FDMB2307NZ [ONSEMI]
双共漏极，N 沟道，PowerTrench® MOSFET，20V，9.7A，16.5mΩ;
| 型号： | FDMB2307NZ |
| 厂家： | 
ONSEMI |
| 描述： | 双共漏极，N 沟道，PowerTrench® MOSFET，20V，9.7A，16.5mΩ 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Dual, N-Channel,
Common Drain,
V
r
MAX
I
MAX
S1S2
S1S2(on)
S1S2
20 V
16.5 mW @ 4.5 V
18 mW @ 4.2 V
21 mW @ 3.1 V
24 mW @ 2.5 V
9.7 A
POWERTRENCH)
20 V, 9.7 A, 16.5 mW
FDMB2307NZ
General Description
Pin 1
S1 S1 G1
D1/D2
This device is designed specifically as a single package solution for
Li−Ion battery pack protection circuit and other ultra−portable
applications. It features two common drain N−channel MOSFETs,
which enables bidirectional current flow, on onsemi’s advanced
POWERTRENCH process with state of the art MicroFETt
Leadframe, the FDMB2307NZ minimizes both PCB space and
Pin 1
r
.
S1S2(on)
S2 S2 G2
Bottom
Features
Top
• Max r
= 16.5 mW at V = 4.5 V, I = 8 A
GS D
S1S2(on)
WDFN6 2x3, 0.65P
CASE 511CX
• Max r
• Max r
• Max r
= 18 mW at V = 4.2 V, I = 7.4 A
GS D
S1S2(on)
S1S2(on)
S1S2(on)
= 21 mW at V = 3.1 V, I = 7 A
GS
D
= 24 mW at V = 2.5 V, I = 6.7 A
GS
D
• Low Profile − 0.8 mm Maximum − in the New Package MicroFET
2x3 mm
MARKING DIAGRAM
• HBM ESD Protection Level > 2 kV (Note 3)
• This Device is Pb−Free, Halide Free and is RoHS Compliant
&Z&2&K
307
Applications
• Li−Ion Battery Pack
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
&K = 2−Digits Lot Run Traceability Code
307 = Specific Device Code
Symbol
Parameter
Source1 to Source2 Voltage
Gate to Source Voltage (Note 4)
Source1 to Source2 Current
Ratings
20
Unit
V
V
S1S2
V
GS
12
V
I
A
S1S2
−Continuous T = 25°C (Note 1a)
9.7
40
PIN ASSIGNMENT
A
−Pulsed
P
D
Power Dissipation
W
T = 25°C (Note 1a)
2.2
0.8
A
G2
4
3
G1
T = 25°C (Note 1b)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
S2
S2
5
6
2
1
S1
S1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
R
q
JA
Thermal Resistance, Junction to Ambient
(Note 1a)
57
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
R
q
JA
Thermal Resistance, Junction to Ambient
(Note 1b)
161
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2023 − Rev. 3
FDMB2307NZ/D
FDMB2307NZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
I
Zero Gate Voltage Source1 to Source2
Current
V
V
= 16 V, V = 0 V
−
−
−
−
1
mA
mA
S1S2
S1S2
GS
I
Gate to Source Leakage Current
= 12 V, V = 0 V
S1S2
10
GSS
GS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
V
V
V
V
V
V
= V , I
= 250 mA
= 8 A
0.6
10.5
11
1
13.5
14
1.5
16.5
18
V
GS(th)
GS
GS
GS
GS
GS
GS
S1S2
S1S2 S1S2
r
Static Source1 to Source2 On Resistance
= 4.5 V, I
= 4.2 V, I
= 3.1 V, I
= 2.5 V, I
= 4.5 V, I
mW
S1S2(on)
S1S2
S1S2
S1S2
S1S2
S1S2
S1S2
= 7.4 A
= 7 A
11.5
12
16
21
= 6.7 A
18
24
= 8 A, T = 125°C
11
20
29
J
g
FS
Forward Transconductance
= 5 V, I
= 8 A
−
41
−
S
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
S1S2
= 10 V, V = 0 V, f = 1 MHz
−
−
1760
229
211
2.6
2640
345
320
8
pF
pF
pF
W
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Gate Resistance (Note 5)
−
R
0.1
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= 10 V, I
= 4.5 V, R
= 8 A,
= 6 W
−
−
−
−
−
12
19
32
9.5
20
22
34
51
17
28
ns
ns
ns
ns
nC
d(on)
S1S2
S1S2
GEN
GS
t
r
t
Turn−Off Delay Time
Fall Time
d(off)
t
f
Q
g
Total Gate Charge
V
G1S1
= 0 V to 5 V, V
= 10 V,
S1S2
I
= 8 A, V
= 0 V
S1S2
G2S2
Q
g
Total Gate Charge
V
= 0 V to 4.5 V, V
= 10 V,
−
18
25
nC
G1S1
S1S2
I
= 8 A, V
= 0 V
S1S2
G2S2
Q
Gate1 to Source1 Charge
V
S1S2
V
G2S2
= 10 V, I = 8 A,
S1S2
= 0 V
−
−
2.8
5.3
−
−
nC
nC
gs
Q
gd
Gate1 to Source2 “Miller” Charge
DRAIN−SOURCE CHARACTERISTICS
Maximum Continuous Source1−Source2 Diode Forward Current
Source1 to Source2 Diode Forward Voltage = 0 V, V = 4.5 V,
G2S2
I
−
−
−
8
A
V
fss
V
V
G1S1
0.8
1.2
fss
I
fss
= 8 A (Note 2)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 57°C/W when mounted on a
b. 161°C/W when mounted on a
minimum pad of 2 oz copper
2
1 in pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
5. Rg is measured on 100% of the die at wafer level.
www.onsemi.com
2
FDMB2307NZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
J
40
30
20
10
0
40
V
= 4.5 V
V
= 4.5 V
G1S1
GS
V
= 4.2 V
V
= 4.2 V
G1S1
GS
30
20
10
0
V
= 3.1 V
GS
V
= 3.1 V
G1S1
V
GS
= 2.5 V
V
G1S1
= 2.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
G2S2
= 4.5 V
0.0
0.2
0.4
0.6
0.8
0.0
0.2
0.4
0.6
0.8
V
S1S2
, SOURCE1 TO SOURCE2 VOLTAGE (V)
V
S1S2
, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. On−Region Characteristics
1.5
1.0
0.5
1.5
1.0
0.5
V
GS
= 2.5 V
V
= 3.1 V
G1S1
V
GS
= 3.1 V
V
= 2.5 V
G1S1
V
GS
= 4.2 V
V
= 4.5 V
V
GS
= 4.5 V
G1S1
V
= 4.2 V
G1S1
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
G2S2
= 4.5 V
0
10
20
30
40
0
10
20
30
40
I
, SOURCE1 TO SOURCE2 CURRENT (A)
I
S1S2
, SOURCE1 TO SOURCE2 CURRENT (A)
S1S2
Figure 3. Normalized On−Resistance vs.
Figure 4. Normalized On−Resistance vs.
Source1 to Source2 Current and Gate Voltage
Source1 to Source2 Current and Gate Voltage
1.6
80
I
= 8 A
PULSE DURATION = 80 ms
S1S2
V
GS
= 4.5 V
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
60
I
= 8 A
S1S2
40
T = 150°C
J
20
0
T = 25°C
J
−50 −25
0
25
50
75
100 125 150
1.0
1.5
V
2.0
2.5
3.0
3.5
4.0
4.5
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 5. Normalized On Resistance vs.
Junction Temperature
Figure 6. On Resistance vs. Gate to Source Voltage
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3
FDMB2307NZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
40
30
20
10
0
100
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 0 V, V
= 4.5 V
G1S1
G2S2
10
1
V
S1S2
= 5 V
T = 150°C
J
T = 150°C
J
T = 25°C
J
0.1
T = 25°C
J
0.01
0.001
T = −55°C
J
T = −55°C
J
0.5
1.0
1.5
2.0
25
16
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
fss
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Source1 to Source2 Diode Forward Voltage
vs. Source Current
5
4
3
2
1
0
10000
V
G2S2
= 0 V
f = 1 MHz
I
= 8 A
V
= 0 V
S1S2
GS
V
S1S2
= 8 V
C
iss
V
= 10 V
S1S2
1000
100
V
S1S2
= 12 V
C
oss
C
rss
0
5
10
15
20
0.1
1
10
, SOURCE1 TO SOURCE2 VOLTAGE (V)
S1S2
20
Q , GATE CHARGE (nC)
g
V
Figure 9. Gate Charge Characteristics
Figure 10. Capacitance vs. Source1 to Source2 Voltage
10−1
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
10−10
100
V
S1S2
= 0 V
10
1 ms
10 ms
T = 125°C
J
1
THIS AREA IS
100 ms
LIMITED BY r
DS(on)
T = 25°C
J
1 s
SINGLE PULSE
T = MAX RATED
R
0.1
10 s
DC
J
= 161°C/W
q
JA
T = 25°C
A
0.01
0
4
8
12
0.01
0.1
1
10
100
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
S1S2
, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 11. Gate Leakage Current vs.
Gate to Source Voltage
Figure 12. Forward Bias Safe Operating Area
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4
FDMB2307NZ
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)
J
1000
100
10
SINGLE PULSE
= 161°C/W
T = 25°C
A
R
q
JA
1
0.5
10−3
10−2
10−1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
0.01
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t / t
R
= 161°C/W
q
JA
1
2
PEAK T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.001
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDMB2307NZ
307
WDFN6 2x3, 0.65P
(Pb−Free, Halide Free)
7”
8 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2x3, 0.65P
CASE 511CX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13612G
WDFN6 2X3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
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© Semiconductor Components Industries, LLC, 2019
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