FDMC86116LZ [ONSEMI]
N 沟道，PowerTrench® MOSFET，100V，7.5A，103mΩ;
| 型号： | FDMC86116LZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100V，7.5A，103mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：576K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
Shielded Gate,
8
S
S
S
G
7
6
5
POWERTRENCH)
1
D
D
2
D
3
D
4
100 V, 7.5 A, 103 mW
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DR
FDMC86116LZ,
FDMC86116LZ-L701
FDMC3612
S
S
S
G
General Description
D
D
D
D
This N−Channel logic Level MOSFETs are produced using
onsemi‘s advanced POWERTRENCH process that incorporates
Shielded Gate technology. This process has been optimized for the
on−state resistance and yet maintain superior switching performance.
G−S zener has been added to enhance ESD voltage level.
Bottom
Top
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
FDMC3612−L701
Features
• Max R
• Max R
= 103 mW at V = 10 V, I = 3.3 A
GS D
DS(on)
PIN ASSIGNMENT
= 153 mW at V = 4.5 V, I = 2.7 A
DS(on)
GS
D
• HBM ESD Protection Level > 3 kV Typical (Note 1)
• 100% UIL Tested
S
1
8
D
• These Devices are Pb−Free and are RoHS Compliant
S
S
2
3
4
7
6
5
D
D
D
Applications
• DC−DC Conversion
G
MARKING DIAGRAM
FDMC
86116Z
ALYW
AXYKK
FDMC
86116Z
FDMC86116LZ
FDMC86116LZ−L701
FDMC86116Z = Specific Device Code
A
= Assembly Site
XY
KK
L
= 2−Digit Date Code
= 2−Digit Lot Run Traceability Code
= Wafer Lot Number
YW
= Assembly Start Week
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
1. The diode connected between gate and source serves only as protection
against ESD. No gate overvoltage rating is implied.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
March, 2023 − Rev. 4
FDMC86116LZ/D
FDMC86116LZ, FDMC86116LZ−L701
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
100
20
V
I
D
Continuous
T
C
= 25°C
7.5
A
Continuous (Note 3a)
Pulsed
T = 25°C
A
3.3
15
E
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
12
19
mJ
W
AS
P
T = 25°C
C
D
Power Dissipation (Note 3a)
T = 25°C
A
2.3
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Starting T = 25°C; N−ch: L = 1 mH, I = 5.0 A, V = 90 V, V = 10 V.
J
AS
DD
GS
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
6.5
Unit
RqJC
RqJA
Thermal Resistance, Junction to Case
°C/W
Thermal Resistance, Junction to Ambient (Note 3a)
53
2
3. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined bythe user’s board design.
q
CA
2
a. 53°C/W when mounted on a 1 in pad
b. 125°C/W when mounted on a minimum
pad of 2 oz copper
of 2 oz copper
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2
FDMC86116LZ, FDMC86116LZ−L701
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
−
−
−
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
73
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
−
−
−
−
1
mA
mA
DS
GS
I
=
20 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.8
2.2
V
GS(th)
GS
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−6
−
mV/°C
GS(th)
D
DT
J
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 3.3 A
−
−
−
−
79
105
136
11
103
153
178
−
mW
DS(on)
D
= 4.5 V, I = 2.7 A
D
= 10 V, I = 3.3 A, T = 125°C
D
J
g
FS
= 5 V, I = 3.3 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
−
−
−
−
232
45
310
60
5
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
2.4
0.7
rss
R
−
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 50 V, I = 3.3 A, V = 10 V,
GEN
−
−
−
−
−
−
−
−
4.5
1.3
10
1.4
4
10
10
20
10
6
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 50 V, I = 3.3 A
nC
nC
nC
nC
g(TOT)
g(TOT)
DD
D
= 0 V to 4.5 V, V = 50 V, I = 3.3 A
2
3
DD
D
Q
Q
= 50 V, I = 3.3 A
0.8
0.7
−
gs
gd
D
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 3.3 A (Note 4)
−
−
−
−
0.85
0.82
33
1.3
1.2
54
V
SD
GS
S
= 0 V, I = 2 A (Note 4)
GS
S
t
Reverse Recovery Time
I = 3.3 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
23
38
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
www.onsemi.com
3
FDMC86116LZ, FDMC86116LZ−L701
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
J
5
15
12
9
V
= 10 V
GS
V
= 3 V
V
= 4.5 V
GS
GS
V
GS
= 3.5 V
V
= 4 V
GS
4
3
2
1
0
V
GS
= 4 V
V
= 3.5 V
GS
6
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 4.5 V
= 10 V
GS
GS
3
V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 3 V
0
0
3
6
9
12
15
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
500
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 3.3 A
D
= 10 V
GS
400
I
D
= 3.3 A
300
200
100
0
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
15
20
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
10
12
V
DS
= 5 V
1
T = 150°C
J
9
6
3
0
0.1
T = 25°C
J
T = 150°C
J
T = 25°C
J
0.01
T = −55°C
J
T = −55°C
J
0.001
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
4
FDMC86116LZ, FDMC86116LZ−L701
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
10
8
1000
100
I
D
= 3.3 A
Ciss
V
DD
= 50 V
6
Coss
V
DD
= 25 V
V
DD
= 75 V
4
10
1
2
f = 1 MHz
= 0 V
Crss
V
GS
0
0
1
2
3
4
5
0.1
1
10
100
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
10−1
10
9
8
7
V
GS
= 0 V
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
6
5
T = 25°C
J
4
T = 125°C
J
T = 100°C
J
3
T = 25°C
J
2
T = 125°C
J
1
0.01
0.1
1
10
0
4
8
12 16 20 24 28 32 36
0.001
t , TIME IN AVALANCHE (ms)
AV
V
GS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Gate Leakage Current vs. Gate to
Source Voltage
20
10
10
8
100 ms
V
GS
= 10 V
1
6
4
2
0
1 ms
Limited by the
package
THIS AREA IS
LIMITED BY r
10 ms
DS(on)
0.1
100 ms
V
GS
= 4.5 V
SINGLE PULSE
T = MAX RATED
1 s
10 s
DC
J
R
= 125°C/W
q
JA
R
= 6.5°C/W
0.01
0.005
q
JC
T = 25°C
A
25
50
75
100
125
150
0.1
1
10
100
400
T , CASE TEMPERATURE (°C)
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain Current
vs. Case Temperature
Figure 12. Forward Bias Safe Operating Area
www.onsemi.com
5
FDMC86116LZ, FDMC86116LZ−L701
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
500
100
10
SINGLE PULSE
= 125°C/W
R
q
JA
T = 25°C
A
1
0.5
10−4
10−3
10−2
10−1
t, PULS WIDTH (s)
1
10
100
1000
Figure 13. Single pulse Maximum Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t / t
SINGLE PULSE
1
2
R
= 125°C/W
q
JA
PEAK T = PDM x Z
x R
+ T
JA A
q
q
J
JA
0.001
−2
10−4
10−3
10
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
†
Device
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDMC86116LZ
FDMC86116Z
FDMC86116Z
WDFN8 3.3x3.3, 0.65P
Power 33
13”
12 mm
3000 / Tape & Reel
(Pb−Free)
FDMC86116LZ−L701
WDFN8 3.3x3.3, 0.65P
Power 33
13”
12 mm
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13648G
WDFN8 3.3X3.3, 0.65P
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE B
DATE 02 FEB 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13650G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDMC86139P
Power Field-Effect Transistor, 4.4A I(D), 100V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN
FAIRCHILD
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