FDD8453LZ-F085 [ONSEMI]
40 V、50 A、5.0 mΩ、DPAKN 沟道 PowerTrench®;
| 型号： | FDD8453LZ-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 40 V、50 A、5.0 mΩ、DPAKN 沟道 PowerTrench® |
| 文件： | 总8页 (文件大小：530K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDD8453LZ-F085
®
N-Channel Power Trench MOSFET
40V, 50A, 6.5mΩ
Features
Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A
Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A
General Description
This N-Channel MOSFET is produced using ON
Semiconductor’s advanced PowerTrench® process that
has been especially tailored to minimize the
on-state resistance and switching loss. G-S zener haS
HBM ESD protection level > 7kv typical
RoHS Compliant
been added to enhance ESD voltage level.
Qualified to AEC Q101
Applications
Inverter
Synchronous Rectifier
Symbol
Package
D
D
G
G
S
D-PAK
(TO-252)
S
©2012 Semiconductor Components Industries, LLC.
August-2017,Rev. 3
Publication Order Number:
FDD8453LZ-F085/D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
VGS
±20
Drain Current
- Continuous (Package limited)
-Pulsed
TC = 25°C
50
ID
A
Figure4
88
EAS
PD
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/oC
oC
Power Dissipation
Dreate above 25oC
118
0.79
TJ, TSTG Operating and Storage Temperature
-55 to + 175
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient, 1in2 copper pad area
1.27
52
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
FDD8453LZ
FDD8453LZ-F085
D-PAK(TO-252)
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
IDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
40
-
-
-
-
-
-
1
V
V
DS = 32V,
GS = 0V
μA
uA
V
T
C = 150oC
-
250
±10
IGSS
VGS = ±20V
-
On Characteristics
VGS(th)
rDS(on)
gFS
Gate to Source Threshold Voltage
V
GS = VDS, ID = 250μA
1.0
1.8
5.0
6.0
9.4
91
3.0
6.5
7.8
12.2
-
V
ID = 15A, VGS= 10V
-
-
mΩ
mΩ
mΩ
S
Drain to Source On Resistance
Forward Transconductance
ID = 13A, VGS= 4.5V
ID = 15A, VGS= 10V TJ=175oC
-
V
DS = 5V, ID = 15A
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
2935
340
260
1.8
60
-
-
pF
pF
pF
Ω
V
DS = 20V, VGS = 0V,
Coss
Crss
Rg
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
-
f = 1MHz
-
Qg(ToT)
Qg(5)
Qgs
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V
V
GS = 0 to 10V
GS = 0 to 5V
78
42
-
nC
nC
nC
nC
VDD = 20V
ID = 15A
Ig=1mA
32
7.5
13
Qgd
-
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2
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
td(on)
tr
Turn-On Time
Turn-On Delay Time
Rise Time
-
-
-
-
-
-
-
34
-
ns
ns
ns
ns
ns
ns
12
10
43
7
-
VDD = 20V, ID = 15A,
VGS = 10V, RGEN = 6Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
-
-
toff
Turn-Off Time
-
80
Drain-Source Diode Characteristics
I
SD = 2A
-
-
-
-
0.7
0.8
25
1.2
1.3
33
V
VSD
Source to Drain Diode Voltage
ISD = 15A
V
trr
Reverse Recovery Time
ns
nC
IF = 15A, dISD/dt = 100A/μs
Qrr
Reverse Recovery Charge
14
19
Notes:
o
1: Starting T = 25 C, L = 0.11mH, I
= 40A, V
= 36V during inductor charging and V = 0V during the time in Avalanche.
J
AS
D
D
D
D
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All ON Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
www.onsemi.com
3
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
90
60
30
0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
t
0.01
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA C
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1E4
1000
100
10
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
175 - TC
I = I2
150
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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4
Typical Characteristics
1000
100
10
1000
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
AS
DSS DD
100
10
STARTING TJ = 25oC
100us
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
1
STARTING TJ = 150oC
SINGLE PULSE
T
= MAX RATED
J
10ms
DC
o
T
C
= 25 C
1
0.1
0.001
0.01
0.1
1
10
100
1000
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
100
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 10V
VGS = 4V
VDD = 5V
75
VGS = 3.5V
75
50
25
0
VGS = 4.5V
50
TJ = 175oC
25
VGS = 3V
TJ = 25oC
TJ = -55oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
21
2.2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 15A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
18
15
12
9
TJ = 175oC
TJ = 25oC
6
ID = 15A
V
GS = 10V
3
2
4
6
8
10
-80
-40
0
40
80
120
160
200
o
TJ, JUNCTION TEMPERATURE( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
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5
Typical Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
VGS = VDS
ID = 1mA
I
D
= 250μA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
ID = 15A
Ciss
8
VDD = 15V
VDD = 20V
6
1000
4
Coss
VDD = 25V
2
0
f = 1MHz
Crss
VGS = 0V
100
0.1
1
10
40
0
10
20
30
40
50
60
70
Qg, GATE CHARGE(nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge vs Gate to Source Voltage
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6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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