FDC610PZ [ONSEMI]
P 沟道，PowerTrench® MOSFET，-30V，-4.9A，42mΩ;
| 型号： | FDC610PZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-30V，-4.9A，42mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：593K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDC610PZ
P-Channel PowerTrench® MOSFET
–30V, –4.9A, 42mΩ
General Description
Features
This P-Channel MOSFET is produced using ON
Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A
Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A
Low gate charge (17nC typical).
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications:
load switching and power management, battery charging
circuits, and DC/DC conversion.
High performance trench technology for extremely low rDS(on).
SuperSOTTM –6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
Application
RoHS Compliant
DC - DC Conversion
S
D
D
D
G
D
6
5
4
1
2
D
D
G
D
S
3
3
D
Pin 1
SuperSOTTM -6
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
–30
±25
V
V
(Note 1a)
–4.9
ID
A
–20
Power Dissipation
(Note 1a)
(Note 1b)
1.6
PD
W
Power Dissipation
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
78
°C/W
156
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8mm
Quantity
.610Z
FDC610PZ
SSOT6
7’’
3000units
1
©2007 Semiconductor Components Industries, LLC.
October-2017, Rev.2
Publication Order Number:
FDC610PZ/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250µA, VGS = 0V
D = –250µA, referenced to 25°C
–30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
–22
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = –24V, VGS = 0V
VGS = ±25V, VDS = 0V
–1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250µA
–1
–2.2
6
–3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250µA, referenced to 25°C
mV/°C
V
GS = –10V, ID = –4.9A
36
58
50
15
42
75
60
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = –4.5V, ID = –3.7A
mΩ
VGS = –10V, ID = –4.9A, TJ = 125°C
VDD = –10V, ID = –4.9A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
755
145
125
13
1005
195
pF
pF
pF
Ω
V
DS = –15V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
190
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
7
4
14
10
53
37
24
13
ns
ns
VDD = –15V, ID = –4.9A
VGS = –10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
33
23
17
9
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to –10V
nC
nC
nC
nC
Qg
VGS = 0V to –4.5V
V
DD = –15V,
ID = –4.9A
Qgs
Qgd
2.9
4.3
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
–1.3
–1.2
35
A
V
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.3A (Note 2)
–0.8
19
9
Reverse Recovery Time
IF = –4.9A, di/dt = 100A/µs
Reverse Recovery Charge
ns
nC
Qrr
18
Notes:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a. 78°C/W when mounted on a
1 in pad of 2 oz copper.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
20
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -3.5V
VGS = -10V
15
VGS = -4V
VGS = -5V
VGS = -4.5V
10
VGS = -4.5V
VGS = -4V
VGS = -5V
5
VGS = -3.5V
VGS = -10V
0
0
1
2
3
4
0
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
200
ID = -4.9A
GS = -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = -4.9A
V
1.4
1.2
1.0
0.8
0.6
150
100
50
TJ = 125oC
TJ = 25oC
0
-75 -50 -25
0
25 50 75 100 125 150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
20
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 0V
15 VDD = -5V
1
TJ = 150oC
10
0.1
TJ = 150oC
TJ = 25oC
5
0.01
1E-3
TJ = 25oC
TJ = -55oC
TJ = -55oC
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
2000
1000
ID = -4.9A
Ciss
8
VDD = -10V
VDD = -15V
6
Coss
VDD = -20V
4
Crss
2
0
100
50
f = 1MHz
= 0V
V
GS
0
4
8
12
16
20
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
105
30
10
104
VDS = 0V
100us
1ms
103
102
1
0.1
TJ = 150oC
101
10ms
100ms
1s
SINGLE PULSE
TJ = MAX RATED
100
R
θJA = 156oC/W
10-1
TA = 25oC
TJ = 25oC
10s
DC
10-2
10-3
THIS AREA IS
LIMITED BY r
DS(on)
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
-VGS, GATE TO SOURCE VOLTAGE (V)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Gate Leakage Current vs Gate to
Source Voltage
Figure10. Forward Bias Safe
Operating Area
1000
VGS = -10V
SINGLE PULSE
RθJA = 156oC/W
T
A = 25oC
100
10
1
0.5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
102
103
Figure 11. Single Pulse Maximum Power Dissipation
www.onsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
D = 0.5
1
0.2
0.1
P
0.05
0.02
0.01
DM
0.1
t
1
t
2
0.01
1E-3
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
SINGLE PULSE
RθJA = 156oC/W
DM
θJA
θJA A
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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