FDME1034CZT [ONSEMI]
互补，PowerTrench® MOSFET，±20V;
| 型号： | FDME1034CZT |
| 厂家： | 
ONSEMI |
| 描述： | 互补，PowerTrench® MOSFET，±20V 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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ELECTRICAL CONNECTION
MOSFET – Complementary,
POWERTRENCH)
N-Channel: 20 V, 3.8 A, 66 mW
P-Channel: -20 V, -2.6 A, 142ꢀmW
FDME1034CZT
General Description
This device is designed specifically as a single package solution for
a DC−DC ‘Switching’ MOSFET in cellular handset and other
ultra−portable applications. It features an independent N−Channel &
P−Channel MOSFET with low on−state resistance for minimum
conduction losses. The gate charge of each MOSFET is also
minimized to allow high frequency switching directly from the
controlling device.
D2(P3)
G1(P2)
S1
D2(P8)
D1(P7)
Pin 1
S2(P4)
G2(P5)
D1(P6)
The MicroFETt 1.6x1.6 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to switching and
linear mode applications.
Bottom
Top
Note: Center pad of P7 & P8 is a virtual
pin number. Actual P7 & P8 is connected
to edge pad of P6 & P3 respectively.
Features
Q1: N−Channel
UDFN6 1.6x1.6, 0.5P
CASE 517DW
Max R
Max R
Max R
Max R
= 66 mW at V = 4.5 V, I = 3.4 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
= 86 mW at V = 2.5 V, I = 2.9 A
GS
D
MARKING DIAGRAM
= 113 mW at V = 1.8 V, I = 2.5 A
GS
D
= 160 mW at V = 1.5 V, I = 2.1 A
GS
D
Q2: P−Channel
&Z&2&K
5T
Max R
= 142 mW at V = −4.5 V, I = −2.3 A
GS D
DS(on)
Max R
= 213 mW at V = −2.5 V, I = −1.8 A
GS D
DS(on)
Max R
= 331 mW at V = −1.8 V, I = −1.5 A
GS D
DS(on)
&Z
&2
&K
5T
= Assembly Plant Code
Max R
= 530 mW at V = −1.5 V, I = −1.2 A
GS D
DS(on)
= 2−Digit Date Code (YW)
= 2−Digit Lot Traceability Code
= Specific Device Code
Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6 Thin
Free from Halogenated Compounds and Antimony Oxides
HBM ESD Protection Level > 1600 V (Note 3)
This Device is Pb−Free and is RoHS Compliant
ORDERING INFORMATION
†
Device
FDME1034CZT
Package
Shipping
UDFN6
5,000 /
Applications
(Pb−Free)
Tape & Reel
DC−DC Conversion
Level Shifted Load Switch
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2023 − Rev. 2
FDME1034CZT/D
FDME1034CZT
MOSFET MAXIMUM RATINGS (T = 25C, Unless otherwise noted)
A
Symbol
Parameter
Q1
20
8
3.8
6
Q2
−20
8
Units
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
V
V
A
I
D
Drain Current
−Continuous
−Pulsed
TA = 25C
(Note 1a)
−2.6
−6
P
Power Dissipation for Single Operation TA = 25C
Power Dissipation for Single Operation TA = 25C
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
1.4
0.6
W
D
T , T
−55 to +150
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
90
Units
R
Thermal Resistance, Junction to Ambient (Single Operation) (Note 1a)
Thermal Resistance, Junction to Ambient (Single Operation) (Note 1b)
C/W
JA
JA
R
195
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
OFF CHARACTERISTICS
BV
Drain to Source Breakdown
Voltage
I
I
= 250 mA, V = 0 V
Q1
Q2
20
−
−
−
−
V
mV/C
mA
DSS
D
D
GS
−20
= −250 mA, V = 0 V
GS
DBV
DT
Breakdown Voltage
Temperature Coefficient
I
D
I
D
= 250 mA, referenced to 25C
= −250 mA, referenced to 25C
Q1
Q2
−
−
16
−12
−
−
DSS
J
I
Zero Gate Voltage Drain
Current
V
V
= 16 V, V = 0 V
Q1
Q2
−
−
−
−
1
−1
DSS
DS
DS
GS
= −16 V, V = 0 V
GS
I
Gate to Source Leakage
Current
V
GS
= 8 V, V = 0 V
All
−
−
10
mA
GSS
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold
Voltage
V
GS
V
GS
= V , I = 250 mA
Q1
Q2
0.4
−0.4
0.7
−0.6
1.0
−1.0
V
DS
D
= V , I = −250 mA
DS
D
DV
Gate to Source Threshold
Voltage Temperature
Coefficient
I
D
I
D
= 250 mA, referenced to 25C
= −250 mA, referenced to 25C
Q1
Q2
−
−
−3
2
−
−
mV/C
GS(th)
J
DT
R
Drain to Source On Resistance
V
V
V
V
V
= 4.5 V, I = 3.4 A
Q1
Q2
−
−
−
−
−
55
68
66
86
113
160
112
mW
DS(on)
GS
GS
GS
GS
GS
D
= 2.5 V, I = 2.9 A
D
= 1.8 V, I = 2.5 A
85
D
= 1.5 V, I = 2.1 A
106
76
D
= 4.5 V, I = 3.4 A, T = 125C
D
J
V
GS
V
GS
V
GS
V
GS
V
GS
= −4.5 V, I = −2.3 A
−
−
−
−
−
95
142
213
331
530
190
D
= −2.5 V, I = −1.8 A
120
150
190
128
D
= −1.8 V, I = −1.5 A
D
= −1.5 V, I = −1.2 A
D
= −4.5 V, I = −2.3 A , T = 125C
D
J
g
FS
Forward Transconductance
V
DS
V
DS
= 4.5 V, I = 3.4 A
Q1
Q2
−
−
9
7
−
−
S
D
= −4.5 V, I = −2.3 A
D
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2
FDME1034CZT
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1:
DS
Q1
Q2
−
−
225
305
300
405
pF
pF
pF
iss
V
= 10 V, V = 0 V, f = 1 MHz
GS
C
Output Capacitance
Q1
Q2
−
−
40
55
55
75
oss
Q2:
V
DS
= −10 V, V = 0 V, f = 1 MHz
GS
C
Reverse Transfer Capacitance
Q1
Q2
−
−
25
50
40
75
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Q1:
DD
Q1
Q2
−
−
4.5
4.7
10
10
ns
d(on)
V
= 10 V, I = 1 A, V = 4.5V, R
= 6 W
D
GS
GEN
t
Rise Time
Q1
Q2
−
−
2.0
4.8
10
10
r
Q2:
DD
V
= −10 V, I = −1 A, V = −4.5 V,
D GS
R
= 6 W
GEN
t
Turn−Off Delay Time
Fall Time
Q1
Q2
−
−
15
33
27
53
d(off)
t
Q1
Q2
−
−
1.7
16
10
29
f
Q
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q1:
DD
Q1
Q2
−
−
3
4.2
7.7
nC
g
V
= 10 V, I = 3.4 A, V = 4.5 V
5.5
D
GS
Q
Q1
Q2
−
−
0.4
0.6
−
−
gs
gd
Q2:
V
DD
= −10 V, I = −2.3 A, V = −4.5 V
D GS
Q
Q1
Q2
−
−
0.6
1.4
−
−
DRAIN−SOURCE DIODE CHARACTERISTICS T = 25C unless otherwise noted.
J
V
SD
Source to Drain Diode Forward
Voltage
V
GS
V
GS
= 0 V, I = 0.9 A
(Note 2)
(Note 2)
Q1
Q2
−
−
0.7
−0.8
1.2
−1.2
V
S
= 0 V, I = −0.9 A
S
t
Reverse Recovery Time
Q1:
F
Q1
Q2
−
−
8.5
16
17
29
ns
nC
rr
I = 3.4 A, Di/Dt = 100 A/ms
Q
Reverse Recovery Charge
Q1
Q2
−
−
1.4
4.4
10
10
Q2:
rr
I = −2.3 A, Di/Dt = 100 A/ms
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
JA
by design while R
is determined by the user’s board design.
CA
b. 195 C/W when mounted on
a minimum pad of 2 oz copper
a. 90 C/W when mounted on
a 1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
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3
FDME1034CZT
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) T = 25C UNLESS OTHERWISE NOTED.
J
6
4
2
0
3.0
V
V
V
GS = 4.5 V
GS = 3 V
GS = 2.5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.5
VGS = 1.8 V
V
GS = 1.5 V
VGS = 1.8 V
VGS = 2.5 V
VGS = 1.5 V
V
GS = 3 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
0.0
0.5
1.0
1.5
0
2
4
6
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.6
300
250
200
150
100
50
ID = 3.4 A
GS = 4.5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
V
1.4
1.2
1.0
0.8
0.6
ID = 3.4 A
TJ = 125 o
C
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs. Junction
Temperature
Figure 4. On−Resistance vs. Gate to
Source Voltage
6
10
1
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
TJ = 150 o
C
4
T
J = 25 oC
0.1
TJ = 150 o
C
2
T
J = 25 o
C
TJ = −55oC
0.01
TJ = −55oC
0
0.001
0.0
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDME1034CZT
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) T = 25C UNLESS OTHERWISE NOTED.
J
4.5
3.0
1.5
0.0
500
ID = 3.4 A
Ciss
V
DD = 8 V
100
VDD = 10 V
VDD = 12 V
Coss
Crss
10
f = 1 MHz
GS = 0 V
V
1
0
1
2
3
0.1
1
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
10−1
10
1
100 ms
10−2
VGS = 0 V
10−3
10−4
1 ms
10 ms
TJ = 125oC
10−5
THIS AREA IS
LIMITED BY R
DS(on)
100 ms
10−6
10−7
SINGLE PULSE
TJ = MAX RATED
0.1
1 s
10 s
DC
R
qJA = 195oC/W
10−8
10−9
TJ = 25 o
C
T
A = 25oC
0.01
0.1
1
10
50
0
3
6
9
12
15
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
Figure 10. Gate Leakage Current vs.
Gate to Source Voltage
100
SINGLE PULSE
qJA = 195 oC/W
R
T
A = 25 o
C
10
1
0.5
10−4
10−3
10−2
10−1
11
0
100
1000
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDME1034CZT
TYPICAL CHARACTERISTICS (Q1 N−CHANNEL) T = 25C UNLESS OTHERWISE NOTED.
J
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
P
DM
0.02
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
qJA = 195 oC/W
PEAK T = P x Z
x R
+ T
qJA A
0.01
J
DM
qJA
R
0.005
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (sec)
11
0
100
1000
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
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6
FDME1034CZT
TYPICAL CHARACTERISTICS (Q2 P−CHANNEL) T = 25C UNLESS OTHERWISE NOTED.
J
6
4
2
0
3
VGS = -4.5 V
V
GS = -2.5 V
VGS = -3 V
VGS = −1.5 V
2
1
0
VGS = −1.8 V
GS = −2.5 V
VGS = −1.8 V
V
GS = -3 V
V
VGS = -4.5 V
VGS = −1.5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
0
2
4
6
−VDS, DRAIN TO SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 13. On-Region Characteristics
Figure 14. Normalized On−Resistance
vs. Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
500
400
300
200
100
0
ID
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
GS = −4.5 V
ID = −2.3 A
TJ = 125 o
C
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TJ, JUNCTION TEMPERATURE (oC)
−VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Normalized On−Resistance
Figure 16. On Resistance
vs. Gate to Source Voltage
vs. Junction Temperature
6
4
2
0
10
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = −5 V
1
0.1
TJ = 150oC
T
J = 25 o
C
TJ = 150oC
T
J = 25 o
C
0.01
TJ = −55oC
TJ = −55oC
0.001
0.0
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−VGS, GATE TO SOURCE VOLTAGE (V)
−VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 17. Transfer Characteristics
Figure 18. Source to Drain Diode Forward Voltage
vs. Source Current
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FDME1034CZT
TYPICAL CHARACTERISTICS (Q2 N−CHANNEL) T = 25C UNLESS OTHERWISE NOTED.
J
1000
4.5
3.0
1.5
0.0
ID = −2.3 A
Ciss
V
DD = −8 V
100
10
VDD = −10 V
Coss
VDD = −12 V
Crss
f = 1 MHz
GS = 0 V
V
0.1
1
10
20
0
2
4
6
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 19. Gate Charge Characteristics
Figure 20. Capacitance vs. Drain to Source
Voltage
10−1
10
1
100 us
1 ms
10−2
10−3
10−4
10−5
10−6
10−7
10−8
10−9
VDS = 0 V
10 ms
TJ = 125 oC
THIS AREA IS
LIMITED BY R
DS(on)
100 ms
0.1
0.01
SINGLE PULSE
TJ = MAX RATED
1 s
10 s
DC
qJA = 195oC/W
TJ = 25 o
C
R
A = 25oC
T
0.1
1
10
60
0
3
6
9
12
15
−VDS, DRAIN to SOURCE VOLTAGE (V)
−VGS, GATE TO SOURCE VOLTAGE (V)
Figure 21. Forward Bias Safe Operating Area
Figure 22. Gate Leakage Current
vs. Gate to Source Voltage
1000
100
10
SINGLE PULSE
qJA = 195 oC/W
R
= 25 o
C
TA
1
0.3
10−4
10−3
10−2
10−1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 23. Single Pulse Maximum Power Dissipation
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FDME1034CZT
TYPICAL CHARACTERISTICS (Q2 P−CHANNEL) T = 25C UNLESS OTHERWISE NOTED.
J
2
DUTY CYCLE−DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
qJA = 195 oC/W
1
2
PEAK T = P x Z
x R
+ T
qJA A
J
DM
qJA
R
0.001
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
11
0
100
1000
Figure 24. Junction −to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark and MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517DW
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13701G
UDFN6 1.6x1.6, 0.5P
PAGE 1 OF 1
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