FDB8832-F085 [ONSEMI]
30 V、80 A、1.5 mΩ、D2PAK、逻辑电平N 沟道 PowerTrench®;
| 型号： | FDB8832-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 30 V、80 A、1.5 mΩ、D2PAK、逻辑电平N 沟道 PowerTrench® |
| 文件： | 总8页 (文件大小：496K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDB8832-F085
®
N-Channel Logic Level PowerTrench MOSFET
30V, 80A, 2.1mΩ
Features
Applications
Typ rDS(on) = 1.5mΩ at VGS = 5V, ID = 80A
12V Automotive Load Control
Typ Qg(5) = 100nC at VGS = 5V
Low Miller Charge
Starter / Alternator Systems
Electronic Power Steering Systems
ABS
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
DC-DC Converters
RoHS Compliant
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
Publication Order Number:
FDB8832-F085/D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
V
VGS
±20
V
Drain Current Continuous (TC < 165oC, VGS = 10V)
Drain Current Continuous (TC < 163oC, VGS = 5V)
Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W)
Pulsed
80
80
ID
A
34
See Figure 4
1246
EAS
PD
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/oC
oC
Power Dissipation
Derate above 25oC
300
2
TJ, TSTG Operating and Storage Temperature
-55 to +175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
0.5
62
43
oC/W
oC/W
oC/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient, lin2 copper pad area
(Note 2)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
800 units
FDB8832
FDB8832-F085
TO-263AB
330mm
24mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
30
-
-
-
-
-
-
V
1
VDS = 24V
IDSS
µA
nA
VGS = 0V
TJ = 150°C
-
250
±100
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250µA
1.0
1.6
1.4
1.5
1.6
3.0
1.9
2.1
2.2
V
ID = 80A, VGS = 10V
-
-
-
ID = 80A, VGS = 5V
rDS(on)
Drain to Source On Resistance
ID = 80A, VGS = 4.5V
mΩ
ID = 80A, VGS = 10V
TJ = 175°C
-
2.3
3.0
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
-
-
-
-
-
-
-
-
-
-
11400
2140
1260
1.2
-
pF
pF
pF
Ω
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
-
VGS = 0.5V, f = 1MHz
VGS = 0 to 10V
-
265
130
14.2
-
Qg(TOT) Total Gate Charge at 10V
204
100
10.9
33
nC
nC
nC
nC
nC
nC
Qg(5)
Qg(TH)
Qgs
Total Gate Charge at 5V
VGS = 0 to 5V
VDD = 15V
ID = 80A
Threshold Gate Charge
VGS = 0 to 1V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Ig = 1.0mA
Qgs2
Qgd
22
-
43
-
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2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t(on)
td(on)
tr
Turn-On Time
-
-
-
-
-
-
-
155
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
24
73
54
38
-
-
-
V
DD = 15V, ID = 80A
VGS = 5V, RGS = 1.5Ω
td(off)
tf
-
-
toff
149
Drain-Source Diode Characteristics
ISD = 75A
-
-
-
-
0.8
0.8
59
1.25
1.0
77
V
V
VSD
Source to Drain Diode Voltage
ISD = 40A
trr
Reverse Recovery Time
Reverse Recovery Charge
IF = 75A, di/dt = 100A/µs
IF = 75A, di/dt = 100A/µs
ns
nC
Qrr
67
87
Notes:
o
1: Starting T = 25 C, L = 0.61mH, I = 64A, V = 30V, V = 10V.
J
AS
DD
GS
2: Pulse width = 100s.
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3
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
350
300
250
200
150
100
50
CURRENT LIMITED
BY PACKAGE
VGS = 10V
VGS = 5V
0
25
0
25
50
75
100
125
150
175
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
SINGLE PULSE
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
TC = 25oC
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
100
10
175 - TC
I = I25
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
Typical Characteristics
4000
1000
500
100
If R = 0
= (L)(I )/(1.3*RATED BV
10us
t
AV
- V
)
AS
DSS
DD
If R
≠ 0
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
100us
100
STARTING TJ = 25oC
10
LIMITED
BY PACKAGE
10
1
STARTING TJ = 150oC
1ms
1
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
= MAX RATED
10ms
DC
o
T
C
= 25 C
0.1
60
1
10
5000
1000
0.01
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
tAV, TIME IN AVALANCHE (ms)
Figure 6. Unclamped Inductive Switching
Figure 5. Forward Bias Safe Operating Area
Capability
200
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V
VDD = 5V
150
100
50
150
TJ = 175oC
TJ = 25oC
VGS = 3.5V
VGS = 3V
100
50
0
TJ = -55oC
0
0
1
2
3
4
0.0
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
4
3
2
1
0
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
TJ = 175oC
TJ = 25oC
ID = 80A
GS = 10V
V
-80
-40
0
40
80
120
160
200
2
4
6
8
10
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics
1.10
1.05
1.00
0.95
0.90
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
ID = 250µA
VGS = VDS
ID = 250µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
40000
ID = 80A
Ciss
8
10000
VDD = 12V
VDD = 15V
Coss
6
VDD = 18V
4
Crss
1000
2
0
f = 1MHz
VGS = 0V
100
0.1
0
50
100
150
200
250
1
10
50
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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