FDD26AN06A0-F085 [ONSEMI]
N 沟道,PowerTrench® MOSFET,60V,36A,26mΩ;型号: | FDD26AN06A0-F085 |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,60V,36A,26mΩ 开关 晶体管 |
文件: | 总10页 (文件大小:824K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Aug 2011
FDD26AN06A0_F085
®
N-Channel PowerTrench MOSFET
60V, 36A, 26mΩ
Applications
Features
•
•
•
•
•
•
•
Motor / Body Load Control
•
•
•
•
•
•
•
r
= 20mΩ (Typ.), V = 10V, I = 36A
DS(ON) GS D
ABS Systems
Q (tot) = 13nC (Typ.), V = 10V
g
GS
Powertrain Management
Low Miller Charge
Injection Systems
Low Q Body Diode
RR
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
DRAIN
(FLANGE)
D
GATE
G
SOURCE
S
TO-252AA
FDD SERIES
MOSFET Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
60
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
V
V
DSS
GS
20
Drain Current
o
36
A
A
Continuous (T = 25 C, V = 10V)
C
GS
o
I
Continuous (T = 100 C, V = 10V)
25
7
D
C
GS
o
o
Continuous (T
= 25 C, V = 10V, R = 52 C/W)
θJA
A
amb
GS
Pulsed
Figure 4
35
A
E
P
Single Pulse Avalanche Energy ( Note 1)
Power dissipation
mJ
W
AS
75
D
o
o
Derate above 25 C
0.5
W/ C
o
T , T
Operating and Storage Temperature
-55 to 175
C
J
STG
Thermal Characteristics
o
R
R
R
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2.0
100
52
C/W
θJC
θJA
θJA
o
C/W
2
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2011 Fairchild Semiconductor Corporation
FDD26AN06A0_F085 Rev. C1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD26AN06A0
FDD26AN06A0_F085
TO-252AA
330mm
16mm
2500 units
Electrical Characteristics T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
= 250µA, V = 0V
60
-
-
-
-
-
-
V
VDSS
D
GS
V
V
V
= 50V
= 0V
1
DS
GS
GS
I
µA
nA
DSS
GSS
o
T
= 150 C
-
250
100
C
I
= 20V
-
On Characteristics
V
Gate to Source Threshold Voltage
V
= V , I = 250µA
2
-
-
4
V
GS(TH)
GS
DS
D
I
I
= 36A, V = 10V
0.020 0.026
D
GS
r
Drain to Source On Resistance
Ω
= 36A, V = 10V,
DS(ON)
D
GS
-
0.045 0.058
o
T = 175 C
J
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
-
-
-
-
-
800
155
55
-
-
pF
pF
pF
nC
nC
nC
nC
nC
ISS
V
= 25V, V = 0V,
GS
DS
Output Capacitance
OSS
RSS
f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
-
Q
Q
Q
Q
Q
V
V
= 0V to 10V
= 0V to 2V
13
17
2.2
-
g(TOT)
g(TH)
gs
GS
1.7
4.3
2.6
4.6
GS
V
= 30V
DD
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
I = 36A
D
I = 1.0mA
g
-
gs2
-
gd
Switching Characteristics (V = 10V)
GS
t
t
t
t
t
t
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
123
ns
ns
ns
ns
ns
ns
ON
9
-
-
d(ON)
72
23
35
-
V
V
= 30V, I = 36A
r
DD
GS
D
= 10V, R = 25Ω
Turn-Off Delay Time
Fall Time
-
GS
d(OFF)
-
f
Turn-Off Time
88
OFF
Drain-Source Diode Characteristics
I
I
I
I
= 36A
= 18A
-
-
-
-
-
-
-
-
1.25
1.0
43
V
V
SD
SD
SD
SD
V
t
Source to Drain Diode Voltage
SD
Reverse Recovery Time
= 36A, dI /dt = 100A/µs
= 36A, dI /dt = 100A/µs
ns
nC
rr
SD
Q
Reverse Recovered Charge
50
RR
SD
Notes:
1: Starting T = 25°C, L = 83µH, I = 29A, V = 54V, V = 10V.
J
AS
DD
GS
©2011 Fairchild Semiconductor Corporation
FDD26AN06A0_F085 Rev. C1
Typical Characteristics T = 25°C unless otherwise noted
C
1.2
1.0
0.8
0.6
0.4
0.2
0
40
30
20
10
0
0
25
50
75
100
150
175
25
50
75
T , CASE TEMPERATURE ( C)
C
100
125
150
175
125
o
o
T
, CASE TEMPERATURE ( C)
C
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
θJC C
J
DM
θJC
0.01
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
10
10
10
Figure 3. Normalized Maximum Transient Thermal Impedance
500
o
T
= 25 C
C
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
V
= 10V
GS
100
30
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
10
10
10
Figure 4. Peak Current Capability
©2011 Fairchild Semiconductor Corporation
FDD26AN06A0_F085 Rev. C1
Typical Characteristics T = 25°C unless otherwise noted
C
1000
100
10
300
100
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
DD
)
AS
DSS
10µs
If R ≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DD
AV
AS
DSS
100µs
10ms
1ms
o
STARTING T = 25 C
J
OPERATION IN THIS
AREA MAY BE
10
LIMITED BY r
DS(ON)
DC
1
o
SINGLE PULSE
STARTING T = 150 C
J
T
= MAX RATED
J
o
T
= 25 C
C
0.1
1
0.01
0.1
1
10
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
V
t , TIME IN AVALANCHE (ms)
AV
DS
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 5. Forward Bias Safe Operating Area
100
100
PULSE DURATION = 80µs
V
= 20V
V
= 10V
DUTY CYCLE = 0.5% MAX
GS
GS
V
= 15V
DD
V
= 7V
80
60
40
20
0
GS
80
60
40
20
0
o
T
= 25 C
J
o
o
T
= -55 C
J
T
= 175 C
J
V
= 6V
o
GS
T
= 25 C
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 5V
GS
3
4
5
6
7
8
9
0
1
2
3
4
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
GS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
20.0
19.5
19.0
18.5
18.0
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
V
= 10V
GS
V
= 10V, I = 36A
GS D
0
10
20
I , DRAIN CURRENT (A)
30
40
-80
-40
0
40
80
120
160
200
o
T , JUNCTION TEMPERATURE ( C)
D
J
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDD26AN06A0_F085 Rev. C1
Typical Characteristics T = 25°C unless otherwise noted
C
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
I
= 250µA
D
V
= V , I = 250µA
DS D
GS
-80
-40
0
40
80
12
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
2000
10
V
= 30V
DD
C
= C + C
GS GD
ISS
1000
8
6
4
2
0
C
≅ C + C
DS GD
OSS
C
= C
GD
RSS
100
30
WAVEFORMS IN
DESCENDING ORDER:
I
= 36A
= 7A
D
V
= 0V, f = 1MHz
GS
I
D
0.1
1
10
60
0
2
4
6
8
10
12
14
V
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
DS
g
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2011 Fairchild Semiconductor Corporation
FDD26AN06A0_F085 Rev. C1
Test Circuits and Waveforms
V
DS
BV
DSS
t
P
L
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
V
DS
R
L
V
Q
DD
g(TOT)
V
DS
V
GS
V
= 10V
GS
V
GS
+
-
Q
gs2
V
DD
DUT
V
= 2V
GS
I
g(REF)
0
Q
g(TH)
Q
Q
gs
gd
I
g(REF)
0
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
V
DS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
R
L
t
t
f
r
V
DS
90%
90%
+
-
V
GS
V
DD
10%
10%
0
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
V
10%
GS
0
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
©2011 Fairchild Semiconductor Corporation
FDD26AN06A0_F085 Rev. C1
Thermal Resistance vs. Mounting Pad Area
The maximum rated junction temperature, T , and the
thermal resistance of the heat dissipating path determines
JM
125
100
75
R
= 33.32+ 23.84/(0.268+Area) EQ.2
= 33.32+ 154/(1.73+Area) EQ.3
θJA
the maximum allowable device power dissipation, P , in an
DM
R
application.
Therefore the application’s ambient
θJA
o
o
temperature, T ( C), and thermal resistance R
must be reviewed to ensure that T
( C/W)
A
θJA
is never exceeded.
JM
Equation 1 mathematically represents the relationship and
serves as the basis for establishing the rating of the part.
(T
– T )
A
JM
(EQ. 1)
P
= -----------------------------
50
DM
RθJA
In using surface mount devices such as the TO-252
package, the environment in which it is applied will have a
significant influence on the part’s current and maximum
25
0.01
(0.0645)
0.1
(0.645)
1
10
(6.45)
(64.5)
power dissipation ratings. Precise determination of P
complex and influenced by many factors:
is
DM
2
2
AREA, TOP COPPER AREA in (cm )
Figure 21. Thermal Resistance vs Mounting
Pad Area
1. Mounting pad area onto which the device is attached and
whether there is copper on one side or both sides of the
board.
2. The number of copper layers and the thickness of the
board.
3. The use of external heat sinks.
4. The use of thermal vias.
5. Air flow and board orientation.
6. For non steady state applications, the pulse width, the
duty cycle and the transient thermal response of the part,
the board and the environment they are in.
Fairchild provides thermal information to assist the
designer’s preliminary application evaluation. Figure 21
defines the R
for the device as a function of the top
θJA
copper (component side) area. This is for a horizontally
positioned FR-4 board with 1oz copper after 1000 seconds
of steady state power with no air flow. This graph provides
the necessary information for calculation of the steady state
junction temperature or power dissipation. Pulse
applications can be evaluated using the Fairchild device
Spice thermal model or manually utilizing the normalized
maximum transient thermal impedance curve.
Thermal resistances corresponding to other copper areas
can be obtained from Figure 21 or by calculation using
Equation 2 or 3. Equation 2 is used for copper area defined
in inches square and equation 3 is for area in centimeters
square. The area, in square inches or square centimeters is
the top copper area including the gate and source pads.
23.84
(0.268 + Area)
R
= 33.32 + ------------------------------------
(EQ. 2)
θJA
θJA
Area in Inches Squared
154
R
= 33.32 + ---------------------------------
(EQ. 3)
(1.73 + Area)
Area in Centimeters Squared
©2011 Fairchild Semiconductor Corporation
FDD26AN06A0_F085 Rev. C1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
®
®
2Cool™
FlashWriter
FPS™
*
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
The Power Franchise
AccuPower™
Auto-SPM™
AX-CAP™*
The Right Technology for Your Success™
®
®
F-PFS™
®
FRFET
®
SM
BitSiC
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
Programmable Active Droop™
TinyBoost™
TinyBuck™
TinyCalc™
®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyLogic
GTO™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
®
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
®
TranSiC
®
TriFault Detect™
TRUECURRENT *
EfficentMax™
ESBC™
MicroPak™
SMART START™
®
®
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
SPM
μSerDes™
STEALTH™
®
®
SuperFET
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild
®
UHC
®
Fairchild Semiconductor
FACT Quiet Series™
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OptiHiT™
OPTOLOGIC
®
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®
SupreMOS
FACT
FAST
®
®
OPTOPLANAR
SyncFET™
Sync-Lock™
®*
®
FastvCore™
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tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
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Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
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Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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make changes at any time without notice to improve the design.
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Rev. I55
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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