FDMC86324 [ONSEMI]
N 沟道，Power Trench® MOSFET，80V，20A，23mΩ;
| 型号： | FDMC86324 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，80V，20A，23mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：417K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DS
DS(ON)
80 V
23 mW @ 10 V
37 mW @ 6 V
20 A
80 V, 20 A, 23 mW
Pin 1
FDMC86324
General Description
S
S
S
G
This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that has been especially tailored
to minimize the on−state resistance and yet maintain superior
switching performance.
D
D
D
D
Top
Bottom
PQFN8 3.3 y 3.3, 0.65P
CASE 483AK
Features
• Max R
• Max R
= 23 mW at V = 10 V, I = 7 A
GS D
DS(on)
= 37 mW at V = 6 V, I = 4 A
DS(on)
GS
D
D
4
3
2
1
5
G
• Low Profile − 1 mm Max in Power 33
• 100% UIL Tested
D
D
6
7
S
S
S
• Pb−Free, Halide Free and RoHS Compliant
Applications
• DC−DC Conversion
D
8
N-CHANNEL MOSFET
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Drain−Source Voltage
Value
80
Unit
V
V
DS
V
GS
Gate−Source Voltage
20
V
I
D
Drain Current
A
ZXYYKK
FDMC
86324
– Continuous (Package Limited)
– Continuous (Silicon Limited)
– Continuous (Note 1a)
– Pulsed
T
T
A
= 25°C
= 25°C
20
30
7
C
C
T = 25°C
30
E
Single Pulse Avalanche Energy (Note 3)
72
mJ
W
AS
Z
= Assembly Plant Code
P
Power Dissipation
T
= 25°C
C
41
2.3
D
XYY
KK
= 3−Digit Date Code Format
= 2−Alphanumeric Lot Run Traceability
Code
Power Dissipation (Note 1a)
T = 25°C
A
T , T
Operating and Storage Junction
Temperature Range
–55 to
+150
°C
J
STG
FDMC86324 = Specific Device Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
†
A
Device
Package
Shipping
Symbol
Parameter
Value
Unit
FDMC86324
PQFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
R
Thermal Resistance,
Junction to Case
3
°C/W
q
JC
R
Thermal Resistance,
Junction to Ambient (Note 1a)
53
°C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
January, 2023 − Rev. 3
FDMC86324/D
FDMC86324
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
80
−
−
−
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
69
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 64 V, V = 0 V
−
−
−
−
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
2.0
3.1
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−9
−
mV/°C
GS(th)
J
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DD
= 10 V, I = 7 A
−
−
−
−
19.1
25.5
32.5
19
23
37
40
−
mW
DS(on)
D
= 6 V, I = 4 A
D
= 10 V, I = 7 A, T = 125°C
D
J
g
FS
= 10 V, I = 7 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
−
−
−
−
725
175
15
965
235
25
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.5
−
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 50 V, I = 7 A, V = 10 V,
GEN
−
−
−
−
−
8
4
17
10
25
10
18
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
14
4
d(off)
t
f
Q
Total Gate Charge
V
= 0 V to 10 V, V = 50 V,
13
g(TOT)
GS
DD
I
= 7 A
D
V
D
= 0 V to 5 V, V = 50 V,
−
8
11
nC
GS
DD
I
= 7 A
Q
Q
Gate to Source Charge
V
DD
V
DD
= 50 V, I = 7 A
−
−
3.7
3.6
−
−
nC
nC
gs
D
Gate to Drain “Miller” Charge
= 50 V, I = 7 A
D
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 7 A (Note 2)
−
−
−
−
0.81
0.75
44
1.3
1.2
70
V
SD
GS
S
= 0 V, I = 2 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 7 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
40
65
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
b) 125°C/W when mounted on
a) 53°C/W when mounted on
2
a minimum pad of 2 oz. copper.
a 1 in pad of 2 oz. copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C; N-ch: L = 1 mH, I = 12 A, V = 72 V, V = 10 V.
J
AS
DD
GS
www.onsemi.com
2
FDMC86324
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
5
30
25
20
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
= 4.5 V
GS
4
3
2
V
= 5.5 V
= 5 V
GS
V
= 5 V
GS
V
V
= 10 V
= 6 V
V
GS
= 5.5 V
GS
15
10
5
V
GS
GS
V
GS
= 6 V
1
0
V
GS
= 4.5 V
V
GS
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
80
I
V
= 7 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 7 A
D
= 10 V
GS
70
60
50
40
30
T = 125°C
J
1.2
1.0
20
10
0.8
0.6
T = 25°C
J
10
25 50
75 100 125 150
4
5
6
8
9
−75 −50 −25
0
7
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance
Figure 4. On−Resistance vs. Gate to Source
vs. Junction Temperature
Voltage
60
10
30
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
25
20
V
DS
= 5 V
T = 150°C
J
T = 25°C
J
1
15
10
5
0.1
T = 150°C
J
T = −55°C
J
T = 25°C
J
0.01
T = −55°C
J
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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3
FDMC86324
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C unless otherwise noted)
J
10
8
1000
I
D
= 7 A
C
iss
V
DD
= 25 V
V
DD
= 50 V
6
4
2
0
C
oss
V
= 75 V
DD
100
f = 1 MHz
C
V
GS
= 0 V
rss
10
0.1
0
2
4
6
8
12
14
10
, Drain to Source Voltage (V)
80
1
10
Q , Gate Charge (nC)
V
DS
g
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
10
9
30
25
20
15
10
5
8
7
6
T = 25°C
J
5
4
V
GS
= 10 V
Limited by Package
T = 100°C
J
3
V
GS
= 6 V
2
T = 125°C
J
R
= 3°C/W
q
JC
0
1
0.01
0.1
10
30
1
25
50
75
100
125
150
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
50
1000
100
10
V
GS
= 10 V
10
1
100 ms
1 ms
10 ms
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
0.1
0.01
1 s
T = MAX RATED
SINGLE PULSE
= 125°C/W
T = 25°C
A
J
R
= 125°C/W
10 s
DC
R
q
JA
q
JA
1
T = 25°C
A
0.5
10
−4
−3
−2
−1
0.01
0.1
10
, Drain to Source Voltage (V)
10
10
10
1
10
100 1000
100
500
1
V
DS
t, Pulse Width (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
FDMC86324
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
= 125°C/W
1
2
Peak T = P
× Z
× R + T
q
JA JA A
R
q
J
DM
q
JA
0.001
−3
−2
−1
−4
10
10
10
1
10
100
1000
10
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X3.3, 0.65P
CASE 483AK
ISSUE B
DATE 12 OCT 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13660G
PQFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
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© Semiconductor Components Industries, LLC, 2019
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