FDG6322C [ONSEMI]
双 N 和 P 沟道数字 FET 25V;
| 型号： | FDG6322C |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道数字 FET 25V PC 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDG6322C
Dual N & P Channel Digital FET
Features
N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 W @ VGS= 4.5 V,
RDS(ON) = 5.0 W @ VGS= 2.7 V.
General Description
P-Ch -0.41 A,-25V, RDS(ON) = 1.1 W @ VGS= -4.5V,
DS(ON) = 1.5 W @ VGS= -2.7V.
These dual N & P-Channel logic level enhancement mode
field effect transistors are produced using ON
Semiconductor's proprietary, high cell density, DMOS
technology. This very high density process is especially
R
Very small package outline SC70-6.
tailored to minimizeon-state resistance.
This
device
Very low level gate drive requirements allowing direct
operation in 3 V circuits (VGS(th) < 1.5 V).
has been designed especially for low voltage applications
as a replacement for bipolar digital transistors and small
signal MOSFETs. Since bias resistors are not required,
this dual digital FET can replace several different digital
transistors, with different bias resistor values.
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SuperSOTTM-6
SO-8
SC70-6
SOT-8
SOT-23
SOIC-14
S2
6
4
1
2
3
G2
Q1
Q2
D1
D2
G1
1
pin
S1
SC70-6
Mark: .22
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol
Parameter
N-Channel
P-Channel
Units
Drain-Source Voltage
25
-25
V
VDS
S
VGSS
ID
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
8
-8
V
A
0.22
0.65
-0.41
-1.2
PD
Maximum Power Dissipation
(Note 1)
0.3
W
°C
kV
TJ,TSTG
ESD
Operating and Storage Temperature Range
-55 to 150
6
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RqJA
Thermal Resistance, Junction-to-Ambient (Note1)
415
°C/W
Publication Order Number:
FDG6322C/D
© 2012 Semiconductor Components Industries, LLC.
October-2017, Rev. 6
DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Type
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
ID = -250 µA, Referenced to 25 oC
VDS = 20 V, VGS= 0 V,
TJ = 55°C
N-Ch
25
V
mV/oC
µA
P-Ch -25
N-Ch
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
25
DBVDSS/DTJ
P-Ch
-22
IDSS
N-Ch
1
10
IDSS
VDS =-20 V, VGS = 0 V,
TJ = 55°C
P-Ch
-1
µA
-10
100
-100
IGSS
VGS = 8 V, VDS = 0 V
VGS = -8 V, VDS = 0 V
N-Ch
P-Ch
nA
nA
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
N-Ch 0.65
0.85
1.5
V
P-Ch -0.65 -0.82
-1.5
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C
ID= -250 µA, Referenced to 25 o C
N-Ch
P-Ch
N-Ch
-2.1
2.1
mV/ oC
DVGS(th)/DTJ
RDS(ON)
Static Drain-Source On-Resistance
VGS = 4.5 V, ID = 0.22 A
2.6
4
7
W
TJ =125°C
TJ =125°C
5.3
VGS = 2.7 V, ID = 0.19 A
VGS = -4.5 V, ID = -0.41 A
3.7
5
P-Ch
0.85
1.2
1.1
1.9
1.5
VGS = -2.7 V, ID = -0.25 A
VGS = 4.5 V, VDS = 5 V
VGS = -4.5 V, VDS = -5 V
VDS = 5 V, ID= 0.22 A
VDS = -5 V, ID = -0.5 A
1.15
ID(ON)
On-State Drain Current
N-Ch 0.22
P-Ch -0.41
N-Ch
A
S
gFS
Forward Transconductance
0.2
0.9
P-Ch
DYNAMIC CHARACTERISTICS
C
Input Capacitance
N-Channel
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9.5
62
6
pF
iss
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Coss
Crss
Output Capacitance
P-Channel
34
1.3
10
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
www.onsemi.com
2
Electrical Characteristics (continued)
SWITCHING CHARACTERISTICS (Note 2)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Type
N-Ch
P-Ch
N-Ch
tD(on)
Turn - On Delay Time
N-Channel
5
7
10
15
10
nS
VDD = 5 V, ID = 0.5 A,
tr
Turn - On Rise Time
4.5
nS
VGS = 4.5 V, RGEN = 50 W
P-Ch
N-Ch
P-Ch
N-Ch
8
4
16
8
tD(off)
Turn - Off Delay Time
Turn - Off Fall Time
P-Channel
nS
nS
VDD = -5 V, ID = -0.5 A,
55
3.2
80
7
tf
VGS = -4.5 V, RGEN = 50 W
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
35
60
0.4
1.5
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
0.29
1.1
nC
nC
nC
VDS= 5 V, ID = 0.22 A,
VGS = 4.5 V
Qgs
Qgd
0.12
0.31
0.03
0.29
P- Channel
VDS = -5 V, ID = -0.41 A,
VGS = -4.5 V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
0.25
-0.25
1.2
A
V
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 0.5 A (Note 2)
VGS = 0 V, IS = -0.5 A (Note 2)
0.8
-0.85
-1.2
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed
by design while RqCA is determined by the user's board design. R JA = 415OC/W on minimum mounting pad on FR-4 board in still air.
q
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
www.onsemi.com
3
Typical Electrical Characteristics: N-Channel
5
4.5
4
0.5
V
=4.5V
GS
3.5V
V
= 2.5V
0.4
0.3
0.2
0.1
0
GS
3.0V
2.7V
2.7V
3.0V
3.5
3
2.5V
3.5V
4.0V
0.3
4.5V
2.0V
5.0V
2.5
2
0
0.1
0.2
, DRAIN CURRENT (A)
0.4
0
1
2
3
4
5
I
V
, DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
20
16
12
8
1.8
1.6
1.4
1.2
1
I
= 0.22A
ID = 0.10A
D
V
= 4.5V
GS
TA =125°C
25°C
0.8
4
0.6
-50
0
-25
0
25
50
75
100
125
150
1
2
3
4
5
T , JUNCTION TEMPERATURE (°C)
J
V
,GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0.4
0.1
0.2
T
= -55°C
V
= 0V
V
= 5V
J
GS
DS
25°C
125°C
0.15
0.1
0.05
0
T
= 125°C
25°C
J
0.01
0.001
-55°C
0.0001
0
0.2
V
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
, BODY DIODE FORWARD VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
SD
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
www.onsemi.com
4
Typical Electrical Characteristics: N-Channel (continued)
30
6
VDS = 5V
I D = 0.22A
10V
5
4
3
2
1
0
15
C
iss
8
5
C
oss
C
rss
f = 1 MHz
VGS = 0 V
3
2
0.1
0.3
1
3
10
25
0
0.1
0.2
Q
0.3
0.4
0.5
0.6
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
, GATE CHARGE (nC)
g
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
1
50
40
30
20
10
0
SINGLE PULSE
RqJA=415°C/W
TA= 25°C
0.3
0.1
VGS = 4.5V
SINGLE PULSE
0.03
0.01
JA
Rq = 415 °C/W
TA = 25°C
0.0001
0.001
0.01
0.1
1
10
200
0.4
0.8
2
5
10
25
40
SINGLE PULSE TIME (SEC)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
www.onsemi.com
5
Typical Electrical Characteristics: P-Channel
2.5
2
1.2
VGS =-4.5V
-3.0V
-2.7V
-2.5V
VGS = -2.0V
0.9
0.6
0.3
0
-2.5V
1.5
1
-2.7V
-2.0V
-3.0V
-3.5V
-4.5V
-1.5V
0.5
0
0.2
0.4
0.6
0.8
1
1.2
0
1
2
3
4
-I , DRAIN CURRENT (A)
D
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 11. On-Region Characteristics.
5
4
3
2
1
0
1.6
ID = -0.2A
ID = -0.41A
VGS= -4.5V
1.4
1.2
1
TJ = 125 ° C
25° C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T
, JUNCTION TEMPERATURE (°C)
-V , GATE TO SOURCE VOLTAGE (V)
GS
J
Figure 13. On-Resistance Variation
with Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
1
1
0.8
0.6
0.4
0.2
0
VGS= 0V
T = -55°C
J
VDS = -5V
25°C
T = 125°C
J
0.1
125°C
25°C
0.01
-55°C
0.001
0.0001
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
-V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
www.onsemi.com
6
1
Typical Electrical Characteristics: P-Channel (continued)
200
80
5
4
3
2
1
0
ID = -0.41A
VDS= -5V
-10V
-15V
C
iss
30
10
C
oss
C
rss
f = 1 MHz
VGS = 0 V
5
3
0.1
0.3
1
2
5
10
25
0
0.4
0.8
, GATE CHARGE (nC)
1.2
1.6
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
Q
g
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
50
3
SINGLE PULSE
RqJA=415°C/W
TA= 25°C
40
30
20
10
0
1
0.5
0.1
VGS = -4.5V
SINGLE PULSE
RqJA = 415°C
0.05
TA = 25°C
0.01
0.1
0.0001
0.001
0.01
0.1
1
10
200
0.2
0.5
1
2
5
10
25 40
SINGLE PULSE TIME (SEC)
- V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power
Dissipation.
www.onsemi.com
7
Typical Thermal Characteristics: N & P-Channel (continued)
1
D = 0.5
0.5
JA
(t) = r(t) * R
q
R
JA
q
0.2
0.2
R
=415 °C/W
JA
q
0.1
0.1
P(pk)
0.05
0.05
t1
0.02
0.01
Single Pulse
t2
0.02
0.01
T - T = P * R
(t)
JA
q
J
A
Duty Cycle, D = t1/ t 2
0.005
0.002
0.0001
0.001
0.01
0.1
1
10
100
200
t
, TIME (sec)
1
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermalresponse will change depending on the circuit board design.
www.onsemi.com
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FDG6322C_NL
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明