FDMC86520L [ONSEMI]

60V N 沟道 PowerTrench® MOSFET;
FDMC86520L
型号: FDMC86520L
厂家: ONSEMI    ONSEMI
描述:

60V N 沟道 PowerTrench® MOSFET

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DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel,  
POWERTRENCH)  
60 V, 22 A, 7.9 mW  
V
r
MAX  
I MAX  
D
DS  
DS(on)  
60 V  
7.9 mW @ 10 V  
22 A  
11.7 mW @ 4.5 V  
FDMC86520L  
Pin 1  
G
General Description  
S
S
S
This NChannel MOSFET has been designed specifically to  
improve the overall efficiency and to minimize switch node ringing  
of DC/DC converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for low gate charge,  
D
D
D
D
low r  
performance.  
, fast switching speed and body diode reverse recovery  
DS(on)  
Bottom  
Top  
WDFN8 3.3x3.3, 0.65P  
CASE 511DH  
Features  
Max r  
= 7.9 mW at V = 10 V, I = 13.5 A  
GS D  
DS(on)  
Max r  
= 11.7 mW at V = 4.5 V, I = 11.5 A  
GS D  
DS(on)  
MARKING DIAGRAM  
Low Profile 1 mm Max in Power 33  
100% UIL Tested  
This Device is PbFree, Halide Free and RoHS Compliant  
&Z&2&K  
FDMC  
86520L  
Applications  
Primary Switch in Isolated DCDC  
Synchronous Rectifier  
Load Switch  
&Z  
&2  
= Assembly Plant Code  
= 2Digit Date Code  
(Year and Week)  
&K  
= 2Digit Lot Run Code  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
FDMC86520L = Specific Device Code  
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current Continuous  
Rating  
60  
Unit  
V
V
DS  
V
GS  
PIN ASSIGNMENT  
20  
V
I
D
T
C
= 25°C  
22  
A
D
D
5
6
4
3
G
S
Continuous T = 25°C  
13.5  
A
(Note 1a)  
Pulsed  
60  
D
D
7
8
2
1
S
S
E
Single Pulse Avalanche Energy (Note 3)  
79  
40  
mJ  
W
AS  
P
Power Dissipation  
T = 25°C  
C
D
Power Dissipation (Note 1a) T = 25°C  
2.3  
A
T , T  
Operating and Storage Junction  
Temperature Range  
55 to + 150  
°C  
PChannel MOSFET  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
THERMAL CHARACTERISTICS  
Symbol  
RqJC  
Parameter  
Rating  
3.1  
Unit  
Thermal Resistance, Junction to Case  
°C/W  
RqJA  
Thermal Resistance,  
Junction to Ambient (Note 1a)  
53  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
April, 2023 Rev. 4  
FDMC86520L/D  
FDMC86520L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
BV  
Drain to Source Breakdown Voltage  
I
I
= 250 mA, V = 0 V  
60  
V
DSS  
D
GS  
Breakdown Voltage Temperature  
Coefficient  
= 250 mA, referenced to 25°C  
29  
mV/°C  
DBVDSS  
DTJ  
D
I
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
V
V
= 48 V, V = 0 V  
1
mA  
DSS  
GSS  
DS  
GS  
I
=
20 V, V = 0 V  
100  
nA  
GS  
DS  
ON CHARACTERISTICS  
V
Gate to Source Threshold Voltage  
V
I
= V , I = 250 mA  
1
1.7  
3
V
GS(th)  
GS  
DS  
D
Gate to Source Threshold Voltage  
Temperature Coefficient  
= 250 mA, referenced to 25°C  
7  
mV/°C  
DVGS(th)  
DTJ  
D
r
Static Drain to Source On Resistance  
Forward Transconductance  
V
GS  
V
GS  
V
GS  
V
DS  
= 10 V, I = 13.5 A  
6.5  
9.1  
9
7.9  
11.7  
11  
mW  
DS(on)  
D
= 4.5 V, I = 11.5 A  
D
= 10 V, I = 13.5 A, T = 125°C  
D
J
g
FS  
= 5 V, I = 13.5 A  
49  
S
D
DYNAMIC CHARACTERISTICS  
C
Input Capacitance  
V
DS  
= 30 V, V = 0 V, f = 1 MHz  
3420  
638  
25  
4550  
850  
40  
pF  
pF  
pF  
W
iss  
GS  
C
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
oss  
C
rss  
R
0.5  
g
SWITCHING CHARACTERISTICS  
t
TurnOn Delay Time  
Rise Time  
V
= 30 V, I = 13.5 A, V = 10 V,  
GEN  
15  
5.2  
32  
30  
10  
55  
10  
64  
30  
ns  
ns  
ns  
ns  
nC  
d(on)  
DD  
D
GS  
R
= 6 W  
t
r
t
TurnOff Delay Time  
Fall Time  
d(off)  
t
f
3.4  
45  
Q
Total Gate Charge  
V
GS  
V
GS  
V
DD  
= 0 V to 10 V, V = 30 V, I = 13.5 A  
DD D  
g(TOT)  
= 0 V to 4.5 V, V = 30 V, I = 13.5 A  
21  
DD  
D
Q
Q
Total Gate Charge  
= 30 V, I = 13.5 A  
9.6  
4.9  
nC  
nC  
gs  
D
Gate to Drain “Miller” Charge  
gd  
DRAINSOURCE DIODE CHARACTERISTICS  
V
Source to Drain Diode Forward  
Voltage  
V
V
= 0 V, I = 13.5 A (Note 2)  
0.82  
0.71  
38  
1.3  
1.2  
62  
V
SD  
GS  
S
= 0 V, I = 2 A (Note 2)  
GS  
S
t
Reverse Recovery Time  
I = 13.5 A, di/dt = 100 A/ms  
F
ns  
rr  
Q
Reverse Recovery Charge  
21  
34  
nC  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2
1. R  
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR4 material. R  
is guaranteed  
JC  
q
q
JA  
by design while R  
is determined by the user’s board design.  
q
CA  
a. 53°C/W when mounted on  
b. 125°C/W when mounted on  
a minimum pad of 2 oz copper  
2
a 1 in pad of 2 oz copper  
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.  
3. Starting T = 25°C; Nch: L = 0.3 mH, I = 23 A, V = 54 V, V = 10 V.  
J
AS  
DD  
GS  
www.onsemi.com  
2
 
FDMC86520L  
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
60  
4
Pulse Duration = 80 ms  
Duty Cycle = 0.5% Max  
V
GS  
V
GS  
= 10 V  
= 4.5 V  
50  
40  
30  
20  
10  
0
V
= 3.5 V  
GS  
3
2
1
V
= 3 V  
GS  
V
= 3.5 V  
V
GS  
V
= 4 V  
GS  
= 4 V  
GS  
V
= 3 V  
GS  
V
= 4.5 V  
GS  
V
= 10 V  
GS  
Pulse Duration = 80 ms  
Duty Cycle = 0.5% Max  
0
0
10  
20  
30  
40  
50  
60  
10  
1.2  
0.5  
1.0  
1.5  
2.0  
2.5  
0
I , Drain Current (A)  
V
DS  
, Drain to Source Voltage (V)  
D
Figure 1. On Region Characteristics  
Figure 2. Normalized OnResistance  
vs. Drain Current and Gate Voltage  
1.8  
1.6  
1.4  
1.2  
1.0  
40  
30  
20  
Pulse Duration = 80 ms  
Duty Cycle = 0.5% Max  
I
V
= 13.5 A  
= 10 V  
D
I
= 13.5 A  
D
GS  
T = 125°C  
J
10  
0
0.8  
0.6  
T = 25°C  
J
75 50 25  
0
25  
50  
75 100 125 150  
2
4
6
8
V
GS  
, Gate to Source Voltage (V)  
T , Junction Temperature (5C)  
J
Figure 3. Normalized On Resistance  
vs. Junction Temperature  
Figure 4. OnResistance vs. Gate to Source  
Voltage  
100  
10  
60  
50  
40  
30  
20  
10  
0
V
= 0 V  
Pulse Duration = 80 ms  
Duty Cycle = 0.5% Max  
GS  
V
= 5 V  
DS  
T = 150°C  
J
T = 150°C  
J
1
T = 25°C  
J
T = 25°C  
J
0.1  
T = 55°C  
T = 55°C  
J
J
0.01  
0.001  
2.5  
, Gate to Source Voltage (V)  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.5  
2.0  
3.0  
3.5  
4.0  
V
V
, Body Diode Forward Voltage (V)  
GS  
SD  
Figure 5. Transfer Characteristics  
Figure 6. Source to Drain Diode  
Forward Voltage vs. Source Current  
www.onsemi.com  
3
FDMC86520L  
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)  
J
10  
8
10000  
I
D
= 13.5 A  
V
= 20 V  
DD  
C
iss  
1000  
100  
10  
V
= 30 V  
DD  
C
6
oss  
V
= 40 V  
DD  
4
2
0
C
rss  
f = 1 MHz  
= 0 V  
V
GS  
1
0
20  
Q , Gate Charge (nC)  
0.1  
1
10  
60  
10  
30  
40  
50  
V
, Drain to Source Voltage (V)  
DS  
g
Figure 7. Gate Charge Characteristics  
Figure 8. Capacitance vs. Drain to Source Voltage  
60  
50  
10  
50  
40  
30  
20  
10  
0
V
GS  
= 10 V  
T = 25°C  
J
V
GS  
= 4.5 V  
T = 100°C  
J
Limited by package  
50  
T = 125°C  
J
R
= 3.1°C/W  
q
JC  
1
0.01  
0.1  
10  
100  
25  
75  
100  
125  
150  
1
t
, Time in Avalanche (ms)  
AV  
T , Case Temperature (5C)  
C
Figure 9. Unclamped Inductive Switching  
Capability  
Figure 10. Maximum Continuous Drain Current  
vs Case Temperature  
2000  
1000  
100  
10  
Single pulse  
R
= 125°C/W  
q
JA  
100 ms  
T = 25°C  
A
100  
10  
1 ms  
1
10 ms  
100 ms  
1 s  
This Area is  
Limited by r  
DS(on)  
Single Pulse  
T = Max Rated  
0.1  
0.01  
J
q
R
= 125°C/W  
JA  
10 s  
DC  
1
T = 25°C  
A
0.5  
4  
3  
2  
1  
0.01  
0.1  
1
10  
100 300  
10  
10  
10  
10  
1
10  
100 1000  
t, Pulse Width (s)  
V
DS  
, Drain to Source Voltage (V)  
Figure 11. Forward Bias Safe Operating Area  
Figure 12. Single Pulse Maximum  
Power Dissipation  
www.onsemi.com  
4
FDMC86520L  
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)  
J
2
1
Duty Cycle Descending Order  
D = 0.5  
0.2  
0.1  
P
DM  
0.1  
0.05  
t
1
0.02  
0.01  
t
2
Notes:  
Duty Factor: D = t /t  
0.01  
1
2
Peak T = P  
× Z  
× R  
+ T  
JA A  
Single pulse  
= 125°C/W  
q
q
J
DM  
JA  
R
q
JA  
0.001  
0.0005  
4  
3  
2  
1  
10  
10  
10  
10  
1
10  
100  
1000  
t, Rectangular Pulse Duration (s)  
Figure 13. JunctiontoAmbient Transient Thermal Response Curve  
ORDERING INFORMATION  
Device  
Device Marking  
FDMC86520L  
Package Type  
Reel Size  
Tape Width  
12 mm  
Shipping  
FDMC86520L  
WDFN8 3.3x3.3, 0.65P  
Power 33  
(PbFree, Halide Free)  
13”  
3000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, .BRD8011/D.  
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other  
countries.  
www.onsemi.com  
5
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
WDFN8 3.3x3.3, 0.65P  
CASE 511DH  
ISSUE O  
DATE 31 JUL 2016  
(3.40)  
2.37  
0.05 C  
B
3.30  
A
8
5
2X  
0.45(4X)  
(0.40)  
2.15  
3.30  
(1.70)  
KEEP OUT  
AREA  
(0.65)  
0.70(4X)  
0.05 C  
PIN#1 IDENT  
1
4
TOP VIEW  
0.65  
0.42(8X)  
2X  
1.95  
RECOMMENDED LAND PATTERN  
0.75 0.05  
0.10 C  
0.15 0.05  
0.08 C  
0.025 0.025  
NOTES:  
C
SIDE VIEW  
SEATING  
PLANE  
A. DOES NOT CONFORM TO JEDEC  
REGISTRATION MO229  
B. DIMENSIONS ARE IN MILLIMETERS.  
3.30 0.05  
2.27 0.05  
C. DIMENSIONS AND TOLERANCES PER  
ASME Y14.5M, 2009.  
(0.50)4X  
(0.35)  
PIN #1 IDENT  
0.50 0.05 (4X)  
(0.79)  
D. LAND PATTERN RECOMMENDATION IS  
EXISTING INDUSTRY LAND PATTERN.  
1
4
(1.15)  
3.30 0.05  
2.00 0.05  
R0.15  
0.30 0.05 (3X)  
8
5
0.35 0.05 (8X)  
0.65  
0.10  
0.05  
C A B  
C
1.95  
BOTTOM VIEW  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13625G  
WDFN8 3.3X3.3, 0.65P  
PAGE 1 OF 1  
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