FDD5690 [ONSEMI]
N 沟道，PowerTrench® MOSFET，60V，30A，27mΩ;
| 型号： | FDD5690 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，60V，30A，27mΩ 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD5690
60V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V
RDS(ON) = 0.032 Ω @ VGS = 6 V.
Low gate charge (23nC typical).
Fast switching speed.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
High performance trench technology for extremely
low RDS(ON)
.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
D
D
G
G
S
S
TO-252
TC=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
60
VGSS
ID
Gate-Source Voltage
V
A
±20
Maximum Drain Current -Continuous
(Note 1)
30
(Note 1a)
9
100
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
PD
(Note 1)
(Note 1a)
(Note 1b)
50
W
3.2
TA = 25oC
1.3
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to- Case
(Note 1)
2.5
40
96
RθJC
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to- Ambient
(Note 1a)
(Note 1b)
RθJA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
16mm
Quantity
FDD5690
FDD5690
13’’
2500
2002 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDD5690/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
WDSS
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
VDD = 30 V, ID = 30 A
90
30
mJ
IAR
A
V
BVDSS
Drain-Source Breakdown Voltage
60
VGS = 0 V, ID = 250 µA
Breakdown Voltage Temperature
Coefficient
57
∆BVDSS
∆TJ
ID = 250µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
V
DS = 48 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
4
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
2
2.5
-6
V
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = 250 µA,Referenced to 25°C
mV/°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9 A
0.023 0.027
0.032 0.048
0.026 0.032
Ω
V
V
V
GS = 10 V, ID = 9 A, TJ = 125°C
GS = 6 V, ID = 8 A
GS = 10 V, VDS = 5 V
ID(on)
gFS
On-State Drain Current
25
A
S
Forward Transconductance
VDS = 5 V, ID = 9 A
24
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V
f = 1.0 MHz
1110
150
75
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 30 V, ID = 1 A
10
9
18
18
39
18
32
ns
ns
V
GS = 10 V, RGEN = 6 Ω
24
10
23
4
ns
ns
Qg
VDS = 30 V, ID = 9 A
GS = 10 V,
nC
nC
nC
V
Qgs
Qgd
6.8
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.3
1.2
A
V
VSD
Drain-Source Diode Forward
Voltage
V
GS = 0 V, IS = 2.3 A
(Note 2)
0.75
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
R
θJC is guaranteed by design while RθCA is determined by the user's board design.
o
o
b) RθJA= 96 C/W on a minimum
a) RθJA= 40 C/W when mounted
2
mounting pad.
on a 1in pad of 2oz copper.
Scale
1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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2
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
60
VGS = 10V
6.0V
50
5.0V
40
VGS = 4.5V
30
4.5V
5.0V
20
10
0
4.0V
0.8
0
1
2
3
4
5
0
10
20
30
40
50
60
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.08
0.06
0.04
0.02
0
2
ID = 15A
ID = 9A
1.8
1.6
VGS = 10V
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
60
50
40
30
20
10
0
100
10
TA = -55oC
VGS = 0V
VDS = 5V
25oC
125oC
TA = 125oC
1
25oC
-55oC
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2
3
4
5
6
VSD, BODY DIODE FORWARD VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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Typical Characteristics (continued)
2500
2000
1500
1000
500
10
f = 1MHz
VGS = 0 V
ID = 9A
VDS = 10V
20V
8
CISS
30V
6
4
2
0
COSS
CRSS
0
0
10
20
30
40
50
60
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
60
40
20
0
R
DS(ON) LIMIT
100 s
µ
1ms
10ms
100ms
1S
SINGLE PULSE
RθJA = 96oC/W
T
A = 25oC
10S
1
DC
VGS = 10V
SINGLE PULSE
0.1
0.01
R JA = 96oC/W
θ
TA = 25oC
0.01
0.1
1
10
100
1000
0.1
1
10
100
SINGLE PULSE TIME (SEC)
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
R
(t) = r(t) * R
JA
θ
JA
θ
0.1
0.01
0.1
R
= 96°C/W
JA
θ
0.05
0.01
0.02
Single Pulse
P(pk)
t
1
t
2
0.001
0.0001
T - T = P * R
(t)
JA
J
A
θ
Duty Cycle, D = t / t
1
2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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