FDMS2D4N03S [ONSEMI]
N 沟道 PowerTrench® SyncFETTM;
| 型号： | FDMS2D4N03S |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® SyncFETTM |
| 文件： | 总8页 (文件大小：1060K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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FDMS2D4N03S
N-Channel PowerTrench® SyncFETTM
30 V, 163 A, 1.8 mΩ
Features
General Description
The FDMS2D4N03S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic schottky
body diode.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
High Performance Technology for Extremely Low rDS(on)
SyncFETTM Schottky Body Diode
100% UIL Tested
Applications
RoHS Compliant
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification
D
D
D
D
D
D
G
D
5
6
7
8
4
3
2
1
S
S
S
G
S
S
S
Pin 1
D
Top
Bottom
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±16
TC = 25 °C
C = 100 °C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
163
T
103
ID
A
-Continuous
TA = 25 °C
28
-Pulsed
694
EAS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
175
mJ
W
TC = 25 °C
TA = 25 °C
74
PD
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.7
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS2D4N03S
FDMS2D4N03S
Power 56
3000 units
Semiconductor Components Industries, LLC, 2017
Jul, 2017, Rev. 1.1
Publication Order Number:
FDMS2D4N03S
1
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
D = 10 mA, referenced to 25 °C
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
18
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 24 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
500
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
1.0
1.6
-4
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 10 mA, referenced to 25 °C
GS = 10 V, ID = 28 A
mV/°C
V
1.4
1.7
2.0
200
1.8
2.34
2.8
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 26 A
mΩ
VGS = 10 V, ID = 28 A, TJ = 125 °C
VDS = 5 V, ID = 28 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
4670
1395
63
6540
1955
120
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.1
0.5
1.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
15
4
28
10
61
10
88
40
ns
ns
VDD = 15 V, ID = 28 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
38
3
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
63
28
9.8
4.9
nC
nC
nC
nC
Qg
VDD = 15 V,
D = 28 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2.1 A
(Note 2)
(Note 2)
0.65
0.78
37
1.2
1.3
59
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 28 A
trr
Reverse Recovery Time
ns
IF = 28 A, di/dt = 300 A/μs
Qrr
Reverse Recovery Charge
51
81
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is determined by the user's board design.
θCA
θJA
125 °C/W when mounted on a
minimum pad of 2 oz copper.
50 °C/W when mounted on a
1 in pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 175 mJ is based on starting T = 25 °C; N-ch: L = 3 mH, I = 10.8 A, V = 30 V, V =10 V. 100% test at L = 0.1 mH, I = 33 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
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2
Typical Characteristics TJ = 25 °C unless otherwise noted.
180
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
120
VGS = 3 V
VGS = 4.5 V
90
VGS = 3.5 V
VGS = 4 V
VGS = 3.5 V
60
VGS = 3 V
30
VGS = 10 V
VGS = 4.5 V
PULSE DURATION = 80 μs
VGS = 4 V
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
0.8
1.0
0
30
60
90
120
150
180
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.6
12
ID = 28 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
VGS = 10 V
9
6
3
0
ID = 28 A
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure4. On-Resistance vs. Gate to
Source Voltage
180
200
100
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
120
90
60
30
0
VDS = 5 V
TJ = 125 o
C
10
TJ = 125 o
C
1
TJ = 25 oC
TJ = -55 o
TJ = 25 o
C
0.1
C
TJ = -55 o
C
0.01
0.001
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs. Source Current
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3
Typical Characteristics TJ = 25 °C unless otherwise noted.
10
10000
1000
100
ID = 28 A
Ciss
8
VDD = 15 V
Coss
6
VDD = 10 V
VDD = 20 V
4
2
0
f = 1 MHz
GS = 0 V
Crss
V
10
0.1
0
14
28
42
56
70
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s . D r a i n
to Source Voltage
180
150
120
90
100
VGS = 10 V
TJ = 25 oC
10
TJ = 100 o
C
VGS = 4.5 V
60
TJ = 125 o
C
30
RθJC = 1.7 oC/W
0
25
1
0.001
0.01
0.1
1
10
100
1000
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
F i g u r e 9 . U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
1000
100
10
100000
SINGLE PULSE
RθJC = 1.7 oC/W
C = 25 oC
10 μs
10000
1000
100
T
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
10 ms
1
RθJC = 1.7 oC/W
100 ms/DC
CURVE BENT TO
MEASURED DATA
T
C = 25 oC
0.1
0.1
10
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
SINGLE PULSE
Z
θJC
θJC
o
R
= 1.7 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.001
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
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5
Typical Characteristics (continued)
TM
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
with
a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS2D4N03S.
10-2
30
25
20
15
10
TJ = 125 o
C
C
10-3
10-4
10-5
10-6
TJ = 100 o
di/dt = 241 A/μS
5
0
TJ = 25 o
C
-5
0
5
10
15
20
25
30
0
100
200
TIME (ns)
300
400
500
VDS, REVERSE VOLTAGE (V)
Figure 14. FDMS2D4N03S SyncFETTM Body
Diode Reverse Recovery Characteristic
Figure 15. SyncFETTM Body Diode Reverse
Leakage vs. Drain-Source Voltage
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6
Dimensional Outline and Pad Layout
ON Semiconductor and the ON Logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or
standards, regardless of any support or applications information provided by
ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. ON
Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall
indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is
subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com
7
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