCP104N60
封装
包装方法
塑料管
卷尺寸
带宽
数量
FCP104N60
TO-220
N/A
N/A
50 个
电气特性TC = 25°C 除非另有说明。
符号
关断特性
BVDSS
参数
测试条件
最小值 典型值 最大值
单位
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
600
650
-
-
-
-
V
V
漏极－源极击穿电压
ΔBVDSS
/ ΔTJ
击穿电压温度系数
-
0.67
-
V/°C
ID = 10 mA, 参考25°C 数值
VDS = 600 V, VGS = 0 V
-
-
-
-
1.98
-
1
-
IDSS
IGSS
μA
零栅极电压漏极电流
栅极－体漏电流
VDS = 480 V, VGS = 0 V,TC = 125°C
VGS = ±20 V, VDS = 0 V
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 18.5 A
VDS = 20 V, ID = 18.5 A
2.5
-
3.5
104
-
V
mΩ
S
栅极阈值电压
-
-
96
33
漏极至源极静态导通电阻
正向跨导
动态特性
Ciss
-
-
-
-
-
-
-
-
3130
75
4165
pF
pF
pF
pF
nC
nC
nC
Ω
输入电容
VDS = 380 V, VGS = 0 V,
f = 1 MHz
Coss
100
输出电容
Crss
3.66
280
63
-
-
反向传输电容
Coss(eff.)
Qg(tot)
Qgs
有效输出电容
VDS = 0 V 至480 V, VGS = 0 V
82
-
10 V 电压的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
等效串联电阻
VDS = 380 V, ID = 18.5 A,
14
V
GS = 10 V
（注4）
Qgd
15
-
ESR
f = 1 MHz
0.97
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
26
18
72
3.3
62
46
ns
ns
ns
ns
导通延迟时间
导通上升时间
关断延迟时间
关断下降时间
VDD = 380 V, ID = 18.5 A,
V
GS = 10 V, RG = 4.7 Ω
154
17
（注4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
37
114
1.2
-
A
A
漏极- 源极二极管最大正向连续电流
ISM
VSD
trr
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
VGS = 0 V, ISD = 18.5 A
-
V
414
8.8
ns
μC
VGS = 0 V, ISD = 18.5 A,
dIF/dt = 100 A/μs
Qrr
注：
-
反向恢复电荷
1. 重复额定值：脉冲宽度受限于最大结温。
2. I = 6.8 A, R = 25 Ω, 开始于T = 25°C
AS
G
J
3. I ≤ 18.5 A, di/dt ≤ 200 A/μs, V ≤ 380 V, 开始于T = 25°C
SD
DD
J
4. 典型特性本质上独立于工作温度。
© 2014 飞兆半导体公司
FCP104N60 Rev. C0
www.fairchildsemi.com
2
典型性能特征
图1. 导通区域特性
图2. 传输特性
200
100
10
1
*Notes:
1. VDS = 10V
VGS = 10.0V
8.0V
6.0V
5.5V
5.0V
4.5V
4.0V
100
10
1
2. 250μs Pulse Test
150oC
25oC
-55oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
2
3
4
5
6
7
0.3
1
10
20
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源极电流
和温度的关系
200
100
0.24
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
10
0.20
0.16
150oC
1
25oC
0.1
VGS = 10V
0.12
0.01
0.001
VGS = 20V
0.08
0.0
0.3
0.6
0.9
1.2
1.5
0
20
40
60
80
100
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图5. 电容特性
图6. 栅极电荷特性
10
20000
*Note: ID = 18.5A
VDS = 120V
10000
1000
100
10
Ciss
8
VDS = 300V
VDS = 480V
6
Coss
4
*Note:
1. VGS = 0V
2. f = 1MHz
2
1
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
Crss
oss
rss
= C
gd
0
0.1
0
14
28
42
56
70
0.1
1
10
100
600
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
© 2014 飞兆半导体公司
FCP104N60 Rev. C0
www.fairchildsemi.com
3
典型性能特性（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
1.2
2.5
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 10mA
1.1
2. ID = 18.5A
2.0
1.5
1.0
0.5
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与壳温的关系
300
40
10μs
100
100μs
30
20
10
0
10
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
1
0.1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
100
0.01
1
10
1000
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. Eoss 与漏源极电压的关系
20
16
12
8
4
0
0
120
240
360
480
600
VDS, Drain to Source Voltage [V]
© 2014 飞兆半导体公司
FCP104N60 Rev. C0
www.fairchildsemi.com
4
典型特性 （接上页）
图12. 瞬态热响应曲线
1
0.1
0.5
0.2
0.1
PDM
0.05
t1
t2
0.02
0.01
0.01
*Notes:
1. ZθJC(t) = 0.35oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
1
10
© 2014 飞兆半导体公司
FCP104N60 Rev. C0
5
www.fairchildsemi.com
图13. 栅极电荷测试电路与波形
I
= ??
G
图14. 阻性开关测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图15. 非箝位电感开关测试电路与波形
VGS
© 2014 飞兆半导体公司
FCP104N60 Rev. C0
www.fairchildsemi.com
6
图16. 二极管恢复dv/dt 峰值测试电路与波形
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
© 2014 飞兆半导体公司
FCP104N60 Rev. C0
www.fairchildsemi.com
7
3.89
3.60
0.36
10.360
10.109
A
M
B A
C
8.89
6.86
B
2.860
2.660
1.41
1.17
6.477
6.121
7°
3°
12.878
12.190
15.215
14.757
15.97
15.89
8.787
8.587
5°
3°
5°
3°
3
1
1
3
2.755
2.555
13.894
12.941
1.650
1.250
3.962
3.505
(SEE NOTE E)
1.91
0.889
0.787
M
0.36
C B
0.457
0.357
2.640
2.440
5.180
4.980
NOTES:
5°
3°
5°
3°
A. PACKAGE REFERENCE: JEDEC TO220
VARIATION AB
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
4.672
4.472
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. MAX WIDTH FOR F102 DEVICE = 1.35mm.
F. DRAWING FILE NAME: TO220T03REV4.
G. FAIRCHILD SEMICONDUCTOR.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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