FDC3535 [ONSEMI]
-80V P 沟道 PowerTrench® MOSFET;
| 型号： | FDC3535 |
| 厂家： | 
ONSEMI |
| 描述： | -80V P 沟道 PowerTrench® MOSFET |
| 文件： | 总7页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDC3535
P-Channel Power Trench® MOSFET
-80 V, -2.1 A, 183 mΩ
Features
General Description
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
High performance trench technology for extremely low rDS(on)
This P-Channel MOSFET is produced using ON
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on)
,
switching performance and
ruggedness.
High power and current handling capability in a widely used
surface mount package
Applications
Fast switching speed
100% UIL Tested
RoHS Compliant
Load Switch
Synchronous Rectifier
S
S
4
G
3
D
D
D
D
D
D
5
6
2
1
G
D
Pin 1
D
SuperSOTTM -6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
-80
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±20
-2.1
-10
(Note 1a)
ID
A
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
37
mJ
W
1.6
Power Dissipation
0.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
30
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
.535
FDC3535
SSOT-6
7 ’’
8 mm
3000 units
1
©2010 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
FDC3535/D
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
I
D = -250 μA, VGS = 0 V
-80
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
DS = -64 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
-64
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
-1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
V
GS = VDS, ID = -250 μA
-1
-1.6
5
-3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
mV/°C
V
V
V
GS = -10 V, ID = -2.1 A
147
176
246
6.3
183
233
307
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
GS = -4.5 V, ID = -1.9 A
mΩ
GS = -10 V, ID = -2.1 A, TJ = 125 °C
VDD = -10 V, ID = -2.1 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
659
49
880
65
pF
pF
pF
Ω
VDS = -40 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
24
40
5.7
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6.5
3.1
23
13
10
38
10
20
10
ns
ns
VDD = -40 V, ID = -2.1 A,
V
GS = -10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
2.9
14
ns
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to -10 V
VGS = 0 V to -4.5 V
nC
nC
nC
nC
Qg(TOT)
6.8
1.6
2.7
VDD = -40 V
D = -2.1 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
GS = 0 V, IS = -2.1 A
(Note 2)
-0.81
25
-1.3
40
V
ns
nC
IF = -2.1 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
23
38
NOTES:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
R
is guaranteed by design while R
is determined by the user's board design.
θJC
θCA
b.175 °C/W when mounted on
a minimum pad of 2 oz copper
a. 78 °C/W when mounted on
a 1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
o
3. Starting T = 25 C, L = 3 mH, I = -5 A, V = -80 V, V = -10 V.
J
AS
DD
GS
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2
Typical Characteristics TJ = 25 °C unless otherwise noted
10
4
3
2
1
0
V
= -4.5 V
V
= -10 V
GS
GS
VGS = -2.5 V
VGS = -3 V
V
GS
= -3.5 V
8
6
4
2
0
VGS = -3.5 V
V
= -3 V
GS
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = -10 V
VGS = -4.5 V
V
GS
= -2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0
2
4
6
8
10
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
600
500
400
300
200
100
2.0
1.8
ID = - 2.1 A
GS = -10 V
PULSE DURATION = 80 μs
ID = -2.1 A
V
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
0.4
TJ = 125 oC
TJ = 25 oC
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
10
20
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
8
6
4
2
0
VDS = -5 V
1
0.1
TJ = 150 oC
TJ = 25 oC
TJ = 150 oC
TJ = 25 o
C
TJ = -55 oC
0.01
TJ = -55 oC
3
0.001
1
2
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
1000
100
10
ID = -2.1 A
Ciss
8
VDD = -40 V
6
VDD = -50 V
VDD = -30 V
4
2
0
Coss
Crss
f = 1 MHz
= 0 V
V
GS
0
3
6
9
12
15
0.1
1
10
100
Q , GATE CHARGE (nC)
g
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
7
6
TJ = 25 o
C
VGS = -10 V
5
4
3
2
TJ = 100 o
C
VGS = -4.5 V
TJ = 125 o
C
R
θJA = 78 oC/W
1
0.01
25
50
75
100
125
150
0.1
1
10
TC, Ambient TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
1000
20
10
SINGLE PULSE
RθJA = 175 oC/W
100 us
VGS = -10 V
T
A = 25 o
C
100
10
1 ms
1
10 ms
100 ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
SINGLE PULSE
T
= MAX RATED
J
1 s
o
R
= 175 C/W
θJA
10 s
DC
1
o
0.01
0.005
T
= 25 C
A
0.5
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
1
10
100 1000
0.1
1
10
100
300
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 175 oC/W
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
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5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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