FDMC86260ET150 [ONSEMI]
150 V N 沟道 Power Trench® MOSFET;
| 型号： | FDMC86260ET150 |
| 厂家： | 
ONSEMI |
| 描述： | 150 V N 沟道 Power Trench® MOSFET |
| 文件： | 总8页 (文件大小：642K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.cn
MOSFET – N ꢀꢀ,
POWERTRENCH)
V
R
MAX
I MAX
D
DS
DS(ON)
150 V
34 mW @ 10 V
44 mW @ 6 V
25 A
150 V, 25 A, 34 mW
ჵ௪ 1
S
FDMC86260ET150
ꢁꢁ
ჵ௪ 1
S
S
G
D
D
D
D
ꢀꢁNꢁꢂᬣꢁMOSFETꢁᲗꢃꢄꢅꢆꢁ(onsemi) ᪫ꢇꢁPOWERTRENCH
ꢈꢉꢊꢋ, ꢌꢍꢎ᪫ꢈꢉꢏꢐꢑꢒꢓ℠ꢔꢕℝꢖꢗꢘℋꢙꢚꢛ
ꢜꢝꢞꢟꢠꢡꢢꢣꢤꢇ。
ၵ
⍆
WDFN8 3.3 y 3.3, 0.65P
(Power 33)
ꢂꢃ
CASE 483AW
•ꢥT ⍭ꢣȜᑉี: 175°C
J
•ꢥꢒꢓR
•ꢥꢒꢓR
= 34 mW at V = 10 V, I = 5.4 A
GS D
DS(on)
D
S
= 44 mW at V = 6 V, I = 4.8 A
8
7
1
2
DS(on)
GS
D
•ꢥ▨ꢠꢡꢂᬣᑠᤏ
ൾ▐ᥡꢖꢇR •ꢥ100% ট᪗ UIL ꢦꢧ
•ꢥꢨꢩꢑꢪᾕꢋꢫ
DS(on)
S
S
D
D
3
4
6
5
•ꢥꢬꢭ RoHS ꢮꢯ
G
D
ꢄꢂ
N-CHANNEL MOSFET
MARKING DIAGRAM
•ꢥDC−DC ꢰꢱ
MOSFET ꢅꢆꢃꢇꢈ(T = 25°C unless otherwise noted)
A
ꢄꢉ
ꢊꢋ
ꢃꢇꢈ
150
ꢌꢍ
V
ZXYYKK
FDMC
86260ET
V
V
ꢀꢁ－⁰ꢁꢂꢀ
᧥ꢁ－⁰ꢁꢂꢀ
ꢀꢁꢂἡ
DS
20
V
GS
I
D
A
ꢁঽ, T = 25°C (Ỉ 5)
25
18
5.4
116
C
C
A
ꢁঽ, T = 100°C (Ỉ 5)
ꢁঽ, T = 25°C (Ỉꢂ1a)
Z
XYY
KK
= Assembly Plant Code
= 3−Digit Date Code Format
= 2−Alphanumeric Lot Run
Traceability Code
ꢁꢃ (Ỉ 4)
ꢄꢃ↺༉்Ჟ (Ỉ 3)
ꢅ૧
E
AS
121
mJ
W
P
D
FDMC86260ET = Specific Device Code
ꢁT = 25°C
65
2.8
C
ꢁT = 25°C (Ỉ 1a)
A
ORDERING INFORMATION
T , T
࿅ꢆꢇസꢈণꢃීꢉ
−55 to
+175
°C
J
STG
†
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(ꢊᚡᝧ)
Device
Package
Shipping
FDMC86260ET150
PQFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
ୢꢂꢀᡕ᪗ᣠଇ⍭ൺꢋጸꢌꢍꢎŔꢋීꢉ，ꢏꢐꢑ்ꢒᔿꢓ。ୢᡕ᪗Ûĵ
᪩{℠ꢋ，෦ៀẵƽᚑꢏꢐꢅ்，ꢑ்ꢒොೄꢏꢐᔿꢓ，ᅑ
ڭ
ꢑ∰ሇ。 †For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ꢎꢃꢅ
ꢄꢉ
ꢊꢋ
ণೃꢄ⋍ℋꢂ(Ỉ 1)
ণೃ▏⋍ℋꢂ(Ỉ 1a)
ꢃꢇꢈ
2.3
ꢌꢍ
°C/W
°C/W
R
q
JC
R
53
q
JA
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
FDMC86260ET150CN/D
March, 2023 − Rev. 3
FDMC86260ET150
ꢆꢏꢂꢃ (T = 25°C ℴ∮
׆
ᣩᛄ) J
ꢄꢉ
ꢊꢋ
ꢐꢇꢑꢒ
ꢅꢓꢈ ꢔꢕꢈ ꢅꢆꢈ
ꢌꢍ
ꢖꢗꢂꢃ
BV
ꢀꢁ－⁰ꢁϛՏꢂꢀ
I
I
= 250 mA, V = 0 V
150
−
−
−
V
DSS
D
GS
ϛՏꢂꢀꢃႆ
ߋ
ᝐ = 250 mA, ꢊꢃႆꢔto 25°C
−
110
mV/°C
DBVDSS
DTJ
D
I
⇆᧥ꢁꢂꢀꢀꢁꢂἡ
V
V
= 120 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
᧥ꢁ－⁰ꢁꢀꢂἡ
=
20 V, V = 0 V
100
nA
GS
DS
ꢘꢈꢂꢃ
V
᧥ꢁ－⁰ꢁ⃘ꢋꢂꢀ
V
I
= V , I = 250 mA
2
2.7
4
V
GS(th)
GS
DS
D
᧥ꢁ－⁰ꢁ⃘ꢋꢂꢀꢃႆ
ߋ
ᝐ = 250 mA, ꢊꢃႆꢔto 25°C
−
−9
−
mV/°C
DVGS(th)
DTJ
D
R
ꢀꢁೃ⁰ꢁ∩ᇡොꢂℋ
V
GS
V
GS
V
GS
V
DD
= 10 V, I = 5.4 A
−
−
−
−
27
31
55
19
34
44
69
−
mW
DS(on)
D
= 6 V, I = 4.8 A
D
= 10 V, I = 5.4 A, T = 125°C
D
J
g
FS
ᵃ
ױ
ᢸො = 10 V, I = 5.4 A
S
D
ꢙꢚꢂꢃ
C
ᩣͅꢂ
V
DS
= 75 V, V = 0 V, f = 1 MHz
−
−
1000
105
4.8
1330
140
10
pF
pF
pF
W
iss
GS
C
ᩣꢎꢂ
oss
C
֭
ױ
Āᩣꢂ ᧥ꢁℋᑷ
−
rss
R
0.1
0.6
1.8
g
ꢛꢖꢂꢃ
t
ොზ៖
⛺ԧ៖
V
= 75 V, I = 5.4 A, V = 10 V,
GEN
−
−
−
−
−
9.5
2
19
10
30
10
21
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
͓ឍზ៖
⛻ℝ៖
17
3.3
15
d(off)
t
f
Q
ማ᧥ꢁꢂ็
V
= 0 V ೃ 10 V, V = 75 V,
g(TOT)
GS
DD
I
= 5.4 A
D
V
D
= 0 V ೃ 6 V, V = 75 V,
−
9.7
14
nC
GS
DD
I
= 5.4 A
Q
Q
ማ᧥ꢁꢂ็
V
DD
V
DD
= 75 V, I = 5.4 A
−
−
4.0
3.1
−
−
nC
nC
gs
D
᧥ꢁ－ꢀꢁꢂ“݃Ҳ” ꢂ็
= 75 V, I = 5.4 A
D
gd
www.onsemi.cn
2
FDMC86260ET150
ꢆꢏꢂꢃ (T = 25°C ℴ∮
׆
ᣩᛄ) (continued) J
ꢄꢉ
ꢊꢋ
ꢐꢇꢑꢒ
ꢅꢓꢈ ꢔꢕꢈ ꢅꢆꢈ
ꢌꢍ
ꢜꢝ－⁰ꢝlꢝꢉꢂꢃ
V
⁰ꢁ－ꢀꢁlꢁ
ٱ
ᵃױ
ꢂꢀ −
−
−
−
0.77
0.72
64
1.3
1.2
V
V
V
= 0 V, I = 5.4 A (Ỉꢂ2)
S
SD
GS
= 0 V, I = 1.9 A (Ỉꢂ2)
GS
S
t
֭
ױ
ቂ૭៖ ֭
ױ
ቂ૭ꢂ็ I = 5.4 A, di/dt = 100 A/ms
F
102
137
ns
rr
Q
85
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢊᚡᝧ)
ℴ∮
׆
ᣩᛄ，“ꢂᷴሇ”ጸꢌꢍꢎŔ᠏ᐠꢍἫᚥꢐ⛻Ŕڡ
ሇ்ꢊᝐ。ୢई⛽
ꢐ⛻᪠ጜ，ڡ
ሇ்ꢑ்⛾“ꢂᷴሇ”ጸ ꢌᐠꢍሇ்ꢊᝐ⛽⛰ೄ。
Ỉዯ:
1
R
ֶΓn൩᎕ई⛰ၓយශෘጼঋ, 2oz ᾬ⋪ƨÅ֪ꢂFR−4 ᤰ៸บෘ1.5 x 1.5 in. Ŕጼঋ⛺Ŕꢏꢐ。R
ꢅ✈ᐗŔꢂᢿᥟᚎᙱ̾ൺ。
CA
q
q
JA
2
a) 53 ൩᎕ईꢂ2 oz ᣠ෯1 in
ᾬ⋪ƨ⛺៖Ŕꢂ°C/W
b) 125 ൩᎕ईꢂ2 oz ᣠ෯ᾬ⋪ƨ⛺
៖Ŕꢂ°C/W
2
3
4
5
ꢃἫᚥ：ꢃꢆႆ: < 300 ms，Հꢇꢈ: < 2.0%。
E ꢔ121 mJ，ŽꢉꢊꢋT = 25°C、L = 3 mH、I = 9 A、V = 150 V、V = 10 V。100% ꢌ᪗Ἣᚥꢂ(L = 0.1 mH, I = 22 A)。
AS
J
AS
DD
GS
AS
ᣩ͓ꢃꢍ
ח
Ŕꢎꢏꢐꢑ，ꢒꢊࣞ
ꢂ11 ꢌŔꢂSOA ࣞ
ꢓ。 ᙱꢔꢕАŔঽꢂἡ¥℠nᣠଇণꢃ, ꢖꢗঽꢂἡ෦ַ℠nꢘ⋍Å֪ꢂᷴꢙꢚꢛ✈Ŕꢂᢿᥟᚎᙱ。
www.onsemi.cn
3
FDMC86260ET150
ꢔꢕꢂꢃ
(T = 25°C ℴ∮
׆
ᣩᛄ) J
48
36
24
4
V
= 10 V
V
GS
= 5.5 V
GS
V
GS
= 4.5 V
V
GS
= 6 V
V
GS
= 5 V
3
V
GS
= 5.5 V
V
GS
= 5 V
2
V
GS
= 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
12
0
1
0
V = 10 V
GS
V
= 4.5 V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
5
0
12
24
I , Drain Current (A)
36
48
V
, Drain to Source Voltage (V)
DS
D
ࣞ
1. ꢈꢚԚিꢂꢃ ࣞ
2. ᧧ΦӶꢘꢈꢆꢊ⛾ꢜꢝꢆἡ٬᧥ꢝ
ꢆիꢋꢖꢌ 3.0
2.5
2.0
1.5
120
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 5.4 A
D
= 10 V
GS
I
D
= 5.4 A
90
60
T = 150°C
J
30
0
1.0
0.5
T = 25°C
J
10
−50 −25
0
25 50 75 100 125 150 175
3
4
5
6
7
8
9
−75
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
ࣞ
3. ᧧ΦӶꢘꢈꢆꢊ⛾ꢍꢞꢋꢖꢌ ࣞ
4. ꢘꢈꢆꢊ⛾᧥ꢝꢟ-ꢟ⁰ꢝꢆիꢋꢖꢌ 100
10
1
48
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
36
24
12
V
DS
= 5 V
T = 175°C
J
T = 25°C
J
0.1
T = 175°C
J
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
ࣞ
5. ꢎᕂꢂꢃ ࣞ
6. ⁰ꢝꢟ-ꢟꢜꢝlꢝꢉᵃױ
ꢆի⛾⁰ꢆἡꢋꢖꢌ www.onsemi.cn
4
FDMC86260ET150
ꢔꢕꢂꢃ(continued)
(T = 25°C ℴ∮
׆
ᣩᛄ) J
10
8
2000
1000
I
D
= 5.4 A
C
C
iss
V
= 50 V
DD
V
= 75 V
DD
100
6
4
2
0
oss
V
DD
= 100 V
10
1
C
f = 1 MHz
= 0 V
rss
V
GS
8
12
16
0
4
0.1
10
, Drain to Source Voltage (V)
100
1
Q , Gate Charge (nC)
V
DS
g
ࣞ
7. ᧥ꢝꢆꢏꢂꢃ ࣞ
8. ꢆ⛾ꢜꢝꢟ-ꢟ⁰ꢝꢆիꢋꢖꢌ 30
50
10
25
20
15
T = 25°C
J
V
GS
= 10 V
V
GS
= 6 V
T = 100°C
J
10
5
T = 150°C
J
R
= 2.3°C/W
q
JC
0
1
0.001
0.01
0.1
1
10 20
50
75
100
125
150
175
25
t , Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
ࣞ
9. ꢐꢑꢍꢆዿꢛꢖꢅѻ ࣞ
10. ꢅꢆꢒꢓꢜꢝꢆἡ⛾ꢠꢞꢋꢖꢌ 300
20000
10000
SINGLE PULSE
100
10
1
R
= 2.3°C/W
q
JC
T
C
= 25°C
10 ms
1000
100
10
100 ms
THIS AREA IS
LIMITED BY R
DS(on)
SINGLE PULSE
T = MAX RATED
1 ms
10 ms
DC
0.1
J
CURVE BENT TO
MEASURED DATA
R
= 2.3°C/W
q
JC
T
C
= 25°C
0.01
−5
−4
−3
−2
−1
10
1
0.1
10
10
10
10
10
1
500
100
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
ࣞ
12. ꢌꢦꢔꢧꢅꢆꢨꢕ ࣞ
11. ᵃױ
ꢡիꢢꢣꢤꢥԚ www.onsemi.cn
5
FDMC86260ET150
ꢔꢕꢂꢃ(continued)
(T = 25°C ℴ∮
׆
ᣩᛄ) J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t
1
t
2
Ỉ:
Z
(t) = r(t) × R
= 2.3°C/W
0.01
q
q
JC
JC
SINGLE PULSE
R
q
JC
ꢜꢋ T = P
× Z (t) + T
q
JC C
J
DM
Հꢇꢈ, D = t / t
1
2
0.001
−5
−4
−3
−2
−1
10
10
10
10
10
1
t, Rectangular Pulse Duration (s)
ࣞ
13. ꢍꢖꢩꢠꢗꢚꢎꢪꢄꢫꢘ POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.cn
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3X3.3, 0.65P
CASE 483AW
ISSUE A
DATE 10 SEP 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
XXXX
AYWW
WW = Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13672G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
FDMC86320
Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MLP, 8 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明