FDMC86520DC [ONSEMI]
N 沟道，双 CoolTM 33 PowerTrench® MOSFET，60V，40A，6.3mΩ;
| 型号： | FDMC86520DC |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，双 CoolTM 33 PowerTrench® MOSFET，60V，40A，6.3mΩ |
| 文件： | 总8页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
DUAL COOLꢀ 33,
V
r
MAX
I MAX
D
DS
DS(ON)
60 V
ꢁ
ꢂ
ꢃ
m
ꢀ
@
1
0
V
40 A
POWERTRENCHꢀ
60 V, 40 A, 6.3 mW
8.7 mꢀ @ 8 V
Pin 1
D
D
D
D
FDMC86520DC
G
S
S
S
General Description
Top
Bottom
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process. Advancements in both silicon and DUAL
COOL package technologies have been combined to offer the lowest
Pin 1
PQFN8 3.3X3.3, 0.65P
CASE 483AL
r
while maintaining excellent switching performance by
DS(on)
DUAL COOL 33
extremely low Junction−to−Ambient thermal resistance.
Features
MARKING DIAGRAM
• DUAL COOL Top Side Cooling PQFN Package
• Max r
• Max r
= 6.3 mꢀ at V = 10 V, I = 17 A
GS D
DS(on)
= 8.7 mꢀ at V = 8 V, I = 14,5 A
DS(on)
GS
D
&Z&3&K
86520
• High Performance Technology for Extremely Low r
DS(on)
• This Device is Pb−Free, Halide Free and RoHS Compliant
Applications
• Primary DC−DC Switch
• Motor Bridge Switch
• Synchronous Rectifier
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
86520
= Specific Device Code
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Rating
60
Unit
V
V
DS
V
GS
PIN CONNECTIONS
20
V
I
D
T
C
= 25°C
40
A
S
S
1
2
8
7
D
D
Continuous T = 25°C
17
A
(Note 1a)
Pulsed
80
128
S
3
4
6
5
D
D
E
Single Pulse Avalanche Energy (Note 3)
mJ
W
AS
P
Power Dissipation
T
= 25°C
73
D
C
G
Power Dissipation (Note 1a) T = 25°C
3.0
A
T , T
Operating and Storage Junction
Temperature Range
−55 to + 150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
January, 2023 − Rev. 2
FDMC86520DC/D
FDMC86520DC
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
4.2
Unit
R
ꢄ
JC
R
ꢄ
JC
R
ꢄ
JA
R
ꢄ
JA
R
ꢄ
JA
R
ꢄ
JA
R
ꢄ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
(Top Source)
°C/W
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
1.7
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
42
105
17
(Note 1j)
26
(Note 1k)
12
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 ꢅ A, V = 0 V
GS
60
−
−
−
V
DSS
D
Breakdown Voltage Temperature
Coefficient
= 250 ꢅ A, referenced to 25°C
−
30
mV/°C
ꢆ BVDSS
ꢆ TJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 48 V, V
GS
= 0 V
= 0 V
−
−
−
−
1
ꢅ A
DSS
GSS
DS
I
=
20 V, V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 ꢅ A
2.5
3.7
4.5
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 ꢅ A, referenced to 25°C
−
−10
−
mV/°C
ꢆ VGS(th)
ꢆ TJ
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 17 A
−
−
−
−
5.1
6.5
8.2
49
6.3
8.7
10.2
−
mꢀ
DS(on)
D
= 8 V, I = 14.5 A
D
= 10 V, I = 17 A, T = 125°C
D
J
g
FS
= 10 V, I = 17 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 30 V, V = 0 V, f = 1 MHz
−
−
2097
557
13
2790
745
40
pF
pF
pF
ꢀ
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
0.5
2.5
g
SWITCHING CHARACTERISTICS
td
Turn−On Delay Time
Rise Time
V
V
= 30 V, I = 17 A,
−
−
−
−
−
−
−
−
18
6.6
19
4
33
14
35
10
40
33
−
ns
(on)
DD
GS
D
= 10 V, R
= 6 ꢀ
GEN
t
r
t
Turn−Off Delay Time
Fall Time
d(off)
t
f
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 30 V, I = 17 A
29
23
12
5.5
nC
g(TOT)
DD
D
= 0 V to 8 V, V = 30 V, I = 17 A
DD
D
Q
Q
Gate to Source Charge
= 30 V, I = 17 A
nC
nC
gs
D
Gate to Drain “Miller” Charge
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 17 A
(Note 2)
(Note 2)
−
−
−
−
0.83
0.74
41
1.3
1.2
65
V
SD
GS
S
= 0 V, I = 2.5 A
GS
S
t
Reverse Recovery Time
I = 17 A, di/dt = 100 A/ꢅ s
F
ns
rr
Q
Reverse Recovery Charge
23
37
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDMC86520DC
THERMAL CHARACTERISTICS
°C/W
RθJC
RθJC
RθJA
Thermal Resistance, Junction to Case
(Top Source)
4.2
1.7
42
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Bottom Drain)
(Note 1a)
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
105
29
40
19
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1f)
(Note 1g)
(Note 1h)
23
30
79
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1i)
(Note 1j)
(Note 1k)
17
26
12
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
16
NOTES:
1. R
is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by
θ
θ
JC
JA
design while R
is determined by the user’s board design.
θ
CA
b. 105°C/W when mounted on
a minimum pad of 2 oz copper
a. 42°C/W when mounted on
2
a 1 in pad of 2 oz copper
2
c. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
d. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
e. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
f. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2
g. 200FPM Airflow, No Heat Sink, 1 in pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
2
i. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in pad of 2 oz copper
j. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
k. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in pad of 2 oz copper
l. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ꢅ s, Duty cycle < 2.0%.
3. E of 128 mJ is based on starting T = 25°C, L = 1 mH, I = 16 A, V = 54 V, V = 10 V, 100% test at L = 0.3 mH, I = 24 A.
AS
J
AS
DD
GS
AS
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3
FDMC86520DC
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
80
60
40
20
0
5
V
V
= 10 V
= 8 V
GS
GS
V
= 6 V
V
= 7 V
GS
GS
4
3
2
1
0
V
= 6.5 V
GS
V
GS
= 7 V
V
= 6.5 V
GS
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 10 V
Pulse Duration = 80 ꢅs
Duty Cycle = 0.5% Max
Pulse Duration = 80 ꢅs
Duty Cycle = 0.5% Max
40
I , Drain Current (A)
0
20
60
80
1
2
3
4
5
0
V
DS
, Drain to Source Voltage (V)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
25
20
15
10
5
Pulse Duration = 80 ꢅs
Duty Cycle = 0.5% Max
I
V
= 17 A
D
= 10 V
GS
I
D
= 17 A
T = 125°C
J
T = 25°C
J
0
−75 −50 −25
0
25
50
75 100 125 150
5
6
7
8
9
10
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (ꢁ C)
J
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
100
10
80
60
V
GS
= 0 V
Pulse Duration = 80 ꢅs
Duty Cycle = 0.5% Max
V
DS
= 5 V
T = 150°C
J
1
40
20
0
T = 150°C
T = 25°C
J
J
0.1
T = 25°C
J
T = −55°C
J
0.01
T = −55°C
J
0.001
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
6
7
8
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDMC86520DC
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
10000
I
D
= 17 A
V
= 20 V
DD
C
iss
1000
100
10
V
DD
= 30 V
V
DD
= 40 V
6
C
C
oss
4
2
0
f = 1 MHz
= 0 V
rss
V
GS
1
0
10
Q , Gate Charge (nC)
0.1
1
10
60
5
15
20
25
30
V
, Drain to Source Voltage (V)
DS
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
90
60
30
0
100
10
V
= 10 V
GS
T = 25°C
J
T = 100°C
J
V
= 8 V
GS
Limited by Package
T = 125°C
J
R
= 1.7°C/W
ꢄ
JC
1
0.01
0.1
10
, Time in Avalanche (ms)
100
25
50
75
100
125
150
1
t
T , Case Temperature (ꢁ C)
AV
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs Case Temperature
100
10
300
100
Single pulse
R
= 105°C/W
ꢄ
JA
T = 25°C
A
1
This Area is
Limited by r
1 ms
10 ms
DS(on)
10
1
100 ms
Single Pulse
T = Max Rated
0.1
0.01
1 s
J
R
10 s
DC
= 105°C/W
ꢄ
JA
T = 25°C
A
−3
−2
−1
0.01
0.1
1
10
100 300
10
10
10
1
10
100 1000
t, Pulse Width (s)
V
DS
, Drain to Source Voltage (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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FDMC86520DC
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
Duty Cycle − Descending Order
D = 0.5
0.2
0.1
P
DM
0.1
t
1
t
2
0.05
Notes:
Duty Factor: D = t /t
0.02
0.01
1
2
Single pulse
= 105°C/W
Peak T = P
× Z
× R
+ T
JA A
ꢄ
ꢄ
J
DM
JA
0.01
R
ꢄ
JA
0.003
−3
−2
−1
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Reel Size
Tape Width
12 mm
Quantity
FDMC86520DC
86520
DUAL COOL 33
13”
3000 Units
POWERTRENCH and DUAL COOL are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 3.3X3.3, 0.65P
CASE 483AL
ISSUE A
DATE 01 JUN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13661G
PQFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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