FDD3670 [ONSEMI]
N 沟道，PowerTrench® MOSFET，100V，34A，32mΩ;
| 型号： | FDD3670 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100V，34A，32mΩ 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD3670
100V N-Channel PowerTrenchÒ MOSFET
Features
General Description
· 34 A, 100 V. RDS(ON) = 32 mW @ VGS = 10 V
RDS(ON) = 35 mW @ VGS = 6 V
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
· Low gate charge (57 nC typical)
· Fast switching speed
These MOSFETs f eature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
High performance trench technology for extremely
low RDS(ON)
·
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
· High power and current handling capability
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
100
VGSS
ID
Gate-Source Voltage
V
A
±20
Drain Current – Continuous
Drain Current – Pulsed
Maximum Power Dissipation @ TC = 25°C
@ TA = 25°C
(Note 1)
(Note 3)
34
100
PD
83
W
(Note 1)
(Note 1a)
(Note 1b)
3.8
1.6
@ TA = 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
1.8
96
RqJC
°C/W
°C/W
(Note 1b)
RqJA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD3670
FDD3670
13’’
16mm
2500 units
Publication Order Number:
FDD3670/D
Ó2001 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 50 V,
ID = 7.3 A
360
7.3
mJ
A
IAR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 mA
100
V
Breakdown Voltage Temperature
Coefficient
92
DBVDSS
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 80 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
10
mA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
2
2.5
4
V
VDS = VGS, ID = 250 mA
Gate Threshold Voltage
Temperature Coefficient
–7.2
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 10 V, ID = 7.3 A, T = 125°C
VGS = 6 V,
VGS = 10 V,
VDS = 5 V,
ID = 7.3 A
22
39
24
32
56
35
mW
J
ID = 7.0 A
VDS = 5 V
ID = 7.3 A
ID(on)
gFS
On–State Drain Current
25
15
A
S
Forward Transconductance
31
Dynamic Characteristics
C
iss
Input Capacitance
2490
265
80
pF
pF
pF
VDS = 50 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
16
10
56
25
57
11
15
26
18
84
40
80
ns
ns
VDD = 50 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 W
ns
ns
Qg
nC
nC
nC
VDS = 50 V,
VGS = 10 V
ID = 7.3 A,
Qgs
Qgd
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.7 A
Voltage
2.7
1.2
A
V
VSD
(Note 2)
0.72
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJCis guaranteed by design while RqCAis determined by the user's board design.
o
o
a)
R
qJA= 40 C/W when
b) RqJA= 96 C/W on a
2
minimum mounting pad.
mounted on a 1in pad of
2oz copper.
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
2.
3.
Pulse Id refers to Figure.9 Forward Bias Safe Operation Area.
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2
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
60
5.0V
4.5V
VGS = 10V
50
5.5V
40
30
20
10
0
VGS = 4.0V
4.0V
4.5V
5.0V
5.5V
7.0V
10V
3.5V
0.8
0
10
20
30
40
50
60
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.4
2.2
0.06
ID = 7.3A
VGS = 10V
ID = 3.7A
0.05
0.04
0.03
0.02
0.01
0
2
1.8
1.6
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
175
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
50
40
30
20
10
0
VGS = 0V
VDS = 5V
10
1
TA = 125oC
25oC
0.1
o
-55oC
125 C
0.01
0.001
0.0001
25oC
TA = -55oC
0
0.2
0.4
0.6
0.8
1
1.2
2
3
4
5
6
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
10
4500
4000
3500
3000
2500
2000
1500
1000
500
ID = 7.3A
f = 1MHz
VGS = 0 V
VDS = 20V
50V
8
6
4
2
0
80V
CISS
CRSS
COSS
0
0
10
20
30
40
50
60
0
20
40
60
80
100
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
200
100
10000
SINGLE PULSE
θJC = 1.8 oC/W
TC = 25 oC
10 μs
R
10
1
100 μs
1000
THIS AREA IS
LIMITED BY r
DS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
RθJC = 1.8 oC/W
10 ms
DC
CURVE BENT TO
MEASURED DATA
C = 25 oC
100
50
T
0.1
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
P
DM
0.1
0.01
t
1
t
SINGLE PULSE
2
θJC = 1.8 oC/W
NOTES:
DUTY FACTOR: D = t /t
R
1
2
0.01
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
0.005
10-5
10-4
10-3
t, RECTANGULAR PULSE DURATION (sec)
10-2
10-1
1
Figure 11. Junction-to-Case Transient Thermal Response Curve
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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