FDH038AN08A1 [ONSEMI]
N 沟道 PowerTrench® MOSFET 75V、80A、3.8mΩ;
| 型号： | FDH038AN08A1 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 75V、80A、3.8mΩ |
| 文件： | 总13页 (文件大小：648K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCHꢀ
V
R
MAX
I MAX
D
DSS
DS(ON)
75 V
3.8 mW
80 A
D
S
75 V, 80 A, 3.8 mW
FDH038AN08A1
G
Features
R
= 3.5 mW (Typ.), V = 10 V, I = 80 A
GS D
DS(ON)
Q (tot) = 125 nC (Typ.), V = 10 V
g
GS
Low Miller Charge
Low Q Body Diode
rr
G
UIS Capability (Single Pulse and Repetitive Pulse)
This Device is Pb−Free and is RoHS Compliant
D
S
TO−247−3
CASE 340CK
Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
MARKING DIAGRAM
MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted)
C
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current − Continuous
Value
75
Unit
V
&Z&3&K
FDH
038AN08A1
V
DSS
V
GS
20
V
I
D
A
(T < 158C, V = 10 V)
80
22
C
GS
(T = 25C, V = 10 V,
A
GS
= 30C/W)
R
q
JA
I
Drain Current − Pulsed
Figure 4
1.17
A
J
D
E
AS
Single Pulse Avalanche Energy
(Note 1)
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
P
D
Power Dissipation (T = 25C)
450
3.0
W
W/C
C
− Derate Above 25C
FDH038AN08A1
= Specific Device Code
T , T
Operating and Storage Temperature
Range
−55 to +175
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1. Starting T = 25C, L = 0.65 mH, I = 60 A.
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case,
Max. TO−247
0.33
_C/W
q
JC
R
Thermal Resistance,
Junction to Ambient, Max. TO−247
30
_C/W
q
JA
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
July, 2023 − Rev. 4
FDH038AN08A1/D
FDH038AN08A1
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
I
= 250 mA, V = 0 V
75
−
−
−
−
−
−
1
V
VDSS
D
GS
I
V
V
V
= 60 V, V = 0 V
mA
DSS
DS
DS
GS
GS
= 60 V, V = 0 V, T = 150_C
−
250
100
GS
C
I
Gate to Source Leakage Current
= 20 V
−
nA
GSS
ON CHARACTERISTICS
V
GS(TH)
R
DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
= V , I = 250 mA
2.0
−
−
4.0
V
GS
DS
D
I
D
I
D
I
D
= 80 A, V = 10 V
0.0035 0.0038
0.0047 0.0071
W
GS
= 40 V, V = 6 V
−
GS
= 80 A, V = 10 V, T = 175 C
−
0.0074
0.008
GS
j
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
−
−
−
−
8665
1320
340
−
−
pF
pF
pF
nC
ISS
DS
GS
C
OSS
C
RSS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10 V
−
Q
V
GS
V
DD
= 0 V to 10 V,
125
160
g(TOT)
= 40 V, I = 80 A, I = 1.0 mA
D
g
Q
Threshold Gate Charge
V
GS
V
DD
= 0 V to 2 V,
−
17
22
nC
g(TH)
= 40 V, I = 80 A, I = 1.0 mA
D
g
Q
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DD
= 40 V, I = 80 A, I = 1.0 mA
−
−
−
57
42
30
−
−
−
nC
nC
nC
gs
D
g
Q
gs2
Q
gd
SWITCHING CHARACTERISTICS (V = 10 V)
GS
t
Turn-On Time
Turn-On Delay Time
Rise Time
V
DD
V
GS
= 40 V, I = 80 A,
−
−
−
−
−
−
−
345
−
ns
ns
ns
ns
ns
ns
ON
D
= 10 V, R = 2.4 W
GS
t
88
d(ON)
t
r
141
232
126
−
−
t
Turn-Off Delay Time
Fall Time
−
d(OFF)
t
f
−
t
Turn-Off Time
530
OFF
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Voltage
I
I
I
I
= 80 A
= 40 A
−
−
−
−
−
−
−
−
1.25
1
V
V
SD
SD
SD
SD
SD
t
Reverse Recovery Time
= 75 A, dl /dt = 100 A/ms
50
65
ns
nC
rr
SD
Q
Reverse Recovered Charge
= 75 A, dl /dt = 100 A/ms
SD
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDH038AN08A1
FDH038AN08A1
TO−247
Tube
N/A
30 Units
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2
FDH038AN08A1
TYPICAL CHARACTERISTICS
(T = 25C UNLESS OTHERWISE NOTED)
C
1.2
1.0
0.8
0.6
0.4
0.2
0
280
240
200
160
120
80
CURRENT LIMITED
BY PACKAGE
40
V
= 10V
50
GS
0
0
25
50
75
100
150
175
125
o
25
75
100
125
150
175
o
T
, CASE TEMPERATURE ( C)
T
, CASE TEMPERATURE ( C)
C
C
Figure 1. Normalized Power
Dissipation vs. Ambient Temperature
Figure 2. Maximum Continuous
Drain Current vs Case Temperature
2
R
= 30ꢁ C/W
DUTY CYCLE − DESCENDING ORDER
Q
JA
1
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR:
D = t
/t
1
2
SINGLE PULSE
0.01
PEAK T = P
x Z
Q
x R
+ T
JC C
Q
J
DM
JC
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
3000
1000
o
T
= 25 C
C
FOR TEMPERATURES
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 − T
C
I = I
25
V
= 10V
150
GS
100
50
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
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3
FDH038AN08A1
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25C UNLESS OTHERWISE NOTED)
C
NOTE: Refer to onsemi Application Notes
AN−7514 and AN−7515
2000
1000
500
If R = 0
= (L)(I )/(1.3*RATED BV
10 ms
t
− V
DD
)
AV
AS
DSS
If R ꢂ 0
100 ms
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
− V ) +1]
DD
AS
DSS
100
100
10
1
o
1ms
STARTING T = 25 C
J
10ms
OPERATION IN THIS
AREA MAY BE
10
DC
LIMITED BY r
DS(ON)
o
STARTING T = 150 C
J
SINGLE PULSE
T
= MAX RATED
= 25 C
J
o
T
C
1
0.01
0.1
0.1
0.1
1
10
100
1
10
100
6.0
80
V
, DRAIN TO SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (ms)
DS
AV
Figure 5. Forward Bias Safe
Operating Area
Figure 6. Unclamped Inductive
Switching Capability
160
120
80
40
0
160
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
V
= 10V
GS
V
= 7V
GS
V
= 15V
DD
120
80
40
0
o
T
= 175 C
J
V
= 6V
GS
V
= 5V
GS
o
T
= −55 C
J
o
T
= 25 C
J
o
T
= 25 C
C
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
3.0
3.5
4.0
4.5
5.0
5.5
0
0.5
1.0
1.5
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
GS
DS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
6
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 6V
GS
5
4
3
2
V
= 10V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 10V,
I
D
= 80A
GS
−80
−40
0
40
80
120
160
200
0
20
40
I , DRAIN CURRENT (A)
60
o
T , JUNCTION TEMPERATURE ( C)
J
D
Figure 9. Drain to Source On Resistance
vs Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs. Junction Temperature
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4
FDH038AN08A1
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25C UNLESS OTHERWISE NOTED)
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.2
= 250 mA
D
V
= V , I
DS
I
= 250 mA
GS
D
1.1
1.0
0.9
−80
−40
0
40
80
120
o
160
200
−80
−40
0
40
80
120
160
200
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 11. Normalized Gate Threshold Voltage
vs. Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
8
20000
V
= 40V
DD
C
C + C
GD
ISS
GS
10000
1000
100
^ C
C
+ C
GD
OSS
DS
6
C
C
GD
4
RSS
WAVEFORMS IN
DESCENDING ORDER:
2
I
I
= 80A
= 40A
D
D
V
= 0V, f = 1MHz
GS
0
0
25
50
75
100
125
0.1
1
10
75
Q , GATE CHARGE (nC)
g
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 13. Capacitance vs. Drain
to Source Voltage
Figure 14. Gate Charge Waveforms
for Constant Gate Currents
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5
FDH038AN08A1
TEST CIRCUITS AND WAVEFORMS
V
DS
L
VARY tp TO OBTAIN
REQUIRED PEAK I
AS
R
G
+
V
DD
DUT
−
V
GS
tp
0 V
I
AS
0.01 W
Figure 15. Unclamped Energy
Test Circuit
Figure 16. Unclamped Energy
Waveforms
V
DS
L
V
GS
+
V
DD
DUT
−
Ig(REF)
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
V
DS
R
L
+
V
GS
V
DD
−
DUT
R
GS
V
GS
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
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FDH038AN08A1
PSPICE ELECTRICAL MODEL
.SUBCKT FDH038AN08A1 2 1 3 ; rev January 2003
CA 12 8 1.0e−9
Cb 15 14 3.1e−9
Cin 6 8 8.22e−9
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 84.9
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 4.81e−9
Ldrain 2 5 1.0e−9
Lsource 3 7 4.63e−9
RLgate 1 9 48.1
RLdrain 2 5 10
RLsource 3 7 46.3
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 2.0e−4
Rgate 9 20 20
RSLC1 5 51 RSLCMOD 1.0e−6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 2.6e−3
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e−6*300),10))}
.MODEL DbodyMOD D (IS=2.4E−11 N=1.02 RS=1.65e−3 TRS1=3.2e−3 TRS2=2.0e−7
+ CJO=6.0e−9 M=5.6e−1 TT=2.38e−8 XTI=3.9)
.MODEL DbreakMOD D (RS=1.5e−1 TRS1=1.0e−3 TRS2=−8.9e−6)
.MODEL DplcapMOD D (CJO=1.5e−9 IS=1.0e−30 N=10 M=0.47)
.MODEL MmedMOD NMOS (VTO=3.2 KP=1.5 IS=1.0e−30 N=10 TOX=1 L=1u W=1u RG=20)
.MODEL MstroMOD NMOS (VTO=3.95 KP=235 IS=1.0e−30 N=10 TOX=1 L=1u W=1u)
.MODEL MweakMOD NMOS (VTO=2.73 KP=0.02 IS=1e−30 N=10 TOX=1 L=1u W=1u RG=200 RS=.01)
.MODEL RbreakMOD RES (TC1=1.05e−3 TC2=−9.0e−7)
.MODEL RdrainMOD RES (TC1=1.8e−2 TC2=2.2e−4)
.MODEL RSLCMOD RES (TC1=2.0e−3 TC2=1.0e−5)
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FDH038AN08A1
.MODEL RsourceMOD RES (TC1=5.0e−3 TC2=1.0e−6)
.MODEL RvthresMOD RES (TC1=−4.2e−3 TC2=−1.8e−5)
.MODEL RvtempMOD RES (TC1=−4.5e−3 TC2=2.0e−6)
.MODEL S1AMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=−4 VOFF=−1.5)
.MODEL S1BMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=−1.5 VOFF=−4)
.MODEL S2AMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=−0.5 VOFF=0.5)
.MODEL S2BMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=0.5 VOFF=−0.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub−Circuit for the Power MOSFET
Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by
William J. Hepp and C. Frank Wheatley.
Figure 21. PSPICE Electrical Model
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8
FDH038AN08A1
SABER ELECTRICAL MODEL
REV January 2003
template FDH038AN08A1 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=2.4e−11,nl=1.02,rs=1.65e−3,trs1=3.2e−3,trs2=2.0e−7,cjo=6.0e−9,m=5.6e−1,tt=2.38e−8,xti=3.9)
dp..model dbreakmod = (rs=1.5e−1,trs1=1.0e−3,trs2=−8.9e−6)
dp..model dplcapmod = (cjo=1.5e−9,isl=10e−30,nl=10,m=0.47)
m..model mmedmod = (type=_n,vto=3.2,kp=1.5,is=1e−30, tox=1)
m..model mstrongmod = (type=_n,vto=3.95,kp=235,is=1.0e−30, tox=1)
m..model mweakmod = (type=_n,vto=2.73,kp=0.02,is=1.0e−30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e−5,roff=0.1,von=−4,voff=−1.5)
sw_vcsp..model s1bmod = (ron=1e−5,roff=0.1,von=−1.5,voff=−4)
sw_vcsp..model s2amod = (ron=1e−5,roff=0.1,von=−0.5,voff=0.5)
sw_vcsp..model s2bmod = (ron=1e−5,roff=0.1,von=0.5,voff=−0.5)
c.ca n12 n8 = 1.0e−9
c.cb n15 n14 = 3.1e−9
c.cin n6 n8 = 8.22e−9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 84.9
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 4.81e−9
l.ldrain n2 n5 = 1.0e−9
l.lsource n3 n7 = 4.63e−9
res.rlgate n1 n9 = 48.1
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 46.3
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.05e−3,tc2=−9.0e−7
res.rdrain n50 n16 = 2.0e−4, tc1=1.8e−2,tc2=2.2e−4
res.rgate n9 n20 = 20
res.rslc1 n5 n51 = 1e−6, tc1=2.0e−3,tc2=1.0e−5
res.rslc2 n5 n50 = 1.0e3
res.rsource n8 n7 = 2.6e−3, tc1=5.0e−3,tc2=1.0e−6
res.rvthres n22 n8 = 1, tc1=−4.2e−3,tc2=−1.8e−5
res.rvtemp n18 n19 = 1, tc1=−4.5e−3,tc2=2.0e−6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
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FDH038AN08A1
v.vbat n22 n19 = dc=1
equations {
i (n51−>n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e−9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/300))** 10))
}
}
Figure 22. SABER Electrical Model
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10
FDH038AN08A1
SPICE THERMAL MODEL
REV 23 January 2003
FDH038AN08A1T
th
JUNCTION
CTHERM1
RTHERM1
RTHERM2
CTHERM1 TH 6 5.5e−3
CTHERM2 6 5 6.0e−3
CTHERM3 5 4 7.4e−3
CTHERM4 4 3 7.65e−3
CTHERM5 3 2 5.85e−2
CTHERM6 2 TL 6.0e−1
6
5
CTHERM2
CTHERM3
CTHERM4
RTHERM1 TH 6 9.0e−3
RTHERM2 6 5 2.08e−2
RTHERM3 5 4 2.28e−2
RTHERM4 4 3 7.0e−2
RTHERM5 3 2 7.5e−2
RTHERM6 2 TL 8.5e−2
RTHERM3
RTHERM4
SABER THERMAL MODEL
SABER thermal model FDH038AN08A1T
template thermal_model th tl
thermal_c th, tl
4
3
2
{
ctherm.ctherm1 th 6 =5.5e−3
ctherm.ctherm2 6 5 =6.0e−3
ctherm.ctherm3 5 4 =7.4e−3
ctherm.ctherm4 4 3 =7.65e−3
ctherm.ctherm5 3 2 =5.85e−2
ctherm.ctherm6 2 tl =6.0e−1
rtherm.rtherm1 th 6 =9.0e−3
rtherm.rtherm2 6 5 =2.08e−2
rtherm.rtherm3 5 4 =2.28e−2
rtherm.rtherm4 4 3 =7.0e−2
rtherm.rtherm5 3 2 =7.5e−2
rtherm.rtherm6 2 tl =8.5e−2
}
CTHERM5
CTHERM6
RTHERM5
RTHERM6
tl
CASE
Figure 23. Thermal Model
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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