FCPF190N60 [ONSEMI]

功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，20.2 A，199 mΩ，TO-220F;


型号：	FCPF190N60
厂家：	ONSEMI
描述：	功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，20.2 A，199 mΩ，TO-220F 局域网开关脉冲晶体管
文件：	总11页 (文件大小：888K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Is Now Part of

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2014 年2 月

FCP190N60 / FCPF190N60

N 沟道SuperFET II MOSFET

600 V, 20.2 A, 199 m

特性

•

说明

SuperFET^®II MOSFET 是飞兆半导体新一代利用电荷平衡技术

实现出色低导通电阻和更低栅极电荷性能的高压超级结 (SJ)

MOSFET 系列产品。这项技术专用于最小化导通损耗并提供卓越

的开关性能、dv/dt 额定值和更高雪崩能量。因此，SuperFET

MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务

器/ 电信电源、平板电视电源、ATX 电源及工业电源应用。

650 V @ T_J= 150°C

• 典型值R_DS(on)= 170 m

• 超低栅极电荷（典型值Q_g= 57 nC)

• 低有效输出电容（典型值C_oss(eff.)= 160 pF)

•

100% 经过雪崩测试

• 符合RoHS 标准

应用

•

LCD / LED / PDP 电视照明

• 太阳能逆变器

AC-DC 电源

•

TO-220F

TO-220

绝对最大额定值 T_C= 25°C 除非另有说明。

FCP190N60 FCPF190N60

符号

V_DSS

参数

单位

600

±20

±30

漏极－源极电压

栅极－源极电压

- DC

- AC

V_GSS

I_D

(f > 1 Hz)

- 连续(T_C= 25°C)

- 连续(T_C= 100°C)

- 脉冲

20.2

12.7

60.6

20.2*

12.7*

60.6*

漏极电流

I_DM

E_AS

I_AR

（注1）

（注2）

（注1）

漏极电流

400

4.0

2.1

100

单脉冲雪崩能量

雪崩电流

E_AR

重复雪崩能量

MOSFET dv/dt

二极管恢复dv/dt 峰值

dv/dt

P_D

V/ns

（注3）

(T_C= 25°C)

208

W/°C

°C

功耗

- 降低至25°C 以上

1.67

0.31

T_J, T_STG

T_L

-55 至+150

工作和存储温度范围

300

°C

用于焊接的最大引线温度，距离外壳1/8"，持续5 秒

* 漏极电流受限于最大结温

热性能

FCP190N60 FCPF190N60

符号

参数

单位

R_JC

R_JA

0.6

3.2

结至外壳热阻最大值

结至环境热阻最大值

°C/W

62.5

www.fairchildsemi.com

FCP190N60 / FCPF190N60 Rev. C16

封装标识与定购信息

器件编号

顶标

封装

包装方法

塑料管

卷尺寸

不适用

带宽

数量

50 个

FCP190N60

TO-220

不适用

FCPF190N60

TO-220F

塑料管

电气特性^T_C= 25°C 除非另有说明。

符号

参数

测试条件

最小值典型值最大值

单位

关断特性

V_GS= 0 V, I_D= 10 mA, T_J= 25°C

V_GS= 0 V, I_D= 10 mA, T_J= 150°C

600

650

BV_DSS

漏极－源极击穿电压

BV_DSS

/ T_J

BV_DS

I_DSS

I_GSS

击穿电压温度系数

I_D=10 mA，参考条件为25°C

0.67

V/°C

V_GS= 0 V, I_D= 20 A

700

漏极- 源极雪崩击穿电压

零栅极电压漏极电流

栅极- 体漏电流

V_DS= 480 V, V_GS= 0 V

A

V_DS= 480 V, T_C= 125°C

V_GS= ±20 V, V_DS= 0 V

±100

导通特性

V_GS(th)

R_DS(on)

g_FS

V_GS= V_DS, I_D= 250 A

V_GS= 10 V, I_D= 10 A

V_DS= 20 V, I_D= 10 A

2.5

3.5

0.199



栅极阈值电压

0.17

漏极至源极静态导通电阻

正向跨导

动态特性

C_iss

2220

1630

2950



输入电容

V_DS= 25 V, V_GS= 0 V

f = 1 MHz

C_oss

C_rss

2165

输出电容

128

反向传输电容

输出电容

C_oss

C_oss(eff.)

Q_g(tot)

Q_gs

V_DS= 380 V, V_GS= 0 V, f = 1 MHz

V_DS= 0 V to 480 V, V_GS= 0 V

160

有效输出电容

10 V 的栅极电荷总量

栅极- 源极栅极电荷

栅极- 漏极“ 米勒” 电荷

等效串联电阻

_DS= 380 V, I_D= 10 A,

_GS= 10 V

（注4）

Q_gd

ESR

f = 1 MHz

开关特性

t_d(on)

t_r

t_d(off)

t_f

导通延迟时间

开通上升时间

关断延迟时间

关断下降时间

V_DD= 380 V, I_D= 10 A,

_GS= 10 V, R_G= 4.7 

138

（注4）

漏极- 源极二极管特性

I_S

20.2

60.6

1.2

漏极- 源极二极管最大正向连续电流

漏极- 源极二极管最大正向脉冲电流

漏极- 源极二极管正向电压

反向恢复时间

I_SM

V_SD

t_rr

V_GS= 0 V, I_SD= 10 A

280

3.8

C

V_GS= 0 V, I_SD= 10 A,

dI_F/dt = 100 A/s

Q_rr

反向恢复电荷

注意：

1. 重复额定值：脉冲宽度受限于最大结温。

2. I = 4 A，V = 50 V，R = 25 ，启动T = 25°C。

3. I  10 A，di/dt  200 A/s，V  BV

，启动T = 25°C。

DSS

4. 本质上独立于工作温度的典型特性。

www.fairchildsemi.com

FCP190N60 / FCPF190N60 Rev. C16

典型性能特征

图1. 通态区域特性

图2. 传递特性

100

V_GS= 15.0V

*Notes:

1. V_DS= 20V

10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

2. 250s Pulse Test

150^oC

25^oC

-55^oC

*Notes:

1. 250s Pulse Test

2. T_C= 25^oC

0.3

0.1

V_DS, Drain to Source Voltage[V]

V_GS, Gate to Source Voltage[V]

图3. 导通电阻变化与漏极电流和栅极电压

图4.体二极管正向电压变化与源极电流和温度

0.5

100

0.4

150^oC

25^oC

0.3

V_GS= 10V

0.2

V_GS= 20V

*Notes:

1. V_GS= 0V

*Note: T_C= 25^oC

2. 250s Pulse Test

0.2

0.1

0.4

0.6

0.8

1.0

1.2

1.4

V_SD, Body Diode Forward Voltage [V]

I_D, Drain Current [A]

图5. 电容特性

图6. 栅极电荷特性

10000

C_iss

V_DS= 120V

V_DS= 300V

V_DS= 480V

1000

C_oss

100

*Note:

1. V_GS= 0V

2. f = 1MHz

C_rss

= C + C (C = shorted)

gs gd ds

iss

= C + C

oss

rss

= C

*Note: I_D= 10A

0.5

0.1

100

600

Q_g, Total Gate Charge [nC]

V_DS, Drain to Source Voltage [V]

www.fairchildsemi.com

FCP190N60 / FCPF190N60 Rev. C16

典型性能特征（接上页）

图7. 击穿电压变化与温度的关系

图8. 导通电阻变化与温度的关系

1.2

3.0

2.5

2.0

1.5

1.0

1.1

1.0

0.9

*Notes:

1. V_GS= 0V

*Notes:

1. V_GS= 10V

0.5

2. I_D= 10mA

2. I_D= 10A

0.8

-100

0.0

-100

-50

100

150

200

-50

100

150

200

T_J, Junction Temperature [^oC]

图9. 最大安全工作区(FCP190N60)

图10. 最大安全操作区(FCPF190N60)

100

10s

100s

1ms

10ms

100s

1ms

10ms

Operation in This Area

is Limited by R _DS(on)

Operation in This Area

is Limited by R _DS(on)

*Notes:

1. T_C= 25^oC

2. T_J= 150^oC

*Notes:

1. T_C= 25^oC

2. T_J= 150^oC

0.1

0.01

0.1

0.01

3. Single Pulse

0.1

100

1000

0.1

100

1000

V_DS, Drain to Source Voltage [V]

图11. 最大漏极电流与壳体温度的关系

图12. Eoss 与漏极－源极电压的关系

100

125

150

100

200

300

400

500

600

T_C, Case Temperature [^oC]

V_DS, Drain to Source Voltage [V]

www.fairchildsemi.com

FCP190N60 / FCPF190N60 Rev. C16

典型性能特征（接上页）

图13. 瞬态热响应曲线(FCP190N60)

0.5

0.2

P_DM

0.1

t₁

t₂

0.05

*Notes:

0.02

1. Z_JC(t) = 0.6^oC/W Max.

2. Duty Factor, D= t₁/t₂

3. T_JM- T_C= P_DM* Z_JC(t)

0.01

Single pulse

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

Rectangular Pulse Duration [sec]

t₁，矩形脉冲持续时间[ 秒]

图14. 瞬态热响应曲线(FCPF190N60)

0.5

0.2

0.1

P_DM

0.05

t₁

t₂

0.1

0.02

0.01

*Notes:

1. Z_JC(t) = 3.2^oC/W Max.

2. Duty Factor, D= t₁/t₂

3. T_JM- T_C= P_DM* Z_JC(t)

Single pulse

0.01

10^-5

10^-4

10^-3

10^-2

10^-1

100

Rectangular Pulse Duration [sec]

t₁，矩形脉冲持续时间[ 秒]

www.fairchildsemi.com

FCP190N60 / FCPF190N60 Rev. C16

= 常量

图15. 栅极电荷测试电路与波形

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

DUT

10V

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

图16. 阻性开关测试电路与波形

V_GS

图17. 非箝位感性开关测试电路与波形

www.fairchildsemi.com

FCP190N60 / FCPF190N60 Rev. C16

DUT

V_DS

I _SD

Driver

R_G

Same Type

as DUT

V_DD

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

I_FM, Body Diode Forward Current

I _SD

di/dt

( DUT )

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_SD

V_DS

( DUT )

V_DD

Body Diode

Forward Voltage Drop

图18. 二极管恢复dv/dt 峰值测试电路与波形

www.fairchildsemi.com

FCP190N60 / FCPF190N60 Rev. C16

SUPPLIER "B" PACKAGE

SHAPE

ꢀꢁꢂꢂ

3.50

10.67

9.65

SUPPLIER "A" PACKAGE

SHAPE

3.40

2.50

16.30

13.90

IF PRESENT, SEE NOTE "D"

16.51

15.42

9.40

8.13

4.10

2.70

[2.46]

14.04

12.70

2.13

2.06

FRONT VIEWS

4.70

4.00

1.62

1.42

1.62

1.10

2.67

2.40

"A1"

8.65

7.59

1.00

0.55

SEE NOTE "F"

ꢃ

ꢄ

ꢃ

ꢄ

6.69

6.06

OPTIONAL

CHAMFER

14.30

11.50

NOTE "I"

BOTTOM VIEW

NOTES:

A) REFERENCE JEDEC, TO-220, VARIATION AB

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS COMMON TO ALL PACKAGE

SUPPLIERS EXCEPT WHERE NOTED [ ].

D) LOCATION OF MOLDED FEATURE MAY VARY

(LOWER LEFT CORNER, LOWER CENTER

AND CENTER OF THE PACKAGE)

E DOES NOT COMPLY JEDEC STANDARD VALUE.

F) "A1" DIMENSIONS AS BELOW:

SINGLE GAUGE = 0.51 - 0.61

DUAL GAUGE = 1.10 - 1.45

G) DRAWING FILE NAME: TO220B03REV9

PRESENCE IS SUPPLIER DEPENDENT

I) SUPPLIER DEPENDENT MOLD LOCKING HOLES

IN HEATSINK.

0.60

0.36

2.85

2.10

BACK VIEW

SIDE VIEW

10.36

9.96

2.66

2.42

3.28

3.08

7.00

3.40

3.20

0.70

SEE NOTE "F"

6.88

6.48

1 X 45°

16.07

15.67

16.00

15.60

(3.23)

1.47

1.24

2.96

2.56

2.14

0.90

0.70

0.50

10.05

9.45

30°

0.45

0.25

0.60

0.45

2.54

4.90

4.50

NOTES:

A. EXCEPT WHERE NOTED CONFORMS TO

EIAJ SC91A.

DOES NOT COMPLY EIAJ STD. VALUE.

C. ALL DIMENSIONS ARE IN MILLIMETERS.

D. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

E. DIMENSION AND TOLERANCE AS PER ASME

Y14.5-1994.

F. OPTION 1 - WITH SUPPORT PIN HOLE.

OPTION 2 - NO SUPPORT PIN HOLE.

G. DRAWING FILE NAME: TO220M03REV5

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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FCPF190N60 [ONSEMI]

相关型号：

FCPF190N60-F154

FCPF190N60E

FCPF190N60E

FCPF190N60E-F154

FCPF190N60E_F152

FCPF190N60E_F152

FCPF190N60_F152

FCPF190N60_F152

FCPF190N65FL1

FCPF190N65FL1-F154

FCPF190N65S3L1

FCPF190N65S3R0L