FDFMA2N028Z [ONSEMI]
集成式 N 沟道，Power Trench® MOSFET 和肖特基二极管，20V，3.7A，68mΩ;
| 型号： | FDFMA2N028Z |
| 厂家： | 
ONSEMI |
| 描述： | 集成式 N 沟道，Power Trench® MOSFET 和肖特基二极管，20V，3.7A，68mΩ 开关 光电二极管 晶体管 肖特基二极管 |
| 文件： | 总10页 (文件大小：756K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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July 2014
FDFMA2N028Z
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
20V, 3.7A, 68mΩ
Features
General Description
This device is designed specifically as a single package solution
for a boost topology in cellular handset and other ultra-portable
applications. It features a MOSFET with low on-state resistance,
and an independently connected schottky diode with low forward
voltage.
MOSFET
Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A
Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A
HBM ESD protection level > 2kV (Note 3)
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
Schottky
VF < 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
Application
DC - DC Conversion
RoHS Compliant
Pin 1
D
NC
A
C
6
A 1
5
4
2
3
NC
D
G
S
C
S
G
MicroFET 2X2
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
20
V
V
±12
(Note 1a)
3.7
ID
A
6
Power Dissipation
Power Dissipation
(Note 1a)
(Note 1b)
1.4
PD
W
0.7
TJ, TSTG
VRR
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
-55 to +150
°C
V
20
2
IO
A
Thermal Characteristics
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
°C/W
140
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8mm
Quantity
.N28
FDFMA2N028Z
MicroFET 2X2
7’’
3000 units
©2008 Fairchild Semiconductor Corporation
FDFMA2N028Z Rev.B2
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
D = 250μA, referenced to 25°C
20
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
15
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 16V, VGS = 0V
VGS = ±12V, VDS = 0V
1
μA
μA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
0.6
1.0
–4
1.5
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
mV/°C
V
GS = 4.5V, ID = 3.7A
37
50
53
16
68
86
90
rDS(on)
Static Drain to Source On Resistance
VGS = 2.5V, ID = 3.3A
mΩ
VGS = 4.5V, ID = 3.7A, TJ = 125°C
VDS = 10V, ID = 3.7A
gFS
Forward Trans conductance
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
340
80
455
110
90
pF
pF
pF
V
DS = 10V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
60
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8
8
16
16
26
6
ns
ns
VDD = 10V, ID = 1A
VGS = 4.5V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
14
3
ns
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
4
6
nC
nC
nC
V
DS = 10V ID = 3.7A
VGS = 4.5V
0.7
1.1
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain-Source Diode Forward Current
1.1
1.2
A
V
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.1A (Note 2)
0.7
11
2
Reverse Recovery Time
IF = 3.7A, di/dt = 100A/μs
Reverse Recovery Charge
ns
nC
Qrr
Schottky Diode Characteristics
VR
Reverse Voltage
IR = 1mA
VR = 20V
TJ = 25°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
20
V
30
300
45
μA
mA
IR
Reverse Leakage
10
0.32
0.21
0.37
0.28
0.37
0.26
0.435
0.33
IF = 500mA
IF = 1A
VF
Forward Voltage
V
www.fairchildsemi.com
2
FDFMA2N028Z Rev.B2
Electrical Characteristics TJ = 25°C unless otherwise noted
Notes:
2
1: R
is determined with the device mounted on a 1in pad 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined
θJA
θJC
θJA
by the user's board design.
(a) MOSFET R
o
2
= 86 C/W when mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
θJA
o
(b) MOSFET R
= 173 C/W when mounted on a minimum pad of 2 oz copper.
θJA
o
2
(c) Schottky R
(d) Schottky R
= 86 C/W when mounted on a 1in pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB.
θJA
o
= 140 C/W when mounted on a minimum pad of 2 oz copper.
θJA
o
o
o
d)140 C/W
o
b)173 C/W
c)86 C/W when
a)86 C/W
when mounted
on a minimum
pad of
copper.
when mounted
on a minimum
pad of
copper.
mounted on
1in pad of 2 oz
copper.
a
when mounted
on a 1in pad of
2 oz copper.
2
2
2 oz
2 oz
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
www.fairchildsemi.com
3
FDFMA2N028Z Rev.B2
Typical Characteristics TJ = 25°C unless otherwise noted
6
5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS = 2.0V
PULSE DURATION = 300μs
DUTY CYCLE =2%MAX
V
= 4.5V
GS
4
3
2
1
V
= 3.0V
GS
= 2.5V
VGS = 2.5V
V
GS
VGS = 3.0V
VGS = 3.5V
VGS = 4.5V
PULSE DURATION = 300μs
DUTY CYCLE = 2%MAX
V
= 2.0V
GS
V
= 1.5V
GS
0
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
DS
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
150
125
100
75
ID = 3.7A
I
D
= 1.85A
PULSE DURATION = 300μs
VGS = 4.5V
DUTY CYCLE = 2%MAX
1.4
1.2
1.0
0.8
0.6
T
J
= 125oC
50
T
J
= 25oC
2
25
-50 -25
0
25
50
75
100 125 150
0
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
10
1
6
VDD=5V
V
GS
= 0V
PULSE DURATION = 300μs
DUTY CYCLE = 2%MAX
5
4
3
0.1
T
J
= 125oC
T
J
= 25oC
T
J
= 125oC
0.01
0.001
0.0001
2
1
T
= 25oC
J
T
J
= -55oC
0.8
T
J
= -55oC
2.0
0
0.5
0.0
0.2
0.4
0.6
1.0
1.2
1.0
1.5
2.5
V , BODY DIODE FORWARD VOLTAGE (V)
SD
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
4
FDFMA2N028Z Rev.B2
Typical Characteristics TJ = 25°C unless otherwise noted
1000
100
10
10
I
D
= 3.7A
C
iss
8
6
4
2
0
V
= 15V
DD
V
= 5V
DD
C
oss
V
DD
= 10V
C
rss
f = 1MHz
= 0V
V
GS
20
0.1
1
10
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
50
20
rDS(on) LIMIT
SINGLE PULSE
= 173oC/W
10
R
100us
θJA
40
30
20
10
0
T =25oC
A
1ms
1
0.1
10ms
VGS=4.5V
100ms
SINGLE PULSE
RθJA=173oC/W
1s
10s
DC
SINGLE PULSE
o
TA = 25 C
0.01
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
102
103
0.1
1
10
60
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
Figure10. Single Pulse Maximum
Power Dissipation
10
1
100
10
= 125oC
T
J
= 125oC
T
J
1
T
J
= 85oC
T
J
= 85oC
0.1
0.1
0.01
0.001
T
J
= 25oC
= 25oC
25
0.01
0.001
T
J
0
200
400
600
800
0
5
10
15
20
30
V
F,
FORWARD VOLTAGE(mV)
V , REVERSE VOLTAGE (V)
R
Figure 11. Schottky Diode Forward Current
Figure 12. Schottky Diode Reverse Current
www.fairchildsemi.com
5
FDFMA2N028Z Rev.B2
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
1
2
0.01
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.005
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
6
FDFMA2N028Z Rev.B2
www.fairchildsemi.com
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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FDFMA2N028Z Rev.B2
7
www.fairchildsemi.com
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Datasheet Identification
Product Status
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Datasheet contains the design specifications for product development. Specifications
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Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I68
8
FDFMA2N028Z Rev.
B2
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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