FDMS2734 [ONSEMI]
N 沟道，UltraFET Trench® MOSFET，250V，14A，122mΩ;
| 型号： | FDMS2734 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，UltraFET Trench® MOSFET，250V，14A，122mΩ |
| 文件： | 总7页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – N-Channel,
UltraFET Trench
V
R
MAX
I MAX
D
DS
DS(on)
250 V
122 mW @ 10 V
130 mW @ 6 V
14 A
250 V, 14 A, 122 mW
Pin 1
S S S G
FDMS2734
General Description
UItraFET devices combine characteristics that enable benchmark
efficiency in power conversion applications. Optimized for R
,
DS(on)
low ESR, low total and Miller gate charge, these devices are ideal for
high frequency DC to DC converters.
D D D D
Bottom View
Features
WDFN8 5y6, 1.27P
• Max R
• Max R
• Low Miller Charge
• Optimized Efficiency at High Frequencies
• Pb−Free, Halide Free and RoHS Compliant
= 122 mW at V = 10 V, I = 2.8 A
GS D
DS(on)
(Power 56)
= 130 mW at V = 6 V, I = 1.7 A
DS(on)
GS
D
CASE 506DP
ELECTRICAL CONNECTION
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
Applications
• DC − DC Conversion
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Value
250
20
Unit
V
V
DS
GS
V
Gate to Source Voltage
V
N-CHANNEL MOSFET
MARKING DIAGRAM
I
D
Drain Current:
A
− Continuous (Silicon limited)
T
= 25°C
14
2.8
30
C
− Continuous T = 25°C (Note 1a)
− Pulsed
A
P
D
Power Dissipation:
W
T
= 25°C
78
2.5
C
&Z&2&K
FDM
T = 25°C (Note 1a)
A
S2734
T , T
Operating and Storage Junction
Temperature Range
−55 to
+150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
&Z
&2
= Assembly Plant Code
= 2−Digit Date Code
(Year and Week)
&K
= 2−Digit Lot Run Code
THERMAL CHARACTERISTICS
FDMS2734 = Specific Device Code
Symbol
Parameter
Value
1.6
Unit
Thermal Resistance, Junction to Case
°C/W
R
q
JC
ORDERING INFORMATION
R
Thermal Resistance, Junction to Ambient
(Note 1a)
50
q
JA
†
Device
Package
Shipping
FDMS2734
WDFN8 5y6, 1.27P
3000 /
Tape & Reel
(Power 56)
(Pb−Free, Halide Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
May, 2023 − Rev. 3
FDMS2734/D
FDMS2734
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
= 250 mA, V = 0 V
250
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
I = 250 mA, Referenced to 25_C
D
−
250
mV/_C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 200 V
−
−
−
−
1
mA
DSS
GSS
DS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 250 mA
2
3
4
V
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
I = 250 mA, Referenced to 25_C
D
−
−11
−
mV/_C
DVGS(th)
DTJ
R
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 2.8 A
−
−
−
−
105
110
217
11
122
130
258
−
mW
DS(on)
D
= 6 V, I = 1.7 A
D
= 10 V, I = 2.8 A, T = 125°C
D
J
g
FS
= 10 V, I = 2.8 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 100 V, V = 0 V, f = 1 MHz
−
−
−
−
1775
80
2365
110
40
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
25
rss
R
f = 1 MHz
0.9
−
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 125 V, I = 2.8 A, V = 10 V,
GEN
−
−
−
−
−
22
10
36
12
30
36
20
58
22
42
ns
ns
ns
ns
nC
d(on)
DD
R
D
GS
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
Q
Total Gate Charge at 10 V
V
= 0 V to 10 V, V = 125 V,
= 2.8 A
g(TOT)
GS DD
I
D
Q
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
V
DD
= 125 V, I = 2.8 A
−
−
7
9
−
−
nC
nC
gs
D
= 125 V, I = 2.8 A
gd
D
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 2.8 A (Note 2)
−
−
−
0.75
79
1.20
119
321
V
SD
GS
S
t
I = 2.8 A, di/dt = 100 A/ms
F
ns
nC
rr
Q
Reverse Recovery Charge
214
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a) 50°C/W when mounted on
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
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2
FDMS2734
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
2.2
2.0
30
25
20
15
10
5
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
= 6 V
GS
V
GS
= 4.5 V
V
GS
= 10 V
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= 5 V
V
= 5 V
GS
V
GS
= 6 V
V
= 4.5 V
GS
V
GS
= 10 V
0
0
5
10
15
20
25
30
0
1
2
3
4
5
I , Drain Current (A)
D
V
DS
, Drain to Source Voltage (V)
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
Figure 1. On Region Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
400
320
240
160
80
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
D
= 7 A
I
V
= 2.8 A
D
= 10 V
GS
T = 150°C
J
T = 25°C
J
−75 −50 −25
0
25
50
75 100 125 150
4
6
8
10
V
, Gate to Source Voltage (V)
T , Junction Temperature (5C)
GS
J
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to
Source Voltage
16
12
8
20
10
V
GS
= 0 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
1
0.1
T = 150°C
J
T = 150°C
J
T = 25°C
J
T = 25°C
J
4
0.01
0.001
T = −55°C
J
T = −55°C
J
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
2
4
5
6
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
FDMS2734
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
3000
1000
C
iss
V
DD
= 75 V
6
V
DD
= 125 V
C
oss
rss
V
= 175 V
DD
100
10
4
2
C
f = 1 MHz
= 0 V
V
GS
0
0
8
16
Q , Gate Charge (nC)
24
32
0.1
1
10
100
V
, Drain to Source Voltage (V)
DS
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
4
3
15
12
9
R
= 1.6°C/W
q
JC
V
GS
= 10 V
V
GS
= 6 V
2
T = 125°C
J
6
T = 25°C
J
3
1
0.01
0
25
0.5
0.1
, Time in Avalanche (ms)
50
75
100
125
150
t
T , Case Temperature (5C)
AV
C
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
40
3000
1000
For Temperatures above 25°C
Derate Peak Current
10
as Follows:
V
GS
= 10 V
1 ms
150 * TA
100
10
1
Ǹ
1
I + I25 ƪ ƫ
125
10 ms
This Area is
100 ms
1 s
T = 25°C
A
0.1
Limited by R
DS(on)
Single pulse
Single Pulse
0.01
0.001
10 s
DC
T = Max Rated
J
q
R
= 125°C/W
JA
T = 25°C
A
0.1
10
−3
−2
−1
0
1
2
3
0.1
1
10
100
1000
10
10
10
10
10
10
t, Pulse Width (s)
V
DS
, Drain to Source Voltage (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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4
FDMS2734
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
NOTES:
Duty Factor: D = t /t
SINGLE PULSE
0.001
0.0001
1
2
Peak T = P
× Z (t) × R + T
q
q
JA
J
DM
JA
A
−3
−2
−1
0
2
3
1
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 13. Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 5x6, 1.27P
CASE 506DP
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13598G
WDFN8 5X6, 1.27P
PAGE 1 OF 1
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