FDC6305N [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，2.7A，80mΩ;
| 型号： | FDC6305N |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，2.7A，80mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual, N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
20 V
0.08 W @ 4.5 V
0.12 W @ 2.5 V
2.7 A
2.5 V Specified
FDC6305N
D2
S1
D1
General Description
These N−Channel low threshold 2.5 V specified MOSFETs are
produced using onsemi’s advanced POWERTRENCH process that
has been especially tailored to minimize on−state resistance and yet
maintain low gate charge for superior switching performance.
G2
S2
G1
TSOT23 6−Lead
SUPERSOT−6
CASE 419BL
Features
• N−Channel 2.7 A, 20 V
MARKING DIAGRAM
R
R
= 0.08 W @ V = 4.5 V
GS
DS(ON)
= 0.12 W @ V = 2.5 V
DS(ON)
GS
• Fast Switching Speed
305 MG
• Low Gate Charge (3.5 nC Typical)
G
• High Performance Trench Technology for Extremely Low R
DS(ON)
1
• SUPERSOTt−6 Package: Small Footprint (72% Smaller than
Standard SO−8); Low Profile (1 mm Thick)
• This is a Pb−Free Device
305 = Specific Device Code
M
= Assembly Operation Month
G
= Pb−Free Package
(Note: Microdot may be in either location)
Applications
• DC/DC Converter
• Load Switch
• Motor Driving
PINOUT
4
5
3
2
1
6
ORDERING INFORMATION
†
Device
FDC6305N
Package
Shipping
3000 /
Tape & Reel
TSOT−23−6
(Pb−free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2022 − Rev. 3
FDC6305N/D
FDC6305N
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
V
V
Drain−Source Voltage
Gate−Source Voltage
Drain Current
20
DSS
GSS
V
8
V
I
D
− Continuous (Note 1a)
2.7
A
− Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
8
0.96
A
P
Power Dissipation
W
W
W
°C
D
0.9
0.7
T , T
Operating and Storage Junction Temperature Range
−55 to +150
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RqJA
Parameter
Ratings
130
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1a)
Thermal Resistance, Junction−to−Case (Note 1)
RqJC
60
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
20
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA,Referenced to 25°C
−
14
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 16 V, V = 0 V
−
−
−
−
−
−
1
mA
nA
nA
DSS
GS
I
= 8 V, V = 0 V
100
–100
GSSF
GSSR
DS
I
= –8 V, V = 0 V
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
0.4
0.9
1.5
V
GS(th)
DS
GS
D
Gate Threshold Voltage
Temperature Coefficient
= 250 mA, Referenced to 25°C
−
–2.7
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source
On–Resistance
V
GS
V
GS
V
GS
= 4.5 V, I = 2.7 A
−
−
−
0.060
0.095
0.085
0.080
0.128
0.120
W
DS(on)
D
= 4.5 V, I = 2.7 A, T = 125°C
D
J
= 2.5 V, I = 2.2 A
D
I
On−State Drain Current
V
GS
V
DS
= 4.5 V, V = 5 V
6
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 5 V, I = 2.7 A
−
8
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 10 V, V = 0 V, f = 1.0 MHz
−
−
−
310
80
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
40
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 10 V, I = 1 A,
−
−
−
−
−
−
−
5
8.5
11
15
17
20
10
5
ns
ns
d(on)
DD
GS
D
= 4.5 V, R
= 6 W
GEN
t
r
t
ns
d(off)
t
f
3
ns
Q
V
DS
= 10 V, I = 2.7 A, V = 4.5 V
3.5
0.55
0.95
nC
nC
nC
g
D
GS
Q
−
gs
gd
Q
−
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2
FDC6305N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued)
Symbol
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = 0.8 A (Note 2)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
−
−
−
0.8
1.2
A
V
S
V
SD
V
GS
0.77
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design. Both devices are
q
q
JC
CA
assumed to be operating and sharing the dissipated heat energy equally.
a. 130°C/W when mounted
b. 140°C/W when mounted
c. 180°C/W on a minimum
mounting pad.
2
2
on a 0.125 in pad of 2 oz.
on a 0.005 in pad of 2 oz.
copper.
copper.
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
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3
FDC6305N
TYPICAL CHARACTERISTICS
10
8
1.6
V
GS
= 4.5 V
3.5 V
3.0 V
2.5 V
V
GS
= 2.5 V
1.4
1.2
1
6
3.0 V
3.5 V
2.0 V
4
4.0 V
4.5 V
2
1.5 V
1.5
0.8
0
0
0
2
4
6
8
10
0.5
1
2
2.5
3
I , Drain Current (A)
D
V
DS
, Drain to Source Voltage (V)
Figure 2. On−Resistance Variation with
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
1.6
1.4
1.2
1
0.24
0.2
I
V
= 2.7 A
D
I
= 1.4 A
D
= 4.5 V
GS
0.16
0.12
0.08
0.04
0
T = 125°C
A
T = 25°C
A
0.8
0.6
−50 −25
0
25
50
75 100 125 150
1
2
3
4
5
T , Junction Temperature (°C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
10
8
10
1
V
GS
= 0 V
V
DS
= 5 V
T = −55°C
A
25°C
125°C
T = 125°C
A
6
0.1
25°C
4
0.01
0.001
−55°C
2
0.0001
0
0
0.2
V
0.4
0.6
0.8
1
1.2 1.4
0
1
2
3
4
V
, Gate to Source Voltage (V)
, Body Diode Forward Voltage (V)
GS
SD
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
www.onsemi.com
4
FDC6305N
TYPICAL CHARACTERISTICS (continued)
5
4
3
2
1
0
500
f = 1 MHz
= 0 V
I
D
= 2.7 A
V
= 5 V
DS
V
GS
400
300
200
100
0
10 V
C
ISS
15 V
C
OSS
C
RSS
0
0.5
1
1.5
2
2.5
3
3.5
4
0
4
8
12
16
20
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
5
10
1
100 ms
R
LIMIT
SINGLE PULSE
DS(ON)
R
= 180°C/W
q
JA
4
3
2
1
0
T = 25°C
A
1 ms
10 ms
100 ms
1 s
0.1
V
GS
= 4.5 V
SINGLE PULSE
= 180°C/W
DC
R
q
JA
T = 25°C
A
0.01
100
0.1
1
10
0.01
0.1
1
10
100
1000
V
DS
, Drain−Source Voltage (V)
Single Pulse Time (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
R
R
(t) = r(t) * R
q
JA
= 180°C/W
q
q
JA
JA
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
SINGLE PULSE
t2
T − T = P * R (t)
Duty Cycle, D = t / t
q
JA
J
A
1
2
0.01
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
0
300
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
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5
FDC6305N
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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