FDD3510H [ONSEMI]
双 N 和 P 沟道 PowerTrench® MOSFET，80V;
| 型号： | FDD3510H |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道 PowerTrench® MOSFET，80V 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD3510H
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ
Features
General Description
Q1: N-Channel
These dual N and P- Channel enhancement mode Power
Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
MOSFETs are produced using ON Semiconductor’s advanced
PowerTrench® process that has been especially tailored to
minimize on -state resistance and yet maintain superior
switching performance.
Q2: P-Channel
Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
Applications
Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
100% UIL Tested
Inverter
RoHS Compliant
H-Bridge
D1
D2
D1/D2
G1
G2
G2
S2
G1
S1
S1
N-Channel
S2
Dual DPAK 4L
P-Channel
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
80
Q2
-80
±20
-9.4
-2.8
-10
32
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Continuous
V
V
±20
13.9
4.3
20
TC = 25°C
TA = 25°C
ID
A
- Pulsed
Power Dissipation for Single Operation
TC = 25°C (Note 1)
TA = 25°C (Note 1a)
TA = 25°C (Note 1b)
(Note 3)
35
PD
3.1
1.3
37
W
EAS
Single Pulse Avalanche Energy
54
mJ
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
(Note 1)
3.5
3.9
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13”
Tape Width
Quantity
2500 units
FDD3510H
FDD3510H
TO-252-4L
16mm
1
©2008 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
FDD3510H/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max
Units
Off Characteristics
ID =250µA, VGS = 0V
ID = -250µA, VGS = 0V
Q1
Q2
80
-80
BVDSS
Drain to Source Breakdown Voltage
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
Q1
Q2
84
-67
mV
/°C
µA
I
D = -250µA, referenced to 25°C
DS = 64V, VGS = 0V
VDS = -64V, VGS = 0V
V
Q1
Q2
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
-1
Q1
Q2
±100
±100
nA
nA
V
GS = ±20V, VDS = 0V
On Characteristics
V
GS = VDS, ID = 250µA
Q1
Q2
2.0
-1.0
2.6
-1.6
4.0
-3.0
VGS(th)
Gate to Source Threshold Voltage
V
VGS = VDS, ID = -250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
Q1
Q2
-6.7
4.6
mV/°C
V
V
GS = 10V, ID = 4.3A
GS = 6.0V, ID = 4.1A
64
70
121
80
88
152
Q1
Q2
VGS = 10V, ID = 4.3A, TJ = 125°C
rDS(on)
Static Drain to Source On Resistance
mΩ
VGS = -10V, ID = -2.8A
VGS = -4.5V, ID = -2.6A
VGS = -10V, ID = -2.8A, TJ = 125°C
153
184
259
190
224
322
V
V
DD = 10V, ID = 4.3A
DD = -5V, ID = -2.8A
Q1
Q2
15
6.8
gFS
Forward Transconductance
S
Dynamic Characteristics
Q1
Q2
600
660
800
880
Q1
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
VDS = 40V, VGS = 0V, f = 1MHZ
Q1
Q2
56
50
75
70
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2
VDS = -40V, VGS = 0V, f = 1MHZ
Q1
Q2
27
25
41
40
Q1
Q2
1.7
7.2
f = 1MHz
Switching Characteristics
Q1
Q2
7
6
13
11
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1
VDD = 40V, ID = 4.3A,
VGS = 10V, RGEN = 6Ω
Q1
Q2
2
3
10
10
Q1
Q2
16
25
29
40
Q2
Turn-Off Delay Time
Fall Time
ns
VDD = -40V, ID = -2.8A,
VGS = -10V, RGEN = 6Ω
Q1
Q2
2
5
10
10
ns
Q1
Q2
13
14
18
20
Qg(TOT)
Qgs
Qgd
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
nC
nC
nC
Q1
VGS = 10V, VDD = 40V, ID = 4.3A
Q1
Q2
2.3
1.9
Q2
Q1
Q2
3.2
2.9
V
GS = -10V, VDD = -40V, ID = -2.8A
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2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
VGS = 0V, IS = 2.6A
VGS = 0V, IS = -2.6A
(Note 2) Q1
(Note 2) Q2
0.8
-0.8
1.2
-1.2
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
Q1
Q2
29
30
46
48
Q1
ns
nC
IF = 4.3A, di/dt = 100A/s
Q2
IF = -2.8A, di/dt = 100A/s
Q1
Q2
28
30
45
48
Qrr
Reverse Recovery Charge
Notes:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined
θCA
θJA
θJC
by the user's board design.
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
a. 40°C/W when mounted on
a 1 in pad of 2 oz copper
Q1
2
Scale 1 : 1 on letter size paper
a. 40°C/W when mounted on
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
2
Q2
a 1 in pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting T = 25°C, N-ch: L = 3mH, I = 5A, V = 80V, V = 10V; P-ch: L = 3mH, I = -6A, V = -80V, V = -10V.
J
AS
DD
GS
AS
DD
GS
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3
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
20
15
10
5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 3.5V
VGS = 10V
VGS = 6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
VGS = 4V
PULSE DURATION = Xµs
DUTY CYCLE = X%MAX
VGS = 4.5V
VGS = 4V
VGS = 6V
VGS = 3.5V
VGS = 10V
0
0
1
2
3
4
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.2
300
ID = 4.3A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
ID = 4.3A
VGS = 10V
200
100
0
TJ = 125oC
TJ = 25oC
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
20
10
VGS = 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
15
TJ = 150oC
1
VDS = 5V
TJ = 25oC
10
0.1
TJ = 150oC
TJ = 25oC
TJ = -55oC
5
0.01
TJ = -55oC
0
0.001
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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4
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
1000
100
10
ID = 4.3A
Ciss
Coss
Crss
8
VDD = 40V
6
VDD = 30V
VDD = 50V
4
2
f = 1MHz
= 0V
V
GS
0
0
2
4
6
8
10
12
14
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
15
12
9
5
4
VGS = 10V
3
TJ = 25oC
VGS = 6V
2
6
TJ = 125oC
3
R
θJC = 3.5oC/W
0
25
1
0.01
50
75
100
125
150
0.1
1
10
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
105
50
VGS = 10V
10
1
104
103
102
10
100us
THIS AREA IS
SINGLE PULSE
RθJC = 3.5oC/W
TC = 25oC
LIMITED BY r
DS(on)
1ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.5oC/W
10ms
100ms
DC
T
C = 25oC
0.1
0.05
10-6
10-5
10-4
t, PULSE WIDTH (sec)
10-3
10-2
10-1
1
0.5
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
100
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
P
DM
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1 2
SINGLE PULSE
RθJC = 3.5oC/W
PEAK T = P
J
x Z
x R + T
C
DM
θJC
θJc
0.001
10-6
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
RθJA = 96oC/W
(Note 1b)
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 14. Transient Thermal Response Curve
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Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted
10
2.5
2.0
1.5
1.0
0.5
VGS = -4.5V
VGS = -10V
VGS = -2.5V
VGS = -3V
8
VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
6
VGS = -3.5V
4
VGS = -4.5V
VGS = -10V
VGS = -3V
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -2.5V
0
0
1
2
3
4
5
0
2
4
6
8
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 15. On- Region Characteristics
2.0
600
ID = -2.8A
1.8
PULSE DURATION = 80µs
ID = -2.8A
DUTY CYCLE = 0.5%MAX
VGS = -10V
500
400
1.6
1.4
1.2
1.0
0.8
0.6
0.4
TJ = 125oC
300
200
TJ = 25oC
100
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
Figure 17. Normalized On-Resistance
vs Junction Temperature
10
10
1
VGS = 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
8
VDS = -5V
TJ = 150oC
6
TJ = 25oC
0.1
4
TJ = 150oC
0.01
2
TJ = -55oC
TJ = 25oC
TJ = -55oC
0
0.001
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Transfer Characteristics
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
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Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
10
1000
100
10
ID = -2.8A
Ciss
8
VDD = -40V
6
VDD = -30V
VDD = -50V
Coss
4
2
f = 1MHz
= 0V
Crss
V
GS
0
0
2
4
6
8
10
12
14
16
0.1
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 22. Capacitance vs Drain
to Source Voltage
Figure 21. Gate Charge Characteristics
10
8
4
3
2
VGS = -10V
TJ = 25oC
6
VGS = -4.5V
4
TJ = 125oC
2
R
θJC = 3.9oC/W
0
25
1
0.1
50
75
100
125
150
1
10
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure 23. Unclamped Inductive
Switching Capability
Fig ure 24 . Ma xi mum C on ti n uo us D rai n
Current vs Case Temperature
20000
20
10
VGS = -10V
10000
1000
100
SINGLE PULSE
100us
o
R
= 3.9 C/W
θJC
1ms
THIS AREA IS
LIMITED BY rds(on)
1
10ms
SINGLE PULSE
TJ = MAX RATED
100ms
R
θJC = 3.9oC/W
0.1
DC
T
C = 25oC
10
0.05
10-6
10-5
10-4
t, PULSE WIDTH (s)
10-3
10-2
10-1
1
1
10
100 200
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Forward Bias Safe
Operating Area
Figure 26. Single Pulse Maximum Power
Dissipation
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Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
P
DM
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
C
SINGLE PULSE
RθJC = 3.9oC/W
J
DM
θJC
θJC
0.001
10-6
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 27. Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
t
2
θJA = 96oC/W
NOTES:
DUTY FACTOR: D = t /t
R
1
2
(Note 1b)
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 28. Transient Thermal Response Curve
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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相关型号：
FDD3570_NL
Power Field-Effect Transistor, 43A I(D), 80V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
FAIRCHILD
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