FDMC8200 [ONSEMI]
双 N 沟道，PowerTrench® MOSFET，30V，9.5mΩ 和 20mΩ;
| 型号： | FDMC8200 |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，PowerTrench® MOSFET，30V，9.5mΩ 和 20mΩ 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：308K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
D1
MOSFET – Dual, N-Channel,
POWERTRENCH)
D1
D1
G1
Pin 1
D1
D2/S1
30 V, 9.5 mW and 20 mW
S2
S2
S2
FDMC8200
G2
Top
General Description
V
IN
This device includes two specialized N−Channel MOSFETs in a
dual Power33 (3 mm x 3 mm MLP) package. The switch node has
been internally connected to enable easy placement and routing of
synchronous buck converters. The control MOSFET (Q1) and
synchronous MOSFET (Q2) have been designed to provide optimal
power efficiency.
V
IN
V
IN
G
HS
V
IN
SWITCH
NODE
GND
GND
GND
Features
G
LS
• Q1: N−Channel
Bottom
♦ Max r
♦ Max r
) = 20 mW at V = 10 V, I = 6 A
GS D
DS(on
WDFN8 3x3, 0.65P
(Power 33)
= 32 mW at V = 4.5 V, I = 5 A
DS(on)
GS
D
CASE 511DE
• Q2: N−Channel
♦ Max r
♦ Max r
= 9.5 mW at V = 10 V, I = 9 A
GS D
DS(on)
= 13.5 mW at V = 4.5 V, I = 7 A
DS(on)
GS
D
• This Device is Pb−Free, Halide Free and is RoHS Compliant
MARKING DIAGRAM
Applications
$Y&Z&2&K
FDMC
• Mobile Computing
• Mobile Internet Devices
• General Purpose Point of Load
8200
$Y
&Z
&2
&K
= Logo
= Assembly Plant Code
= 2−Digit Date Code
= 2−Digits Lot Run Traceability Code
FDMC8200 = Device Code
PIN ASSIGNMENT
Q2
S2
S2
S2
G2
5
6
7
8
4
3
2
1
D1
D1
D1
G1
Q1
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
February, 2023 − Rev. 1
FDMC8200/D
FDMC8200
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
C
Symbol
Parameter
Q1
30
20
18
23
Q2
30
20
18
45
Unit
V
V
Drain to Source Voltage
Gate to Source Voltage
DS
GS
V
(Note 3)
V
I
D
Drain Current − Continuous (Package Limited)
− Continuous (Silicon Limited)
− Continuous
T
= 25°C
C
A
T
= 25°C
C
T = 25°C 8 (Note 1a) 12 (Note 1b)
A
− Pulsed
40
40
P
D
Power Dissipation
T = 25°C 1.9 (Note 1a) 2.2 (Note 1b)
A
W
Power Dissipation
T = 25°C 0.7 (Note 1c) 0.9 (Note 1d)
A
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
C
Symbol
Parameter
Thermal Resistance, Junction to Ambient
Q1
Q2
Unit
65 (Note 1a) 55 (Note 1b)
180 (Note 1c) 145 (Note 1d)
°C/W
R
q
JA
JA
JC
R
R
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
q
7.5
4
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
D
I
D
= 250 mA, V = 0 V
Q1
Q2
30
30
−
−
−
−
V
DSS
GS
= 250 mA, V = 0 V
GS
Breakdown Voltage Temperature
Coefficient
I
D
I
D
= 250 mA, referenced to 25°C
= 250 mA, referenced to 25°C
Q1
Q2
−
−
14
14
−
−
mV/°C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
Q1
Q2
−
−
−
−
1
1
mA
DSS
DS
DS
GS
= 24 V, V = 0 V
GS
I
V
GS
=
20 V, V = 0 V
Q1
Q2
−
−
−
−
100
100
nA
GSS
GS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
V
GS
= V , I = 250 mA
Q1
Q2
1.0
1.0
2.3
2.3
3.0
3.0
V
DS D
= V , I = 250 mA
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
I
= 250 mA, referenced to 25°C
= 250 mA, referenced to 25°C
Q1
Q2
−
−
−5
−6
−
−
mV/°C
DVGS(th)
DTJ
D
I
D
r
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
= 10 V, I = 6 A
Q1
−
−
−
16
24
22
20
32
28
mW
DS(on)
D
= 4.5 V, I = 5 A
D
= 10 V, I = 6 A, T = 125°C
D
J
V
GS
V
GS
V
GS
= 10 V, I = 9 A
Q2
−
−
−
7.3
9.5
10
9.5
13.5
13
D
= 4.5 V, I = 7 A
D
= 10 V, I = 9 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DD
V
DD
= 5 V, I = 6 A
Q1
Q2
−
−
29
56
−
−
S
D
= 5 V, I = 9 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHZ
Q1
Q2
−
−
495
1180
660
1570
pF
pF
pF
iss
GS
C
oss
Output Capacitance
Q1
Q2
−
−
145
330
195
440
C
rss
Reverse Transfer Capacitance
Q1
Q2
−
−
20
30
30
45
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2
FDMC8200
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
DYNAMIC CHARACTERISTICS
Gate Resistance
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
R
g
f = 1 MHz
Q1
Q2
−
−
1.4
1.4
−
−
W
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Q1
Q1
Q2
−
−
11
13
20
23
ns
ns
ns
ns
nC
d(on)
V
DD
= 15 V, I = 1 A, V = 10 V,
D GS
= 6 W
R
GEN
t
r
Rise Time
Q1
Q2
−
−
3.1
4
10
10
Q2
V
DD
= 15 V, I = 1 A, V = 10 V,
D GS
= 6 W
t
Turn−Off Delay Time
Fall Time
Q1
Q2
−
−
35
38
56
60
R
GEN
d(off)
t
f
Q1
Q2
−
−
1.3
6
10
12
Q
Q
Total Gate Charge
V
GS
= 0 V to 10 V
Q1
Q2
−
−
7.3
16
10
22
g(TOT)
Q1:
V
DD
= 15 V, I = 6 A
D
Q2:
V
DD
= 15 V, I = 9 A
D
Total Gate Charge
V
GS
= 0 V to 4.5 V
Q1
Q2
−
−
3.1
7
4.3
10
nC
g(TOT)
Q1:
V
DD
= 15 V, I = 6 A
D
Q2:
V
DD
= 15 V, I = 9 A
D
Q
Q
Gate to Source Charge
Q1:
Q1
Q2
−
−
1.8
4.1
−
−
nC
nC
gs
V
DD
= 15 V, I = 6 A
D
Q2:
Gate to Drain “Miller” Charge
Q1
Q2
−
−
1
1.5
−
−
gd
V
DD
= 15 V, I = 9 A
D
DRAIN−SOURCE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
GS
V
GS
= 0 V, I = 6 A (Note 2)
Q1
Q2
−
−
0.8
0.8
1.2
1.2
V
S
= 0 V, I = 9 A (Note 2)
S
t
Reverse Recovery Time
Q1
Q1
Q2
−
−
13
21
24
34
ns
nC
rr
I = 6 A, di/dt = 100 A/mS
F
Q2
Q
Reverse Recovery Charge
Q1
Q2
−
−
2.3
5.6
10
12
rr
I = 9 A, di/dt = 100 A/mS
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a. 65°C/W when mounted on
b. 55°C/W when mounted on
2
2
a 1 in pad of 2 oz copper
a 1 in pad of 2 oz copper
c. 180°C/W when mounted on
a minimum pad of 2 oz copper
d. 145°C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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3
FDMC8200
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted)
J
40
30
20
10
0
4
V
V
= 10 V
= 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
GS
V
= 4.5 V
3
2
1
0
GS
V
GS
= 3.5 V
V
GS
= 4 V
V
= 4 V
GS
V
= 4.5 V
= 10 V
GS
V
GS
V
GS
= 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 3.5 V
1.0
GS
0.0
0.5
1.5
2.0
2.5
3.0
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
100
1.6
1.4
1.2
I
V
= 6 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
= 10 V
GS
80
60
40
20
0
I
D
= 6 A
T = 125°C
J
1.0
0.8
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source Voltage
40
40
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
10
30
20
10
0
V
DS
= 5 V
1
T = 150°C
J
T = 150°C
0.1
J
T = 25°C
J
T = 25°C
J
0.01
0.001
T = −55°C
J
T = −55°C
J
2.0
2.5
3.0
3.5
4.0
4.5
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs.
Source Current
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4
FDMC8200
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
10
8
1000
I
D
= 6 A
C
iss
V
DD
= 20 V
V
DD
= 15 V
C
oss
6
V
DD
= 10 V
100
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
10
0.1
0
2
4
6
8
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
10
25
R
= 7.5°C/W
q
JC
20
15
10
5
100 ms
V
= 10 V
GS
1 ms
1
10 ms
Limited by Package
THIS AREA IS
100 ms
1 s
10 s
DC
LIMITED BY r
DS(on)
0.1
V
GS
= 4.5 V
SINGLE PULSE
T = MAX RATED
J
0.01
R
= 180°C/W
q
JA
T = 25°C
A
0.001
0
0.01
0.1
1
10
100 200
25
50
75
100
125
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
c
Figure 9. Forward Bias Safe Operating Area
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
300
100
SINGLE PULSE
V
GS
= 10 V
R
= 180°C/W
q
JA
T = 25°C
A
10
1
0.5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDMC8200
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
0.1
DM
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t / t
0.01
SINGLE PULSE
= 180°C/W
1
2
R
q
JA
PEAK TJ = P
x Z
x R
+ T
JA A
q
q
DM
JA
0.003
10−4
10−3
10−2
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
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6
FDMC8200
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted)
J
6
40
30
20
V
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
5
4
3
2
1
0
V
GS
= 3 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
= 3.5 V
GS
V
= 4.5 V
= 10 V
GS
V
GS
= 4 V
10
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
V
GS
= 3 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 13. On−Region Characteristics
Figure 14. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
60
I
V
= 9 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
D
= 10 V
GS
50
40
30
20
10
0
I
D
= 9 A
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 15. Normalized On Resistance vs.
Junction Temperature
Figure 16. On−Resistance vs. Gate to Source Voltage
40
40
PULSE DURATION = 80 ms
V
GS
= 0 V
10
DUTY CYCLE = 0.5% MAX
30
20
10
0
V
DS
= 5 V
1
T = 150°C
J
T = 25°C
J
T = 150°C
0.1
J
T = 25°C
J
0.01
0.001
T = −55°C
J
T = −55°C
J
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 17. Transfer Characteristics
Figure 18. Source to Drain Diode Forward Voltage vs.
Source Current
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FDMC8200
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
10
8
2000
C
iss
I
D
= 9 A
1000
100
10
C
oss
V
= 15 V
DD
6
V
DD
= 10 V
V
DD
= 20 V
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
0
3
6
9
12
15
18
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
30
Q , GATE CHARGE (nC)
V
g
Figure 19. Gate Charge Characteristics
Figure 20. Capacitance vs. Drain to Source Voltage
100
10
50
R
= 4°C/W
q
JC
V
= 10 V
GS
100 ms
40
30
20
10
0
1 ms
V
GS
= 4.5 V
10 ms
1
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
T = MAX RATED
1 s
10 s
DC
Limited by Package
0.1
J
R
= 145°C/W
q
JA
T = 25°C
A
0.01
0.01
0.1
1
10
100200
25
50
75
100
125
150
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
c
Figure 21. Forward Bias Safe Operating Area
Figure 22. Maximum Continuous Drain Current vs.
Case Temperature
1000
100
10
SINGLE PULSE
V
GS
= 10 V
R
= 145°C/W
q
JA
T = 25°C
A
1
0.5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
100
1000
Figure 23. Single Pulse Maximum Power Dissipation
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FDMC8200
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) (T = 25°C, unless otherwise noted) (continued)
J
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
1
t
0.01
2
NOTES:
DUTY FACTOR: D = t / t
SINGLE PULSE
= 145°C/W
1
2
x R
R
q
JA
PEAK T = P
x Z
+ T
JA A
q
q
J
DM
JA
0.001
10−4
10−3
10−2
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 24. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
12 mm
Shipping
FDMC8200
FDMC8200
WDFN8 3x3, 0.65P
(Power 33)
13”
3000 / Tape & Reel
(Pb−Free, Halide Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3x3, 0.65P
CASE 511DE
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13621G
WDFN8 3X3, 0.65P
PAGE 1 OF 1
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相关型号：
FDMC8321L
Power Field-Effect Transistor, 22A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA, ROHS COMPLIANT, POWER 33, 8 PIN
FAIRCHILD
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