FDMC8854 [ONSEMI]
N 沟道，Power Trench® MOSFET，30V，15A，5.7mΩ;
| 型号： | FDMC8854 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，30V，15A，5.7mΩ |
| 文件： | 总7页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
POWERTRENCH)
V
R
MAX
I MAX
D
DS
DS(ON)
30 V
5.7 mW @ 10 V
7.6 mW @ 4.5 V
15 A
30 V, 15 A, 5.7 mW
Pin 1
G
S
FDMC8854
S
S
D
General Description
D
D
D
This N−Channel MOSFET is a rugged gate version of onsemi’s
advanced Power Trench process. It has been optimized for power
management applications.
Top
Bottom
WDFN8 3.3x3.3, 0.65P
CASE 511DH
Features
• Max r
• Max r
= 5.7 mW at V = 10 V, I = 15 A
GS D
DS(on)
DS(on)
MARKING DIAGRAM
= 7.6 mW at V = 4.5 V, I = 13 A
GS
D
• Low Profile − 1 mm Max in Power 33
FDMC
8854
• This Device is Pb−Free, Halide Free and is RoHS Compliant
ALYW
Applications
• DC−DC Conversion
FDMC8854 = Device Code
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
A
= Assembly Site
A
L
YW
= Wafer Lot Number
= Assembly Start Week
Symbol
Parameter
Drain to Source Voltage
Value
30
Unit
V
V
DS
V
GS
Gate to Source Voltage
20
V
PIN ASSIGNMENT
I
Drain Current
– Continuous
A
D
T
= 25°C
15
15
C
– Continuous (Note 1a)
T = 25°C
A
– Pulsed
100
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
P
Power Dissipation
T
= 25°C
C
41
W
D
Power Dissipation (Note 1a)
T = 25°C
A
2.0
T , T
Operating and Storage Junction
Temperature Range
−55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
N−Channel MOSFET
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Value
3
Unit
°C/W
°C/W
ORDERING INFORMATION
R
Thermal Resistance, Junction to Case
q
JC
†
Device
Package
Shipping
R
Thermal Resistance, Junction to Ambient
(Note 1a)
60
q
JA
WDFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
FDMC8854
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2023 − Rev. 3
FDMC8854/D
FDMC8854
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
−
21
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 24 V, V = 0 V
−
−
−
−
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1
1.9
3
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−
−6
−
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 15 A
−
−
−
−
4.4
5.6
6.6
60
5.7
7.6
9.0
−
mW
DS(on)
D
= 4.5 V, I = 13 A
D
= 10 V, I = 15 A, T = 125°C
D
J
g
FS
= 5 V, I = 15 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 10 V, V = 0 V,
−
−
−
−
2560
515
290
1.3
3405
685
435
−
pF
pF
pF
W
iss
DS
GS
f = 1 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1 MHz
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= 10 V, I = 15 A,
−
−
−
−
−
−
−
13
5
23
10
50
10
57
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 Ω
GEN
t
r
t
Turn−Off Delay Time
Fall Time
31
5
ns
d(off)
t
f
ns
Q
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
V
GS
= 10 V, I = 15 A,
41
7
nC
nC
nC
g(TOT)
D
= 10 V
Q
gs
gd
Q
7
−
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 15 A (Note 2)
−
−
−
0.8
33
28
1.3
50
42
V
SD
GS
S
t
I = 15 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
b) 135°C/W when mounted on
a) 60°C/W when mounted on
2
a minimum pad of 2 oz copper.
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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2
FDMC8854
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
3.0
100
V
GS
= 10 V
2.5
80
60
V
= 4.5 V
GS
V
GS
= 3.5 V
V
= 4.0 V
GS
2.0
1.5
1.0
0.5
V
GS
= 4.0 V
V
= 3.5 V
GS
40
20
0
V
= 4.5 V
= 10 V
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
5
0
1
2
3
4
0
20
40
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
15
12
9
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
D
= 15 A
I
D
= 15 A
V
GS
= 10 V
T = 125°C
J
6
T = 25°C
J
3
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
100
80
100
10
V
GS
= 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
T = 150°C
J
60
40
20
0
1
T = 25°C
J
0.1
0.01
1E−3
T = 150°C
J
T = 25°C
J
T = −55°C
J
T = −55°C
J
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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3
FDMC8854
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
4000
I
D
= 15 A
C
iss
V
DD
= 10 V
V
DD
= 5 V
1000
6
C
oss
V
DD
= 15 V
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
100
0.1
0
10
20
30
40
50
1
10
30
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to
Source Voltage
20
10
80
60
40
20
0
V
= 10 V
GS
T = 25°C
J
V
= 4.5 V
GS
T = 125°C
J
PACKAGE LIMITED
R
= 3°C/W
q
JC
1
0.01
25
50
75
100
125
150
0.1
t
1
10
100
1000
, TIME IN AVALANCHE (ms)
T , CASE TEMPERATURE (°C)
AV
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
200
100
T = 25°C
A
FOR TEMPERATURES ABOVE
25°C DERATE PEAK CURRENT
AS FOLLOWS:
1 ms
10
1
10 ms
150 * TA
Ǹ
I + I25ƪ ƫ
V
GS
= 10 V
125
R
LIMITED
10
DS(on)
100 ms
SINGLE PULSE
T = MAX RATED
1 s
DC
0.1
J
R
= 135°C/W
q
JA
1
T = 25°C
A
SINGLE PULSE
0.01
0.5
10−3
10−1
100
101
102
103
0.01
0.1
1
10
100
10−2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
FDMC8854
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t / t
1
2
PEAK T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.01
SINGLE PULSE
10−2
0.004
10−3
10−1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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© Semiconductor Components Industries, LLC, 2019
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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