FDD6N50TM-WS [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，500 V，6 A，900 mΩ，DPAK;
| 型号： | FDD6N50TM-WS |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，500 V，6 A，900 mΩ，DPAK |
| 文件： | 总10页 (文件大小：1037K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD6N50 / FDU6N50
TM
N-Channel UniFET MOSFET
500 V, 6 A, 900 mΩ
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Features
•
•
•
•
•
RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A
Low Gate Charge (Typ. 12.8 nC)
Low Crss (Typ. 9 pF)
100% Avalanche Tested
Improved dv/dt Capability
Applications
•
•
•
•
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
D
G
S
I-PAK
G
D-PAK
G
D
S
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
FDD6N50TM /
FDD6N50TM-WS /
FDU6N50TU
Symbol
VDSS
Parameter
Unit
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
6
3.8
A
A
(Note 1)
IDM
Drain Current
- Pulsed
24
±30
270
6
A
V
VGSS
EAS
IAR
Gate-Source voltage
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
8.9
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
89
0.71
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
°C
Maximum Lead Temperature for Soldering, 1/8” from Case for
5 Seconds
300
°C
Thermal Characteristics
FDD6N50TM /
FDD6N50TM-WS /
FDU6N50TU
Symbol
Parameter
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
1.4
83
°C/W
©2006 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
Publication Order Number:
FDU6N50/D
Package Marking and Ordering Information
Part Number
FDD6N50TM
Top Mark
FDD6N50
FDD6N50S
FDU6N50
Package
DPAK
DPAK
IPAK
Packing Method
Tape and Reel
Tape and Reel
Tube
Reel Size
330 mm
330 mm
N/A
Tape Width
16 mm
16 mm
N/A
Quantity
2500 units
2500 units
75 units
FDD6N50TM-WS
FDU6N50TU
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
D = 250 µA, Referenced to 25°C
500
--
--
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
I
0.5
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
1
10
µA
µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3 A
VDS = 40 V, ID = 3 A
3.0
--
--
5.0
0.9
--
V
Ω
S
Static Drain-Source
On-Resistance
0.76
2.5
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
720
95
9
940
190
13.5
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250 V, ID = 6 A,
--
--
--
--
--
--
--
6
55
20
120
60
ns
ns
V
GS = 10 V, RG = 25 Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
25
ns
(Note 4)
(Note 4)
35
80
ns
Qg
VDS = 400 V, ID = 6 A,
VGS = 10 V
12.8
3.7
5.8
16.6
--
nC
nC
nC
Qgs
Qgd
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
6
24
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 6 A
--
V
VGS = 0 V, IS = 6 A,
275
1.7
ns
µC
dIF/dt =100 A/µs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 6 A, V = 50 V, L=13.5 mH, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 6 A, di/dt ≤ 200 A/µs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
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2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
VGS
Top :
10.0 V
8.0V
101
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
15
10
5
150℃
25℃
Bottom : 5.0 V
100
10-1
10-2
-55℃
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
※ Note
1. VDS = 40V
2. 250μ s Pulse Test
0
0
10
20
30
40
50
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
2.5
2.0
1.5
1.0
0.5
0.0
101
100
10-1
VGS = 10V
VGS = 20V
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
VDS = 250V
Coss = Cds + Cgd
Crss = Cgd
1000
100
10
VDS = 400V
C
iss
Coss
6
Crss
4
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
2
※ Note : ID = 6A
0
100
101
0
5
10
15
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
♦ Notes :
1. VGS = 0 V
♦ Notes :
1. VGS = 10 V
2. ID = 3 A
2. ID = 250 µA
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
102
Operation in This Area
is Limited by R DS(on)
10 us
101
100 us
1 ms
10 ms
100
DC
※ Notes :
10-1
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
10-2
100
101
102
103
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
100
10-1
10-2
D=0.5
0.2
0.1
※
Notes :
1. Zθ (t) = 1.4 ℃ /W M ax.
JC
2. Duty Factor, D=t1/t2
3. TJM - TC
=
PDM * Zθ (t)
JC
0.05
0.02
0.01
PDM
t1
t2
single pulse
10-4
10-5
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
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4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
7
Mechanical Dimensions
Figure 17. TO-251 (I-PAK), Molded, 3-Lead, Option AA
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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