FDMC86160ET100 [ONSEMI]
N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，43A，14mΩ;
| 型号： | FDMC86160ET100 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，43A，14mΩ |
| 文件： | 总8页 (文件大小：578K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.cn
MOSFET – N ꢀꢁꢀꢂꢁꢂ
POWERTRENCH)
V
r
MAX
I MAX
D
DS
DS(on)
100 V
14 mW @ 10 V
23 mW @ 6 V
43 A
100 V, 43 A, 14 mW
ꢀꢁ 1
ꢀꢁ 1
S
FDMC86160ET100
S
S
G
ꢃꢃ
D
D
ꢀꢁNꢁꢂꢀM MOSFETꢁꢁꢃꢁonsemiꢁꢄꢅꢂꢆꢇꢈꢉꢊꢋꢃ
POWERTRENCHꢁꢌꢄꢍꢎ。ꢅꢌꢄꢆෙොꢇꢏꢈꢃꢉføӶ。
ꢀ
ࡈ
Öꢊဘꢋר
ꢌꢍई෯Պꢎͥൾ▐ꢏĮꢁR ꢁ(on)ꢁꢊၴꢃ，ū D
D
ꢂ
ꢃ
DS
WDFN8 3.3x3.3, 0.65P
(Power 33)
ୢ▨ሇ்ꢁVRM、POL
ꢁ٬
Orring ѿ்。 CASE 483 AW
ꢄꢄ
•ꢐT ⍭ൺȜᑉี：175°C
J
•ꢐꢅꢂꢆꢇ MOSFET ꢈꢉ
MARKING DIAGRAM
•ꢐᣠଇ r
•ꢐᣠଇ r
= 14 mW at V = 10 V, I = 9 A
GS D
DS(on)
= 23 mW at V = 6 V, I = 7 A
DS(on)
GS
D
ZXYYKK
FDMC
86160ET
•ꢐ▨ሇ்ꢂꢀꢈꢉ
ൾ▐ꢇĮꢊ r •ꢐꢐֿៀჵꢑ✄ꢒ
ר
RoHS ᧧Φ DS(on)
ꢅꢅ
Z
= Assembly Plant Code
•ꢐᩅჯᒳᐱ
•ꢐ
ᵅἡࡈ
XYY
KK
= 3−Digit Date Code Format
= 2−Alphanumeric Lot Run
Traceability Code
FDMC86160ET= Device Code
PIN ASSIGNMENT
S
8
D
1
2
S
S
7
6
5
D
D
D
3
4
G
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
February, 2023 − Rev. 3
FDMC86160ET100CN/D
FDMC86160ET100
MOSFET ꢆꢇꢆꢈꢉ(T = 25°C ꢄꢅꢀꢆꢇꢈ)
A
ꢇꢊ
ꢋꢌ
ꢆꢈꢉ
ꢍꢎ
V
V
V
ꢉꢊ－⁰ꢊꢋꢁ
᧥ꢊ－⁰ꢊꢋꢁ
ꢉꢊꢋἡ
100
DS
20
V
GS
I
D
43
A
− ঽ
− ঽ
− ঽ
− ꢂ
T
T
= 25°C
(Ỉ 5)
(Ỉ 5)
(Ỉ 1a)
(Ỉ 4)
(Ỉ 3)
C
= 100°C
31
C
T = 25°C
A
9
204
A
A
E
AS
ꢃꢂ↺༉்Ჟ
181
mJ
W
P
D
65
ꢄ૧
ꢄ૧
ꢄ૧
T = 25°C
C
T = 25°C
A
(Ỉ 1a)
2.8
T , T
-55 ೃ +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(ꢅᚡᝧ)
ꢆꢋꢁᡕ᪗ᣠꢇ⍭ൺꢈጸꢉꢊꢋŔꢈීꢌ，ꢍꢎꢏ்ꢐᔿꢑ。ꢆᡕ᪗Ûĵ᪩{℠ꢈ，෦ៀẵƽᚑꢍꢎꢄ்，ꢏ்ꢐොೄꢍꢎᔿꢑ，ᅑ
ڭ
ꢏ∰ሇ。
ꢈꢄꢉ
ꢇꢊ
RqJC
RqJA
ꢋꢌ
ꢆꢈꢉ
2.3
ꢍꢎ
°C/W
⋍ሇ்
(Ỉ 1)
ণೃ▏⋍ℋ
(Ỉ 1a)
53
ꢊꢋꢄꢄ(T = 25°C ꢄꢅꢀꢆꢇꢈ)
J
ꢇꢊ
ꢋꢌ
ꢌꢍꢏꢐ
ꢆꢑꢉ ꢒꢓꢉ ꢆꢇꢉ
ꢍꢎ
ꢔꢕꢄꢄ
BV
ꢉꢊ－⁰ꢊϛՏꢋꢁ
ϛՏꢋꢁꢌႆ
ߋ
ᝐ I
I
= 250 mA, V = 0 V
100
−
−
−
−
V
DSS
D
GS
= 250 mA, ꢅꢌႆꢒ25°C
73
mV/°C
DBVDSS
DTJ
D
I
⇆᧥ꢊꢋꢁꢉꢊꢋἡ
V
V
= 80 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
᧥ꢊ－⁰ꢊꢉꢋἡ
=
20 V, V = 0 V
100
nA
GS
DS
ꢖꢎꢄꢄ
V
᧥ꢊ－⁰ꢊ⃘ꢈꢋꢁ
V
I
= V , I = 250 mA
2
−
2.9
−9
4
−
V
GS(th)
GS
DS
D
᧥ꢊ－⁰ꢊ⃘ꢈꢋꢁꢌႆ
ߋ
ᝐ = 250 mA, ꢅꢌႆꢒ25°C
mV/°C
DVGS(th)
DTJ
D
r
ꢉꢊೃ⁰ꢊ∩ᇡොꢋℋ
V
GS
V
GS
V
GS
V
DD
= 10 V, I = 9 A
−
−
−
−
11.2
16
14
23
26
−
mW
DS(on)
D
= 6 V, I = 7 A
D
= 10 V, I = 9 A, T = 125°C
21
D
J
g
FS
ᵃ
ױ
ᢸො = 10 V, I = 9 A
43
S
D
ꢗꢘꢄꢄ
C
ᩣͅꢋ
V
DS
= 50 V, V = 0 V, f = 1 MHz
−
−
968
241
11
1290
320
20
pF
pF
pF
W
iss
GS
C
ᩣꢋꢋ
oss
C
֭
ױ
Āᩣꢋ ᧥ꢊℋᑷ
−
rss
R
0.1
0.6
2.5
g
www.onsemi.cn
2
FDMC86160ET100
ꢊꢋꢄꢄ(T = 25°C ꢄꢅꢀꢆꢇꢈ) (continued)
J
ꢇꢊ
ꢋꢌ
ꢌꢍꢏꢐ
ꢆꢑꢉ ꢒꢓꢉ ꢆꢇꢉ
ꢍꢎ
ꢙꢔꢄꢄ
t
ොზ៖
⛺ԧ៖
V
R
= 50 V, I = 9 A, V = 10 V,
−
−
−
−
−
−
−
−
9.7
3.6
16
19
10
30
10
22
15
−
ns
ns
d(on)
DD
D
GS
= 6 W
GEN
t
r
t
͓ឍზ៖
⛻ℝ៖
ns
d(off)
t
f
3.4
15
ns
Q
Q
ማ᧥ꢊꢋ็
ማ᧥ꢊꢋ็
ማ᧥ꢊꢋ็
V
GS
V
GS
V
DD
= 0 V ೃ 10 V, V = 50 V, I = 9 A
nC
nC
nC
nC
g(TOT)
g(TOT)
DD
D
= 0 V ೃ 6 V, V = 50 V, I = 9 A
9.8
4.4
3.5
DD
D
Q
Q
= 50 V, I = 9 A
gs
gd
D
᧥ꢊ－ꢉꢊ“݃Ҳ”ꢋ็
−
ꢏꢂ－ꢐꢂꢚꢂꢑꢄꢄ
⁰ꢊ－ꢉꢊlꢊ
ٱ
ᵃױ
ꢋꢁ V
SD
−
−
−
−
0.79
0.72
47
1.3
1.2
75
V
V
V
= 0 V, I = 9 A (Ỉ 2)
GS
S
= 0 V, I = 1.9 A (Ỉ 2)
GS
S
t
rr
֭
ױ
ቂ૭៖ ֭
ױ
ቂ૭ꢋ็ I = 9 A, di/dt = 100 A/ms
F
ns
Q
45
73
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢅᚡᝧ)
ꢄꢅꢀꢆꢇꢈ，“ꢋᷴሇ”ጸꢉꢊꢋŔ᠏ᐠꢊἫᚥꢎ⛻Ŕ
ڡ
ሇ்ꢅᝐ。ꢆई⛽
ꢎ⛻᪠ጜ，ڡ
ሇ்ꢏ்⛾“ꢋᷴሇ”ጸ ꢉᐠꢊሇ்ꢅᝐ⛽⛰ೄ。
1. R
ֶΓn൩᎕ई⛰ၓយශෘጼঋ，2 oz ᾬ⋪ƨÅ֪FR-4 ᤰ៸บෘ 1.5 x 1.5 in. Ŕጼঋ⛺Ŕꢍꢎ。R
ꢍ✈ᐗŔꢋᢿᥟᚎᙱ̾ൺ。
CA
q
q
JA
2
a. 53 ൩᎕ई2 oz ᣠ෯ 1 in
⋪ƨ⛺៖Ŕ °C/W
ᾬ
b. 125 ൩᎕ई2 oz ᣠ෯ᾬ⋪ƨ⛺
៖Ŕ °C/W
2. ꢂἫᚥ：ꢂꢎႆ：< 300 ms，Հꢏꢐ：< 2.0%。
3. E ꢒ181 mJ，Žꢑꢒꢓ T = 25°C、L = 3 mH、I = 11 A、V = 100 V、V = 10 V。ईL = 0.1 mH、I = 35 A ៖ꢔጜ 100% Ἣᚥ。
AS
J
AS
DD
GS
AS
4. ꢆ͓ꢂꢕ
ח
Ŕꢖૺꢗꢘ，ꢙꢅࣞ
11 ꢉŔ SOA ࣞ
ꢚ。 5. ᙱꢛꢜАŔঽꢋἡ¥℠nᣠꢇণꢌ，ꢝꢞঽꢋἡ෦ַ℠nꢟ⋍Å֪ꢋᷴꢠꢡꢢ✈Ŕꢋᢿᥟᚎᙱ。
www.onsemi.cn
3
FDMC86160ET100
ꢒꢓꢄꢄ(T = 25°C ꢄꢅꢀꢆꢇꢈ)
J
5
80
60
40
20
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
= 10 V
V
= 4.5 V
GS
4
3
2
1
0
V
GS
V
= 5 V
GS
V
GS
= 7 V
V
GS
= 5.5 V
V
GS
= 6 V
V
= 6 V
GS
V
GS
= 5.5 V
V
GS
= 5 V
V
= 10 V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
V
= 7 V
60
GS
0
20
40
80
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
ࣞ
1. ꢎꢘꢛꢜꢄꢄ ࣞ
2. ꢝΦӶꢖꢎꢊꢒ⛾ꢏꢂꢊꢓ٬ꢁꢂ
ꢊիꢔꢔꢕ 2.5
2.0
1.5
1.0
0.5
60
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 9 A
D
= 10 V
GS
50
I
D
= 9 A
40
30
20
10
0
T = 150°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
ࣞ
3. ꢝΦӶꢖꢎꢊꢒ⛾ꢖꢗꢔꢔꢕ ࣞ
4. ꢖꢎꢊꢒ⛾ꢁꢂ-ꢐꢂꢊիꢔꢔꢕ 100
80
PULSE DURATION = 80 ms
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
10
1
60
40
20
0
V
DS
= 5 V
T = 175°C
J
T = 25°C
J
0.1
T = 175°C
J
T = 25°C
T = −55°C
0.01
0.001
J
J
T = −55°C
J
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
ࣞ
5. ꢘᕂꢄꢄ ࣞ
6. ꢐꢂ-ꢏꢂꢚꢂꢑᵃױ
ꢊի⛾ꢐꢊꢓꢔꢔꢕ www.onsemi.cn
4
FDMC86160ET100
ꢒꢓꢄꢄ(T = 25°C ꢄꢅꢀꢆꢇꢈ)
J
10
8
10000
1000
V
DD
= 50 V
I
D
= 9 A
Ciss
V
DD
= 25 V
V
DD
= 75 V
6
Coss
100
10
1
4
2
Crss
f = 1 MHz
= 0 V
V
GS
0
0
4
8
12
16
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
100
175
1
Q , GATE CHARGE (nC)
V
g
ࣞ
7. ꢁꢂꢊꢙꢄꢄ ࣞ
8. ꢊ⛾ꢏꢂ-ꢐꢂꢊիꢔꢔꢕ 100
10
1
50
40
30
20
10
0
V
GS
= 10 V
T = 25°C
J
T = 100°C
J
V
GS
= 6 V
T = 150°C
J
R
= 2.3°C/W
q
JC
0.01
0.1
1
10
100
25
50
75
100
125
150
0.001
t
, TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
ࣞ
9. ꢚꢛꢎꢊዿꢙꢔꢉѻ ࣞ
10. ꢆꢇꢜꢝꢏꢂꢊꢓ⛾ꢗꢔꢔꢕ 500
10000
100
10
1
10 ms
1000
100
10
THIS AREA IS
LIMITED BY r
100 ms
DS(on)
SINGLE PULSE CURVE
T = MAX RATED BENT TO
1 ms
SINGLE PULSE
J
R
T
= 2.3°C/W
= 25°C
MEASURED
DATA
R
T
= 2.3°C/W
= 25°C
10 ms
DC
q
JC
q
JC
C
C
0.1
0.1
1
10
100
500
10−5
10−4
10−3
10−2
10−1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
ࣞ
11. ᵃױ
ȯիꢞꢟꢠꢡꢛ ࣞ
12. ꢍꢢꢞꢣꢆꢇꢤꢟ www.onsemi.cn
5
FDMC86160ET100
ꢒꢓꢄꢄ(T = 25°C ꢄꢅꢀꢆꢇꢈ)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
PDM
0.1
0.05
0.1
0.01
0.02
0.01
t1
t2
Ỉ：
Z
(t) = r(t) x R
= 2.3°C/W
q
q
JC
SINGLE PULSE
JC
R
q
JC
ꢣꢈT = P
x Z (t) + T
q
JC C
J
DM
Duty Cycle: D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (s)
ࣞ
13. ꢖꢠꢥꢡꢘꢈꢦꢅꢧꢢ ꢨꢣꢝꢤ⛾ꢈꢥꢩꢪ
ꢫꢐ
†
ꢫꢐꢝꢤ
ꢨꢣ
ꢬꢭꢮ
ꢯꢰ
Shipping
FDMC86160ET100
FDMC86160ET
WDFN8 3.3x3.3, 0.65P
Power 33
13”
12 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3X3.3, 0.65P
CASE 483AW
ISSUE A
DATE 10 SEP 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
XXXX
AYWW
WW = Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13672G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
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