FDD6530A [ONSEMI]
N 沟道，PowerTrench® MOSFET，20V，21A，32mΩ;
| 型号： | FDD6530A |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，20V，21A，32mΩ |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD6530A
20V N-Channel PowerTrenchÒ MOSFET
Features
·
21 A, 20 V
RDS(ON) = 32 mW @ VGS = 4.5 V
RDS(ON) = 47 mW @ VGS = 2.5 V
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
·
·
·
Low gate charge (6.5 nC typical)
Fast switching
High performance trench technology for extremely
low RDS(ON)
Applications
·
DC/DC converter
.
·
Motor drives
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
20
V
V
A
VGSS
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±8
ID
(Note 3)
(Note 1a)
(Note 1)
21
100
PD
W
Power Dissipation
33
(Note 1a)
(Note 1b)
3.3
1.6
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
4.5
45
96
RqJC
RqJA
RqJA
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6530A
FDD6530A
13’’
16mm
2500 units
Ó2001 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
FDD6530A/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 10 V
55
8
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250 mA
20
V
Breakdown Voltage Temperature
Coefficient
DBVDSS
DTJ
15
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 16 V,
VGS = 8 V,
VGS = –8 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
1
mA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 250 mA
0.4
20
0.9
–3
1.2
V
Gate Threshold Voltage
Temperature Coefficient
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
VGS = 2.5 V,
VGS = 4.5 V, ID = 8 A, TJ = 125°C
ID = 8 A
ID = 6.6 A
26
36
36
32
47
48
mW
ID(on)
gFS
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
A
S
Forward Transconductance
VDS = 5 V,
ID = 8 A
21
Dynamic Characteristics
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
Ciss
Coss
Crss
Input Capacitance
710
173
84
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
7
16
14
32
8
ns
ns
18
4
ns
ns
VDS = 10 V,
VGS = 4.5 V
ID = 8 A,
Qg
Qgs
Qgd
6.5
1.3
1.9
9
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.7
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.7 A
(Note 2)
0.8
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a)
R
qJA = 45°C/W when mounted on a
b)
R
qJA = 96°C/W when mounted
1in2 pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
D
P
3. Maximum current is calculated as:
DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
www.onsemi.com
2
Typical Characteristics
30
1.8
1.6
1.4
1.2
1
VGS = 4.5V
3.0V
3.5V
24
2.5V
VGS = 2.5V
18
12
6
3.0V
3.5V
2.0V
4.0V
4.5V
0.8
0
0
6
12
18
24
30
0
1
2
3
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
1.8
1.6
1.4
1.2
1
ID = 4 A
ID = 8 A
VGS = 4.5V
0.09
TA = 125oC
0.06
TA = 25oC
0.03
0.8
0.6
0
-50
-25
0
25
50
75
100
125
150
175
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
15
VGS = 0V
VDS = 5V
TA =-55oC
25oC
125oC
10
TA = 125oC
12
9
1
25oC
0.1
-55oC
6
0.01
0.001
3
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
www.onsemi.com
3
Typical Characteristics
5
1200
1000
800
600
400
200
0
ID = 8 A
VDS = 5V
10V
f = 1MHz
VGS = 0 V
4
3
2
1
0
15V
CISS
COSS
CRSS
0
4
8
12
16
20
0
2
4
6
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
100
10
100
80
60
40
20
0
SINGLE PULSE
R
qJA = 96°C/W
TA = 25°C
100ms
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
0.1
0.01
R
qJA = 96oC/W
TA = 25oC
0.1
1
10
100
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
qJA(t) = r(t) + RqJA
RqJA = 96 °C/W
0.2
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
www.onsemi.com
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FDD6530A_NL
Power Field-Effect Transistor, 21A I(D), 20V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
FDD6606_NL
Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
FDD6612A_NL
Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明