FDC6326L [ONSEMI]
集成式负载开关;
| 型号： | FDC6326L |
| 厂家： | 
ONSEMI |
| 描述： | 集成式负载开关 开关 PC 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总6页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Integrated Load Switch
FDC6326L
Description
This device is particularly suited for compact power management
in portable electronic equipment where 3 V to 20 V input and 1.8 A
output current capability are needed. This load switch integrates
a small N−Channel power MOSFET (Q1) which drives a large
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TM
P−Channel power MOSFET (Q2) in one tiny SUPERSOT −6
package.
Features
• V
• V
= 0.20 V @ V = 12 V, I = 1.5 A, R
= 0.125 W
DROP
DROP
IN
L
DS(on)
TSOT−23−6
CASE 419BL
= 0.20 V @ V = 5 V, I = 1 A, R = 0.20 W
DS(on)
IN
L
• SUPERSOT−6 Package Design Using Copper Lead Frame for
Superior Thermal and Electrical Capabilities
MARKING DIAGRAM
• This is a Pb−Free and Halide Free Device
&E&Y
&.326&G
V
,R1
4
5
3
2
V
, C1
OUT
IN
Q2
&E
&Y
&.
326
&G
= Designates Space
= Binary Calendar Year Coding Scheme
= Pin One Dot
= Specific Device Code
= Date Code
ON/OFF
R1, C1
V
OUT
, C1
Q1
6
R2
1
ORDERING INFORMATION
See Application Circuit (Figure 3)
†
Device
FDC6326L
Package
Shipping
Figure 1.
TSOT−23−6
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
DROP
−
+
IN
OUT
ON/OFF
Figure 2. Equivalent Circuit
© Semiconductor Components Industries, LLC, 1998
1
Publication Order Number:
June, 2021 − Rev. 5
FDC6326L/D
FDC6326L
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
A
Symbol
Parameter
Value
3−20
2.5−8
1.8
Unit
V
V
Input Voltage Range
On/Off Voltage Range
IN
ON/OFF
V
V
I
L
Load Current − Continuous (Note 1)
Load Current − Pulsed (Note 1, Note 3)
Maximum Power Dissipation (Note 2)
A
5
P
D
0.7
W
°C
kV
T , T
Operating and Storage Temperature Range
−55 to 150
6
J
STG
ESD
Electrostatic Discharge Rating MIL−STD−883D Human Body Model (100 pF/1500 W)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Case (Note 2)
Value
180
60
Unit
°C/W
°C/W
R
q
JA
R
q
JC
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
OFF CHARACTERISTICS
Forward Leakage Current
ON CHARACTERISTICS (Note 3)
Parameter
Test Conditions
Min
Typ
Max
Unit
mA
V
I
FL
V
V
= 20 V, V
= 12 V, V
= 0 V
−
−
1
IN
ON/OFF
V
Conduction Voltage Drop
= 3.3 V, I = 1.5 A
−
−
−
−
1
1
0.15
0.14
0.2
0.2
0.125
0.2
−
DROP
DS(on)
IN
ON/OFF
L
V
= 5 V, V
= 3.3 V, I = 1 A
ON/OFF L
IN
R
Q
− Static On−Resistance
V
V
V
V
= −12 V, I = −1.9 A
0.095
0.14
−
W
2
GS
D
= −5 V, I = −1.5 A
GS
D
I
L
Load Current
= 0.125 V, V = 12 V, V = 3.3 V
ON/OFF
A
DROP
DROP
IN
= 0.20 V, V = 5 V, V
= 3.3 V
−
−
IN
ON/OFF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. V = 20 V, V
= 8 V, T = 25°C
A
IN
ON/OFF
2. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
FDC6326L
Q2
IN
OUT
C1
R1
ON/OFF
Load
Ci
Q1
Co
R2
Figure 3. FDC6326L Load Switch Application
External Component Recommendation:
First select R2, 100−1 kW, for Slew Rate control.
C1 ≤ 1000 pF can be added in addition to R2 for further In−rush current control.
Then select R1 such that R1/R2 ratio maintains between 10−100. R1 is required to turn Q2 off.
For SPICE simulation, users can download a ″FDC6326L.MOD″ Spice model from ON Semiconductor Web Site at www.onsemi.com
TYPICAL CHARACTERISTICS
0.5
0.4
0.3
0.2
0.5
0.4
T = 125°C
T = 125°C
A
A
T = 25°C
A
0.3
0.2
0.1
0
T = 25°C
A
V
V
= 5 V
IN
V
V
= 12 V
IN
0.1
0
= 1.5−8 V
ON/OFF
= 1.5−8 V
ON/OFF
PW = 300 ms, D ≤ 2%
PW = 300 ms, D ≤ 2%
0
1
2
3
4
0
1
2
3
4
I
L
(A)
I
L
(A)
Figure 4. Conduction Voltage Drop
Variation with Load Current
Figure 5. Conduction Voltage Drop Variation
with Load Current
0.6
0.5
0.4
0.3
I = 1 A
L
V
= 1.5−8 V
ON/OFF
PW = 300 ms, D ≤ 2%
T = 125°C
A
0.2
0.1
0
T = 25°C
A
2
4
6
8
10
12
V
IN
(V)
Figure 6. On−Resistance Variation with Input Voltage
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3
FDC6326L
TYPICAL CHARACTERISTICS (continued)
1
D = 0.5
0.5
0.2
0.2
0.1
R
R
(t) = r(t) * R
q
JA
= See Note 2
q
q
JA
JA
0.1
0.05
0.05
P(pk)
0.02
0.01
t
1
0.02
0.01
t
2
T − T = P * R (t)
q
JA
Single Pulse
J
A
Duty Cycle, D = t /t
1
2
0.005
0.00001
0.0001
0.001
0.01
t , Time (s)
0.1
1
10
100 300
1
Figure 7. Transient Thermal Response Curve
NOTE: Thermal characterization performed on the conditions described in Note 2.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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相关型号：
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Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
FAIRCHILD
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