FDMC8878 [ONSEMI]
N 沟道，PowerTrench® MOSFET，30V，16.5A，14mΩ;
| 型号： | FDMC8878 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，30V，16.5A，14mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDMC8878
N-Channel
POWERTRENCH) MOSFET
30 V, 16.5 A, 14 mW
This N−Channel MOSFET is a rugged gate version of
ON Semiconductor’s advanced PowerTrench process. It has been
optimized for power management applications.
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Features
D
• R
• R
= 14 mꢀ (Max.) @ V = 10 V, I = 9.6 A
GS D
DS(on)
= 17 mꢀ (Max.) @ V = 4.5 V, I = 8.7 A
DS(on)
GS
D
• Low Profile − 0.8 mm Max in MLP 3.3 x 3.3
• These Devices are Pb−Free and are RoHS Compliant
G
Application
• DC − DC Conversion
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
V
DS
V
GS
Gate−to−Source Voltage
20
V
Continuous Drain Current
T
= 25°C
I
D
16.5
A
C
(Package limited)
WDFN8
CASE 511DH
T
= 25°C
38
C
(Silicon limited)
T = 25°C
9.6
A
(Figure 1)
Drain Current
Pulsed
I
60
31
A
D
G
S
D
D
D
D
5
6
7
8
4
Power Dissipation
T
= 25°C
P
W
C
D
T = 25°C
2.1
A
3
2
1
(Figure 1)
Operating and Storage Junction Temperature
Range
T , T
−55 to
+150
°C
S
S
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 1 of this data sheet.
Parameter
Symbol
Value
4
Unit
Thermal Resistance, Junction−to−Case
R
°C/W
ꢁ
JC
Thermal Resistance, Junction−to−Ambient
(Figure 1)
R
60
ꢁ
JA
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FDMC8878
Top Mark
Package
Reel Size
Tape Width
Quantity
FDMC8878
MLP 3.3 x 3.3
13″
12 mm
3000 units
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
October, 2018 − Rev. 5
FDMC8878/D
FDMC8878
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
I
= 250 ꢂ A, V = 0 V
30
−
−
−
V
DSS
D
GS
ꢃ BV
/ꢃ T
Breakdown Voltage Temperature
Coefficient
I
D
= 250 ꢂ A, Referenced to 25°C
−
20
mV/°C
DSS
J
I
Zero Gate Voltage Drain Current
V
= 24 V, V = 0 V
−
−
−
−
−
−
1
ꢂ A
DSS
DS
GS
V
DS
= 24 V, V = 0 V, T = 125°C
100
100
GS
J
I
Gate−to−Source Leakage Current
V
GS
=
20 V, V = 0 V
nA
GSS
DS
ON CHARACTERISTICS
V
GS(th)
Gate−to−Source Breakdown Voltage
I
D
= 250 ꢂ A, V = V
DS
1
1.7
3
V
GS
ꢃ
B
V
/ꢃ T
Gate−to−Source Threshold Voltage
Temperature Coefficient
I = 250 ꢂ A, Referenced to 25°C
D
−
−5.7
−
mV/°C
DSS
J
R
Drain−to−Source On Resistance
V
= 10 V, I = 9.6 A
−
−
−
−
9.6
12.1
13.5
35
14.0
17.0
20.0
−
mꢀ
DS(on)
GS
D
V
GS
= 4.5 V, I = 8.7 A
D
V
GS
= 10 V, I = 9.6 A, T = 125°C
D J
g
FS
Forward Transconductance
V
= 5 V, I = 9.6 A
S
DS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
1000
183
118
1.1
1230
255
180
−
pF
pF
pF
ꢀ
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Reverse Transfer Capacitance
rss
R
f = 1 MHz
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
GS
= 15 V, I = 9.6 A,
−
−
−
−
−
−
−
8
16
10
36
10
26
−
ns
d(on)
DD
D
V
= 10 Vꢄ R
= 6 ꢀ
GEN
t
r
4
t
Turn−Off Delay Time
Fall Time
20
3
d(off)
t
f
Q
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
V
GS
= 10 V, V = 15 V,
18
2.8
3.9
nC
g(tot)
DD
= 9.6 A
I
D
Q
gs
Q
−
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source−to−Drain Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I = 9.6 A (Note 2)
−
−
−
0.8
23
14
1.2
35
21
V
SD
S
t
I = 9.6 A,
ns
nC
rr
F
di/dt = 100 A/ꢂ s
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
ꢁ
ꢁ
JA
by design while R
is determined by the user’s board design.
ꢁ
CA
a. 60°C/W when mounted on
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
2
a 1 in pad of 2 oz copper
Figure 1.
Figure 2.
2. Pulse Test: Pulse Width < 300 ꢂ s, Duty cycle < 2.0%.
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2
FDMC8878
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
2.5
60
50
40
30
20
10
0
PULSE DURATION = 80ꢂs
DUTY CYCLE = 0.5%MAX
V
= 10V
GS
2.0
V
= 3.5V
GS
VGS = 3V
VGS = 4V
VGS = 4.5V
V
= 4.5V
= 4V
GS
V
GS
V
GS = 3.5V
1.5
1.0
0.5
V
= 3V
GS
VGS = 10V
20
PULSEDURATION = 80ꢂs
DUTY CYCLE = 0.5%MAX
0
10
30
40
50
60
0
1
2
3
, DRAIN TO SOURCE VOLTAGE (V)
4
V
DS
I , DRAIN CURRENT(A)
D
Figure 3. Gate Charge Characteristics
Figure 4. Capacitance vs. Drain to Source
Voltage
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
5
PULSE DURATION = 80ꢂs
DUTY CYCLE = 0.5%MAX
I
= 9.6A
= 10V
D
I
D
= 9.6A
V
GS
T
J
= 125oC
T
J
= 25oC
7
−75 −50 −25
0
25 50 75 100 125 150
3
4
5
6
8
9
10
TJ, JUNCTION TEMPERATURE(oC)
GS
V
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Unclamped Inductive Switching
Capability
Figure 6. Maximum Continuous Drain Current
vs. Ambient Temperature
60
100
10
PULSE DURATION = 80ꢂ s
DUTY CYCLE = 0.5%MAX
V
= 0V
GS
50
40
30
20
10
0
V
= 5
V
DD
1
T
J
= 25oC
T
J
= 150oC
T
= 25 oC
J
0.1
T
J
= − 55oC
= 150oC
T
J
= −55 oC
T
J
0.01
0.001
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Forward Bias Safe Operating Area
Figure 8. Single Pulse Maximum Power
Dissipation
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3
FDMC8878
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
10
8
3000
I
= 9.6A
D
V
= 15V
DD
C
iss
1000
V
DD
= 10V
6
C
oss
V
DD
= 20V
4
C
rss
2
f = 1MHz
100
50
V
GS
= 0V
0
30
0.1
1
10
0
5
10
15
20
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Q , GATE CHARGE(nC)
g
Figure 9. On−Region Characteristics
Figure 10. Transfer Characteristics
12
10
8
20
10
V
GS
= 10V
T
J
= 25oC
6
V
GS
= 4.5V
T
J
= 125oC
4
2
RꢁJA = 60oC/W
50
1
0
80
0.01
0.1
1
10
25
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure 11. On−Resistance Variation vs. Drain
Figure 12. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Current and Gate Voltage
300
80
o
T
= 25 C
VGS = 10 V
A
100us
FOR TEMPERATURES
100
10
o
ABOVE 25 C DERATE PEAK
1ms
CURRENT AS FOLLOWS:
10ms
1
0.1
150 − T
A
I = I
25
125
100ms
10
1s
10s
DC
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
0.01
0.001
T
= MAX RATED
= 25oC
J
SINGLE PULSE
1
T
A
0.5
10−3
10−2
10−1
t, PULSE WIDTH (s)
100
101
102
103
0.1
1
10
80
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 13. Capacitance Characteristics
Figure 14. Gate Charge Characteristics
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4
FDMC8878
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
x R
SINGLE PULSE
10−2
PEAK T = P x Z
+ T
JA A
ꢁ
ꢁ
J
DM
JA
0.003
10−3
10−1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 15. Transient Thermal Response Curve
1
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO−229
B. DIMENSIONS ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05 (4X)
(0.79)
D. LAND PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05 (3X)
8
5
0.35 0.05 (8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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