FDD306P [ONSEMI]
P 沟道 1.8V 指定 PowerTrench® MOSFET,-12V,-6.7A,28mΩ;型号: | FDD306P |
厂家: | ONSEMI |
描述: | P 沟道 1.8V 指定 PowerTrench® MOSFET,-12V,-6.7A,28mΩ 开关 脉冲 晶体管 |
文件: | 总7页 (文件大小:768K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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March 2015
FDD306P
P-Channel 1.8V Specified PowerTrench® MOSFET
Features
Applications
■ –6.7 A, –12 V.
R
R
R
= 28 mΩ @ V = –4.5 V
■ DC/DC converter
DS(ON)
DS(ON)
DS(ON)
GS
= 41 mΩ @ V = –2.5 V
GS
= 90 mΩ @ V = –1.8 V
General Description
This P-Channel 1.8V Specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. It has been opti-
mized for battery power management.
GS
■ Fast switching speed
■ High performance trench technology for extremely
low R
DS(ON)
■ High power and current handling capability
S
D
G
G
S
TO-252
D
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Symbol
Parameter
Ratings
Units
V
Drain-Source Voltage
Gate-Source Voltage
–12
V
V
A
DSS
V
8
–6.7
GSS
I
Drain Current
– Continuous
– Pulsed
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
D
–54
P
Power Dissipation for Single Operation
52
W
D
3.8
1.6
T , T
Operating and Storage Junction Temperature Range
–55 to +175
°C
J
STG
Thermal Characteristics
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
2.9
40
96
°C/W
°C/W
°C/W
θJC
θJA
θJA
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD306P
FDD306P
13’’
16mm
2500 units
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDD306P Rev. 2.2
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = –250 µA
–12
V
DSS
GS
D
∆BVDSS
Breakdown Voltage Temperature Coefficient
= –250 µA, Referenced to 25°C
–0.6
mV/°C
D
∆T
J
I
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
V
= –10 V, V = 0 V
–1
µA
DSS
DS
GS
I
=
8V, V = 0 V
100
nA
GSSF
GS
DS
On Characteristics (Note 2)
Gate Threshold Voltage
V
V
I
= V , I = –250 µA
–0.4
–0.5
2.2
–1.5
V
GS(th)
DS
GS
D
∆VGS(th)
Gate Threshold Voltage
Temperature Coefficient
= –250 µA, Referenced to 25°C
mV/°C
D
∆T
J
R
Static Drain–Source
On–Resistance
V
V
V
V
= –4.5 V, I = –6.7 A
21
29
42
25
28
41
90
mΩ
DS(on)
GS
D
= –2.5 V, I = –6.1 A
GS
GS
GS
D
= –1.8 V, I = –4.8 A
D
= –4.5 V, I = –6.7A, T = 125°C
D
J
I
On–State Drain Current
V
V
= –4.5 V, V = –5 V
–45
A
S
D(on)
GS
DS
DS
g
Forward Transconductance
= –5 V, I = –6.7 A
22
FS
D
Dynamic Characteristics
C
C
C
R
Input Capacitance
V
= –6 V, V = 0 V,
1290
590
430
4.2
pF
pF
pF
Ω
iss
oss
rss
G
DS
GS
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
= 15 mV, f = 1.0 MHz
GS
Switching Characteristics (Note 2)
t
t
t
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= –6 V, I = –1 A,
16
8
29
16
54
65
21
ns
ns
d(on)
DD
GS
D
= –4.5 V, R
= 6 Ω
GEN
r
34
41
15
2.0
4.4
ns
d(off)
f
ns
Q
Q
Q
V
V
= –6V, I = –6.7 A,
nC
nC
nC
g
DS
GS
D
= –4.5 V
gs
gd
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
I
–3.2
–1.2
A
V
S
V
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Diode Reverse Recovery Charge
V
= 0 V, I = –3.2 A
(Note 2)
(Note 3)
–0.8
37
SD
GS
S
Trr
IF = –6.7 A,
ns
A
diF/dt = 100 A/µs
Irm
0.9
17
Qrr
nC
Notes:
1.
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user's board design.
θCA
a)
R
= 40°C/W when mounted
b)
R
= 96°C/W when mounted on a
θJA
θJA
2
on a 1in pad of 2 oz copper
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where P is maximum power dissipation at T = 25°C and R
is at T
and V = 10V.
P
D
C
DS(on)
J(max) GS
D
-----------------------
R
DS(ON)
4. Starting T = 25°C, L = 3 mH, I
= -4 A,
V
= -10 V, V = -12 V.
DD
J
AS
GS
2
www.fairchildsemi.com
FDD306P Rev. 2.2
Typical Characteristics
2.5
2
54
VGS = -1.8V
-3.0V
VGS = -4.5V
-4.0V
-3.5V
45
36
27
18
9
-2.0V
-2.5V
-2.5V
1.5
1
-3.0V
-2.0V
-3.5V
-4.5V
-1.8V
0.5
0
0
9
18
27
36
45
54
0
1
2
3
4
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.3
1.2
1.1
1
0.1
0.08
0.06
0.04
0.02
0
ID = -6.7A
ID = -3.4A
V
GS = -4.5V
TA = 125°C
TA = 25°C
0.9
0.8
-50
-25
0
25
50
75
100 125 150 175
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (°C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
54
45
36
27
18
9
100
10
TA = -55°C
125°C
VGS = 0V
VDS = - 5V
25°C
1
TA = 125°C
0.1
25°C
-55°C
0.01
0.001
0.0001
0
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
www.fairchildsemi.com
FDD306P Rev. 2.2
Typical Characteristics
2400
2000
1600
1200
800
400
0
5
f = 1MHz
GS = 0 V
ID = -6.7A
V
4
VDS = -4V
-8V
3
2
1
0
Ciss
-6V
Coss
Crss
0
4
8
12
16
20
0
3
6
9
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
100
10
20
15
10
5
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
DC
1
VGS =-4.5V
SINGLE PULSE
RθJA = 96oC/W
0.1
TA = 25oC
0
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
θ θ
R JA(t) = r(t) * R
JA
0.2
RθJA = 96 °C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * R
θ
JA(t)
SINGLE PULSE
Duty Cycle, D = t1/t2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
www.fairchildsemi.com
FDD306P Rev. 2.2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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