FDC653N [ONSEMI]
N 沟道增强型场效应晶体管，30V，5A，35mΩ;
| 型号： | FDC653N |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道增强型场效应晶体管，30V，5A，35mΩ 晶体管 场效应晶体管 |
| 文件： | 总7页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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N-Channel Enhancement
Mode Field Effect Transistor
V
DSS
R
MAX
I MAX
D
DS(ON)
30 V
ꢂ
ꢃ
ꢂ
ꢄ
ꢅ
ꢀ
@
1
0
V
5.0 A
FDC653N
0.055 ꢀ @ 4.5 V
General Description
This N−Channel enhancement mode power field effect transistor is
produced using onsemi’s proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on−state resistance. These devices are particularly suited for low
voltage applications in notebook computers, portable phones,
PCMICA cards, and other battery powered circuits where fast
switching, and low in−line power loss are needed in a very small
outline surface mount package.
S
D
D
G
D
D
TSOT23 6−Lead
SUPERSOT −6
CASE 419BL
TM
Features
MARKING DIAGRAM
• 5.0 A, 30 V
R
R
= 0.035 ꢀ @ V = 10 V
GS
DS(ON)
= 0.055 ꢀ @ V = 4.5 V
DS(ON)
GS
XXX MG
TM
• Proprietary SUPERSOT −6 Package Design Using Copper Lead
G
Frame for Superior Thermal and Electrical Capabilities.
1
• High Density Cell Design for Extremely Low R
• Exceptional On−Resistance and Maximum DC Current Capability.
• This Device is Pb−Free and Halogen Free
.
DS(ON)
XXX = Specific Device Code
M
G
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Drain−Source Voltage
Gate−Source Voltage − Continuous
Ratings
30
Unit
V
PINOUT
V
DSS
V
GSS
20
V
1
2
6
5
4
I
Drain Current
− Continuous (Note 1a)
5
A
D
− Pulsed
(Note 1a)
(Note 1b)
15
P
Maximum Power
Dissipation
1.6
0.8
W
D
T , T
Operating and Storage Temperature Range −55 to +150
°C
J
STG
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Symbol
Parameter
Ratings
Unit
R
ꢁ JA
ꢁ JC
Thermal Resistance, Junction−to−Ambient
78
°C/W
(Note 1a)
R
Thermal Resistance, Junction−to−Case
30
°C/W
(Note 1)
© Semiconductor Components Industries, LLC, 1997
1
Publication Order Number:
January, 2022 − Rev. 4
FDC653N/D
FDC653N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 ꢆ A
30
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 ꢆ A,Referenced to 25°C
−
31
mV/°C
ꢇ BVDSS
ꢇ TJ
D
I
Zero Gate Voltage Drain Current
V
DS
= 24 V, V = 0 V
−
−
−
−
1
10
ꢆ
A
DSS
GS
T = 55°C
J
I
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
V
= 20 V, V = 0 V
−
−
−
−
100
nA
nA
GSSF
GS
DS
I
= –20 V, V = 0 V
–100
GSSR
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 ꢆ A
1
1.7
2
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature
Coefficient
= 250 ꢆ A, Referenced to 25°C
−
–4.2
−
mV/°C
ꢇ VGS(th)
ꢇ TJ
D
R
Static Drain–Source On–Resistance
V
= 10 V, I = 5 A
−
−
−
0.027
0.042
0.046
0.035
0.056
0.055
ꢀ
DS(on)
GS
D
T = 125°C
J
V
GS
V
GS
V
DS
= 4.5 V, I = 4.2 A
D
I
On−State Drain Current
= 10 V, V = 5 V
8
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 5 A
−
6.2
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1.0 MHz
−
−
−
350
220
80
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
= 10 V, I = 1 A, V = 4.5 V,
GEN
−
−
−
−
−
−
−
7.5
12
13
6
15
25
25
15
17
−
ns
ns
d(on)
DD
D
GS
R
= 6 ꢀ
t
r
t
ns
d(off)
t
f
ns
Q
V
DS
= 15 V, I = 5 A, V = 10 V
12
2.1
2.6
nC
nC
nC
g
D
GS
Q
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Continuous Source Diode Current
−
−
−
1.3
A
V
S
V
SD
Drain–Source Diode Forward Voltage
V
GS
= 0 V, I = 1.3 A (Note 2)
0.75
0.6
1.2
1.0
S
T = 125°C
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
ꢁ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢁ
ꢁ
JC
CA
2
a.78°C/W when mounted on a minimum on 1 in pad of 2oz Cu in FR−4 board.
b.156°C/W when mounted on a minimum pad of 2oz Cu in FR−4 board.
2. Pulse Test: Pulse Width v300 ꢆ s, Duty cycle v2.0 %.
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2
FDC653N
TYPICAL CHARACTERISTICS
3.5
15
12
V
6.0 V
= 10 V
GS
V
GS
= 3.5 V
3
2.5
2
5.0 V
4.5 V
4.0 V
4.0 V
4.5 V
9
6
3
3.5 V
5.0 V
6.0 V
10.0 V
1.5
1.0
0.5
3.0 V
0
0
0.5
1
1.5
2
0
3
6
9
12
15
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
0.18
1.8
1.6
1.4
I
V
= 5.0 A
= 10 V
I
D
= 2 A
D
0.15
0.12
0.09
0.06
0.03
0
GS
1.2
1
T = 125°C
A
T = 25°C
A
0.8
0.6
−50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , Junction Temperature (°C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
with Temperature
15
1
15
12
V
DS
= 5 V
V
GS
= 0 V
T = 125°C
A
9
6
3
0
0.1
25°C
T = −55°C
A
0.01
−55°C
25°C
0.001
0.0001
125°C
1.5
2
2.5
3
3.5
4
4.5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDC653N
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
1000
10
8
I
D
= 5.0 A
V
DS
= 5 V
500
10 V
C
C
15 V
ISS
6
OSS
200
100
50
4
2
f = 1 MHz
C
RSS
V
GS
= 0 V
0
0
2
4
6
8
10
12
14
0.1
0.3
1
3
10
30
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
30
10
3
5
4
3
2
1
0
SINGLE PULSE
R
LIMIT
DS(ON)
100 ꢆ s
1 ms
10 ms
100 ms
1 s
DC
R
= See Note 1b
ꢁ
JA
T = 25°C
A
1
0.3
0.1
V
= 10 V
GS
SINGLE PULSE
= See Note 1b
R
0.03
0.01
ꢁ
JA
T = 25°C
A
0.1 0.2
0.5
1
2
5
10
30 50
0.01
0.1
1
10
100 300
V
DS
, Drain−Source Voltage (V)
Single Pulse Time (s)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
0.5
D = 0.5
0.2
R
R
(t) = r(t) * R
ꢁ
JA
= See Note 1b
ꢁ
ꢁ
JA
JA
0.2
0.1
0.1
0.05
t
1
0.05
0.02
t
2
0.01
Single Pulse
T − T = P * R (t)
Duty Cycle, D = t / t
0.02
0.01
ꢁ
JA
J
A
1
2
0.0001
0.001
0.1
t , Time (s)
1
10
100
300
0.01
1
Figure 11. Transient Thermal Response Curve
(Note: Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.)
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4
FDC653N
ORDERING INFORMATION
†
Device
Device Marking
.653
Package Type
Reel Size
Tape Width
Shipping
FDC653N
TSOT23 6−Lead
(Pb−free)
7”
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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