FDMC86340ET80 [ONSEMI]
N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，68A，6.5mΩ;
| 型号： | FDMC86340ET80 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，68A，6.5mΩ |
| 文件： | 总8页 (文件大小：622K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.cn
MOSFET – N ꢀꢁꢀꢂꢃꢄ
POWERTRENCH)
V
r
MAX
I MAX
D
DS
DS(on)
80 V
6.5 mW @ 10 V
8.5 mW @ 8 V
68 A
80 V, 68 A, 6.5 mW
ꢀꢁ 1
ꢀꢁ 1
S
FDMC86340ET80
S
S
G
ꢅꢆ
D
D
ꢀ Nꢁꢂꢀ MOSFETꢁꢁꢃꢄꢅꢆ (onsemi) ꢇꢈꢉꢊꢋꢌꢍꢎꢏ
ꢐꢁPOWERTRENCHꢁꢑꢒꢓꢔ。ꢕꢑꢒꢂꢖꢗꢘꢃꢙꢚꢛ，ꢜ
ꢝꢞꢟꢠꢡꢢꢣꢤ。
D
D
ꢂ
ꢃ
WDFN8 3.3x3.3, 0.65P
(Power 33)
ꢇꢁ
CASE 483 AW
•ꢥꢦꢧꢄꢨ T ꢩ 175°C
J
•ꢥꢈꢉꢊꢋ MOSFET ꢌꢍ
•ꢥꢪꢫꢬ r
•ꢥꢪꢫꢬ r
= 6.5 mW, ꢭ V = 10 V, I = 14 A ꢮ
GS D
MARKING DIAGRAM
DS(on)
= 8.5 mW, ꢭ V = 8 V, I = 12 A ꢮ
DS(on)
GS
D
•ꢥꢅꢣꢤꢂꢀꢌꢍꢜꢯꢰꢋꢱꢎ r
•ꢥꢲꢳꢴꢵꢆꢔꢶ
DS(on)
FDMC
86340ET
AYWW
•ꢥꢷꢸ RoHS ꢹꢺ
ꢂꢈ
FDMC86340ET = Device Code
•ꢥDC−DC ꢻꢼ
A
= Assembly Location
= Year
Y
WW
= Work Week
PIN ASSIGNMENT
S
8
D
1
2
S
S
7
6
5
D
D
D
3
4
G
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
February, 2023 − Rev. 3
FDMC86340ET80CN/D
FDMC86340ET80
MOSFET ꢃꢄꢉꢅ(T = 25°C ꢄꢅꢀꢆꢇꢈ)
A
ꢊꢆ
ꢇꢈ
ꢉꢅꢉ
ꢊꢋ
V
V
V
ꢉꢊ－⁰ꢊꢋꢁ
᧥ꢊ－⁰ꢊꢋꢁ
ꢉꢊꢋἡ
80
DS
20
V
GS
I
D
68
A
− ঽ
− ঽ
− ঽ
− ꢂ
T
T
= 25°C
(Ỉ 5)
(Ỉ 5)
(Ỉ 1a)
(Ỉ 4)
(Ỉ 3)
C
= 100°C
48
C
T = 25°C
A
14
316
E
AS
ꢃꢂ↺༉்Ჟ
ꢄ╧૧ᝃ
216
mJ
W
P
D
65
T
C
= 25°C
ꢄ╧૧ᝃ
T = 25°C
A
(Ỉ 1a)
2.8
T , T
࿅ꢅꢆസꢇণꢌීꢈ
-55 ೃ +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
(ꢉᚡᝧ)
ୢꢋꢁᡕ᪗ᣠଇ⍭ൺꢊጸꢋꢌꢍŔꢊීꢈ，ꢎꢏꢐ்ꢑᔿꢒ。ୢᡕ᪗Ûĵ᪩{℠ꢊ，෦ៀẵƽᚑꢎꢏꢄ்，ꢐ்ꢑොೄꢎꢏᔿꢒ，ᅑ
ڭ
ꢐ∰ሇ。
ꢋꢁꢌ
ꢊꢆ
RqJC
RqJA
ꢇꢈ
ꢉꢅꢉ
2.3
ꢊꢋ
°C/W
ণೃŔ⋍ℋ
ণೃ▏Ŕ⋍ℋ
(Ỉ 1)
(Ỉ 1a)
53
ꢍꢎꢇꢁꢏꢌꢍ(T = 25°C ꢄꢅꢀꢆꢇꢈ)
J
ꢊꢆ
ꢇꢈ
ꢐꢑꢒꢎ
ꢃꢏꢉ ꢐꢑꢉ ꢃꢄꢉ
ꢊꢋ
ꢒꢓꢇꢁ
BV
ꢉꢊ－⁰ꢊϛՏꢋꢁ
ϛՏꢋꢁꢌႆ
ߋ
ᝐ I
I
= 250 mA, V = 0 V
80
−
−
−
V
DSS
D
GS
= 250 mA, ꢉꢌႆꢓ25°C
−
46
mV/°C
DBVDSS
DTJ
D
I
⇆᧥ꢊꢋꢁꢉꢊꢋἡ
V
V
= 64 V, V = 0 V
−
−
−
−
1
mA
DSS
GSS
DS
GS
I
᧥ꢊ－⁰ꢊꢉꢋἡ
=
20 V, V = 0 V
100
nA
GS
DS
ꢔꢓꢇꢁ
V
᧥ꢊೃ⁰ꢊŔ⃘ꢊꢋꢁ
V
I
= V , I = 250 mA
2.0
3.4
4.0
V
GS(th)
GS
DS
D
᧥ꢊೃ⁰ꢊŔ⃘ꢊꢋꢁꢌႆ
ߋ
ᝐ = 250 mA, ꢉꢌႆꢓ25°C
−
−10
−
mV/°C
DVGS(th)
DTJ
D
r
ꢉꢊೃ⁰ꢊ∩ᇡොꢋℋ
V
GS
V
GS
V
GS
V
DD
= 10 V, I = 14 A
−
−
−
−
5.0
6.0
8.5
36
6.5
8.5
11
−
mW
DS(on)
D
= 8 V, I = 12 A
D
= 10 V, I = 14 A, T = 125°C
D
J
g
FS
ᵃ
ױ
ᢸො = 10 V, I = 14 A
S
D
ꢕꢖꢇꢁ
C
ᩣͅꢋ
V
DS
= 40 V, V = 0 V, f = 1 MHz
−
−
2775
468
15
−
−
pF
pF
pF
W
iss
GS
C
ᩣꢍꢋ
oss
C
֭
ױ
Āᩣꢋ ᧥ꢊℋᑷ
−
−
rss
R
0.1
0.7
2.1
g
www.onsemi.cn
2
FDMC86340ET80
ꢍꢎꢇꢁꢏꢌꢍ(T = 25°C ꢄꢅꢀꢆꢇꢈ) (continued)
J
ꢊꢆ
ꢇꢈ
ꢐꢑꢒꢎ
ꢃꢏꢉ ꢐꢑꢉ ꢃꢄꢉ
ꢊꢋ
ꢗꢒꢇꢁ
t
ොზ៖
⛺ԧ៖
V
= 40 V, I = 14 A, V = 10 V,
GEN
−
−
20
7.9
23
5.1
38
31
14
8.0
42
32
16
37
10
49
44
−
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
͓ឍზ៖
⛻ℝ៖
−
ns
d(off)
t
f
−
ns
Q
Q
ማ᧥ꢊꢋ็
ማ᧥ꢊꢋ็
᧥ꢊೃ⁰ꢊꢋ็
V
GS
V
GS
V
DD
= 0 V ೃ 10 V, V = 40 V, I = 14 A
30
20
−
nC
nC
nC
nC
nC
g(TOT)
g(TOT)
DD
D
= 0 V ೃ 8 V, V = 40 V, I = 14 A
DD
D
Q
Q
= 40 V, I = 14 A
D
gs
gd
᧥ꢊೃꢉꢊꢔ“ꢔ݃Ҳꢔ”ꢔꢋ็
ᩣꢍꢋ็
−
−
Q
V
DD
= 40 V, V = 0 V
−
−
oss
GS
ꢔꢄ－ꢕꢄꢘꢄꢖꢇꢁ
⁰ꢊ－ꢉꢊlꢊ
ٱ
ᵃױ
ꢋꢁ V
SD
−
−
−
−
0.8
0.7
41
1.3
1.2
66
V
V
V
= 0 V, I = 14 A (Ỉ 2)
GS
S
= 0 V, I = 1.9 A (Ỉ 2)
GS
S
t
rr
֭
ױ
ቂ૭៖ ֭
ױ
ቂ૭ꢋ็ I = 14 A, di/dt = 100 A/ms
F
ns
Q
25
40
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢉᚡᝧ)
ꢄꢅꢀꢆꢇꢈ，“ꢋᷴሇ”ጸꢋꢌꢍŔ᠏ᐠꢌἫᚥꢏ⛻Ŕ
ڡ
ሇ்ꢉᝐ。ୢई⛽
ꢏ⛻᪠ጜ，ڡ
ሇ்ꢐ்⛾“ꢋᷴሇ”ጸ ꢋᐠꢌሇ்ꢉᝐ⛽⛰ೄ。
Ỉዯ：
1. R
2
ֶΓnꢍꢎईFR−4 ꢏꢐ 1.5 x 1.5 in. ꢋꢑꢒ⛺1 in 2 ꢓ
ט
ꢔꢕꢖ⛺Ŕꢎꢏ。R ֶΓnꢔꢗꢘŔꢒꢙꢚ。
CA
q
q
JA
2
a. 53°C/W ꢍꢎईꢔ1 in 2 oz
ꢔꢕꢖ
b. 125°C/W ꢍꢎई2 oz Ŕᣠ
ꢛꢔꢕꢖ⛺៖Ŕ °C/W
2. ꢂἫᚥ: ꢂꢜႆ < 300 ms，Հꢝꢞ < 2.0%。
3. E ꢓ216 mJ，᪩᠏nϽꢟ T = 25°C, L = 3 mH, I = 12 A, V = 80 V, V = 10 V。ईL = 0.1 mH，I = 37 A ៖，ꢠጜ 100% ŔἫᚥ。
AS
J
AS
DD
GS
AS
4. ͓nꢂId Ŕꢡꢢꢣꢤ，ꢥꢉꢦ
ࣞ
11 Ŕ SOA ࣞ
。 5. ꢚꢧŔঽꢋἡ¥ꢨ℠Жꢓᣠଇণꢌ，ꢩꢪꢫŔঽꢋἡ෦ꢑַА⋍ꢆꢬꢋꢭꢗꢒꢙꢚŔ℠Ж。
www.onsemi.cn
3
FDMC86340ET80
ꢇꢗꢘꢙꢚ(T = 25°C ꢄꢅꢀꢆꢇꢈ)
J
5
200
160
120
80
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
V
= 6 V
GS
V
GS
= 10 V
4
3
2
1
0
V
V
= 8 V
GS
= 6.5 V
= 7 V
GS
V
GS
= 7 V
GS
V
= 8 V
GS
V
GS
= 6.5 V
40
V
GS
= 6 V
V
GS
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
0
40
80
120
160
200
0
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
ࣞ
1. ꢔꢓꢛꢜꢇꢝ ࣞ
2. ᄲ⛰Ӷꢙꢔꢓꢍꢚ⛾ꢔꢄꢍꢛ٬
ꢃꢄꢍի 2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
I
V
= 14 A
D
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
= 10 V
GS
40
I
D
= 14 A
30
20
10
0
T = 150°C
J
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
ࣞ
3. ᄲ⛰Ӷꢙꢔꢓꢍꢚ⛾ꢜꢘ ࣞ
4. ꢔꢓꢍꢚ⛾ꢃꢄꢝꢕꢄꢍի 200
100
200
160
120
80
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
10
1
V
DS
= 5 V
T = 175°C
J
T = 25°C
J
0.1
T = 175°C
J
T = 25°C
J
40
0.01
0.001
T = −55°C
T = −55°C
J
J
0
3
4
5
6
7
8
9
10
0.0
0.3
0.6
0.9
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
ࣞ
5. ꢞᕂꢇꢁ ࣞ
6. ꢕꢄꢝꢔꢄꢘꢄꢖꢙꢟױ
ꢍի⛾ꢕꢄꢍꢛ www.onsemi.cn
4
FDMC86340ET80
ꢇꢗꢘꢙꢚ(T = 25°C ꢄꢅꢀꢆꢇꢈ) (continued)
J
10
8
10000
I
D
= 14 A
Ciss
V
= 30 V
DD
1000
100
10
V
DD
= 40 V
Coss
6
V
DD
= 50 V
Crss
4
2
f = 1 MHz
= 0 V
V
GS
1
0
0
8
16
24
32
40
0.1
1
10
80
175
1
Q , GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
g
ࣞ
8. ꢍ⛾ꢔꢄꢝꢕꢄꢍի ࣞ
7. ꢃꢄꢍꢠꢇꢁ 60
10
80
60
40
20
0
T = 25°C
J
V
GS
= 10 V
T = 100°C
J
T = 150°C
J
V
= 8 V
GS
R
= 2.3°C/W
q
JC
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t
AV
, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (°C)
C
ࣞ
9. ꢡꢢꢋዿꢂꢗꢒꢌѻ ࣞ
10. ꢃꢄꢣꢤꢔꢄꢍꢛ⛾ꢘꢙ 500
10000
1000
100
100
10
1
10 ms
THIS AREA IS
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
T = MAX RATED
SINGLE PULSE
= 2.3°C/W
J
1 ms
R
CURVE BENT TO
MEASURED DATA
q
JC
= 25°C
R
q
= 2.3°C/W
JC
= 25°C
10 ms
DC
T
C
T
C
0.1
0.1
10
1
10
100 300
10−5
10−4
10−3
10−2
10−1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
ࣞ
11. ꢟױ
ȯꢥꢞꢟꢠꢡꢛ ࣞ
12. ꢊꢦꢢꢃꢄꢣꢧꢨꢤ www.onsemi.cn
5
FDMC86340ET80
ꢇꢗꢘꢙꢚ(T = 25°C ꢄꢅꢀꢆꢇꢈ) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
PDM
0.1
0.05
0.02
0.01
0.1
0.01
t1
t2
Ỉ：
Z
(t) = r(t) x R
= 2.3°C/W
q
q
JC
SINGLE PULSE
JC
R
q
JC
ꢮꢊT = P
x Z (t) + T
q
JC C
J
DM
Duty Cycle: D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (s)
ࣞ
13. ꢜꢝꢙꢩꢖꢋꢥꢂꢦꢪ ꢧꢫꢬꢭ⛾ꢅꢮꢨꢩ
ꢪꢎꢬꢭ
†
ꢪꢎ
FDMC86340ET
ꢧꢫ
ꢫꢬꢭ
ꢮꢯ
Shipping
FDMC86340ET80
WDFN8 3.3x3.3, 0.65P
(Power 33)
13”
12 mm
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.cn
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3X3.3, 0.65P
CASE 483AW
ISSUE A
DATE 10 SEP 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
XXXX
AYWW
WW = Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13672G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
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