FDD3680 [ONSEMI]
N 沟道，PowerTrench® MOSFET，100V，25A，46mΩ;
| 型号： | FDD3680 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100V，25A，46mΩ 开关 脉冲 晶体管 |
| 文件： | 总7页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
46 mW @ 10 V
25 A
100 V
D
FDD3680
G
S
General Description
DPAK3 (TO−252 3 LD)
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge
CASE 369AS
than other MOSFETs with comparable R
specifications.
MARKING DIAGRAM
DS(ON)
The result is a MOSFET that is easy and safer to drive (even at very
high frequencies), and DC/DC power supply designs with higher
overall efficiency.
$Y&Z&3&K
FDD
Features
3680
• 25 A, 100 V. R
= 46 mW @ V = 10 V
GS
= 51 mW @ V = 6 V
GS
DS(ON)
R
DS(ON)
• Low Gate Charge (38 nC Typical)
$Y
FDD3680
&Z
&3
&K
= Logo
= Device Code
= Assembly Plant Code
= 3−Digit Date Code Format
= 2−Digits Lot Run Traceability Code
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low R
• High Power and Current Handling Capability
DS(ON)
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain−Source Voltage
Ratings
Unit
V
D
V
100
+20
DSS
GSS
V
Gate−Source Voltage
Drain Current − Continuous (Note 1)
Drain Current − Pulsed
Maximum Power Dissipation (Note 1)
(Note 1a)
V
I
D
25
A
G
100
P
D
68
W
S
3.8
N−Channel
(Note 1b)
1.6
T , T
Operating and Storage Junction
Temperature Range
–55 to +175
°C
J
STG
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction−to−Case
(Note 1)
2.2
°C/W
q
JC
R
Thermal Resistance,
Junction−to−Ambient (Note 1b)
96
°C/W
q
JA
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
November, 2021 − Rev. 4
FDD3680/D
FDD3680
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE AVALANCHE RATINGS (Note 1)
W
Single Pulse Drain−Source Avalanche Energy
Maximum Drain−Source Avalanche Current
V
DD
= 50 V, I = 6.1 A
−
−
−
−
245
6.1
mJ
A
DSS
D
I
AR
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
100
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature Coefficient
= 250 mA, Referenced to 25°C
−
101
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= 80 V, V = 0 V
−
−
−
−
−
−
10
mA
nA
nA
DSS
GS
I
= 20 V, V = 0 V
100
GSSF
GSSR
DS
I
= –20 V, V = 0 V
–100
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
2
2.4
4
V
GS(th)
DS
GS
D
Gate Threshold Voltage Temperature Coefficient
= 250 mA, Referenced to 25°C
−
–6.5
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain–Source On–Resistance
V
GS
V
GS
V
GS
= 10 V, I = 6.1 A
−
−
−
32
61
34
46
92
51
mW
DS(on)
D
= 10 V, I = 6.1 A, T = 125°C
D
J
= 6 V, I = 5.8 A
D
I
On–State Drain Current
V
GS
V
DS
= 10 V, V = 5 V
25
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 5 V, I = 6.1 A
−
25
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1.0 MHz
−
−
−
1735
176
53
−
−
−
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
= 50 V, I = 1 A, V = 10 V,
GEN
−
−
−
−
−
−
−
14
8.5
63
25
17
94
34
53
−
ns
ns
d(on)
DD
D
GS
R
= 10 W
t
r
t
ns
d(off)
t
f
21
ns
Q
V
DS
= 50 V, I = 6.1 A, V = 10 V
38
nC
nC
nC
g
D
GS
Q
8.1
9.2
gs
gd
Q
−
DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = 2.9 A (Note 2)
I
−
−
−
2.9
1.3
A
V
S
V
SD
V
GS
0.73
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. R = 40°C/ W when mounted
b. R = 96°C/ W on a minimum
q
q
JA
JA
2
on a 1in pad of 2oz copper.
mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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2
FDD3680
TYPICAL CHARACTERISTICS
40
30
20
10
0
1.8
1.6
1.4
1.2
1
V
= 10 V
5 V
GS
V
GS
= 4 V
4.5 V
4.5 V
4 V
5.0 V
6.0 V
10 V
3.5 V
0.8
0
2
4
6
0
10
20
30
40
50
60
10
1.4
V
, DRAIN−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
2.6
2.2
1.8
1.4
1
0.12
I
V
= 6.1 A
= 10 V
I = 3.0 A
D
D
GS
0.08
0.04
0
T = 125°C
A
T = 25°C
A
0.6
0.2
−50 −25
0
25 50 75 100 125 150 175
2
4
6
8
T , JUNCTION TEMPERATURE (°C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
100
10
40
V
= 5 V
V
= 0 V
DS
GS
30
20
10
0
T = 125°C
A
1
125°C
25°C
25°C
−55°C
T = −55°C
A
0.1
0.01
0.001
1
2
3
4
5
6
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDD3680
10
8
3000
I
D
= 6.1 A
f = 1 MHz
= 0
V
DS
= 15 V
2500
2000
1500
1000
500
V
GS
30 V
C
C
ISS
50 V
6
4
C
RSS
2
OSS
0
0
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1000
100
10
40
SINGLE PULSE
= 96°C/W
T = 25°C
A
R
q
JA
30
20
10
0
R
LIMIT
100 ms
1 ms
10 ms
100 ms
1 s
10 s
DS(ON)
1
V
= 10 V
GS
DC
SINGLE PULSE
0.1
R
= 96°C/W
= 25°C
q
JA
T
A
0.01
0.1
1
10
100
1000
0.1
1
10
t , TIME (s)
100
1000
V
, DRAIN−SOURCE VOLTAGE (V)
DS
1
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.2
R
R
(t) = r(t) + R
= 6°C/W
q
q
q
JA
JA
JA
0.1
0.1
0.05
P(pk)
0.02
t
1
t
2
0.01
0.01
T − T = P * R (t)
q
JA
J
A
SINGLE PULSE
0.001
Duty Cycle, D = t / t
1
2
0.0001
0.001
0.01
0.1
1
10
100
1000
t , TIME (s)
1
Figure 11. Transient Thermal Response Curve
(Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.)
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4
FDD3680
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
Device
Package
DPAK3 (TO−252 3 LD)
Reel Size
Tape Width
Shipping
FDD3680
FDD3680
13”
16 mm
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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