FDB15N50 [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，500 V，15 A，380 mΩ，D2PAK;
| 型号： | FDB15N50 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，500 V，15 A，380 mΩ，D2PAK PC 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：628K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2013
FDB15N50
N-Channel UniFETTM MOSFET
500 V, 15 A, 380 mΩ
Description
Features
UniFETTM MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and
DMOS technology. This MOSFET is tailored to reduce
on-state resistance, and to provide better switching
performance and higher avalanche energy strength. This
device family is suitable for switching power converter
applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp
ballasts.
• Low gate charge Qg results in simple drive requirement
(Typ. 33 nC)
• Improved Gate, avalanche and high reapplied dv/dt
ruggedness
• Reduced RDS(on) ( 330mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A)
• Reduced Miller capacitance and low Input capacitance
(Typ. Crss = 16 pF)
• Improved switching speed with low EMI
• 175oC rated junction temperature
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
D
G
G
D2-PAK
S
S
o
Absolute Maximum Ratings T = 25 C unless otherwise noted.
C
Symbol
Parameter
Drain to Source Voltage
FDB15N50
500
Unit
V
V
DSS
V
Gate to Source Voltage
±30
V
GS
Drain Current
Continuous (T = 25 C, V = 10V)
o
15
A
C
GS
I
o
D
Continuous (T = 100 C, V = 10V)
C
GS
11
60
A
A
Pulsed
(Note 1)
Power dissipation
Derate above 25 C
300
2
W
W/ C
P
o
o
D
o
T , T
Operating and Storage Temperature
Soldering Temperature for 10 seconds
-55 to 175
C
J
STG
o
300 (1.6mm from case)
C
Thermal Characteristics
Symbol
Parameter
FDB15N50
0.50
Unit
o
R
R
Thermal Resistance Junction to Case, Max.
Thermal Resistance Junction to Ambient, Max.
C/W
θJC
o
62
C/W
θJA
1
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDB15N50
FDB15N50
D2-PAK
330 mm
24 mm
800 units
Electrical Characteristics T = 25°C unless otherwise noted.
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Statics
B
Drain to Source Breakdown Voltage
I
= 250µA, V = 0V
500
-
-
-
-
V
VDSS
D
GS
o
Reference to 25 C,
ID = 1mA
∆B
/∆T Breakdown Voltage Temp. Coefficient
0.58
V/°C
VDSS
J
R
Drain to Source On-Resistance
V
V
V
V
V
= 10V, I = 7.5A
-
0.33
0.38
4.0
Ω
DS(ON)
GS
DS
DS
GS
GS
D
V
Gate Threshold Voltage
= V , I = 250µA
2.0
3.4
V
GS(th)
GS
D
o
= 500V
T
T
= 25 C
-
-
-
-
-
-
25
C
C
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
nA
DSS
o
= 0V
= 150 C
250
±100
I
= ±30V
GSS
Dynamics
g
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Rise Time
V
= 10V, I = 7.5A
10
-
-
33
7.2
12
9
-
S
fs
DD
D
Q
41
10
16
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
g(TOT)
V
V
= 10V,
= 400V,
= 15A
GS
Q
Q
-
gs
gd
DS
I
D
-
t
-
d(ON)
V
I
= 250V,
= 15A,
= 6.2Ω,
= 17Ω
DD
t
-
5.4
26
5
-
-
-
-
-
-
r
D
R
R
t
Turn-Off Delay Time
Fall Time
-
G
D
d(OFF)
t
-
f
C
Input Capacitance
-
1850
230
16
ISS
V
= 25V, V = 0V,
GS
DS
C
Output Capacitance
Reverse Transfer Capacitance
-
OSS
RSS
f = 1MHz
C
-
Avalanche Characteristics
E
760
-
-
-
-
mJ
A
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
AS
AR
I
15
Drain-Source Diode Characteristics
Continuous Source Current
(Body Diode)
D
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
-
-
-
-
15
60
A
A
S
G
Pulsed Source Current
(Body Diode)
I
SM
(Note 1)
V
Source to Drain Diode Voltage
I
I
I
= 15A
-
-
-
0.86
470
5
1.2
730
6.6
V
SD
SD
SD
SD
t
Reverse Recovery Time
= 15A, di /dt = 100A/µs
ns
µC
rr
SD
Q
Reverse Recovered Charge
= 15A, di /dt = 100A/µs
RR
SD
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature.
2: Starting T = 25°C, L = 7.0mH, I = 15A.
J
AS
2
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
Typical Characteristics
100
o
100
10
1
o
T
= 25 C
T
V
= 175
C
J
J
V
DESCENDING
DESCENDING
GS
GS
10V
6V
5.5V
5V
4.5V
4V
10V
6.5V
6V
5.5V
5V
4.5V
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
1
10
100
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
60
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
VDD = 100V
50
40
30
20
10
0
TJ = 175oC
TJ = 25oC
V
= 10V, I = 7.5A
D
GS
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperature
4000
1000
15
CISS
ID = 15A
12
9
100V
250V
COSS
400V
6
100
CRSS
3
VGS = 0V, f = 1MHz
0
10
1
10
100
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source
Voltage
Figure 6. Gate Charge Waveforms For Constant
Gate Current
3
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
Typical Characteristics
30
25
20
100
10
TC = 25oC
100µs
1ms
15
TJ = 175oC
TJ = 25oC
10ms
DC
10
5
1.0
0.1
OPERATION IN THIS AREA
LIMITED BY RDS(ON)
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
1000
VSD, SOURCE TO DRAIN VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Body Diode Forward Voltage vs Body
Diode Current
Figure 8. Maximum Safe Operating Area
16
12
8
50
If R = 0
AV
If R ≠ 0
t
= (L)(I )/(1.3*RATED BV
- V
DD
)
AS
DSS
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AV
AS
10
o
STARTING T = 25 C
J
4
o
STARTING T = 150 C
J
0
25
1
0.01
50
75
100
125
150
175
0.1
1
10
50
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Maximum Drain Current vs Case
Temperature
Figure 10. Unclamped Inductive Switching
Capability
0
10
0.50
0.20
t
1
-1
10
0.10
0.05
P
D
t
2
DUTY FACTOR, D = t / t
1
2
0.02
PEAK T = (P
D
X Z
X R
) + T
JC C
J
θ
JC
θ
0.01
SINGLE PULSE
-2
10
-5
-4
-3
-2
-1
10
0
1
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
Figure 11. Normalized Transient Thermal Impedance, Junction to Case
4
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
Test Circuits and Waveforms
V
BV
DSS
DS
t
P
V
DS
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
0
AS
0.01Ω
t
AV
Figure 12. Unclamped Energy Test Circuit
Figure 13. Unclamped Energy Waveforms
V
DS
V
Q
V
DD
g(TOT)
R
L
V
= 10V
GS
DS
V
GS
+
-
V
DD
V
GS
V
= 1V
DUT
GS
0
I
g(REF)
Q
g(TH)
Q
Q
gd
gs
I
g(REF)
0
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge Waveforms
V
t
t
DS
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
R
L
r
V
DS
90%
90%
+
-
V
GS
V
DD
10%
10%
0
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
10%
V
GS
0
Figure 16. Switching Time Test Circuit
Figure 17. Switching Time Waveform
5
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
Mechanical Dimensions
2
Figure 18. TO263 (D PAK), Molded, 2-Lead, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
6
©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
www.fairchildsemi.com
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intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
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MotionMax™
Dual Cool™
®
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Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
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ESBC™
®
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SMART START™
®
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®
®
SPM
Fairchild
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SuperSOT™-3
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®
®
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®
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OPTOPLANAR
FACT
FAST
®
®
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®
®
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Datasheet contains the design specifications for product development. Specifications
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
7
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©2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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