FDMC86244 [ONSEMI]
N 沟道，Power Trench® MOSFET，150V，9.4A，134mΩ;
| 型号： | FDMC86244 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，150V，9.4A，134mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：515K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – N-Channel,
Shielded Gate,
POWERTRENCH)
150 V, 9.4 A, 134 mW
FDMC86244,
FDMC86244-L701
www.onsemi.com
8
7
6
5
S
S
S
G
General Description
This N−Channel MOSFET is produced using ON Semiconductor‘s
advanced POWERTRENCH process that incorporates Shielded Gate
technology. This process has been optimized for the on−state
resistance and yet maintain superior switching performance.
1
D
D
D
D
2
3
4
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DR
Features
FDMC86244
• Max r
• Max r
= 134 mW at V = 10 V, I = 2.8 A
GS D
S
DS(on)
S
S
G
= 186 mW at V = 6 V, I = 2.4 A
DS(on)
GS
D
• Low Profile − 1 mm Max in Power 33
• 100% UIL Tested
D
D
D
D
Bottom
Top
• These Devices are Pb−Free and are RoHS Compliant
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
Applications
FDMC86244−L701
• DC − DC Conversion
MARKING DIAGRAM
FDMC
86244
ALYW
ON AXYKK
FDMC
86244
FDMC86244
FDMC86244−L701
FDMC86244 = Specific Device Code
A
= Assembly Site
XY
KK
L
= 2−Digit Date Code
= 2−Digit Lot Run Traceability Code
= Wafer Lot Number
YW
= Assembly Start Week
PIN ASSIGNMENT
S
1
8
D
S
S
2
3
4
7
6
5
D
D
D
G
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
March, 2021 − Rev. 3
FDMC86244/D
FDMC86244, FDMC86244−L701
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
150
20
V
I
D
Continuous
T
C
= 25°C
9.4
A
Continuous (Note 2a)
Pulsed
T = 25°C
A
2.8
12
E
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
12
26
mJ
W
AS
P
T = 25°C
C
D
Power Dissipation (Note 2a)
T = 25°C
A
2.3
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting T = 25°C; N−ch: L = 1.0 mH, I = 5.0 A, V = 135 V, V = 10 V.
J
AS
DD
GS
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
4.7
Unit
RqJC
RqJA
Thermal Resistance, Junction to Case
°C/W
Thermal Resistance, Junction to Ambient (Note 2a)
125
2
2. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined bythe user’s board design.
q
CA
2
a. 53°C/W when mounted on a 1 in pad
b. 125°C/W when mounted on a minimum
pad of 2 oz copper
of 2 oz copper
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2
FDMC86244, FDMC86244−L701
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
150
−
−
−
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
106
mV/°C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120 V, V = 0 V
−
−
−
−
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2
2.6
4
V
GS(th)
GS
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−9
−
mV/°C
GS(th)
D
DT
J
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 2.8 A
−
−
−
−
105
120
199
8
134
186
254
−
mW
DS(on)
D
= 6 V, I = 2.4 A
D
= 10 V, I = 2.8 A, T = 125°C
D
J
g
FS
= 10 V, I = 2.8 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 75 V, V = 0 V, f = 1 MHz
−
−
−
257
32
345
45
5
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
1.8
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 75 V, I = 2.8 A, V = 10 V,
GEN
−
−
−
−
−
−
−
−
5.3
1.5
9.9
2.3
4.2
2.4
1.1
1.0
11
10
20
10
5.9
3.4
−
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 75 V, I = 2.8 A
nC
nC
nC
nC
g(TOT)
g(TOT)
DD
D
= 0 V to 5 V, V = 75 V, I = 2.8 A
DD
D
Q
Q
= 75 V, I = 2.8 A
D
gs
gd
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 2.8 A (Note 3)
−
−
−
−
0.81
0.79
48
1.3
1.2
76
V
SD
GS
S
= 0 V, I = 2 A (Note 3)
GS
S
t
Reverse Recovery Time
I = 2.8 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
38
61
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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3
FDMC86244, FDMC86244−L701
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
5
12
9
V
= 6 V
V
= 10 V
V
= 4 V
V
= 4.5 V
GS
GS
GS
GS
V
= 5 V
GS
V
= 5.5 V
GS
4
3
2
1
0
V
GS
= 5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
6
V
V
= 5.5 V
= 10 V
GS
V
= 4.5 V
GS
3
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
V
GS
= 4 V
V
GS
= 6 V
0
0
3
6
9
12
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
500
2.4
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 2.8 A
D
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
= 10 V
GS
400
I
D
= 2.8 A
300
200
100
0
T = 125°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
12
20
10
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
9
T = 150°C
J
1
V
DS
= 5 V
T = 150°C
J
T = 25°C
J
6
3
0
0.1
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
0.001
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC86244, FDMC86244−L701
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
1000
I
D
= 2.8 A
V
DD
= 50 V
C
iss
V
= 75 V
DD
100
10
1
6
V
= 100 V
Coss
DD
4
2
f = 1 MHz
= 0 V
V
GS
Crss
0
0
1
2
3
4
5
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
100
Q , GATE CHARGE (nC)
g
V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
10
10
R
= 4.7°C/W
q
JC
8
6
4
2
0
8
6
4
2
V
= 10 V
GS
T = 25°C
J
V
GS
= 6 V
T = 100°C
J
T = 125°C
J
1
0.01
0.1
1
2
25
50
75
100
125
150
0.001
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
20
10
1000
100
100 ms
1
0.1
1 ms
10 ms
100 ms
THIS AREA IS
LIMITED BY r
10
DS(on)
1 s
10 s
DC
SINGLE PULSE
0.01
SINGLE PULSE
R = 125°C/W
q
JA
T = 25°C
A
T = MAX RATED
J
R
= 125°C/W
q
JA
1
0.5
T = 25°C
A
0.001
10−4 10−3 10−2 10−1
1
10
0.1
1
10
100
500
100 1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMC86244, FDMC86244−L701
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
PDM
t1
t2
NOTES:
SINGLE PULSE
DUTY FACTOR: D = t / t
1
2
R
= 125°C/W
q
JA
PEAK T = PDM x Z
x R
+ T
JA A
q
q
J
JA
0.001
−2
10−4
10−3
10
10−1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
†
Device
FDMC86244
Device Marking
Package Type
Reel Size
Tape Width
Shipping
FDMC86244
FDMC86244
WDFN8 3.3x3.3, 0.65P
Power 33
13”
12 mm
3000 / Tape & Reel
(Pb−Free)
FDMC86244−L701
WDFN8 3.3x3.3, 0.65P
Power 33
13”
12 mm
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.com
6
FDMC86244, FDMC86244−L701
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DR
ISSUE A
www.onsemi.com
7
FDMC86244, FDMC86244−L701
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DQ
ISSUE O
www.onsemi.com
8
FDMC86244, FDMC86244−L701
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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