FDG6318P [ONSEMI]
双 P 沟道,数字 FET,-20 V,-0.5 A,780 mΩ;型号: | FDG6318P |
厂家: | ONSEMI |
描述: | 双 P 沟道,数字 FET,-20 V,-0.5 A,780 mΩ 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:240K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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January 2003
FDG6318P
Dual P-Channel, Digital FET
General Description
Features
These dual P-Channel logic level enhancement mode
MOSFET are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
• –0.5 A, –20 V.
RDS(ON) = 780 mΩ @ VGS = –4.5 V
RDS(ON) = 1200 mΩ @ VGS = –2.5 V
• Very low level gate drive requirements allowing direct
applications as
a replacement for bipolar digital
transistors and small signal MOSFETS.
operation in 3V circuits (VGS(th) < 1.5V).
Applications
• Compact industry standard SC70-6 surface mount
package
• Battery management
S
G
D
S
G
D
D
G
S
1 or 4
2 or 5
3 or 6
6 or 3
5 or 2
4 or 1
D
G
Pin 1
S
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
–20
Units
V
V
A
VGSS
Gate-Source Voltage
±12
ID
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
–0.5
–1.8
PD
Power Dissipation for Single Operation
0.3
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
RθJA
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.38
FDG6318P
7’’
8mm
3000 units
FDG6318P Rev C (W)
2003 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
–20
V
V
GS = 0 V,
ID = –250 µA
Voltage
Breakdown Voltage Temperature
Coefficient
–10
∆BVDSS
∆TJ
ID = –250 µA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
nA
V
GS = ±12 V, VDS = 0 V
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.65
–1.8
–1.2
2
–1.5
V
V
DS = VGS
,
ID = –250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = –250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –0.5 A
V
VGS = –4.5 V, ID = –0.5 A, TJ=125°C
VGS = –4.5 V, VDS = –5 V
580
980
780
780
1200
mΩ
GS = –2.5 V, ID = –0.4 A
ID(on)
gFS
On–State Drain Current
A
S
Forward Transconductance
VDS = –5 V, ID = –0.5 A
1.1
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
83
20
pF
pF
pF
Ω
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
11
V
GS = 15 mV, f = 1.0 MHz
12.1
Switching Characteristics (Note 2)
V
DD = –10 V, ID = 1 A,
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
12
12
22
13
3
ns
ns
VGS = –4.5 V, RGEN = 6 Ω
6
ns
1
ns
V
DS = –10 V, ID = –0.6 A,
Qg
Qgs
Qgd
0.86
0.22
0.25
1.2
nC
nC
nC
VGS = –4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.25
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.25 A(Note 2)
–0.83
12.6
2.52
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = –0.5 A,
diF/dt = 100 A/µs
Qrr
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad .
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG6318P Rev C (W)
Typical Characteristics
1.8
1.75
1.5
-3.5V
VGS = -10.0V
-4.5V
-3.0V
-6.0V
VGS = -3.5V
-4.0V
1.2
0.6
0
-4.5V
-5.0V
-2.5V
1.25
1
-6.0V
-10.0V
-2.0V
0.75
0
0.4
0.8
-ID, DRAIN CURRENT (A)
1.2
1.6
0
0.5
1
1.5
2
2.5
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1
1.4
ID = -0.25A
ID = -0.5A
VGS = -4.5V
1.3
1.2
1.1
1
TA = 125oC
0.9
0.8
0.7
0.6
0.2
TA = 25oC
-50
-25
0
25
50
75
100
125
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
1.8
1.2
0.6
0
VGS = 0V
VDS = -5V
1
TA = -55oC
25oC
TA = 125oC
0.1
125oC
25oC
0.01
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.5
1
1.5
2
2.5
3
3.5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6318P Rev C (W)
Typical Characteristics
10
120
80
40
0
ID = -0.5A
f = 1MHz
GS = 0 V
VDS = -5V
V
8
-10V
Ciss
6
-15V
4
2
0
Coss
Crss
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
24
18
12
6
10
RDS(ON) LIMIT
SINGLE PULSE
R
θJA = 415oC/W
100µs
T
A = 25oC
1ms
1
10ms
100ms
1s
DC
VGS = -4.5V
0.1
SINGLE PULSE
R
θJA = 415oC/W
T
A = 25oC
0.01
0
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
R
θJA = 415 °C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
0.01
T
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDG6318P Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarksꢀ
ACEx
PACMAN
POP
Power247
PowerTrench
QFET
QS
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
FACT
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT Quiet Series
â
FAST
â
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
SyncFET
â
QT Optoelectronics TinyLogic
Quiet Series
RapidConfigure
RapidConnect
TruTranslation
UHC
UltraFET
MSXPro
OCX
â
OCXPro
OPTOLOGIC
Across the boardꢀAround the worldꢀ
The Power Franchise
ProgrammableActive Droop
â
â
SILENT SWITCHER VCX
SMARTSTART
OPTOPLANAR
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NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERSꢀ
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ
As used herein:
1ꢀ Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
userꢀ
2ꢀ A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectivenessꢀ
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product developmentꢀ Specifications may change in
any manner without noticeꢀ
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later dateꢀ
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
designꢀ
No Identification Needed
Obsolete
Full Production
This datasheet contains final specificationsꢀ Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve designꢀ
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductorꢀ
The datasheet is printed for reference information onlyꢀ
Revꢀ I2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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