FDMC7692S [ONSEMI]
N 沟道,Power Trench® SyncFET™,30V,18A,9.3mΩ;型号: | FDMC7692S |
厂家: | ONSEMI |
描述: | N 沟道,Power Trench® SyncFET™,30V,18A,9.3mΩ 开关 脉冲 光电二极管 晶体管 |
文件: | 总9页 (文件大小:348K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH), SyncFETt
Pin 1
G
S
S
S
D
D
30 V, 18 A, 9.3 mW
D
D
Bottom
Top
WDFN8 3.3x3.3, 0.65P
CASE 511DQ (Option A)
FDMC7692S
General Description
MARKING DIAGRAM
This FDMC7692S is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance. This device is well suited for Power
Management and load switching applications common in Notebook
Computers and Portable Battery Packs.
ON AXYKK
FDMC
7692S
Features
FDMC7692S = Specific Device Code
• Max r
• Max r
= 9.3 mW at V = 10 V, I = 12.5 A
GS D
A
= Assembly Location
DS(on)
DS(on)
XY
KK
= 2−Digit Date Code
= 2−Digit Lot Run Traceability Code
= 13.6 mW at V = 4.5 V, I = 10.4 A
GS
D
• High Performance Technology for Extremely Low r
DS(on)
• These Devices are Pb−Free and are RoHS Compliant
PIN ASSIGNMENT
Applications
• DC − DC Buck Converters
• Notebook DC − DC Application
D 5
D 6
D 7
D 8
4
3
2
1
G
S
S
S
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2023 − Rev. 4
FDMC7692S/D
FDMC7692S
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Rating
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
30
20
V
I
D
Continuous
T
C
= 25°C
18
A
Continuous (Note 1a)
Pulsed
T = 25°C
A
12.5
45
E
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
21
mJ
W
AS
P
T
C
= 25°C
27
D
Power Dissipation (Note 1a)
T = 25°C
A
2.3
T , T
Operating and Storage Junction Temperature Range
−55 to 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
RqJC
Parameter
Rating
4.7
Unit
Thermal Resistance, Junction to Case
°C/W
RqJA
Thermal Resistance, Junction to Ambient (Note 1a)
53
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
2
a. 53°C/W when mounted on a 1 in pad
b. 125°C/W when mounted on a minimum
pad of 2 oz copper
of 2 oz copper
2. E of 21 mJ is based on starting T = 25°C; L = 0.3 mH, I = 12.0 A, V = 27 V, V = 10 V. 100% test at L = 3 mH, I = 3.2 A.
AS
J
AS
DD
GS
AS
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2
FDMC7692S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 1 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature
Coefficient
= 10 mA, referenced to 25°C
−
16
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
−
−
−
−
500
100
mA
DS
GS
I
= 20 V, V = 0 V
nA
GS
DS
ON CHARACTERISTICS (Note 3)
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 1 mA
1.2
2.0
3.0
V
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, referenced to 25°C
−
−5
−
mV/°C
GS(th)
J
DT
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 12.5 A
−
−
−
−
7.8
10.8
9.6
62
9.3
13.6
13.0
−
mW
DS(on)
D
= 4.5 V, I = 10.4 A
D
= 10 V, I = 12.5 A, T = 125°C
D
J
g
FS
= 5 V, I = 12.5 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
1040
445
40
1385
590
60
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1 MHz
1.1
2.9
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 15 V, I = 12.5 A, V = 10 V,
GEN
−
−
−
−
−
−
−
−
9
3
17
10
34
10
23
10
−
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
19
3
ns
d(off)
t
f
ns
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 15 V, I = 12.5 A
16
8
nC
nC
nC
nC
g
DD
D
= 0 V to 4.5 V, V = 15 V, I = 12.5 A
DD
D
Q
Total Gate Charge
= 15 V, I = 12.5 A
4
gs
D
Q
Gate to Drain “Miller” Charge
2
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 12.5 A (Note 3)
−
−
−
−
0.9
0.5
21
1.3
0.7
33
V
SD
GS
S
= 0 V, I = 0.9 A (Note 3)
GS
S
t
Reverse Recovery Time
I = 12.5 A, di/dt = 300 A/ms
F
ns
rr
Q
Reverse Recovery Charge
16
29
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDMC7692S
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
45
36
27
18
9
3.5
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
3.0
V
= 6 V
GS
V
= 3.5 V
GS
V
= 4.5 V
2.5
2.0
GS
V
GS
= 4 V
V
= 4 V
GS
V
GS
= 4.5 V
1.5
V
GS
= 3.5 V
V
GS
= 6 V
1.0
0.5
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 10 V
GS
0
0
9
18
27
36
45
0
0.2
0.4
0.6
0.8
1.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
40
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 12.5 A
D
I
= 12.5 A
D
= 10 V
GS
30
20
10
0
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
45
100
PULSE DURATION = 80 ms
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
36
10
V
DS
= 5 V
T = 125°C
J
27
18
9
1
0.1
T = 125°C
J
T = 25°C
J
T = 25°C
J
T = −55°C
J
0.01
0.001
T = −55°C
J
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC7692S
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
3000
I
= 12.5 A
DSS
V
DD
= 10 V
1000
C
iss
V
DD
= 15 V
6
C
oss
V
= 20 V
DD
4
100
10
2
C
rss
f = 1 MHz
= 0 V
V
GS
0
0
3
6
9
12
15
18
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
30
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
20
10
10
T = 25°C
J
100 ms
1 ms
T = 100°C
J
1
THIS AREA IS
LIMITED BY r
10 ms
DS(on)
100 ms
SINGLE PULSE
1 s
0.1
T = 125°C
T
= MAX RATED
J
J
10 s
DC
R
= 125°C/W
q
JA
T
A
= 25°C
0.01
1
0.001
0.01
0.1
1
10
50
0.01
0.1
1
10
100
t , TIME IN AVALANCHE (ms)
AV
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Forward Bias Safe Operating Area
1000
100
10
SINGLE PULSE
V
GS
= 10 V
R
= 125°C/W
q
JA
T
A
= 25°C
1
0.5
−2
10−4
10−3
10
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDMC7692S
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
SINGLE PULSE
NOTES:
Z
(t) = r(t) x R
qJA
qJA
0.001
0.0001
R
= 125 °C/W
qJA
Peak T = P
Duty Cycle, D = t / t
1
x Z (t) + T
J
DM
qJA A
2
−2
10−4
10−3
10
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
Device
†
Device Marking
Package Type
Shipping
FDMC7692S
FDMC7692S
WDFN8 3.3x3.3, 0.65P
case 511DQ
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SyncFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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