FDMS10C4D2N_技术文档

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

September 2016

FDMS10C4D2N

N-Channel Shielded Gate PowerTrench^®MOSFET

100 V, 124 A, 4.2 mΩ

Features

General Description

Shielded Gate MOSFET Technology

This N-Channel MV MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench^®process that

incorporates Shielded Gate technology. This process has been

optimized to minimise on-state resistance and yet maintain

superior switching performance with best in class soft body

diode.

Max r_DS(on)= 4.2 mΩ at V_GS= 10 V, I_D= 44 A

Max r_DS(on)= 14 mΩ at V_GS= 6 V, I_D= 22 A

ADD

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

MSL1 robust package design

100% UIL tested

Applications

Industrial Motor Drive

Industrial Power Supply

Industrial Automation

Battery Operated Tools

Battery Protection

Solar Inverters

RoHS Compliant

UPS and Energy Inverters

Energy Storage

Load Switch

Bottom

Top

Pin 1

S

D

S

G

S

G

Pin 1

D

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Continuous

V

±20

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

(Note 5)

(Note 1a)

(Note 4)

(Note 3)

124

78

I_D

A

-Continuous

17

-Pulsed

510

E_AS

Single Pulse Avalanche Energy

Power Dissipation

337

mJ

W

T_C= 25 °C

T_A= 25 °C

125

P_D

(Note 1a)

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.0

50

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS10C4D2N

Power 56

3000 units

FDMS10C4D2N Rev. 1.0

1

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA, V_GS= 0 V

100

V

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

I

_D= 250 μA, referenced to 25 °C

60

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 80 V, V_GS= 0 V

V_GS= ±20 V, V_DS= 0 V

1

μA

100

nA

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

2.0

3.1

-9

4.0

V

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

I

_D= 250 μA, referenced to 25 °C

mV/°C

V

_GS= 10 V, I_D= 44 A

3.3

5.3

5.7

116

4.2

14

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 6 V, I_D= 22 A

mΩ

V_GS= 10 V, I_D= 44 A, T_J= 125 °C

V_DS= 10 V, I_D= 44 A

9.0

S

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

2945

1730

20

4500

2600

50

pF

Ω

V_DS= 50 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.1

1.3

2.6

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

17

9

31

18

40

12

65

43

ns

V_DD= 50 V, I_D= 44 A,

V

_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

25

6

ns

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 6 V

42

27

13

9.3

nC

Q_g

V_DD= 50 V,

_D= 44 A

I

Q_gs

Q_gd

Drain-Source Diode Characteristics

V

_GS= 0 V, I_S= 2.1 A

(Note 2)

0.7

0.8

32

1.2

1.3

52

V_SD

Source to Drain Diode Forward Voltage

V

V_GS= 0 V, I_S= 44 A

t_rr

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Time

Reverse Recovery Charge

ns

nC

ns

I_F= 20 A, di/dt = 300 A/μs

I_F= 20 A, di/dt = 1000 A/μs

Q_rr

t_rr

57

92

25

40

Q_rr

158

253

nC

Notes:

2

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is determined by the user's board design.

θJA

θCA

a)

50 °C/W when mounted on a

1 in pad of 2 oz copper

b) 125 °C/W when mounted on a

minimum pad of 2 oz copper.

2

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E of 337 mJ is based on starting T = 25 °C; N-ch: L = 3 mH, I = 15 A, V = 100 V, V =10 V. 100% test at L = 0.1 mH, I = 49 A.

AS

J

AS

DD

GS

AS

4. Pulsed Id please refer to Fig 11 SOA graph for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

FDMS10C4D2N Rev. 1.0

2

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

300

6

4

2

0

V_GS= 10 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 5 V

250

200

150

100

50

V_GS= 8 V

V_GS= 6.5 V

V_GS= 6 V

V_GS= 6.5 V

V_GS= 6 V

V_GS= 8 V

V_GS= 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 10 V

100

0

1

2

3

4

0

50

150

200

250

300

V_DS, DRAIN TO SOURCE VOLTAGE (V)

I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

2.0

30

PULSE DURATION = 80 μs

I_D= 44 A

DUTY CYCLE = 0.5% MAX

V_GS= 10 V

1.8

1.6

1.4

1.2

1.0

0.8

0.6

25

20

15

10

5

I_D= 44 A

T_J= 125 ^o

C

T_J= 25 ^o

C

0

-75 -50 -25

0

25 50 75 100 125 150

4

5

6

7

8

9

10

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

300

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 0 V

100

250

200

150

100

50

V_DS= 5 V

10

1

T_J= 150 ^o

C

T_J= 25 ^o

C

0.1

T_J= 150 ^o

C

T_J= 25 ^o

C

0.01

0.001

T_J= -55 ^o

C

T_J= -55 ^o

C

0

2

4

6

8

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDMS10C4D2N Rev. 1.0

3

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

10

10000

1000

100

10

I_D= 44 A

C_iss

V_DD= 50 V

8

C_oss

V_DD= 25 V

6

V_DD= 75 V

4

C_rss

f = 1 MHz

_GS= 0 V

2

0

V

1

0.1

0

10

20

30

40

50

1

10

100

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

100

10

1

140

120

100

80

R_θJC= 1.0 ^oC/W

V_GS= 10 V

T_J= 25 ^o

C

T_J= 100 ^o

C

60

V_GS= 6 V

40

T_J= 125 ^o

C

20

0

25

0.01

0.1

t

1

10

100

50

75

100

125

150

T_C, CASE TEMPERATURE (^oC)

_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

1000

100

10

20000

SINGLE PULSE

R_θJC= 1.0 ^oC/W

_C= 25 ^oC

10000

1000

100

T

10 μs

THIS AREA IS

LIMITED BY r_DS(on)

100 μs

SINGLE PULSE

T_J= MAX RATED

1 ms

1

R_θJC= 1.0 ^oC/W

10 ms

DC

CURVE BENT TO

MEASURED DATA

T

_C= 25 ^oC

0.1

10

10^-5

10^-4

10^-3

t, PULSE WIDTH (sec)

10^-2

10^-1

1

10

100

500

1

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure 12. Single Pulse Maximum

Power Dissipation

FDMS10C4D2N Rev. 1.0

4

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

0.2

0.1

P

DM

0.05

0.02

0.01

0.1

t

1

t

2

0.01

0.001

NOTES:

(t) = r(t) x R

Z

θJC

SINGLE PULSE

o

R

= 1.0 C/W

θJC

Peak T = P

x Z (t) + T

J

DM

θJC C

Duty Cycle, D = t / t

1

2

10^-5

10^-4

10^-3

t, RECTANGULAR PULSE DURATION (sec)

10^-2

10^-1

1

Figure 13. Junction-to-Case Transient Thermal Response Curve

FDMS10C4D2N Rev. 1.0

5

www.fairchildsemi.com

PQFN8 5X6, 1.27P

CASE 483AE

ISSUE A

5.10

3.91

5.10

PKG

A

SEE

DETAIL B

1.27

6.61

C

L

B

8

7

6

5

8

5

0.77

4.52

3.75

5.85

5.65

C

PKG

6.15

L

KEEP OUT

AREA

1.27

1

4

1

2

3

4

TOP VIEW

0.61

1.27

3.81

LAND PATTERN

RECOMMENDATION

OPTIONAL DRAFT

ANGLE MAY APPEAR

ON FOUR SIDES

SEE

DETAIL C

5.00

4.80

OF THE PACKAGE

0.35

0.15

ꢀꢁꢂꢃ

0.10 C

0.30

0.05

0.00

SIDE VIEW

ꢀꢁꢂꢃ

8X

0.08 C

C

0.35

0.15

5.20

4.80

1.10

0.90

SEATING

PLANE

DETAIL C

DETAIL B

SCALE: 2:1

3.81

SCALE: 2:1

1.27

0.51

(8X)

0.31

NOTES: UNLESS OTHERWISE SPECIFIED

(0.34)

A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,

ISSUE A, VAR. AA,.

0.10

C A B

1

2

3

4

B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.

MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.

C. ALL DIMENSIONS ARE IN MILLIMETERS.

0.76

0.51

(0.52)

D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.

E. IT IS RECOMMENDED TO HAVE NO TRACES OR

VIAS WITHIN THE KEEP OUT AREA.

6.25

5.90

+0.30

3.48

-0.10

(0.50)

(0.30)

(2X)

8

7

6

5

ꢀꢄꢅꢅꢀꢄꢂꢀ

+0.10

-0.15

0.20

(8X)

3.96

3.61

BOTTOM VIEW

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

www.onsemi.com

1


型号：	FDMS10C4D2N
厂家：	ONSEMI
描述：	N 沟道屏蔽门极 PowerTrench® MOSFET 100V，124A，4.2mΩ
文件：	总8页 (文件大小：410K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDMS10C4D2N [ONSEMI]

相关型号：

FDMS1D2N03DSD

FDMS1D4N03S

FDMS1D5N03

FDMS2380

FDMS2502SDC

FDMS2504SDC

FDMS2506SDC

FDMS2508SDC

FDMS2572

FDMS2572

FDMS2572_07

FDMS2672