FDMQ8403 [ONSEMI]
N 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器，100V，6A，110mΩ;
| 型号： | FDMQ8403 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，GreenBridge™ 系列高效桥式整流器，100V，6A，110mΩ |
| 文件： | 总7页 (文件大小：338K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH),
GreenBridget Series of
High-Efficiency Bridge
Rectifiers
V
R
MAX
I MAX
D
DSS
DS(ON)
100 V
110 W @ 10 V
6 A
Pin 1
G4
D1/D4
D3/S4
G3
G1
D1/D4
S1/D2
G2
S2
S3
S3
S2
100 V, 6 A, 110 mW
WDFN12 5 x 4.5, 0.8P
(MLP 4.5 x 5)
FDMQ8403
CASE 511CR
General Description
This quad MOSFET solution provides ten−fold improvement
in power dissipation over diode bridge.
MARKING DIAGRAM
$Y&Z&2&K
FDMQ
Features
• Max r
• Max r
= 110 mW at V = 10 V, I = 3 A
GS D
DS(on)
DS(on)
8403
= 175 mW at V = 6 V, I = 2.4 A
GS
D
• Substantial Efficiency Benefit in PD Solutions
FDMQ8403 = Specific Device Code
• This Device is Pb−Free, Halid Free and is RoHS Compliant
$Y
&Z
&2
&K
= onsemi Logo
= Assembly plant code
= Date Code format (Year and Week)
= Lot Run Traceability Code
Applications
• High−Efficiency Bridge Rectifiers
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
PIN CONNECTION
Symbol
Rating
Drain to Source Voltage
Value
100
20
Unit
V
V
DS
V
GS
6
5
4
3
2
1
S2
S2
7
8
S3
S3
G3
Q3 Q2
Gate to Source Voltage
V
I
D
Drain Current
A
− Continuous (Package Limited)
− Continuous (Silicon Limited)
− Continuous (Note 1a.)
− Pulsed
T
T
A
= 25°C
= 25°C
6
9
3.1
12
C
C
9
G2
T = 25°C
D3/S4
D1/D4
10
11
S1/D2
D1/D4
G1
Q1
Q4
P
D
Power Dissipation
T
= 25°C
C
17
W
Power Dissipation (Note 1a.)
T = 25°C
1.9
A
G4 12
T , T
Operating and Storage Junction Temperature −55 to
Range +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on
page 5 of this data sheet.
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
R
Thermal Resistance, Junction to Ambient
(Note 1a.)
65
°C/W
q
JA
R
Thermal Resistance, Junction to Ambient
(Note 1b.)
135
q
JA
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2022 − Rev. 3
FDMQ8403/D
FDMQ8403
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
100
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
72
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 0 V, V = 80 V
−
−
−
−
1
nA
DSS
GSS
GS
DS
I
=
20 V, V = 0 V
100
mA
GS
DS
OFF CHARACTERISTICS
V
Drain to Source Breakdown Voltage
V
I
= V , I = 250 mA
2
2.8
4
V
GS(th)
GS
DS
D
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
−8
−
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 3 A
−
−
−
−
85
115
147
6
110
175
191
−
mW
DS(on)
D
= 6 V, I = 2.4 A
D
= 10 V, I = 3 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 10 V, I = 3 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
−
−
−
162
43
215
60
5
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
2.6
rss
DYNAMIC CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
V
= 50 V, I = 3 A,
−
−
−
−
−
−
−
−
4.1
1.2
7.2
1.8
3
10
10
15
10
5
ns
ns
d(on)
DD
D
= 10 V, R
= 6 W
GS
GEN
t
r
t
Turn−Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to 10 V
= 0 V to 5 V
= 50 V,
V = 50 V,
DD
nC
nC
nC
nC
g
g
I
D
= 3 A
1.7
0.9
0.8
3
Q
−
gs
gd
I
D
= 3 A
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 3 A (Note 2)
−
−
−
0.86
33
1.3
53
37
V
SD
GS
S
t
I = 3 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
23
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
2
b. 135°C/W when mounted on a minimum
pad of 2 oz copper, the board designed
Q1 + Q3 or Q2 + Q4.
a. 65°C/W when mounted on a 1 in
pad of 2 oz copper, the board
designed Q1 + Q3 or Q2 + Q4.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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2
FDMQ8403
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted.
J
5
12
9
V
GS
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
V
GS
= 5 V
V
= 8 V
V
GS
= 6 V
V
= 7 V
GS
4
V
GS
= 6 V
3
2
6
3
0
V
= 5 V
V
= 7 V
GS
GS
1
0
V
= 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
V
GS
= 8 V
0
3
6
9
12
0
1
2
3
4
5
I , DRAIN CURRENT (A)
D
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized On−Resistance vs. Drain
Figure 1. On Region Characteristics
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
400
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 3 A
D
I
D
= 3 A
= 10 V
GS
300
200
100
0
T = 125°C
J
1.0
0.8
0.6
T = 25°C
J
−75 −50 −25
0
25
50
75
100 125 150
4
5
6
8
9
10
7
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate
to Source Voltage
20
10
12
9
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
T = 150°C
J
V
DS
= 5 V
1
0.1
T = 150°C
J
T = 25°C
J
6
T = 25°C
J
3
0.01
0.001
T = −55°C
J
T = −55°C
J
0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
FDMQ8403
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
1000
10
8
I
D
= 3 A
V
DD
= 50 V
V
DD
= 25 V
C
iss
100
10
V
DD
= 75 V
6
C
oss
4
2
f = 1 MHz
V
GS
= 0 V
C
rss
1
0.1
0
1
10
100
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
20
10
500
100 ms
100
10
1
1 ms
10 ms
THIS AREA IS
LIMITED BY r
100 ms
1 s
DS(on)
0.1
SINGLE PULSE
T = MAX RATED
J
SINGLE PULSE
= 135°C/W
T = 25°C
A
1
R
= 135°C/W
q
10 s
DC
JA
R
q
JA
T = 25°C
A
0.01
0.005
0.5
10
−4
−3
−2
−1
1000
100
0.1
1
10
100
300
10
10
10
1
10
t, PULSE WIDTH (s)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
Figure 10. Single Pulse Maximum Power
Dissipation
2
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
R
= 135°C/W
q
JA
PEAK T = P
× Z
× R + T
q
JA JA A
q
J
DM
0.001
−4
−3
−2
−1
1
100
10
10
10
10
10
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Junction−to−Ambient Transient Thermal Response Curve
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4
FDMQ8403
ORDERING INFORMATION
†
Device Marking
Device
FDMQ8403
Package
Reel Size
Tape Width
Shipping
3000 / Tape & Reel
FDMQ8403
WDFN12
(Pb−Free)
13"
12 mm
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
GreenBridge is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN12 5x4.5, 0.8P
CASE 511CR
ISSUE A
DATE 21 MAR 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13606G
WDFN12 5X4.5, 0.8P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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